KR100399951B1 - 칼라이미지센서제조방법 - Google Patents
칼라이미지센서제조방법 Download PDFInfo
- Publication number
- KR100399951B1 KR100399951B1 KR10-1998-0061126A KR19980061126A KR100399951B1 KR 100399951 B1 KR100399951 B1 KR 100399951B1 KR 19980061126 A KR19980061126 A KR 19980061126A KR 100399951 B1 KR100399951 B1 KR 100399951B1
- Authority
- KR
- South Korea
- Prior art keywords
- photodiode
- image sensor
- light
- color
- region
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 abstract description 8
- 206010034960 Photophobia Diseases 0.000 abstract description 3
- 208000013469 light sensitivity Diseases 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Abstract
Description
Claims (2)
- 제1칼라의 빛을 인가받아 광전하를 생성하는 제1포토다이오드와, 상기 제1칼라 보다 짧은 파장의 제2칼라의 빛을 인가받아 광전하를 생성하는 제2포토다이오드 및 상기 제2칼라 보다 짧은 파장의 제3칼라의 빛을 인가받아 광전하를 생성하는 제3포토다이오드를 구비하는 칼라이미지센서 제조방법에 있어서,상기 제1 내지 제3 포토다이오드에 대응되는 각 영역의 제1도전형의 반도체층 내부에 제2도전형의 제1확산영역을 형성하는 단계;상기 반도체층 상에 이온주입 마스크패턴을 형성하되, 상기 제1포토다이오드에 대응되는 영역에 제1마스크패턴을 형성하고, 상기 제2포토다이오드에 대응되는 영역에 상기 제1마스크패턴보다 오픈영역이 적은 제2마스크패턴을 형성하고, 상기 제3포토다이오드에 대응되는 영역에 상기 제2마스크패턴보다 오픈영역이 적은 제3마스크패턴을 형성하는 단계; 및제1도전형의 불순물을 이온주입하여, 상기 제1 내지 제3 포토다이오드에 대응되는 각 영역의 상기 반도체층 표면 하부에 제1도전형의 제2확산영역을 형성하는 단계를 포함하여,상기 제1 내지 제3 포토다이오드를 형성하는 것을 특징으로 하는 칼라이미지센서 제조방법.
- 제1항에 있어서,상기 제1마스크패턴은 상기 제1포토다이오드에 대응되는 영역이 오픈되어 있고, 상기 제2 및 제3 마스크패턴은 각기 상기 제2 및 제3 포토다이오드에 대응되는 영역에 다수의 아일랜드 또는 라인 패턴이 형성된 것을 특징으로 하는 칼라이미지센서 제조방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0061126A KR100399951B1 (ko) | 1998-12-30 | 1998-12-30 | 칼라이미지센서제조방법 |
US09/461,717 US6359323B1 (en) | 1998-12-30 | 1999-12-16 | Color image sensor and method for fabricating the same |
TW088122562A TW437080B (en) | 1998-12-30 | 1999-12-21 | Color image sensor and method for fabricating the same |
JP37414699A JP3899432B2 (ja) | 1998-12-30 | 1999-12-28 | カラーイメージセンサ及びその製造方法 |
US10/091,409 US6632702B2 (en) | 1998-12-30 | 2002-03-07 | Color image sensor and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0061126A KR100399951B1 (ko) | 1998-12-30 | 1998-12-30 | 칼라이미지센서제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000044627A KR20000044627A (ko) | 2000-07-15 |
KR100399951B1 true KR100399951B1 (ko) | 2003-12-18 |
Family
ID=19567882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1998-0061126A KR100399951B1 (ko) | 1998-12-30 | 1998-12-30 | 칼라이미지센서제조방법 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6359323B1 (ko) |
JP (1) | JP3899432B2 (ko) |
KR (1) | KR100399951B1 (ko) |
TW (1) | TW437080B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101331992B1 (ko) | 2003-10-13 | 2013-11-25 | 인프레어드 뉴코, 아이엔씨. | 실리콘 기판 및 실리콘 회로에 집적되는 고립된 게르마늄 광 검출기들을 포함하는 이미지 센서 |
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US6960817B2 (en) * | 2000-04-21 | 2005-11-01 | Canon Kabushiki Kaisha | Solid-state imaging device |
US6518085B1 (en) * | 2000-08-09 | 2003-02-11 | Taiwan Semiconductor Manufacturing Company | Method for making spectrally efficient photodiode structures for CMOS color imagers |
KR20030037871A (ko) * | 2001-11-06 | 2003-05-16 | 주식회사 하이닉스반도체 | 씨모스 이미지 센서 및 그 제조방법 |
KR100755629B1 (ko) * | 2001-11-14 | 2007-09-04 | 매그나칩 반도체 유한회사 | 포토다이오드의 제조 방법 |
KR20030052740A (ko) * | 2001-12-21 | 2003-06-27 | 주식회사 하이닉스반도체 | 각 원색에 적합한 포토다이오드를 갖는 이미지센서 |
KR100749253B1 (ko) * | 2001-12-21 | 2007-08-13 | 매그나칩 반도체 유한회사 | 청색감쇠가 개선된 이미지센서 |
US6596981B1 (en) * | 2002-01-14 | 2003-07-22 | Texas Advanced Optoelectronic Solutions, Inc. | Method and apparatus for optical detector with special discrimination |
KR20040036087A (ko) | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법 |
KR100485892B1 (ko) * | 2002-11-14 | 2005-04-29 | 매그나칩 반도체 유한회사 | 시모스 이미지센서 및 그 제조방법 |
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JP4752193B2 (ja) * | 2004-05-19 | 2011-08-17 | ソニー株式会社 | 固体撮像素子 |
JP4507769B2 (ja) * | 2004-08-31 | 2010-07-21 | ソニー株式会社 | 固体撮像素子、カメラモジュール及び電子機器モジュール |
KR100612875B1 (ko) * | 2004-11-24 | 2006-08-14 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
KR100672701B1 (ko) * | 2004-12-29 | 2007-01-22 | 동부일렉트로닉스 주식회사 | 씨모스(cmos) 이미지 센서 및 그의 제조 방법 |
KR100672994B1 (ko) * | 2005-01-28 | 2007-01-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
DE102005025937B4 (de) | 2005-02-18 | 2009-11-26 | Austriamicrosystems Ag | Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren |
KR100685892B1 (ko) * | 2005-06-07 | 2007-02-26 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7214998B2 (en) * | 2005-07-26 | 2007-05-08 | United Microelectronics Corp. | Complementary metal oxide semiconductor image sensor layout structure |
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JP2011197553A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 露光用マスク、不純物層を有する半導体装置の製造方法および固体撮像装置 |
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JP7062692B2 (ja) | 2018-02-20 | 2022-05-06 | インテリジェント クリーニング イクイップメント ホールディングス カンパニー リミテッド | 追跡装置、物体追跡システム、及び関連する使用方法 |
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JPH0472664A (ja) * | 1990-07-13 | 1992-03-06 | Sony Corp | 固体撮像素子 |
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-
1998
- 1998-12-30 KR KR10-1998-0061126A patent/KR100399951B1/ko not_active IP Right Cessation
-
1999
- 1999-12-16 US US09/461,717 patent/US6359323B1/en not_active Expired - Lifetime
- 1999-12-21 TW TW088122562A patent/TW437080B/zh not_active IP Right Cessation
- 1999-12-28 JP JP37414699A patent/JP3899432B2/ja not_active Expired - Lifetime
-
2002
- 2002-03-07 US US10/091,409 patent/US6632702B2/en not_active Expired - Lifetime
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JPH0472664A (ja) * | 1990-07-13 | 1992-03-06 | Sony Corp | 固体撮像素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101331992B1 (ko) | 2003-10-13 | 2013-11-25 | 인프레어드 뉴코, 아이엔씨. | 실리콘 기판 및 실리콘 회로에 집적되는 고립된 게르마늄 광 검출기들을 포함하는 이미지 센서 |
Also Published As
Publication number | Publication date |
---|---|
KR20000044627A (ko) | 2000-07-15 |
JP2000228513A (ja) | 2000-08-15 |
JP3899432B2 (ja) | 2007-03-28 |
US6359323B1 (en) | 2002-03-19 |
US20020096696A1 (en) | 2002-07-25 |
TW437080B (en) | 2001-05-28 |
US6632702B2 (en) | 2003-10-14 |
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