JP2009076703A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2009076703A JP2009076703A JP2007244599A JP2007244599A JP2009076703A JP 2009076703 A JP2009076703 A JP 2009076703A JP 2007244599 A JP2007244599 A JP 2007244599A JP 2007244599 A JP2007244599 A JP 2007244599A JP 2009076703 A JP2009076703 A JP 2009076703A
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- Prior art keywords
- electrode
- film
- aluminum
- semiconductor device
- surface electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 12
- 238000007772 electroless plating Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 8
- 229910000679 solder Inorganic materials 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 229910020836 Sn-Ag Inorganic materials 0.000 description 6
- 229910020988 Sn—Ag Inorganic materials 0.000 description 6
- 239000002470 thermal conductor Substances 0.000 description 6
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000009429 electrical wiring Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- LIMFPAAAIVQRRD-BCGVJQADSA-N N-[2-[(3S,4R)-3-fluoro-4-methoxypiperidin-1-yl]pyrimidin-4-yl]-8-[(2R,3S)-2-methyl-3-(methylsulfonylmethyl)azetidin-1-yl]-5-propan-2-ylisoquinolin-3-amine Chemical compound F[C@H]1CN(CC[C@H]1OC)C1=NC=CC(=N1)NC=1N=CC2=C(C=CC(=C2C=1)C(C)C)N1[C@@H]([C@H](C1)CS(=O)(=O)C)C LIMFPAAAIVQRRD-BCGVJQADSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】半導体素子1は、その表裏面にそれぞれ電極1a,1bを有し、表面電極1aとして形成されたアルミ電極膜の劣化による電気抵抗の増加や、アルミワイヤ2の剥離を阻止するために、アルミ電極膜の上にニッケル膜3が、金属保護膜として成膜されている。また、裏面電極1bは、DBC基板の電気回路パターンを構成する導体層とはんだ接合されている。ここでは、表面電極1aはIGBTモジュールのエミッタ電極であって、そこにはニッケル膜3の上にアルミワイヤ2を熱圧着あるいは超音波振動によって接合する配線構造が採用される。
【選択図】図1
Description
パワー半導体モジュール100には、セラミクス基板131の表面で所定の電気回路パターンを構成する導体層132と、その裏面で裏銅箔を構成する導体層133が形成されたセラミクス絶縁板(DBC基板)130の上に、それぞれはんだ層120を介して2枚の半導体チップ110が接合されている。また、セラミクス絶縁板130の半導体チップ110との接合面とは反対の面に、はんだ層121を介して銅ベース140が接合されている。さらに、銅ベース140には、セラミクス絶縁板130との接合面とは反対の面にサーマルコンパウンド150を介して冷却フィン160が接合されている。冷却フィン160は、サーマルコンパウンド150により銅ベース140との間で密着して、両者の熱伝導を良好にして、パワー半導体モジュール100で発生する熱を放散する機能を果たしている。
このパワー半導体モジュール200は、複数の発熱性の半導体素子210(IGBTモジュール)が、はんだ層220を介して、長方形板状の絶縁基板231の表面に形成された回路パターン232の所定位置に接合されている。図6には、複数の半導体素子210の一つだけが表示されている。
半導体チップ110を絶縁基板(図示せず)に接合するはんだ層120として、降伏強度の大きいSn−Ag系の鉛フリーはんだを用いた場合、半導体チップ110の中央部直下付近を起点に、ほぼ同心円状に亀裂が進展する。このとき、その亀裂がはんだ層120の厚さ方向に対して平行な縦割れ、または網目状となり、すずの結晶粒界を選択的に進展する。これらのことから、鉛基はんだの劣化がひずみによる塑性変形で進行するのに対して、Sn−Ag系はんだは熱劣化(組織変化)によって進行するものと考えられている。
半導体素子1は、その表裏面にそれぞれ主電極として電極1a,1bを有し、表面電極1aとして形成されたアルミ電極膜の劣化による電気抵抗の増加や、アルミワイヤ2の剥離を阻止するために、アルミ電極膜の上にニッケル膜3が、金属保護膜として成膜されている。また、裏面電極1bは上述した図5に示すように、DBC基板(セラミクス絶縁板130)の電気回路パターンを構成する導体層132に、はんだ接合されている。ここでは、表面電極1aはIGBTモジュールのエミッタ電極であって、そこにはニッケル膜3の上にアルミワイヤ2を熱圧着あるいは超音波振動によって接合する配線構造が採用される。
図2は、ジンケート法による無電解ニッケルめっき工程を説明する流れ図である。
図3(a)に示す断面図は、アルミ電極膜(表面電極1a)上に無電解めっきによるニッケル膜3が成膜された状態で、7万回のパワーサイクル試験を行った後のものである。アルミ電極膜上のニッケル膜3が金属保護膜として作用することによって、表面電極1aの劣化自体が抑制されている。
左欄には、アルミ電極膜の状態を示す。中欄には、パワーサイクル試験におけるチップ接合温度Tjを示す。ここで、「初期」とあるのは、パワーサイクル試験を実施する以前の状態をいう。右欄には、電極断面の観察結果を示す。
1a 表面電極
1b 裏面電極
2 アルミワイヤ
3 ニッケル膜
Claims (7)
- 半導体素子の表裏面にそれぞれ電極を有し、その裏面電極が絶縁基板上に構成された電気回路パターンと面接合されてなる半導体装置において、
表面電極の上面に成膜された金属保護膜と、
前記表面電極と熱圧着あるいは超音波振動によって前記金属保護膜を介して電気的に接合されたワイヤ配線と、
を備えたことを特徴とする半導体装置。 - 前記金属保護膜の厚さは、前記表面電極の膜厚以下に成膜されていることを特徴とする請求項1記載の半導体装置。
- 前記金属保護膜は、ニッケル(Ni)組成物からなるニッケルめっき膜であることを特徴とする請求項1記載の半導体装置。
- 前記ニッケルめっき膜は、無電解めっき法によって5マイクロメートル(μm)以下の厚さに成膜されていることを特徴とする請求項3記載の半導体装置。
- 前記表面電極は、アルミニウム(Al)層であることを特徴とする請求項1記載の半導体装置。
- 前記ワイヤ配線は、アルミニウム(Al)ワイヤであることを特徴とする請求項1記載の半導体装置。
- 前記表面電極は、縦型半導体素子のそれぞれエミッタ電極あるいはコレクタ電極として、複数個構成されていることを特徴とする請求項1記載の半導体装置。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102012208246A1 (de) | 2011-05-31 | 2012-12-06 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
JP2014187264A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体装置 |
WO2014175343A1 (ja) * | 2013-04-25 | 2014-10-30 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2014181688A1 (ja) * | 2013-05-10 | 2014-11-13 | 富士電機株式会社 | 半導体装置 |
JP2015109334A (ja) * | 2013-12-04 | 2015-06-11 | 株式会社デンソー | 半導体装置 |
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DE102016212506A1 (de) | 2015-08-18 | 2017-02-23 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
JP2018081982A (ja) * | 2016-11-15 | 2018-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2021186773A1 (ja) * | 2020-03-19 | 2021-09-23 | 株式会社日立パワーデバイス | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140477A (ja) * | 1992-10-26 | 1994-05-20 | Sanyo Electric Co Ltd | 混成集積回路 |
JPH0878469A (ja) * | 1994-06-30 | 1996-03-22 | Aichi Steel Works Ltd | アルミワイヤボンディング用パッド及びその製造方法 |
JPH11163045A (ja) * | 1997-11-26 | 1999-06-18 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003229450A (ja) * | 2002-01-31 | 2003-08-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004087772A (ja) * | 2002-08-27 | 2004-03-18 | Shin Kobe Electric Mach Co Ltd | ニッケルめっき電極 |
JP2005311284A (ja) * | 2004-03-23 | 2005-11-04 | Fuji Electric Holdings Co Ltd | パワー半導体素子およびこれを用いた半導体装置 |
-
2007
- 2007-09-21 JP JP2007244599A patent/JP5214936B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140477A (ja) * | 1992-10-26 | 1994-05-20 | Sanyo Electric Co Ltd | 混成集積回路 |
JPH0878469A (ja) * | 1994-06-30 | 1996-03-22 | Aichi Steel Works Ltd | アルミワイヤボンディング用パッド及びその製造方法 |
JPH11163045A (ja) * | 1997-11-26 | 1999-06-18 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003229450A (ja) * | 2002-01-31 | 2003-08-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004087772A (ja) * | 2002-08-27 | 2004-03-18 | Shin Kobe Electric Mach Co Ltd | ニッケルめっき電極 |
JP2005311284A (ja) * | 2004-03-23 | 2005-11-04 | Fuji Electric Holdings Co Ltd | パワー半導体素子およびこれを用いた半導体装置 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8791568B2 (en) | 2011-05-31 | 2014-07-29 | Mitsubishi Electric Corporation | Semiconductor device |
DE102012208246A1 (de) | 2011-05-31 | 2012-12-06 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
DE102012208246B4 (de) * | 2011-05-31 | 2017-04-06 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
JP2014187264A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体装置 |
JPWO2014175343A1 (ja) * | 2013-04-25 | 2017-02-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2014175343A1 (ja) * | 2013-04-25 | 2014-10-30 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9748186B2 (en) | 2013-04-25 | 2017-08-29 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
WO2014181688A1 (ja) * | 2013-05-10 | 2014-11-13 | 富士電機株式会社 | 半導体装置 |
JP6056968B2 (ja) * | 2013-05-10 | 2017-01-11 | 富士電機株式会社 | 半導体装置 |
CN105027272A (zh) * | 2013-05-10 | 2015-11-04 | 富士电机株式会社 | 半导体装置 |
US9978701B2 (en) | 2013-05-10 | 2018-05-22 | Fuji Electric Co., Ltd. | Semiconductor device |
CN110246772A (zh) * | 2013-05-10 | 2019-09-17 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP2015109334A (ja) * | 2013-12-04 | 2015-06-11 | 株式会社デンソー | 半導体装置 |
JP2016162913A (ja) * | 2015-03-03 | 2016-09-05 | 三菱電機株式会社 | 半導体モジュールおよびその製造方法 |
DE102016212506A1 (de) | 2015-08-18 | 2017-02-23 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
US9741587B2 (en) | 2015-08-18 | 2017-08-22 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
US10079155B2 (en) | 2015-08-18 | 2018-09-18 | Fuji Electric Co., Ltd. | Semiconductor device manufacturing method |
JP2018081982A (ja) * | 2016-11-15 | 2018-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2021186773A1 (ja) * | 2020-03-19 | 2021-09-23 | 株式会社日立パワーデバイス | 半導体装置 |
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