CN101866113B - 衬底处理方法、曝光装置及器件制造方法 - Google Patents

衬底处理方法、曝光装置及器件制造方法 Download PDF

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Publication number
CN101866113B
CN101866113B CN2010101407110A CN201010140711A CN101866113B CN 101866113 B CN101866113 B CN 101866113B CN 2010101407110 A CN2010101407110 A CN 2010101407110A CN 201010140711 A CN201010140711 A CN 201010140711A CN 101866113 B CN101866113 B CN 101866113B
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China
Prior art keywords
substrate
liquid
mentioned
immersion
exposure
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Chinese (zh)
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CN101866113A (zh
Inventor
中野胜志
奥村正彦
杉原太郎
水谷刚之
藤原朋春
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010101407110A 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法 Expired - Fee Related CN101866113B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004310993 2004-10-26
JP2004-310993 2004-10-26

Related Parent Applications (1)

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CN2005800359899A Division CN101044594B (zh) 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法

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CN101866113A CN101866113A (zh) 2010-10-20
CN101866113B true CN101866113B (zh) 2013-04-24

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CN2010101407110A Expired - Fee Related CN101866113B (zh) 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法
CN2005800359899A Expired - Fee Related CN101044594B (zh) 2004-10-26 2005-10-25 衬底处理方法、曝光装置及器件制造方法

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US (3) US8040489B2 (OSRAM)
EP (1) EP1814144B1 (OSRAM)
JP (2) JP4665712B2 (OSRAM)
KR (2) KR101285951B1 (OSRAM)
CN (2) CN101866113B (OSRAM)
TW (1) TWI436403B (OSRAM)
WO (1) WO2006046562A1 (OSRAM)

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JP4994976B2 (ja) * 2006-07-18 2012-08-08 東京エレクトロン株式会社 高屈折率液体循環システム、パターン形成方法およびコンピュータ読取可能な記憶媒体
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JP5402664B2 (ja) * 2010-01-19 2014-01-29 株式会社ニコン 洗浄方法、露光装置、及びデバイスの製造方法
NL2008168A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus.
NL2008845A (en) * 2011-05-24 2012-11-27 Asml Netherlands Bv Lithographic apparatus and component.
HK1246869A1 (zh) * 2015-05-28 2018-09-14 株式会社尼康 物体保持装置、曝光装置、平板显示器的制造方法及器件制造方法
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CN107255907B (zh) * 2017-08-17 2021-01-22 京东方科技集团股份有限公司 一种补偿装置、曝光装置及曝光补偿方法
CN107561747A (zh) * 2017-10-12 2018-01-09 惠科股份有限公司 一种显示基板的预烘烤装置及预烘烤系统
TWI673567B (zh) * 2018-02-13 2019-10-01 特銓股份有限公司 光罩靜電清潔設備以及光罩靜電清潔方法
CN110597021B (zh) * 2019-09-20 2021-04-23 上海华力微电子有限公司 浸没式光刻工艺中晶圆表面残水缺陷的改善方法

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