CN101714406A - 用于动态随机存取存储器的低功耗自动刷新电路和方法 - Google Patents

用于动态随机存取存储器的低功耗自动刷新电路和方法 Download PDF

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Publication number
CN101714406A
CN101714406A CN200910224517A CN200910224517A CN101714406A CN 101714406 A CN101714406 A CN 101714406A CN 200910224517 A CN200910224517 A CN 200910224517A CN 200910224517 A CN200910224517 A CN 200910224517A CN 101714406 A CN101714406 A CN 101714406A
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China
Prior art keywords
input buffer
signal
predetermined
built
automatically
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Pending
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CN200910224517A
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English (en)
Chinese (zh)
Inventor
蒂莫西·B·考尔斯
布赖恩·M·雪莉
格雷格·A·布洛杰特
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Micron Technology Inc
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Micron Technology Inc
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Publication of CN101714406A publication Critical patent/CN101714406A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
CN200910224517A 2001-10-18 2002-10-16 用于动态随机存取存储器的低功耗自动刷新电路和方法 Pending CN101714406A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/056,935 2001-10-18
US10/056,935 US6771553B2 (en) 2001-10-18 2001-10-18 Low power auto-refresh circuit and method for dynamic random access memories

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN02825349A Division CN100590730C (zh) 2001-10-18 2002-10-16 用于动态随机存取存储器的低功耗自动刷新电路和方法

Publications (1)

Publication Number Publication Date
CN101714406A true CN101714406A (zh) 2010-05-26

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CN200910224517A Pending CN101714406A (zh) 2001-10-18 2002-10-16 用于动态随机存取存储器的低功耗自动刷新电路和方法
CN02825349A Expired - Fee Related CN100590730C (zh) 2001-10-18 2002-10-16 用于动态随机存取存储器的低功耗自动刷新电路和方法

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CN02825349A Expired - Fee Related CN100590730C (zh) 2001-10-18 2002-10-16 用于动态随机存取存储器的低功耗自动刷新电路和方法

Country Status (6)

Country Link
US (2) US6771553B2 (enExample)
EP (1) EP1446804B1 (enExample)
JP (2) JP2005506647A (enExample)
KR (1) KR100779871B1 (enExample)
CN (2) CN101714406A (enExample)
WO (1) WO2003034435A1 (enExample)

Cited By (1)

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CN114721581A (zh) * 2021-01-04 2022-07-08 瑞昱半导体股份有限公司 用于同步动态随机存取内存的控制模块及其控制方法

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CN114721581A (zh) * 2021-01-04 2022-07-08 瑞昱半导体股份有限公司 用于同步动态随机存取内存的控制模块及其控制方法

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Publication number Publication date
KR20050036881A (ko) 2005-04-20
JP4923193B2 (ja) 2012-04-25
KR100779871B1 (ko) 2007-11-27
US7079439B2 (en) 2006-07-18
US20040268018A1 (en) 2004-12-30
WO2003034435A1 (en) 2003-04-24
JP2008287873A (ja) 2008-11-27
US6771553B2 (en) 2004-08-03
US20030076726A1 (en) 2003-04-24
EP1446804A4 (en) 2007-05-23
EP1446804A1 (en) 2004-08-18
CN100590730C (zh) 2010-02-17
JP2005506647A (ja) 2005-03-03
EP1446804B1 (en) 2014-07-16
CN1605105A (zh) 2005-04-06

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Application publication date: 20100526