KR100779871B1 - 동적 랜덤 액세스 메모리용 저전력 오토-리프레쉬 회로 및방법 - Google Patents

동적 랜덤 액세스 메모리용 저전력 오토-리프레쉬 회로 및방법 Download PDF

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KR100779871B1
KR100779871B1 KR1020047005809A KR20047005809A KR100779871B1 KR 100779871 B1 KR100779871 B1 KR 100779871B1 KR 1020047005809 A KR1020047005809 A KR 1020047005809A KR 20047005809 A KR20047005809 A KR 20047005809A KR 100779871 B1 KR100779871 B1 KR 100779871B1
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refresh
signal
command
predetermined
auto
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KR20050036881A (ko
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티모시 비. 코우레스
브리안 엠. 셜레이
그레그 에이. 브로드제트
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마이크론 테크놀로지 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1020047005809A 2001-10-18 2002-10-16 동적 랜덤 액세스 메모리용 저전력 오토-리프레쉬 회로 및방법 Expired - Fee Related KR100779871B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/056,935 2001-10-18
US10/056,935 US6771553B2 (en) 2001-10-18 2001-10-18 Low power auto-refresh circuit and method for dynamic random access memories

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KR20050036881A KR20050036881A (ko) 2005-04-20
KR100779871B1 true KR100779871B1 (ko) 2007-11-27

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US (2) US6771553B2 (enExample)
EP (1) EP1446804B1 (enExample)
JP (2) JP2005506647A (enExample)
KR (1) KR100779871B1 (enExample)
CN (2) CN101714406A (enExample)
WO (1) WO2003034435A1 (enExample)

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JP5795513B2 (ja) * 2011-09-28 2015-10-14 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
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KR102174818B1 (ko) * 2014-04-07 2020-11-06 에스케이하이닉스 주식회사 휘발성 메모리, 이를 포함하는 메모리 모듈 및 메모리 모듈의 동작 방법
KR20170045795A (ko) * 2015-10-20 2017-04-28 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
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KR102717098B1 (ko) * 2016-11-01 2024-10-15 삼성전자주식회사 단계별 저전력 상태들을 갖는 메모리 장치
JP7536431B2 (ja) * 2019-09-20 2024-08-20 キヤノン株式会社 メモリ制御装置およびその制御方法
CN110821633A (zh) * 2019-10-28 2020-02-21 奇瑞汽车股份有限公司 一种无级风扇在发动机控制器更新软件过程中的控制方法
CN114721581B (zh) * 2021-01-04 2025-08-19 瑞昱半导体股份有限公司 用于同步动态随机存取内存的控制模块及其控制方法

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KR20050036881A (ko) 2005-04-20
JP4923193B2 (ja) 2012-04-25
US7079439B2 (en) 2006-07-18
US20040268018A1 (en) 2004-12-30
WO2003034435A1 (en) 2003-04-24
JP2008287873A (ja) 2008-11-27
US6771553B2 (en) 2004-08-03
US20030076726A1 (en) 2003-04-24
CN101714406A (zh) 2010-05-26
EP1446804A4 (en) 2007-05-23
EP1446804A1 (en) 2004-08-18
CN100590730C (zh) 2010-02-17
JP2005506647A (ja) 2005-03-03
EP1446804B1 (en) 2014-07-16
CN1605105A (zh) 2005-04-06

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