CN101622701B - 电子制造中的锡银焊接凸点 - Google Patents

电子制造中的锡银焊接凸点 Download PDF

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Publication number
CN101622701B
CN101622701B CN2006800378536A CN200680037853A CN101622701B CN 101622701 B CN101622701 B CN 101622701B CN 2006800378536 A CN2006800378536 A CN 2006800378536A CN 200680037853 A CN200680037853 A CN 200680037853A CN 101622701 B CN101622701 B CN 101622701B
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China
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ions
tin
silver
electroplating
electroplating composition
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CN2006800378536A
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English (en)
Chinese (zh)
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CN101622701A (zh
Inventor
汤姆斯·B·理查德森
玛里斯·克莱恩菲德
克里斯蒂娜·里特曼
伊格·扎瓦里那
奥特鲁德·斯代第尼斯
张云
约瑟夫·A·阿比斯
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MacDermid Enthone Inc
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Enthone OMI Inc
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Publication of CN101622701A publication Critical patent/CN101622701A/zh
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/18—Regeneration of process solutions of electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
CN2006800378536A 2005-08-15 2006-08-14 电子制造中的锡银焊接凸点 Active CN101622701B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US70832805P 2005-08-15 2005-08-15
US60/708,328 2005-08-15
US11/463,355 2006-08-09
US11/463,355 US7713859B2 (en) 2005-08-15 2006-08-09 Tin-silver solder bumping in electronics manufacture
PCT/US2006/031618 WO2007022075A2 (en) 2005-08-15 2006-08-14 Tin-silver solder bumping in electronics manufacture

Publications (2)

Publication Number Publication Date
CN101622701A CN101622701A (zh) 2010-01-06
CN101622701B true CN101622701B (zh) 2013-06-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800378536A Active CN101622701B (zh) 2005-08-15 2006-08-14 电子制造中的锡银焊接凸点

Country Status (7)

Country Link
US (1) US7713859B2 (https=)
EP (1) EP1946362B1 (https=)
JP (1) JP5207968B2 (https=)
KR (1) KR101361305B1 (https=)
CN (1) CN101622701B (https=)
AT (1) ATE541306T1 (https=)
WO (1) WO2007022075A2 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291201B2 (en) * 2004-08-30 2007-11-06 National Tsing Hua University Method for making nano-scale lead-free solder
TW200735198A (en) * 2006-03-01 2007-09-16 Advanced Semiconductor Eng The method for removing the residual flux
US20090145764A1 (en) * 2007-12-11 2009-06-11 Enthone Inc. Composite coatings for whisker reduction
US8226807B2 (en) 2007-12-11 2012-07-24 Enthone Inc. Composite coatings for whisker reduction
JP2009191335A (ja) * 2008-02-15 2009-08-27 Ishihara Chem Co Ltd めっき液及び電子部品
JP4724192B2 (ja) * 2008-02-28 2011-07-13 株式会社東芝 電子部品の製造方法
EP2221396A1 (en) * 2008-12-31 2010-08-25 Rohm and Haas Electronic Materials LLC Lead-Free Tin Alloy Electroplating Compositions and Methods
US9175400B2 (en) * 2009-10-28 2015-11-03 Enthone Inc. Immersion tin silver plating in electronics manufacture
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US8113412B1 (en) * 2011-05-13 2012-02-14 Taiwan Semiconductor Manufacturing Company, Ltd Methods for detecting defect connections between metal bumps
CN103540971A (zh) * 2013-10-29 2014-01-29 常熟市伟达电镀有限责任公司 导电强的电镀液
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
US8877630B1 (en) * 2013-11-12 2014-11-04 Chipmos Technologies Inc. Semiconductor structure having a silver alloy bump body and manufacturing method thereof
US9368340B2 (en) 2014-06-02 2016-06-14 Lam Research Corporation Metallization of the wafer edge for optimized electroplating performance on resistive substrates
US9604316B2 (en) 2014-09-23 2017-03-28 Globalfoundries Inc. Tin-based solder composition with low void characteristic
TWI559829B (zh) * 2014-10-22 2016-11-21 矽品精密工業股份有限公司 封裝結構及其製法
JP6631349B2 (ja) * 2015-03-26 2020-01-15 三菱マテリアル株式会社 アンモニウム塩を用いためっき液
WO2016152986A1 (ja) * 2015-03-26 2016-09-29 三菱マテリアル株式会社 アンモニウム塩を用いためっき液
KR101722703B1 (ko) 2015-04-10 2017-04-03 엘티씨에이엠 주식회사 주석-은 솔더 범프 도금액
US20160308100A1 (en) * 2015-04-17 2016-10-20 Chipmos Technologies Inc Semiconductor package and method of manufacturing thereof
JP6733313B2 (ja) * 2015-08-29 2020-07-29 三菱マテリアル株式会社 高純度銅電解精錬用添加剤と高純度銅製造方法
US10793956B2 (en) * 2015-08-29 2020-10-06 Mitsubishi Materials Corporation Additive for high-purity copper electrolytic refining and method of producing high-purity copper
KR101722704B1 (ko) * 2015-12-16 2017-04-11 엘티씨에이엠 주식회사 주석-은 솔더 범프 고속 도금액 및 이를 이용한 도금 방법
CN106757212B (zh) * 2016-11-30 2018-02-02 昆山成功环保科技有限公司 用于晶圆级封装的电镀锡银合金溶液
KR102634249B1 (ko) 2018-12-27 2024-02-07 솔브레인 주식회사 도금 조성물 및 솔더 범프 형성 방법
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US12559852B2 (en) 2019-09-16 2026-02-24 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
CN112359380A (zh) * 2020-10-23 2021-02-12 珠海鑫通化工有限公司 一种被动元器件化学镀锡用电镀液
CN115029745A (zh) * 2022-07-08 2022-09-09 云南锡业集团（控股）有限责任公司研发中心 一种可减少元件镀层工艺步骤并提升焊点可靠性的方法
CN115070259A (zh) * 2022-07-15 2022-09-20 深圳市同方电子新材料有限公司 一种新型超细焊锡粉的环保无铅焊锡膏
KR20250124510A (ko) * 2024-02-13 2025-08-20 한국생산기술연구원 솔더 범프용 주석 도금액
KR20250124512A (ko) * 2024-02-13 2025-08-20 한국생산기술연구원 솔더 범프용 주석-은 도금액

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1570219A (zh) * 2003-04-07 2005-01-26 罗姆和哈斯电子材料有限责任公司 电镀组合物及电镀方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293391A (en) 1980-04-02 1981-10-06 Rohco, Inc. Cadmium plating baths and methods for electrodepositing bright cadmium deposits
JPS5967387A (ja) * 1982-10-08 1984-04-17 Hiyougoken すず、鉛及びすず―鉛合金メッキ浴
EP0126220A1 (de) * 1983-04-26 1984-11-28 Hüls Aktiengesellschaft Beizlösung zum Beizen von Metalloberflächen und deren Anwendung
US4582576A (en) 1985-03-26 1986-04-15 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
US4749626A (en) 1985-08-05 1988-06-07 Olin Corporation Whisker resistant tin coatings and baths and methods for making such coatings
US4715894A (en) 1985-08-29 1987-12-29 Techno Instruments Investments 1983 Ltd. Use of immersion tin and tin alloys as a bonding medium for multilayer circuits
US4935312A (en) 1987-06-25 1990-06-19 Nippon Mining Co., Ltd. Film carrier having tin and indium plated layers
JP3538499B2 (ja) * 1996-05-15 2004-06-14 株式会社大和化成研究所 錫−銀合金電気めっき浴
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
JP3776566B2 (ja) * 1997-07-01 2006-05-17 株式会社大和化成研究所 めっき方法
JP3782869B2 (ja) * 1997-07-01 2006-06-07 株式会社大和化成研究所 錫−銀合金めっき浴
JP3904333B2 (ja) * 1998-09-02 2007-04-11 株式会社大和化成研究所 錫又は錫合金めっき浴
JP2000265294A (ja) * 1999-03-15 2000-09-26 Matsushita Electric Ind Co Ltd 錫及び錫合金めっき浴、めっき皮膜及び半導体装置用のリードフレーム
JP3433291B2 (ja) 1999-09-27 2003-08-04 石原薬品株式会社 スズ−銅含有合金メッキ浴、スズ−銅含有合金メッキ方法及びスズ−銅含有合金メッキ皮膜が形成された物品
US6361823B1 (en) 1999-12-03 2002-03-26 Atotech Deutschland Gmbh Process for whisker-free aqueous electroless tin plating
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
DE10026680C1 (de) 2000-05-30 2002-02-21 Schloetter Fa Dr Ing Max Elektrolyt und Verfahren zur Abscheidung von Zinn-Silber-Legierungsschichten und Verwendung des Elektrolyten
US6706418B2 (en) 2000-07-01 2004-03-16 Shipley Company L.L.C. Metal alloy compositions and plating methods related thereto
WO2002090623A1 (fr) * 2001-05-09 2002-11-14 Ebara-Udylite Co., Ltd. Bain galvanoplastique et procede pour substrat de galvanoplastie faisant appel audit bain
US20030000846A1 (en) 2001-05-25 2003-01-02 Shipley Company, L.L.C. Plating method
US7045050B2 (en) 2001-07-31 2006-05-16 Sekisui Chemical Co., Ltd. Method for producing electroconductive particles
JP3881614B2 (ja) 2002-05-20 2007-02-14 株式会社大和化成研究所 回路パターン形成方法
US7273540B2 (en) 2002-07-25 2007-09-25 Shinryo Electronics Co., Ltd. Tin-silver-copper plating solution, plating film containing the same, and method for forming the plating film
US20040025384A1 (en) 2002-08-09 2004-02-12 Ptacek Robert J. Point of purchase display
US7012333B2 (en) * 2002-12-26 2006-03-14 Ebara Corporation Lead free bump and method of forming the same
JP4441726B2 (ja) * 2003-01-24 2010-03-31 石原薬品株式会社 スズ又はスズ合金の脂肪族スルホン酸メッキ浴の製造方法
US7029761B2 (en) 2003-04-30 2006-04-18 Mec Company Ltd. Bonding layer for bonding resin on copper surface

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1570219A (zh) * 2003-04-07 2005-01-26 罗姆和哈斯电子材料有限责任公司 电镀组合物及电镀方法

Also Published As

Publication number Publication date
US7713859B2 (en) 2010-05-11
US20070037377A1 (en) 2007-02-15
KR101361305B1 (ko) 2014-02-21
WO2007022075A3 (en) 2009-04-30
JP2009510255A (ja) 2009-03-12
KR20080034514A (ko) 2008-04-21
ATE541306T1 (de) 2012-01-15
EP1946362A2 (en) 2008-07-23
EP1946362A4 (en) 2010-01-06
JP5207968B2 (ja) 2013-06-12
EP1946362B1 (en) 2012-01-11
CN101622701A (zh) 2010-01-06
WO2007022075A2 (en) 2007-02-22

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