ATE541306T1 - Zinn-silber-lotbeulen bei der elektronikherstellung - Google Patents

Zinn-silber-lotbeulen bei der elektronikherstellung

Info

Publication number
ATE541306T1
ATE541306T1 AT06801412T AT06801412T ATE541306T1 AT E541306 T1 ATE541306 T1 AT E541306T1 AT 06801412 T AT06801412 T AT 06801412T AT 06801412 T AT06801412 T AT 06801412T AT E541306 T1 ATE541306 T1 AT E541306T1
Authority
AT
Austria
Prior art keywords
dents
tin
silver solder
electronics manufacturing
metal structure
Prior art date
Application number
AT06801412T
Other languages
English (en)
Inventor
Thomas Richardson
Marlies Kleinfeld
Christian Rietmann
Igor Zavarine
Ortrud Steinius
Yun Zhang
Joseph Abys
Original Assignee
Enthone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone filed Critical Enthone
Application granted granted Critical
Publication of ATE541306T1 publication Critical patent/ATE541306T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/30Electroplating: Baths therefor from solutions of tin
    • C25D3/32Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/60Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/16Regeneration of process solutions
    • C25D21/18Regeneration of process solutions of electrolytes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/114Manufacturing methods by blanket deposition of the material of the bump connector
    • H01L2224/1146Plating
    • H01L2224/11462Electroplating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01016Sulfur [S]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01041Niobium [Nb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
AT06801412T 2005-08-15 2006-08-14 Zinn-silber-lotbeulen bei der elektronikherstellung ATE541306T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US70832805P 2005-08-15 2005-08-15
US11/463,355 US7713859B2 (en) 2005-08-15 2006-08-09 Tin-silver solder bumping in electronics manufacture
PCT/US2006/031618 WO2007022075A2 (en) 2005-08-15 2006-08-14 Tin-silver solder bumping in electronics manufacture

Publications (1)

Publication Number Publication Date
ATE541306T1 true ATE541306T1 (de) 2012-01-15

Family

ID=37743065

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06801412T ATE541306T1 (de) 2005-08-15 2006-08-14 Zinn-silber-lotbeulen bei der elektronikherstellung

Country Status (7)

Country Link
US (1) US7713859B2 (de)
EP (1) EP1946362B1 (de)
JP (1) JP5207968B2 (de)
KR (1) KR101361305B1 (de)
CN (1) CN101622701B (de)
AT (1) ATE541306T1 (de)
WO (1) WO2007022075A2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291201B2 (en) * 2004-08-30 2007-11-06 National Tsing Hua University Method for making nano-scale lead-free solder
TW200735198A (en) * 2006-03-01 2007-09-16 Advanced Semiconductor Eng The method for removing the residual flux
US8226807B2 (en) * 2007-12-11 2012-07-24 Enthone Inc. Composite coatings for whisker reduction
US20090145764A1 (en) * 2007-12-11 2009-06-11 Enthone Inc. Composite coatings for whisker reduction
JP2009191335A (ja) * 2008-02-15 2009-08-27 Ishihara Chem Co Ltd めっき液及び電子部品
JP4724192B2 (ja) * 2008-02-28 2011-07-13 株式会社東芝 電子部品の製造方法
EP2221396A1 (de) * 2008-12-31 2010-08-25 Rohm and Haas Electronic Materials LLC Bleifreie Elektroplattierungszusammensetzungen aus Blechlegierung und Verfahren
US9175400B2 (en) * 2009-10-28 2015-11-03 Enthone Inc. Immersion tin silver plating in electronics manufacture
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US8113412B1 (en) * 2011-05-13 2012-02-14 Taiwan Semiconductor Manufacturing Company, Ltd Methods for detecting defect connections between metal bumps
CN103540971A (zh) * 2013-10-29 2014-01-29 常熟市伟达电镀有限责任公司 导电强的电镀液
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
US8877630B1 (en) * 2013-11-12 2014-11-04 Chipmos Technologies Inc. Semiconductor structure having a silver alloy bump body and manufacturing method thereof
US9368340B2 (en) 2014-06-02 2016-06-14 Lam Research Corporation Metallization of the wafer edge for optimized electroplating performance on resistive substrates
US9604316B2 (en) 2014-09-23 2017-03-28 Globalfoundries Inc. Tin-based solder composition with low void characteristic
TWI559829B (zh) * 2014-10-22 2016-11-21 矽品精密工業股份有限公司 封裝結構及其製法
JP6631349B2 (ja) * 2015-03-26 2020-01-15 三菱マテリアル株式会社 アンモニウム塩を用いためっき液
WO2016152986A1 (ja) * 2015-03-26 2016-09-29 三菱マテリアル株式会社 アンモニウム塩を用いためっき液
KR101722703B1 (ko) 2015-04-10 2017-04-03 엘티씨에이엠 주식회사 주석-은 솔더 범프 도금액
US20160308100A1 (en) * 2015-04-17 2016-10-20 Chipmos Technologies Inc Semiconductor package and method of manufacturing thereof
JP6733313B2 (ja) * 2015-08-29 2020-07-29 三菱マテリアル株式会社 高純度銅電解精錬用添加剤と高純度銅製造方法
US10793956B2 (en) * 2015-08-29 2020-10-06 Mitsubishi Materials Corporation Additive for high-purity copper electrolytic refining and method of producing high-purity copper
KR101722704B1 (ko) * 2015-12-16 2017-04-11 엘티씨에이엠 주식회사 주석-은 솔더 범프 고속 도금액 및 이를 이용한 도금 방법
CN106757212B (zh) * 2016-11-30 2018-02-02 昆山成功环保科技有限公司 用于晶圆级封装的电镀锡银合金溶液
KR102634249B1 (ko) 2018-12-27 2024-02-07 솔브레인 주식회사 도금 조성물 및 솔더 범프 형성 방법
CN111690958B (zh) * 2019-03-15 2023-07-28 上海新阳半导体材料股份有限公司 一种锡镀液、其制备方法和应用
US11280014B2 (en) 2020-06-05 2022-03-22 Macdermid Enthone Inc. Silver/tin electroplating bath and method of using the same
CN112359380A (zh) * 2020-10-23 2021-02-12 珠海鑫通化工有限公司 一种被动元器件化学镀锡用电镀液
CN115029745A (zh) * 2022-07-08 2022-09-09 云南锡业集团(控股)有限责任公司研发中心 一种可减少元件镀层工艺步骤并提升焊点可靠性的方法
CN115070259A (zh) * 2022-07-15 2022-09-20 深圳市同方电子新材料有限公司 一种新型超细焊锡粉的环保无铅焊锡膏

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293391A (en) * 1980-04-02 1981-10-06 Rohco, Inc. Cadmium plating baths and methods for electrodepositing bright cadmium deposits
JPS5967387A (ja) * 1982-10-08 1984-04-17 Hiyougoken すず、鉛及びすず―鉛合金メッキ浴
EP0126220A1 (de) * 1983-04-26 1984-11-28 Hüls Aktiengesellschaft Beizlösung zum Beizen von Metalloberflächen und deren Anwendung
US4582576A (en) * 1985-03-26 1986-04-15 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
US4749626A (en) * 1985-08-05 1988-06-07 Olin Corporation Whisker resistant tin coatings and baths and methods for making such coatings
US4715894A (en) * 1985-08-29 1987-12-29 Techno Instruments Investments 1983 Ltd. Use of immersion tin and tin alloys as a bonding medium for multilayer circuits
US4935312A (en) * 1987-06-25 1990-06-19 Nippon Mining Co., Ltd. Film carrier having tin and indium plated layers
JP3538499B2 (ja) * 1996-05-15 2004-06-14 株式会社大和化成研究所 錫−銀合金電気めっき浴
US6099713A (en) * 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
JP3782869B2 (ja) * 1997-07-01 2006-06-07 株式会社大和化成研究所 錫−銀合金めっき浴
JP3776566B2 (ja) * 1997-07-01 2006-05-17 株式会社大和化成研究所 めっき方法
JP3904333B2 (ja) * 1998-09-02 2007-04-11 株式会社大和化成研究所 錫又は錫合金めっき浴
JP2000265294A (ja) * 1999-03-15 2000-09-26 Matsushita Electric Ind Co Ltd 錫及び錫合金めっき浴、めっき皮膜及び半導体装置用のリードフレーム
JP3433291B2 (ja) * 1999-09-27 2003-08-04 石原薬品株式会社 スズ−銅含有合金メッキ浴、スズ−銅含有合金メッキ方法及びスズ−銅含有合金メッキ皮膜が形成された物品
US6361823B1 (en) * 1999-12-03 2002-03-26 Atotech Deutschland Gmbh Process for whisker-free aqueous electroless tin plating
US6638847B1 (en) * 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
DE10026680C1 (de) * 2000-05-30 2002-02-21 Schloetter Fa Dr Ing Max Elektrolyt und Verfahren zur Abscheidung von Zinn-Silber-Legierungsschichten und Verwendung des Elektrolyten
US6706418B2 (en) * 2000-07-01 2004-03-16 Shipley Company L.L.C. Metal alloy compositions and plating methods related thereto
US6800188B2 (en) * 2001-05-09 2004-10-05 Ebara-Udylite Co., Ltd. Copper plating bath and plating method for substrate using the copper plating bath
US20030000846A1 (en) * 2001-05-25 2003-01-02 Shipley Company, L.L.C. Plating method
TW554350B (en) * 2001-07-31 2003-09-21 Sekisui Chemical Co Ltd Method for producing electroconductive particles
JP3881614B2 (ja) * 2002-05-20 2007-02-14 株式会社大和化成研究所 回路パターン形成方法
US7273540B2 (en) * 2002-07-25 2007-09-25 Shinryo Electronics Co., Ltd. Tin-silver-copper plating solution, plating film containing the same, and method for forming the plating film
US20040025384A1 (en) 2002-08-09 2004-02-12 Ptacek Robert J. Point of purchase display
US7012333B2 (en) * 2002-12-26 2006-03-14 Ebara Corporation Lead free bump and method of forming the same
JP4441726B2 (ja) * 2003-01-24 2010-03-31 石原薬品株式会社 スズ又はスズ合金の脂肪族スルホン酸メッキ浴の製造方法
JP4758614B2 (ja) * 2003-04-07 2011-08-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 電気めっき組成物および方法
US7029761B2 (en) * 2003-04-30 2006-04-18 Mec Company Ltd. Bonding layer for bonding resin on copper surface

Also Published As

Publication number Publication date
EP1946362A4 (de) 2010-01-06
WO2007022075A3 (en) 2009-04-30
CN101622701A (zh) 2010-01-06
CN101622701B (zh) 2013-06-19
EP1946362A2 (de) 2008-07-23
JP2009510255A (ja) 2009-03-12
US20070037377A1 (en) 2007-02-15
KR20080034514A (ko) 2008-04-21
EP1946362B1 (de) 2012-01-11
JP5207968B2 (ja) 2013-06-12
WO2007022075A2 (en) 2007-02-22
KR101361305B1 (ko) 2014-02-21
US7713859B2 (en) 2010-05-11

Similar Documents

Publication Publication Date Title
ATE541306T1 (de) Zinn-silber-lotbeulen bei der elektronikherstellung
TW200607598A (en) Composition of a solder, and method of manufacturing a solder connection
TW200733868A (en) Method for preparing conductive pattern and conductive pattern prepared by the method
TW200506106A (en) Electroplating compositions and methods
TW200733332A (en) Printed circuit board for semiconductor package and method of manufacturing the same
JP2017112318A5 (de)
JP2007519261A5 (de)
MY138109A (en) Electronic part and surface treatment method of the same
US9458541B2 (en) Method for electroless plating of tin and tin alloys
DE602005011848D1 (de) Verbesserungen bei oder im zusammenhang mit lötmitteln
TW200746359A (en) Capacitor attachment method
WO2002063069A3 (en) Methods and systems for electro-or electroless-plating of metal in high-aspect ratio features
WO2018017379A3 (en) Apparatus and method of contact electroplating of isolated structures
WO2006089032B1 (en) Metal containers for solder paste
TW200724728A (en) Tin-silver solder bumping in electronics manufacture
WO2017066069A8 (en) Water soluble and air stable phosphaadamantanes as stabilizers for electroless metal deposition
MY118571A (en) Method for the manufacture of a leadless substrate especially a solder layer
US20200248312A1 (en) Electroless palladium plating solution, and electroless palladium plated coating
EP1230034A4 (de) Verfahren zur stromlosen verzinnung von kupfer oder kupferlegierungen
JP6270681B2 (ja) 配線構造体の製造方法、銅置換めっき液および配線構造体
KR101877296B1 (ko) 회로패턴 도금 방법
TW200717832A (en) Method for forming bumps
CN103579158B (zh) 一种共晶焊的硅金属化的金属件及其金属化工艺
TW202436687A (zh) 用於電鍍貴金屬之電鍍浴組合物以及沉積貴金屬層之方法
KR100994730B1 (ko) 인쇄회로기판의 회로표면 도금방법