CN101589454B - 电子元件的塑料封装体 - Google Patents
电子元件的塑料封装体 Download PDFInfo
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- CN101589454B CN101589454B CN2007800497879A CN200780049787A CN101589454B CN 101589454 B CN101589454 B CN 101589454B CN 2007800497879 A CN2007800497879 A CN 2007800497879A CN 200780049787 A CN200780049787 A CN 200780049787A CN 101589454 B CN101589454 B CN 101589454B
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12556—Organic component
- Y10T428/12569—Synthetic resin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
- Y10T428/12618—Plural oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
泄漏体积(cc) | 最大泄漏速率(atm-cc/sec) |
<=0.01 | 5×10-8 |
0.01<V<=0.4 | 1×10-7 |
>0.4 | 1×10-6 |
分子种类 | 分子量(Gram) | 直径(×10-8cm) | 粘度微泊20℃ | 分子质量(×10-24克) |
氦 | 4.0 | 2.2 | 194 | 6.64 |
氖 | 20.2 | 2.6 | 311 | 33.5 |
氩 | 40.0 | 3.7 | 222 | 66.2 |
氮 | 28.0 | 3.8 | 177 | 46.5 |
氧 | 32.0 | 3.6 | 202 | 53.1 |
空气 | 28.7 | 3.7 | 184 | 47.6 |
水 | 18.0 | 3.2 | 125100℃ | 29.9 |
二氧化碳 | 44.0 | 4.6 | 148 | 73.0 |
Claims (33)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87445006P | 2006-12-12 | 2006-12-12 | |
US60/874,450 | 2006-12-12 | ||
PCT/US2007/025452 WO2008073485A2 (en) | 2006-12-12 | 2007-12-12 | Plastic electronic component package |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101589454A CN101589454A (zh) | 2009-11-25 |
CN101589454B true CN101589454B (zh) | 2012-05-16 |
Family
ID=39512337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800497879A Active CN101589454B (zh) | 2006-12-12 | 2007-12-12 | 电子元件的塑料封装体 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20080150064A1 (zh) |
EP (1) | EP2100323A4 (zh) |
JP (1) | JP2010512665A (zh) |
CN (1) | CN101589454B (zh) |
WO (1) | WO2008073485A2 (zh) |
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Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176894A (ja) * | 2008-01-23 | 2009-08-06 | Panasonic Corp | 光学半導体装置 |
US8059404B2 (en) * | 2008-10-09 | 2011-11-15 | GM Global Technology Operations LLC | Power inverters |
JP2010228441A (ja) * | 2009-03-06 | 2010-10-14 | Sumitomo Chemical Co Ltd | 液晶ポリマーの成形体とガラス基材とを溶着する方法、及び、これにより製造された複合体 |
US20110057216A1 (en) * | 2009-09-10 | 2011-03-10 | Tong Hsing Electric Industries Ltd. | Low profile optoelectronic device package |
US9337360B1 (en) | 2009-11-16 | 2016-05-10 | Solar Junction Corporation | Non-alloyed contacts for III-V based solar cells |
US8587107B2 (en) | 2010-02-09 | 2013-11-19 | Microsemi Corporation | Silicon carbide semiconductor |
US8237171B2 (en) * | 2010-02-09 | 2012-08-07 | Microsemi Corporation | High voltage high package pressure semiconductor package |
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US20130025745A1 (en) * | 2011-07-27 | 2013-01-31 | Texas Instruments Incorporated | Mask-Less Selective Plating of Leadframes |
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CN102820409A (zh) * | 2012-08-13 | 2012-12-12 | 深圳市灏天光电有限公司 | 一种大功率led支架及大功率led封装结构 |
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US9466544B2 (en) | 2013-01-30 | 2016-10-11 | Freescale Semiconductor, Inc. | Semiconducitive catechol group encapsulant adhesion promoter for a packaged electronic device |
EP2790213A3 (en) * | 2013-04-11 | 2015-04-01 | Chun Ho Fan | Cavity package |
JP2017518640A (ja) * | 2014-05-23 | 2017-07-06 | マテリオン コーポレイション | エアキャビティパッケージ |
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US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122862A (en) * | 1989-03-15 | 1992-06-16 | Ngk Insulators, Ltd. | Ceramic lid for sealing semiconductor element and method of manufacturing the same |
US5529959A (en) * | 1992-06-23 | 1996-06-25 | Sony Corporation | Charge-coupled device image sensor |
US6313525B1 (en) * | 1997-07-10 | 2001-11-06 | Sony Corporation | Hollow package and method for fabricating the same and solid-state image apparatus provided therewith |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826381B2 (ja) * | 1979-04-28 | 1983-06-02 | 信越ポリマ−株式会社 | 電磁気シ−ルドガスケットおよびその製造方法 |
US4880591A (en) * | 1988-04-05 | 1989-11-14 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing speaker vibration member |
CA2047486C (en) * | 1990-07-21 | 2002-03-05 | Shigeru Katayama | Semiconductor device and method for manufacturing the same |
JP2876092B2 (ja) * | 1990-12-28 | 1999-03-31 | イビデン株式会社 | 電子部品搭載用基板におけるリードフレームの表面処理方法 |
US5250654A (en) * | 1992-05-04 | 1993-10-05 | E. I. Du Pont De Nemours And Company | Thermotropic liquid crystalline polyester compositions |
JP3270862B2 (ja) * | 1992-09-02 | 2002-04-02 | ソニー株式会社 | 固体撮像装置の製造方法 |
JPH0677526A (ja) * | 1992-08-25 | 1994-03-18 | Nippondenso Co Ltd | 樹脂封止形光電変換装置及びその製造方法 |
JPH0685221A (ja) * | 1992-08-31 | 1994-03-25 | Sony Corp | 固体撮像装置 |
JP2853550B2 (ja) * | 1994-01-25 | 1999-02-03 | 松下電工株式会社 | エポキシ樹脂組成物及びその製造方法及びそれを用いた半導体装置 |
US5586214A (en) * | 1994-12-29 | 1996-12-17 | Energy Convertors, Inc. | Immersion heating element with electric resistance heating material and polymeric layer disposed thereon |
US5691689A (en) * | 1995-08-11 | 1997-11-25 | Eaton Corporation | Electrical circuit protection devices comprising PTC conductive liquid crystal polymer compositions |
US6011294A (en) * | 1996-04-08 | 2000-01-04 | Eastman Kodak Company | Low cost CCD packaging |
US6409859B1 (en) * | 1998-06-30 | 2002-06-25 | Amerasia International Technology, Inc. | Method of making a laminated adhesive lid, as for an Electronic device |
JP3407218B2 (ja) * | 1998-12-09 | 2003-05-19 | 富士電機株式会社 | 半導体光センサデバイス |
JP2001127229A (ja) * | 1999-11-01 | 2001-05-11 | Nec Corp | リードフレーム及びそのリードフレームを用いた樹脂封止型半導体装置 |
US6455774B1 (en) * | 1999-12-08 | 2002-09-24 | Amkor Technology, Inc. | Molded image sensor package |
JP2001210776A (ja) * | 2000-01-24 | 2001-08-03 | Fujitsu Ltd | 半導体装置とその製造方法及びリードフレームとその製造方法 |
US6525405B1 (en) * | 2000-03-30 | 2003-02-25 | Alphatec Holding Company Limited | Leadless semiconductor product packaging apparatus having a window lid and method for packaging |
JP2001335708A (ja) * | 2000-05-26 | 2001-12-04 | Matsushita Electric Works Ltd | 熱可塑性樹脂組成物、その製造方法、並びに半導体素子収納用パッケージ |
JP2002094035A (ja) * | 2000-09-14 | 2002-03-29 | Shinko Electric Ind Co Ltd | 光透過用キャップ及びその製造方法 |
TW473951B (en) * | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
JP2002334944A (ja) * | 2001-05-08 | 2002-11-22 | Nec Corp | 中空構造パッケージ |
JP2002363395A (ja) * | 2001-05-31 | 2002-12-18 | Toray Ind Inc | 封止用樹脂組成物、成形品および電子封止部品 |
JP3831322B2 (ja) * | 2001-12-25 | 2006-10-11 | 日本碍子株式会社 | Iii族窒化物膜の製造方法、エピタキシャル成長用基板、iii族窒化物膜、iii族窒化物素子用エピタキシャル基板、及びiii族窒化物素子 |
SG157957A1 (en) * | 2003-01-29 | 2010-01-29 | Interplex Qlp Inc | Package for integrated circuit die |
JP3883543B2 (ja) * | 2003-04-16 | 2007-02-21 | 新光電気工業株式会社 | 導体基材及び半導体装置 |
US20040245590A1 (en) * | 2003-06-05 | 2004-12-09 | Jackson Hsieh | Image sensor package |
US7615563B2 (en) * | 2003-08-08 | 2009-11-10 | Gonzalez Iii Jesus E | Compositions useful as inhibitors of voltage-gated sodium channels |
US7645635B2 (en) * | 2004-08-16 | 2010-01-12 | Micron Technology, Inc. | Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages |
US7224047B2 (en) * | 2004-12-18 | 2007-05-29 | Lsi Corporation | Semiconductor device package with reduced leakage |
JP2006303484A (ja) * | 2005-03-25 | 2006-11-02 | Sumitomo Chemical Co Ltd | 固体撮像装置、固体撮像素子収納用ケース及び製造方法 |
-
2007
- 2007-12-12 CN CN2007800497879A patent/CN101589454B/zh active Active
- 2007-12-12 EP EP07853355A patent/EP2100323A4/en not_active Withdrawn
- 2007-12-12 JP JP2009541372A patent/JP2010512665A/ja active Pending
- 2007-12-12 US US12/001,792 patent/US20080150064A1/en not_active Abandoned
- 2007-12-12 WO PCT/US2007/025452 patent/WO2008073485A2/en active Application Filing
-
2008
- 2008-07-25 US US12/220,543 patent/US20080305355A1/en not_active Abandoned
-
2010
- 2010-11-19 US US12/950,528 patent/US8039945B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122862A (en) * | 1989-03-15 | 1992-06-16 | Ngk Insulators, Ltd. | Ceramic lid for sealing semiconductor element and method of manufacturing the same |
US5529959A (en) * | 1992-06-23 | 1996-06-25 | Sony Corporation | Charge-coupled device image sensor |
US6313525B1 (en) * | 1997-07-10 | 2001-11-06 | Sony Corporation | Hollow package and method for fabricating the same and solid-state image apparatus provided therewith |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808866A (zh) * | 2016-09-09 | 2018-03-16 | 日月光半导体制造股份有限公司 | 半导体装置封装 |
CN107808866B (zh) * | 2016-09-09 | 2022-01-28 | 日月光半导体制造股份有限公司 | 半导体装置封装 |
Also Published As
Publication number | Publication date |
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EP2100323A4 (en) | 2011-12-07 |
WO2008073485A3 (en) | 2008-11-13 |
WO2008073485A2 (en) | 2008-06-19 |
CN101589454A (zh) | 2009-11-25 |
US8039945B2 (en) | 2011-10-18 |
US20080305355A1 (en) | 2008-12-11 |
US20080150064A1 (en) | 2008-06-26 |
US20110064881A1 (en) | 2011-03-17 |
WO2008073485A4 (en) | 2008-12-31 |
EP2100323A2 (en) | 2009-09-16 |
JP2010512665A (ja) | 2010-04-22 |
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