CN101536164B - 具有凹陷场板的功率金属氧化物半导体场效应晶体管 - Google Patents

具有凹陷场板的功率金属氧化物半导体场效应晶体管 Download PDF

Info

Publication number
CN101536164B
CN101536164B CN2007800360768A CN200780036076A CN101536164B CN 101536164 B CN101536164 B CN 101536164B CN 2007800360768 A CN2007800360768 A CN 2007800360768A CN 200780036076 A CN200780036076 A CN 200780036076A CN 101536164 B CN101536164 B CN 101536164B
Authority
CN
China
Prior art keywords
trench
field plate
recessed field
region
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800360768A
Other languages
English (en)
Chinese (zh)
Other versions
CN101536164A (zh
Inventor
穆罕麦德·N·达维施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MaxPower Semiconductor Inc
Original Assignee
MaxPower Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39230511&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101536164(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by MaxPower Semiconductor Inc filed Critical MaxPower Semiconductor Inc
Publication of CN101536164A publication Critical patent/CN101536164A/zh
Application granted granted Critical
Publication of CN101536164B publication Critical patent/CN101536164B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2007800360768A 2006-09-27 2007-09-25 具有凹陷场板的功率金属氧化物半导体场效应晶体管 Active CN101536164B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84755106P 2006-09-27 2006-09-27
US60/847,551 2006-09-27
PCT/US2007/020684 WO2008039459A1 (en) 2006-09-27 2007-09-25 Power mosfet with recessed field plate

Publications (2)

Publication Number Publication Date
CN101536164A CN101536164A (zh) 2009-09-16
CN101536164B true CN101536164B (zh) 2012-06-20

Family

ID=39230511

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800360768A Active CN101536164B (zh) 2006-09-27 2007-09-25 具有凹陷场板的功率金属氧化物半导体场效应晶体管

Country Status (6)

Country Link
US (2) US7843004B2 (enrdf_load_stackoverflow)
EP (1) EP2070108A4 (enrdf_load_stackoverflow)
JP (1) JP2010505270A (enrdf_load_stackoverflow)
KR (1) KR101375035B1 (enrdf_load_stackoverflow)
CN (1) CN101536164B (enrdf_load_stackoverflow)
WO (1) WO2008039459A1 (enrdf_load_stackoverflow)

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI384620B (zh) * 2006-09-08 2013-02-01 Fairchild Semiconductor 具有金屬氧化半導體閘極式溝渠對溝渠之橫向電流流量之裝置、方法及系統
WO2008149800A1 (ja) * 2007-05-30 2008-12-11 Rohm Co., Ltd. 半導体装置
US7633121B2 (en) * 2007-10-31 2009-12-15 Force-Mos Technology Corp. Trench MOSFET with implanted drift region
US20090108343A1 (en) * 2007-10-31 2009-04-30 Gennadiy Nemtsev Semiconductor component and method of manufacture
JP2009135360A (ja) * 2007-12-03 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
EP2274770A4 (en) * 2008-04-28 2012-12-26 St Microelectronics Nv MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER
WO2009151657A1 (en) * 2008-06-11 2009-12-17 Maxpower Semiconductor Inc. Super self-aligned trench mosfet devices, methods and systems
US20090321818A1 (en) * 2008-06-30 2009-12-31 Infineon Technologies Austria Ag Semiconductor component with two-stage body zone
WO2010008617A1 (en) * 2008-07-15 2010-01-21 Maxpower Semiconductor Inc. Mosfet switch with embedded electrostatic charge
US8203181B2 (en) * 2008-09-30 2012-06-19 Infineon Technologies Austria Ag Trench MOSFET semiconductor device and manufacturing method therefor
US8022474B2 (en) 2008-09-30 2011-09-20 Infineon Technologies Austria Ag Semiconductor device
EP2384518B1 (en) 2009-01-06 2019-09-04 STMicroelectronics N.V. Self-bootstrapping field effect diode structures and methods
US7851312B2 (en) * 2009-01-23 2010-12-14 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US7936014B2 (en) * 2009-05-18 2011-05-03 Force Mos Technology Co., Ltd. Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
US20110057259A1 (en) * 2009-09-04 2011-03-10 Tiesheng Li Method for forming a thick bottom oxide (tbo) in a trench mosfet
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US10026835B2 (en) * 2009-10-28 2018-07-17 Vishay-Siliconix Field boosted metal-oxide-semiconductor field effect transistor
US8198678B2 (en) 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
WO2011087994A2 (en) * 2010-01-12 2011-07-21 Maxpower Semiconductor Inc. Devices, components and methods combining trench field plates with immobile electrostatic charge
WO2011101955A1 (ja) 2010-02-16 2011-08-25 トヨタ自動車株式会社 半導体装置
JP5762689B2 (ja) * 2010-02-26 2015-08-12 株式会社東芝 半導体装置
CN102859699B (zh) 2010-03-02 2016-01-06 维西埃-硅化物公司 制造双栅极装置的结构和方法
WO2011133481A2 (en) * 2010-04-20 2011-10-27 Maxpower Semiconductor Inc. Power mosfet with embedded recessed field plate and methods of fabrication
JP5633992B2 (ja) 2010-06-11 2014-12-03 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法
WO2012006261A2 (en) 2010-07-06 2012-01-12 Maxpower Semiconductor Inc. Power semiconductor devices, structures, and related methods
JP5580150B2 (ja) * 2010-09-09 2014-08-27 株式会社東芝 半導体装置
US9806190B2 (en) * 2010-10-28 2017-10-31 Texas Instruments Incorporated High voltage drain extension on thin buried oxide SOI
US20120261746A1 (en) * 2011-03-14 2012-10-18 Maxpower Semiconductor, Inc. Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact
US8598654B2 (en) * 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
KR101809463B1 (ko) 2011-05-02 2017-12-15 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조 방법
DE112012002136B4 (de) * 2011-05-18 2025-03-27 Vishay-Siliconix Halbleitervorrichtungen
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
TWI421923B (zh) * 2011-06-20 2014-01-01 Great Power Semiconductor Corp 具有源極溝槽之溝槽式功率半導體元件的製造方法
WO2013001782A1 (ja) * 2011-06-27 2013-01-03 パナソニック株式会社 炭化珪素半導体素子及びその製造方法
US9312335B2 (en) 2011-09-23 2016-04-12 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor with narrow trench emitter
JP2013084904A (ja) * 2011-09-29 2013-05-09 Toshiba Corp 半導体装置
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
US9048118B2 (en) * 2012-02-13 2015-06-02 Maxpower Semiconductor Inc. Lateral transistors with low-voltage-drop shunt to body diode
US8697560B2 (en) 2012-02-24 2014-04-15 Semiconductor Components Industries, Llc Process of forming an electronic device including a trench and a conductive structure therein
US9070585B2 (en) 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
CN103325685A (zh) * 2012-03-23 2013-09-25 无锡维赛半导体有限公司 深沟槽功率半导体场效应晶体管及其制作方法
CN103390645B (zh) * 2012-05-08 2016-08-03 上海韦尔半导体股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
MY180765A (en) * 2012-06-11 2020-12-08 Mimos Berhad Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors
US8669611B2 (en) 2012-07-11 2014-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for power MOS transistor
US9130060B2 (en) 2012-07-11 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having a vertical power MOS transistor
US8975691B2 (en) * 2012-08-13 2015-03-10 Great Power Semiconductor Corp. Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof
JP5802636B2 (ja) * 2012-09-18 2015-10-28 株式会社東芝 半導体装置およびその製造方法
US9941403B2 (en) * 2012-09-26 2018-04-10 Infineon Technologies Ag Semiconductor device and method for manufacturing a semiconductor device
US9437440B2 (en) 2012-11-21 2016-09-06 Infineon Technologies Dresden Gmbh Method for manufacturing a semiconductor device
US8753935B1 (en) 2012-12-21 2014-06-17 Alpha And Omega Semiconductor Incorporated High frequency switching MOSFETs with low output capacitance using a depletable P-shield
US8951867B2 (en) 2012-12-21 2015-02-10 Alpha And Omega Semiconductor Incorporated High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
US8809948B1 (en) 2012-12-21 2014-08-19 Alpha And Omega Semiconductor Incorporated Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
CN104885227B (zh) * 2012-12-28 2017-08-25 三菱电机株式会社 碳化硅半导体器件及其制造方法
US9105494B2 (en) 2013-02-25 2015-08-11 Alpha and Omega Semiconductors, Incorporated Termination trench for power MOSFET applications
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9306061B2 (en) 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
US9240476B2 (en) 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9012984B2 (en) * 2013-03-13 2015-04-21 Cree, Inc. Field effect transistor devices with regrown p-layers
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法
KR20150011185A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9666663B2 (en) * 2013-08-09 2017-05-30 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
US9111766B2 (en) * 2013-09-24 2015-08-18 Infineon Technologies Austria Ag Transistor device with a field electrode
US9136368B2 (en) * 2013-10-03 2015-09-15 Texas Instruments Incorporated Trench gate trench field plate semi-vertical semi-lateral MOSFET
US20150118810A1 (en) * 2013-10-24 2015-04-30 Madhur Bobde Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path
US9324802B2 (en) * 2013-10-31 2016-04-26 Infineon Technologies Austria Spacer supported lateral channel FET
US9570577B2 (en) * 2014-05-12 2017-02-14 Infineon Technologies Ag Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
DE102014109846B4 (de) * 2014-07-14 2020-06-18 Infineon Technologies Austria Ag Leistungs-MOSFET und Verfahren zum Herstellen eines Leistungs-MOSFET
CN104518028A (zh) * 2014-08-13 2015-04-15 上海华虹宏力半导体制造有限公司 基于屏蔽栅结构的沟槽栅mosfet
US9324823B2 (en) 2014-08-15 2016-04-26 Infineon Technologies Austria Ag Semiconductor device having a tapered gate structure and method
CN115483211A (zh) 2014-08-19 2022-12-16 维西埃-硅化物公司 电子电路
CN113838912A (zh) * 2014-11-18 2021-12-24 罗姆股份有限公司 半导体装置及半导体装置的制造方法
US9425187B1 (en) 2015-02-13 2016-08-23 The United States Of America As Represented By The Secretary Of The Navy Apparatus and methods for modulating current / voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures
US9425303B1 (en) * 2015-02-13 2016-08-23 The United States Of America As Represented By The Secretary Of The Navy Controlling current or mitigating electromagnetic or radiation interference effects using multiple and different semi-conductive channel regions generating structures
US9478639B2 (en) 2015-02-27 2016-10-25 Infineon Technologies Austria Ag Electrode-aligned selective epitaxy method for vertical power devices
US9595519B2 (en) * 2015-03-19 2017-03-14 The United States Of America As Represented By The Secretary Of The Navy Combination metal oxide semi-conductor field effect transistor (MOSFET) and junction field effect transistor (JFET) operable for modulating current voltage response or mitigating electromagnetic or radiation interference effects by altering current flow through the MOSFETs semi-conductive channel region (SCR)
JP6089070B2 (ja) * 2015-06-02 2017-03-01 株式会社東芝 半導体装置
JP6472714B2 (ja) * 2015-06-03 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6561611B2 (ja) * 2015-06-17 2019-08-21 富士電機株式会社 半導体装置
CN107210322B (zh) * 2015-07-07 2020-11-06 富士电机株式会社 半导体装置
JP2017054958A (ja) * 2015-09-10 2017-03-16 株式会社東芝 半導体装置
WO2017047286A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
DE102015122938B4 (de) 2015-12-30 2021-11-11 Infineon Technologies Austria Ag Transistor mit feldelektrode und verfahren zu dessen herstellung
WO2017133904A1 (en) * 2016-02-02 2017-08-10 Abb Schweiz Ag Power semiconductor device
CN106158973A (zh) * 2016-07-06 2016-11-23 电子科技大学 一种积累型dmos
CN106098779B (zh) * 2016-07-18 2019-10-29 中国科学院微电子研究所 一种槽栅vdmos
CN106206738B (zh) * 2016-08-22 2019-09-27 电子科技大学 一种积累型功率dmos器件
JP6786316B2 (ja) * 2016-09-12 2020-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106298946A (zh) * 2016-10-09 2017-01-04 无锡新洁能股份有限公司 一种降低低压Trench DMOS导通电阻的制造方法
DE212018000102U1 (de) * 2017-05-17 2019-08-05 Rohm Co., Ltd. Halbleitervorrichtung
JP7280666B2 (ja) * 2017-05-17 2023-05-24 ローム株式会社 半導体装置およびその製造方法
US10573745B2 (en) 2017-05-23 2020-02-25 International Business Machines Corporation Super long channel device within VFET architecture
US10424663B2 (en) * 2017-05-23 2019-09-24 International Business Machines Corporation Super long channel device within VFET architecture
JP6922535B2 (ja) * 2017-08-04 2021-08-18 富士電機株式会社 半導体装置および半導体装置の製造方法
CN108376708B (zh) * 2018-02-13 2021-08-24 天津中科先进技术研究院有限公司 具有耐压结构的半导体器件及其制作方法
JP2019050434A (ja) * 2019-01-04 2019-03-28 株式会社東芝 半導体装置
CN113261079B (zh) 2019-01-08 2024-07-23 三菱电机株式会社 半导体装置以及电力变换装置
JP7196000B2 (ja) * 2019-04-02 2022-12-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
DE102019207761A1 (de) * 2019-05-27 2020-12-03 Robert Bosch Gmbh Verfahren zur Herstellung eines Leistungstransistors und Leistungstransistor
CN110400802A (zh) * 2019-08-22 2019-11-01 无锡沃达科半导体技术有限公司 新型共漏双mosfet结构及其形成方法
JP7164497B2 (ja) * 2019-08-23 2022-11-01 株式会社東芝 半導体装置
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
JP2021086949A (ja) * 2019-11-28 2021-06-03 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
CN113035947A (zh) * 2019-12-24 2021-06-25 珠海格力电器股份有限公司 功率器件、电力电子设备及功率器件的制作方法
CN113053752B (zh) * 2020-03-17 2025-05-02 台积电(中国)有限公司 半导体器件及其制造方法
US11502192B2 (en) * 2020-04-24 2022-11-15 Stmicroelectronics Pte Ltd Monolithic charge coupled field effect rectifier embedded in a charge coupled field effect transistor
CN113690301B (zh) * 2020-05-18 2024-01-26 华润微电子（重庆）有限公司 半导体器件及其制备方法
CN112002751A (zh) * 2020-07-22 2020-11-27 湖南国芯半导体科技有限公司 碳化硅vdmosfet器件的元胞结构、其制备方法及碳化硅vdmosfet器件
JP7365306B2 (ja) 2020-09-09 2023-10-19 株式会社東芝 半導体装置
US11387338B1 (en) 2021-01-22 2022-07-12 Applied Materials, Inc. Methods for forming planar metal-oxide-semiconductor field-effect transistors
US20220336594A1 (en) * 2021-04-14 2022-10-20 Infineon Technologies Austria Ag Transistor device having charge compensating field plates in-line with body contacts
CN113113473B (zh) * 2021-04-16 2022-08-12 深圳真茂佳半导体有限公司 场效晶体管结构及其制造方法、芯片装置
CN115881776A (zh) * 2022-12-14 2023-03-31 上海功成半导体科技有限公司 功率器件及其制作方法和电子器件
EP4542859A3 (en) * 2023-01-24 2025-07-02 Infineon Technologies Austria AG Semiconductor device
CN116779649B (zh) * 2023-08-18 2023-12-01 深圳市锐骏半导体股份有限公司 半导体功率器件版图

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879980A (en) * 1997-03-24 1999-03-09 Advanced Micro Devices, Inc. Method of making static random access memory cell having a trench field plate for increased capacitance
US6388286B1 (en) * 1998-10-26 2002-05-14 North Carolina State University Power semiconductor devices having trench-based gate electrodes and field plates
US6833584B2 (en) * 2001-06-08 2004-12-21 Infineon Technologies Ag Trench power semiconductor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366914A (en) * 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
US5341011A (en) * 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor
JPH08264772A (ja) * 1995-03-23 1996-10-11 Toyota Motor Corp 電界効果型半導体素子
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
KR100218260B1 (ko) * 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5907776A (en) * 1997-07-11 1999-05-25 Magepower Semiconductor Corp. Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
AU2002230482A1 (en) * 2000-11-16 2002-05-27 Silicon Wireless Corporation Discrete and packaged power devices for radio frequency (rf) applications and methods of forming same
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
CN1181559C (zh) * 2001-11-21 2004-12-22 同济大学 一种半导体器件
KR20030078867A (ko) * 2002-01-28 2003-10-08 미쓰비시덴키 가부시키가이샤 반도체 장치
US7232726B2 (en) * 2002-05-31 2007-06-19 Nxp, B.V. Trench-gate semiconductor device and method of manufacturing
JP4109565B2 (ja) * 2003-03-31 2008-07-02 ローム株式会社 半導体装置の製造方法および半導体装置
US7465986B2 (en) * 2004-08-27 2008-12-16 International Rectifier Corporation Power semiconductor device including insulated source electrodes inside trenches
US7453119B2 (en) * 2005-02-11 2008-11-18 Alphs & Omega Semiconductor, Ltd. Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
JP2006237066A (ja) * 2005-02-22 2006-09-07 Toshiba Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879980A (en) * 1997-03-24 1999-03-09 Advanced Micro Devices, Inc. Method of making static random access memory cell having a trench field plate for increased capacitance
US6388286B1 (en) * 1998-10-26 2002-05-14 North Carolina State University Power semiconductor devices having trench-based gate electrodes and field plates
US6833584B2 (en) * 2001-06-08 2004-12-21 Infineon Technologies Ag Trench power semiconductor

Also Published As

Publication number Publication date
JP2010505270A (ja) 2010-02-18
CN101536164A (zh) 2009-09-16
KR20090057976A (ko) 2009-06-08
KR101375035B1 (ko) 2014-03-14
US20110039384A1 (en) 2011-02-17
EP2070108A4 (en) 2010-12-01
US20080073707A1 (en) 2008-03-27
US7843004B2 (en) 2010-11-30
EP2070108A1 (en) 2009-06-17
WO2008039459A1 (en) 2008-04-03

Similar Documents

Publication Publication Date Title
CN101536164B (zh) 具有凹陷场板的功率金属氧化物半导体场效应晶体管
US9842925B2 (en) Insulated gate semiconductor device having a shield electrode structure and method
US8907394B2 (en) Insulated gate semiconductor device having shield electrode structure
US9306018B2 (en) Trench shielding structure for semiconductor device and method
KR102177431B1 (ko) 반도체 소자
US8889532B2 (en) Method of making an insulated gate semiconductor device and structure
US8362548B2 (en) Contact structure for semiconductor device having trench shield electrode and method
US7915672B2 (en) Semiconductor device having trench shield electrode structure
US20050029586A1 (en) Semiconductor device having trench gate structure and manufacturing method thereof
US20100308400A1 (en) Semiconductor Power Switches Having Trench Gates
US20120094457A1 (en) Sti-aligned ldmos drift implant to enhance manufacturability while optimizing rdson and safe operating area
US20070032020A1 (en) Structures and methods for forming shielded gate field effect transistors
CN104752492B (zh) 用于制造半导体器件的方法和半导体器件
JP2011512677A (ja) 半導体素子構造及び関連プロセス
TW202006956A (zh) 具有整合的偽肖特基二極體於源極接觸溝槽之功率金屬氧化物半導體場效電晶體
CN102280486A (zh) 半导体器件及其制作方法
JP2004063844A (ja) 半導体装置及びその製造方法
HK1144492B (en) Semiconductor component and method of manufacture
HK1144492A1 (en) Semiconductor component and method of manufacture

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant