WO2008149800A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008149800A1
WO2008149800A1 PCT/JP2008/060007 JP2008060007W WO2008149800A1 WO 2008149800 A1 WO2008149800 A1 WO 2008149800A1 JP 2008060007 W JP2008060007 W JP 2008060007W WO 2008149800 A1 WO2008149800 A1 WO 2008149800A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
trenches
embedded electrodes
semiconductor device
adjacent trenches
Prior art date
Application number
PCT/JP2008/060007
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007143221A external-priority patent/JP2008300496A/ja
Priority claimed from JP2007143214A external-priority patent/JP2008300494A/ja
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/601,923 priority Critical patent/US8575687B2/en
Publication of WO2008149800A1 publication Critical patent/WO2008149800A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact

Abstract

　オン抵抗を大幅に低減することが可能な半導体装置を提供する。この半導体装置は、隣接するトレンチ（３）間の各領域がチャネル（９）となるｎ型エピタキシャル層（２）と、複数のトレンチ（３）の各々の内面上にシリコン酸化膜（４）を介して形成された複数の埋め込み電極（５）とを備えている。複数の埋め込み電極（５）は、互いに別個に電圧が印加される２種類の埋め込み電極（５ａ、５ｂ）に分けられており、全てのトレンチ（３）の周辺に形成される空乏層（１０）で隣接するトレンチ（３）間の各領域を塞ぐことにより、隣接するトレンチ（３）間の各領域を流れる電流が遮断される一方、埋め込み電極（５ａ）が埋め込まれたトレンチ（３ａ）の周辺に形成された空乏層（１０ａ）を消滅させることにより、隣接するトレンチ（３）間の各領域を介して電流が流れるように構成されている。
PCT/JP2008/060007 2007-05-30 2008-05-30 半導体装置 WO2008149800A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/601,923 US8575687B2 (en) 2007-05-30 2008-05-30 Semiconductor switch device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007143221A JP2008300496A (ja) 2007-05-30 2007-05-30 半導体装置
JP2007-143214 2007-05-30
JP2007-143221 2007-05-30
JP2007143214A JP2008300494A (ja) 2007-05-30 2007-05-30 半導体装置

Publications (1)

Publication Number Publication Date
WO2008149800A1 true WO2008149800A1 (ja) 2008-12-11

Family

ID=40093618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060007 WO2008149800A1 (ja) 2007-05-30 2008-05-30 半導体装置

Country Status (2)

Country Link
US (1) US8575687B2 (ja)
WO (1) WO2008149800A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015225976A (ja) * 2014-05-28 2015-12-14 株式会社東芝 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860129B2 (en) 2007-05-30 2014-10-14 Rohm Co., Ltd. Semiconductor device
KR102163602B1 (ko) * 2017-07-13 2020-10-12 매그나칩 반도체 유한회사 실리콘-전도층-실리콘 스택 구조의 반도체 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
JP2003229570A (ja) * 2001-11-27 2003-08-15 Nissan Motor Co Ltd 炭化珪素半導体を用いた電界効果トランジスタ
JP2004356383A (ja) * 2003-05-29 2004-12-16 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005101551A (ja) * 2003-08-29 2005-04-14 Fuji Electric Holdings Co Ltd 半導体装置とその製造方法およびその半導体装置を用いた双方向スイッチ素子

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EP0339962A3 (en) 1988-04-27 1990-09-26 General Electric Company Field effect semiconductor device
GB2239561B (en) * 1989-12-28 1993-10-20 Nissan Motor Method of manufacturing a field effect transistor
JP2893835B2 (ja) 1990-04-06 1999-05-24 日産自動車株式会社 半導体装置の製造方法
JP3319228B2 (ja) 1994-12-09 2002-08-26 富士電機株式会社 たて型半導体素子およびその製造方法
JP3575331B2 (ja) 1999-05-17 2004-10-13 日産自動車株式会社 電界効果トランジスタ
JP2001007149A (ja) * 1999-06-24 2001-01-12 Nec Corp 高出力半導体装置
JP2001168333A (ja) 1999-09-30 2001-06-22 Toshiba Corp トレンチゲート付き半導体装置
JP3289141B2 (ja) 1999-11-26 2002-06-04 京セラ株式会社 定着装置のウォームアップ方法
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7157785B2 (en) * 2003-08-29 2007-01-02 Fuji Electric Device Technology Co., Ltd. Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
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JP5074671B2 (ja) * 2005-04-28 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7687851B2 (en) * 2005-11-23 2010-03-30 M-Mos Semiconductor Sdn. Bhd. High density trench MOSFET with reduced on-resistance
KR101375035B1 (ko) * 2006-09-27 2014-03-14 맥스파워 세미컨덕터 인크. Ｍｏｓｆｅｔ 및 그 제조 방법
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229570A (ja) * 2001-11-27 2003-08-15 Nissan Motor Co Ltd 炭化珪素半導体を用いた電界効果トランジスタ
JP2003224277A (ja) * 2002-01-31 2003-08-08 Denso Corp 炭化珪素半導体装置とその製造方法
JP2004356383A (ja) * 2003-05-29 2004-12-16 Shindengen Electric Mfg Co Ltd 半導体装置
JP2005101551A (ja) * 2003-08-29 2005-04-14 Fuji Electric Holdings Co Ltd 半導体装置とその製造方法およびその半導体装置を用いた双方向スイッチ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015225976A (ja) * 2014-05-28 2015-12-14 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US20100176447A1 (en) 2010-07-15
US8575687B2 (en) 2013-11-05

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