CN101461037B - 用于微电子装置的电组件及形成所述电组件的方法 - Google Patents

用于微电子装置的电组件及形成所述电组件的方法 Download PDF

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Publication number
CN101461037B
CN101461037B CN2007800210506A CN200780021050A CN101461037B CN 101461037 B CN101461037 B CN 101461037B CN 2007800210506 A CN2007800210506 A CN 2007800210506A CN 200780021050 A CN200780021050 A CN 200780021050A CN 101461037 B CN101461037 B CN 101461037B
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China
Prior art keywords
conductive layer
dielectric layer
liner
layer
dielectric
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Chinese (zh)
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CN101461037A (zh
Inventor
里希凯什·克里希南
丹·贾利
维迪亚·希里维迪亚
诺埃尔·罗克莱恩
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/255—Means for correcting the capacitance value
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2007800210506A 2006-05-10 2007-05-01 用于微电子装置的电组件及形成所述电组件的方法 Active CN101461037B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/431,958 2006-05-10
US11/431,958 US7560392B2 (en) 2006-05-10 2006-05-10 Electrical components for microelectronic devices and methods of forming the same
PCT/US2007/067942 WO2007133936A1 (en) 2006-05-10 2007-05-01 Electrical components for microelectronic devices and methods of forming the same

Publications (2)

Publication Number Publication Date
CN101461037A CN101461037A (zh) 2009-06-17
CN101461037B true CN101461037B (zh) 2010-08-25

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ID=38542006

Family Applications (1)

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CN2007800210506A Active CN101461037B (zh) 2006-05-10 2007-05-01 用于微电子装置的电组件及形成所述电组件的方法

Country Status (7)

Country Link
US (4) US7560392B2 (https=)
EP (1) EP2016616A1 (https=)
JP (1) JP5163965B2 (https=)
KR (1) KR101127741B1 (https=)
CN (1) CN101461037B (https=)
TW (1) TWI365513B (https=)
WO (1) WO2007133936A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807582B2 (en) * 2006-03-06 2010-10-05 Micron Technology, Inc. Method of forming contacts for a memory device
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same
KR100919712B1 (ko) * 2007-06-27 2009-10-06 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
US8124528B2 (en) 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
KR20100079293A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 커패시터 및 그 제조 방법
US9159551B2 (en) * 2009-07-02 2015-10-13 Micron Technology, Inc. Methods of forming capacitors
JP2013021012A (ja) 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置の製造方法
US9466660B2 (en) * 2013-10-16 2016-10-11 Micron Technology, Inc. Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
US10553673B2 (en) * 2017-12-27 2020-02-04 Micron Technology, Inc. Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor
JP7228849B2 (ja) 2018-04-04 2023-02-27 パナソニックＩｐマネジメント株式会社 電子デバイス及びその製造方法
CN113299651B (zh) * 2020-02-24 2023-06-16 长鑫存储技术有限公司 半导体结构制备方法和半导体结构

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CN1519916A (zh) * 2003-01-20 2004-08-11 �����ɷ� 制作dram的存储单元的方法
CN1615538A (zh) * 2002-01-15 2005-05-11 因芬尼昂技术股份公司 具改善阻障性质之阻障堆栈

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JPH0218895A (ja) * 1988-07-04 1990-01-23 Murata Mfg Co Ltd 薄膜ｅｌ素子
US5668040A (en) * 1995-03-20 1997-09-16 Lg Semicon Co., Ltd. Method for forming a semiconductor device electrode which also serves as a diffusion barrier
JP2645811B2 (ja) * 1995-03-20 1997-08-25 エルジイ・セミコン・カンパニイ・リミテッド 拡散バリヤ機能を有する半導体素子の電極形成方法
JP3512959B2 (ja) * 1996-11-14 2004-03-31 株式会社東芝 半導体装置及びその製造方法
JPH11274419A (ja) * 1998-03-26 1999-10-08 Toshiba Corp 薄膜キャパシタ
KR100290895B1 (ko) * 1998-06-30 2001-07-12 김영환 반도체 소자의 커패시터 구조 및 이의 제조 방법
JP3768357B2 (ja) * 1998-12-01 2006-04-19 富士通株式会社 高誘電体キャパシタの製造方法
US6475854B2 (en) * 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
JP3851752B2 (ja) * 2000-03-27 2006-11-29 株式会社東芝 半導体装置の製造方法
US6492241B1 (en) * 2000-04-10 2002-12-10 Micron Technology, Inc. Integrated capacitors fabricated with conductive metal oxides
US20020036313A1 (en) * 2000-06-06 2002-03-28 Sam Yang Memory cell capacitor structure and method of formation
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
JP3624822B2 (ja) * 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
JP2003168749A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
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JP4360467B2 (ja) * 2003-11-20 2009-11-11 独立行政法人科学技術振興機構 強誘電体メソ結晶担持薄膜及びその製造方法
JP2005209712A (ja) * 2004-01-20 2005-08-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
KR100614803B1 (ko) * 2004-10-26 2006-08-22 삼성전자주식회사 커패시터 제조 방법
KR100653721B1 (ko) * 2005-06-30 2006-12-05 삼성전자주식회사 질소주입활성영역을 갖는 반도체소자 및 그 제조방법
KR100728959B1 (ko) * 2005-08-18 2007-06-15 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1615538A (zh) * 2002-01-15 2005-05-11 因芬尼昂技术股份公司 具改善阻障性质之阻障堆栈
CN1519916A (zh) * 2003-01-20 2004-08-11 �����ɷ� 制作dram的存储单元的方法

Also Published As

Publication number Publication date
US20090273058A1 (en) 2009-11-05
EP2016616A1 (en) 2009-01-21
CN101461037A (zh) 2009-06-17
KR20090020601A (ko) 2009-02-26
TWI365513B (en) 2012-06-01
KR101127741B1 (ko) 2012-03-26
US20070264838A1 (en) 2007-11-15
US7968969B2 (en) 2011-06-28
US7560392B2 (en) 2009-07-14
US20130258550A1 (en) 2013-10-03
JP5163965B2 (ja) 2013-03-13
WO2007133936A1 (en) 2007-11-22
US8987863B2 (en) 2015-03-24
TW200802727A (en) 2008-01-01
JP2009536791A (ja) 2009-10-15
US8450173B2 (en) 2013-05-28
US20110254129A1 (en) 2011-10-20

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