TWI365513B - Electrical components for microelectronic devices and methods of forming the same - Google Patents

Electrical components for microelectronic devices and methods of forming the same

Info

Publication number
TWI365513B
TWI365513B TW096116503A TW96116503A TWI365513B TW I365513 B TWI365513 B TW I365513B TW 096116503 A TW096116503 A TW 096116503A TW 96116503 A TW96116503 A TW 96116503A TW I365513 B TWI365513 B TW I365513B
Authority
TW
Taiwan
Prior art keywords
methods
forming
same
electrical components
microelectronic devices
Prior art date
Application number
TW096116503A
Other languages
English (en)
Other versions
TW200802727A (en
Inventor
Rishikesh Krishnan
Dan Gealy
Vidya Srividya
Noel Rocklein
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200802727A publication Critical patent/TW200802727A/zh
Application granted granted Critical
Publication of TWI365513B publication Critical patent/TWI365513B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/255—Means for correcting the capacitance value
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
TW096116503A 2006-05-10 2007-05-09 Electrical components for microelectronic devices and methods of forming the same TWI365513B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/431,958 US7560392B2 (en) 2006-05-10 2006-05-10 Electrical components for microelectronic devices and methods of forming the same

Publications (2)

Publication Number Publication Date
TW200802727A TW200802727A (en) 2008-01-01
TWI365513B true TWI365513B (en) 2012-06-01

Family

ID=38542006

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096116503A TWI365513B (en) 2006-05-10 2007-05-09 Electrical components for microelectronic devices and methods of forming the same

Country Status (7)

Country Link
US (4) US7560392B2 (zh)
EP (1) EP2016616A1 (zh)
JP (1) JP5163965B2 (zh)
KR (1) KR101127741B1 (zh)
CN (1) CN101461037B (zh)
TW (1) TWI365513B (zh)
WO (1) WO2007133936A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807582B2 (en) * 2006-03-06 2010-10-05 Micron Technology, Inc. Method of forming contacts for a memory device
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same
KR100919712B1 (ko) * 2007-06-27 2009-10-06 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
US8124528B2 (en) 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
KR20100079293A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 커패시터 및 그 제조 방법
US9159551B2 (en) * 2009-07-02 2015-10-13 Micron Technology, Inc. Methods of forming capacitors
JP2013021012A (ja) 2011-07-07 2013-01-31 Renesas Electronics Corp 半導体装置の製造方法
US9466660B2 (en) * 2013-10-16 2016-10-11 Micron Technology, Inc. Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
US10553673B2 (en) * 2017-12-27 2020-02-04 Micron Technology, Inc. Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor
CN111656511A (zh) 2018-04-04 2020-09-11 松下知识产权经营株式会社 电子设备
CN113299651B (zh) 2020-02-24 2023-06-16 长鑫存储技术有限公司 半导体结构制备方法和半导体结构

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JPH0218895A (ja) * 1988-07-04 1990-01-23 Murata Mfg Co Ltd 薄膜ｅｌ素子
JP2645811B2 (ja) * 1995-03-20 1997-08-25 エルジイ・セミコン・カンパニイ・リミテッド 拡散バリヤ機能を有する半導体素子の電極形成方法
US5668040A (en) * 1995-03-20 1997-09-16 Lg Semicon Co., Ltd. Method for forming a semiconductor device electrode which also serves as a diffusion barrier
JP3512959B2 (ja) * 1996-11-14 2004-03-31 株式会社東芝 半導体装置及びその製造方法
JPH11274419A (ja) * 1998-03-26 1999-10-08 Toshiba Corp 薄膜キャパシタ
KR100290895B1 (ko) * 1998-06-30 2001-07-12 김영환 반도체 소자의 커패시터 구조 및 이의 제조 방법
JP3768357B2 (ja) * 1998-12-01 2006-04-19 富士通株式会社 高誘電体キャパシタの製造方法
US6475854B2 (en) * 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
JP3851752B2 (ja) * 2000-03-27 2006-11-29 株式会社東芝 半導体装置の製造方法
US6492241B1 (en) * 2000-04-10 2002-12-10 Micron Technology, Inc. Integrated capacitors fabricated with conductive metal oxides
US20020036313A1 (en) * 2000-06-06 2002-03-28 Sam Yang Memory cell capacitor structure and method of formation
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
JP3624822B2 (ja) * 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
JP2003168749A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
US6787831B2 (en) * 2002-01-15 2004-09-07 Infineon Technologies Aktiengesellschaft Barrier stack with improved barrier properties
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices
CN1519916A (zh) * 2003-01-20 2004-08-11 联华电子股份有限公司 制作dram的存储单元的方法
JP4360467B2 (ja) * 2003-11-20 2009-11-11 独立行政法人科学技術振興機構 強誘電体メソ結晶担持薄膜及びその製造方法
JP2005209712A (ja) * 2004-01-20 2005-08-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
KR100614803B1 (ko) * 2004-10-26 2006-08-22 삼성전자주식회사 커패시터 제조 방법
KR100653721B1 (ko) * 2005-06-30 2006-12-05 삼성전자주식회사 질소주입활성영역을 갖는 반도체소자 및 그 제조방법
KR100728959B1 (ko) * 2005-08-18 2007-06-15 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
US7560392B2 (en) 2006-05-10 2009-07-14 Micron Technology, Inc. Electrical components for microelectronic devices and methods of forming the same

Also Published As

Publication number Publication date
EP2016616A1 (en) 2009-01-21
US8987863B2 (en) 2015-03-24
CN101461037B (zh) 2010-08-25
JP5163965B2 (ja) 2013-03-13
US20070264838A1 (en) 2007-11-15
US7560392B2 (en) 2009-07-14
US8450173B2 (en) 2013-05-28
CN101461037A (zh) 2009-06-17
US20110254129A1 (en) 2011-10-20
KR20090020601A (ko) 2009-02-26
US7968969B2 (en) 2011-06-28
US20090273058A1 (en) 2009-11-05
JP2009536791A (ja) 2009-10-15
KR101127741B1 (ko) 2012-03-26
TW200802727A (en) 2008-01-01
US20130258550A1 (en) 2013-10-03
WO2007133936A1 (en) 2007-11-22

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