CN101356629B - 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 - Google Patents

用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 Download PDF

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CN101356629B
CN101356629B CN2006800507306A CN200680050730A CN101356629B CN 101356629 B CN101356629 B CN 101356629B CN 2006800507306 A CN2006800507306 A CN 2006800507306A CN 200680050730 A CN200680050730 A CN 200680050730A CN 101356629 B CN101356629 B CN 101356629B
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acid
composition
ether
removal composition
microelectronic component
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CN101356629A (zh
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帕梅拉·M·维辛廷
江平
迈克尔·B·克赞斯基
麦肯齐·金
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Entegris Inc
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Advanced Technology Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
CN2006800507306A 2005-11-09 2006-11-09 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 Active CN101356629B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US73522505P 2005-11-09 2005-11-09
US60/735,225 2005-11-09
US76096906P 2006-01-20 2006-01-20
US60/760,969 2006-01-20
US80582606P 2006-06-26 2006-06-26
US60/805,826 2006-06-26
US82163106P 2006-08-07 2006-08-07
US60/821,631 2006-08-07
PCT/US2006/060696 WO2007111694A2 (en) 2005-11-09 2006-11-09 Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon

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CN101356629A CN101356629A (zh) 2009-01-28
CN101356629B true CN101356629B (zh) 2012-06-06

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US (2) US7960328B2 (enExample)
EP (1) EP1946358A4 (enExample)
JP (1) JP2009515055A (enExample)
KR (1) KR20080072905A (enExample)
CN (1) CN101356629B (enExample)
AU (1) AU2006340825A1 (enExample)
TW (1) TWI513799B (enExample)
WO (1) WO2007111694A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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