CN101266976B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101266976B
CN101266976B CN2008100926368A CN200810092636A CN101266976B CN 101266976 B CN101266976 B CN 101266976B CN 2008100926368 A CN2008100926368 A CN 2008100926368A CN 200810092636 A CN200810092636 A CN 200810092636A CN 101266976 B CN101266976 B CN 101266976B
Authority
CN
China
Prior art keywords
electrode
semiconductor device
reverse connection
intermediate potential
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2008100926368A
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English (en)
Chinese (zh)
Other versions
CN101266976A (zh
Inventor
高桥徹雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101266976A publication Critical patent/CN101266976A/zh
Application granted granted Critical
Publication of CN101266976B publication Critical patent/CN101266976B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2008100926368A 2004-01-29 2004-12-13 半导体器件 Expired - Lifetime CN101266976B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP021476/2004 2004-01-29
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004101011315A Division CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Publications (2)

Publication Number Publication Date
CN101266976A CN101266976A (zh) 2008-09-17
CN101266976B true CN101266976B (zh) 2010-06-16

Family

ID=34805615

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2008100926368A Expired - Lifetime CN101266976B (zh) 2004-01-29 2004-12-13 半导体器件
CN2009102063644A Expired - Lifetime CN101677099B (zh) 2004-01-29 2004-12-13 半导体器件
CNB2004101011315A Expired - Lifetime CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2009102063644A Expired - Lifetime CN101677099B (zh) 2004-01-29 2004-12-13 半导体器件
CNB2004101011315A Expired - Lifetime CN100394615C (zh) 2004-01-29 2004-12-13 半导体器件

Country Status (5)

Country Link
US (1) US7582918B2 (https=)
JP (1) JP4757449B2 (https=)
KR (2) KR100641864B1 (https=)
CN (3) CN101266976B (https=)
DE (1) DE102004059453B4 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
EP2357670B1 (en) 2008-12-10 2015-04-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN103871878B (zh) * 2012-12-10 2016-05-04 北大方正集团有限公司 一种在igbt管栅极下方形成厚场氧的方法
JP6083464B2 (ja) * 2013-03-14 2017-02-22 富士電機株式会社 半導体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014020089B4 (de) 2014-04-16 2026-04-23 Infineon Technologies Ag Vertikale halbleitervorrichtungen
JP6665478B2 (ja) * 2015-10-14 2020-03-13 富士電機株式会社 半導体装置
JP6627445B2 (ja) * 2015-11-16 2020-01-08 富士電機株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
JP6301551B1 (ja) * 2016-09-30 2018-03-28 新電元工業株式会社 半導体装置
JP6224291B1 (ja) * 2016-09-30 2017-11-01 新電元工業株式会社 半導体装置
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
CN107146812B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324971A (en) * 1992-04-09 1994-06-28 U.S. Philips Corporation Power semiconductor device having over voltage protection
CN1087504C (zh) * 1995-05-22 2002-07-10 财团法人半导体研究振兴会 高输出功率的高频静态感应晶体管
US6667515B2 (en) * 2001-01-26 2003-12-23 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194559A (ja) * 1989-01-23 1990-08-01 Fuji Electric Co Ltd 半導体装置
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
JP3331846B2 (ja) 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JP3906504B2 (ja) 1996-11-27 2007-04-18 株式会社デンソー 絶縁分離型半導体装置
JP3191747B2 (ja) 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
DE69938541D1 (de) * 1999-06-03 2008-05-29 St Microelectronics Srl Leistungshalbleiteranordnung mit einer Randabschlussstruktur mit einem Spannungsteiler
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置
EP1341238B1 (en) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324971A (en) * 1992-04-09 1994-06-28 U.S. Philips Corporation Power semiconductor device having over voltage protection
CN1087504C (zh) * 1995-05-22 2002-07-10 财团法人半导体研究振兴会 高输出功率的高频静态感应晶体管
US6667515B2 (en) * 2001-01-26 2003-12-23 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device

Also Published As

Publication number Publication date
CN101266976A (zh) 2008-09-17
CN100394615C (zh) 2008-06-11
JP2005217152A (ja) 2005-08-11
DE102004059453A1 (de) 2005-08-25
CN101677099A (zh) 2010-03-24
KR20060096399A (ko) 2006-09-11
JP4757449B2 (ja) 2011-08-24
DE102004059453B4 (de) 2010-04-08
US20050167694A1 (en) 2005-08-04
US7582918B2 (en) 2009-09-01
CN101677099B (zh) 2012-06-27
KR20050077742A (ko) 2005-08-03
CN1649169A (zh) 2005-08-03
KR100641864B1 (ko) 2006-11-03
KR100653324B1 (ko) 2006-12-05

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