DE102004059453B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE102004059453B4
DE102004059453B4 DE102004059453A DE102004059453A DE102004059453B4 DE 102004059453 B4 DE102004059453 B4 DE 102004059453B4 DE 102004059453 A DE102004059453 A DE 102004059453A DE 102004059453 A DE102004059453 A DE 102004059453A DE 102004059453 B4 DE102004059453 B4 DE 102004059453B4
Authority
DE
Germany
Prior art keywords
electrode
diode
semiconductor device
potential
rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102004059453A
Other languages
German (de)
English (en)
Other versions
DE102004059453A1 (de
Inventor
Tetsuo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102004059453A1 publication Critical patent/DE102004059453A1/de
Application granted granted Critical
Publication of DE102004059453B4 publication Critical patent/DE102004059453B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102004059453A 2004-01-29 2004-12-09 Halbleitervorrichtung Expired - Lifetime DE102004059453B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004/021476 2004-01-29
JP2004021476A JP4757449B2 (ja) 2004-01-29 2004-01-29 半導体装置

Publications (2)

Publication Number Publication Date
DE102004059453A1 DE102004059453A1 (de) 2005-08-25
DE102004059453B4 true DE102004059453B4 (de) 2010-04-08

Family

ID=34805615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004059453A Expired - Lifetime DE102004059453B4 (de) 2004-01-29 2004-12-09 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US7582918B2 (https=)
JP (1) JP4757449B2 (https=)
KR (2) KR100641864B1 (https=)
CN (3) CN101266976B (https=)
DE (1) DE102004059453B4 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100440505C (zh) * 2006-09-26 2008-12-03 无锡博创微电子有限公司 耗尽型终端保护结构
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
EP2357670B1 (en) 2008-12-10 2015-04-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
FR2981200B1 (fr) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) Cellule monolithique de circuit integre et notamment cellule de commutation monolithique
CN103871878B (zh) * 2012-12-10 2016-05-04 北大方正集团有限公司 一种在igbt管栅极下方形成厚场氧的方法
JP6083464B2 (ja) * 2013-03-14 2017-02-22 富士電機株式会社 半導体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
DE102014020089B4 (de) 2014-04-16 2026-04-23 Infineon Technologies Ag Vertikale halbleitervorrichtungen
JP6665478B2 (ja) * 2015-10-14 2020-03-13 富士電機株式会社 半導体装置
JP6627445B2 (ja) * 2015-11-16 2020-01-08 富士電機株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
JP6258561B1 (ja) * 2016-05-26 2018-01-10 新電元工業株式会社 半導体装置
JP6301551B1 (ja) * 2016-09-30 2018-03-28 新電元工業株式会社 半導体装置
JP6224291B1 (ja) * 2016-09-30 2017-11-01 新電元工業株式会社 半導体装置
JP6828472B2 (ja) * 2017-02-01 2021-02-10 富士電機株式会社 半導体装置
CN107146812B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 增强型栅场板GaN基电流孔径异质结场效应器件及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324971A (en) * 1992-04-09 1994-06-28 U.S. Philips Corporation Power semiconductor device having over voltage protection
JPH10163482A (ja) * 1996-11-27 1998-06-19 Denso Corp 絶縁分離型半導体装置
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
JP3331846B2 (ja) * 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194559A (ja) * 1989-01-23 1990-08-01 Fuji Electric Co Ltd 半導体装置
JPH07169952A (ja) * 1993-12-14 1995-07-04 Fuji Electric Co Ltd 半導体装置
US5663582A (en) * 1995-05-22 1997-09-02 Zaidan Hojin Handotai Kenkyu Shinkokai High frequency static induction transistor having high output
JPH11243200A (ja) 1998-02-26 1999-09-07 Toshiba Corp 半導体装置
DE69938541D1 (de) * 1999-06-03 2008-05-29 St Microelectronics Srl Leistungshalbleiteranordnung mit einer Randabschlussstruktur mit einem Spannungsteiler
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置
JP4696356B2 (ja) * 2000-12-14 2011-06-08 株式会社デンソー 半導体装置
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP2002270742A (ja) 2001-03-12 2002-09-20 Unisia Jecs Corp 半導体装置
JP4140232B2 (ja) * 2001-12-07 2008-08-27 株式会社デンソー 半導体装置
EP1341238B1 (en) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324971A (en) * 1992-04-09 1994-06-28 U.S. Philips Corporation Power semiconductor device having over voltage protection
JP3331846B2 (ja) * 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JPH10163482A (ja) * 1996-11-27 1998-06-19 Denso Corp 絶縁分離型半導体装置
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
US6614088B1 (en) * 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
JP2003188381A (ja) * 2001-12-21 2003-07-04 Denso Corp 半導体装置

Also Published As

Publication number Publication date
CN101266976A (zh) 2008-09-17
CN100394615C (zh) 2008-06-11
JP2005217152A (ja) 2005-08-11
DE102004059453A1 (de) 2005-08-25
CN101677099A (zh) 2010-03-24
CN101266976B (zh) 2010-06-16
KR20060096399A (ko) 2006-09-11
JP4757449B2 (ja) 2011-08-24
US20050167694A1 (en) 2005-08-04
US7582918B2 (en) 2009-09-01
CN101677099B (zh) 2012-06-27
KR20050077742A (ko) 2005-08-03
CN1649169A (zh) 2005-08-03
KR100641864B1 (ko) 2006-11-03
KR100653324B1 (ko) 2006-12-05

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