CN101230488B - 磷化铟单晶的制造方法 - Google Patents

磷化铟单晶的制造方法 Download PDF

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Publication number
CN101230488B
CN101230488B CN2007101634220A CN200710163422A CN101230488B CN 101230488 B CN101230488 B CN 101230488B CN 2007101634220 A CN2007101634220 A CN 2007101634220A CN 200710163422 A CN200710163422 A CN 200710163422A CN 101230488 B CN101230488 B CN 101230488B
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crystal
indium phosphide
doping agent
manufacturing
growth
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CN101230488A (zh
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川瀬智博
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2007101634220A 2003-05-07 2004-05-06 磷化铟单晶的制造方法 Expired - Lifetime CN101230488B (zh)

Applications Claiming Priority (3)

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JP2003-128831 2003-05-07
JP2003128831 2003-05-07
JP2003128831 2003-05-07

Related Parent Applications (1)

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CNB2004800122060A Division CN100378257C (zh) 2003-05-07 2004-05-06 磷化铟基板、磷化铟单晶及其制造方法

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CN101230488A CN101230488A (zh) 2008-07-30
CN101230488B true CN101230488B (zh) 2011-12-21

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CN2007101634220A Expired - Lifetime CN101230488B (zh) 2003-05-07 2004-05-06 磷化铟单晶的制造方法
CNB2004800122060A Expired - Lifetime CN100378257C (zh) 2003-05-07 2004-05-06 磷化铟基板、磷化铟单晶及其制造方法
CN2008100052265A Expired - Lifetime CN101307500B (zh) 2003-05-07 2004-05-06 含有掺杂剂的磷化铟单晶及其制造方法

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CNB2004800122060A Expired - Lifetime CN100378257C (zh) 2003-05-07 2004-05-06 磷化铟基板、磷化铟单晶及其制造方法
CN2008100052265A Expired - Lifetime CN101307500B (zh) 2003-05-07 2004-05-06 含有掺杂剂的磷化铟单晶及其制造方法

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US (1) US7442355B2 (https=)
EP (1) EP1634981B1 (https=)
JP (3) JP5233070B2 (https=)
KR (1) KR101030099B1 (https=)
CN (3) CN101230488B (https=)
CA (1) CA2519885A1 (https=)
WO (1) WO2004106597A1 (https=)

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JP4830312B2 (ja) * 2005-02-22 2011-12-07 住友電気工業株式会社 化合物半導体単結晶とその製造方法
TWI402896B (zh) * 2006-02-02 2013-07-21 Nippon Mining Co Substrate semiconductor growth substrate and epitaxial growth method
CN101405440B (zh) * 2006-03-24 2012-05-30 日本碍子株式会社 氮化物单晶的制造方法及其装置
CN100415953C (zh) * 2006-12-07 2008-09-03 上海交通大学 单晶InP方形纳米孔阵列的制备方法
JP2008288284A (ja) * 2007-05-15 2008-11-27 Sumitomo Electric Ind Ltd 半導体光素子及びその製造方法
CN102363897A (zh) * 2011-11-07 2012-02-29 上海应用技术学院 一种pbn坩埚及利用其进行砷化镓晶体生长的方法
US9140481B2 (en) 2012-04-02 2015-09-22 Whirlpool Corporation Folded vacuum insulated structure
CN102602902A (zh) * 2012-04-23 2012-07-25 南京金美镓业有限公司 一种用于磷化铟制备的高压炉
CN104047055B (zh) * 2013-03-12 2018-08-17 台山市华兴光电科技有限公司 一种n型磷化铟单晶生长制备配方
WO2014156596A1 (ja) 2013-03-26 2014-10-02 Jx日鉱日石金属株式会社 化合物半導体ウエハ、光電変換素子、およびｉｉｉ－ｖ族化合物半導体単結晶の製造方法
US20160380137A1 (en) * 2013-11-27 2016-12-29 Sumitomo Electric Industries, Ltd. Light-receiving device
CN104695013A (zh) * 2013-12-04 2015-06-10 青岛润鑫伟业科贸有限公司 一种磷化铟多晶无液封合成装置
JP6503642B2 (ja) * 2014-06-09 2019-04-24 住友電気工業株式会社 結晶成長用坩堝
CN105779976B (zh) * 2016-05-10 2018-03-16 中国环境科学研究院 实验室条件下燃烧反应器的氧化硼镀膜方法
CN106400102B (zh) * 2016-10-26 2019-06-28 珠海鼎泰芯源晶体有限公司 一种可实现单晶在线退火的生长设备及其方法
WO2018179567A1 (ja) 2017-03-31 2018-10-04 Ｊｘ金属株式会社 化合物半導体および化合物半導体単結晶の製造方法
CN107313110B (zh) * 2017-06-27 2020-06-09 台山市华兴光电科技有限公司 一种p型磷化铟单晶制备配方及制备方法
JP6439898B1 (ja) * 2017-07-04 2018-12-19 住友電気工業株式会社 リン化インジウム単結晶体およびリン化インジウム単結晶基板
JP6512369B1 (ja) 2017-09-21 2019-05-15 住友電気工業株式会社 半絶縁性化合物半導体基板および半絶縁性化合物半導体単結晶
US11456363B2 (en) * 2018-02-23 2022-09-27 Sumitomo Electric Industries, Ltd. Indium phosphide crystal substrate
DE102019208389A1 (de) 2019-06-07 2020-12-10 Freiberger Compound Materials Gmbh Verfahren zur Herstellung von Restspannungs- und versetzungsfreien AIII-BV-Substratwafern
EP4110975A4 (en) * 2020-02-28 2024-02-28 Axt, Inc. LOW ETCH PIT DENSITY, LOW SLIDER LINE DENSITY AND LOW INDIUM PHOSPHIDE LOAD
JP7046242B1 (ja) 2021-02-02 2022-04-01 Ｊｘ金属株式会社 リン化インジウム単結晶インゴットの製造方法及びリン化インジウム基板の製造方法
CN113638048B (zh) * 2021-07-15 2022-07-15 云南鑫耀半导体材料有限公司 一种vgf法生长磷化铟单晶的方法
WO2023209867A1 (ja) 2022-04-27 2023-11-02 住友電気工業株式会社 Ｉｉｉ－ｖ族化合物半導体単結晶基板およびその製造方法
CN114990697B (zh) * 2022-05-10 2023-12-12 云南鑫耀半导体材料有限公司 磷化铟单晶回料采用vgf或vb法再次生长单晶的装料方法
DE102023200457A1 (de) 2023-01-20 2024-07-25 Freiberger Compound Materials Gesellschaft mit beschränkter Haftung Vorrichtung und Verfahren zur Herstellung von AIII-BV-Verbindungshalbleiter-Einkristallen sowie AIII-BV-Verbindungshalbleiter-Einkristall und -Wafer
WO2025126447A1 (ja) * 2023-12-15 2025-06-19 住友電気工業株式会社 リン化インジウム単結晶基板、リン化インジウム単結晶、およびリン化インジウム単結晶の製造方法
CN120443344A (zh) * 2024-02-08 2025-08-08 北京通美晶体技术股份有限公司 含有硫和锡的磷化铟晶体、单晶片及其制备方法和器件

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JPH0340987A (ja) 1989-07-10 1991-02-21 Nippon Telegr & Teleph Corp <Ntt> 単結晶育成方法

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Also Published As

Publication number Publication date
EP1634981B1 (en) 2020-06-24
JP2012236770A (ja) 2012-12-06
JP5233070B2 (ja) 2013-07-10
JPWO2004106597A1 (ja) 2006-07-20
KR101030099B1 (ko) 2011-04-20
CN100378257C (zh) 2008-04-02
CA2519885A1 (en) 2004-12-09
US20070101924A1 (en) 2007-05-10
WO2004106597A1 (ja) 2004-12-09
EP1634981A1 (en) 2006-03-15
US7442355B2 (en) 2008-10-28
CN1784514A (zh) 2006-06-07
KR20060009304A (ko) 2006-01-31
EP1634981A4 (en) 2011-09-07
JP5768785B2 (ja) 2015-08-26
CN101230488A (zh) 2008-07-30
CN101307500B (zh) 2013-02-13
JP2015129091A (ja) 2015-07-16
CN101307500A (zh) 2008-11-19

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