CN101060085A - 形成场效应晶体管的方法 - Google Patents
形成场效应晶体管的方法 Download PDFInfo
- Publication number
- CN101060085A CN101060085A CNA2007100916319A CN200710091631A CN101060085A CN 101060085 A CN101060085 A CN 101060085A CN A2007100916319 A CNA2007100916319 A CN A2007100916319A CN 200710091631 A CN200710091631 A CN 200710091631A CN 101060085 A CN101060085 A CN 101060085A
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- 238000000034 method Methods 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 97
- 239000011241 protective layer Substances 0.000 claims description 64
- 238000002347 injection Methods 0.000 claims description 42
- 239000007924 injection Substances 0.000 claims description 42
- 230000005669 field effect Effects 0.000 claims description 36
- 238000002425 crystallisation Methods 0.000 claims description 19
- 230000008025 crystallization Effects 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 238000010884 ion-beam technique Methods 0.000 abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 22
- 229920005591 polysilicon Polymers 0.000 abstract description 22
- 238000005468 ion implantation Methods 0.000 abstract description 10
- 238000001953 recrystallisation Methods 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 abstract 2
- 238000005280 amorphization Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 56
- 229940090044 injection Drugs 0.000 description 36
- 239000000758 substrate Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000007799 cork Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/379,581 | 2006-04-21 | ||
US11/379,581 US7341902B2 (en) | 2006-04-21 | 2006-04-21 | Finfet/trigate stress-memorization method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101060085A true CN101060085A (zh) | 2007-10-24 |
CN100505188C CN100505188C (zh) | 2009-06-24 |
Family
ID=38619987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100916319A Expired - Fee Related CN100505188C (zh) | 2006-04-21 | 2007-04-03 | 形成场效应晶体管的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7341902B2 (zh) |
CN (1) | CN100505188C (zh) |
TW (1) | TW200807568A (zh) |
Cited By (15)
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CN101969047A (zh) * | 2010-08-12 | 2011-02-09 | 电子科技大学 | 用于制备应变沟道cmos的等效应变记忆方法 |
CN102130008A (zh) * | 2010-01-19 | 2011-07-20 | 台湾积体电路制造股份有限公司 | 半导体元件的制造方法 |
CN102244098A (zh) * | 2010-05-14 | 2011-11-16 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
WO2012094783A1 (zh) * | 2011-01-14 | 2012-07-19 | 中国科学院微电子研究所 | 向沟道中引入应变的方法和使用该方法制作的器件 |
CN102612737A (zh) * | 2009-12-23 | 2012-07-25 | 英特尔公司 | 通过使用离子注入引入压缩金属栅极应力而在三栅极mosfet中实现驱动电流增强 |
CN102983104A (zh) * | 2011-09-07 | 2013-03-20 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管的制作方法 |
CN103021827A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管、cmos鳍式场效应管的形成方法 |
CN103247537A (zh) * | 2012-02-06 | 2013-08-14 | 国际商业机器公司 | 制造鳍片器件的方法和鳍片器件 |
CN103779281A (zh) * | 2012-10-19 | 2014-05-07 | 德州仪器公司 | 制作晶体管的方法 |
CN103839822A (zh) * | 2012-11-27 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
US8748272B2 (en) | 2011-01-14 | 2014-06-10 | Institute of Microelectronics, Chinese Academy of Sciences | Method of introducing strain into channel and device manufactured by using the method |
CN105320791A (zh) * | 2014-06-04 | 2016-02-10 | 联华电子股份有限公司 | 平面设计至非平面设计的转换方法 |
CN105784743A (zh) * | 2014-12-24 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 栅氧化层失效分析方法 |
CN109427871A (zh) * | 2017-08-29 | 2019-03-05 | 三星电子株式会社 | 半导体装置 |
CN109599338A (zh) * | 2017-09-30 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Families Citing this family (32)
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US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7678630B2 (en) * | 2006-02-15 | 2010-03-16 | Infineon Technologies Ag | Strained semiconductor device and method of making same |
EP1892765A1 (en) * | 2006-08-23 | 2008-02-27 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for doping a fin-based semiconductor device |
JP2009054705A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 半導体基板、半導体装置およびその製造方法 |
US7902005B2 (en) * | 2007-11-02 | 2011-03-08 | Infineon Technologies Ag | Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure |
US20090152626A1 (en) * | 2007-12-18 | 2009-06-18 | Texas Instruments Incorporated | Super Halo Formation Using a Reverse Flow for Halo Implants |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
US8124487B2 (en) * | 2008-12-22 | 2012-02-28 | Varian Semiconductor Equipment Associates, Inc. | Method for enhancing tensile stress and source/drain activation using Si:C |
US8969969B2 (en) * | 2009-03-20 | 2015-03-03 | International Business Machines Corporation | High threshold voltage NMOS transistors for low power IC technology |
US8039349B2 (en) * | 2009-07-30 | 2011-10-18 | Globalfoundries Inc. | Methods for fabricating non-planar semiconductor devices having stress memory |
US9461169B2 (en) | 2010-05-28 | 2016-10-04 | Globalfoundries Inc. | Device and method for fabricating thin semiconductor channel and buried strain memorization layer |
US8551845B2 (en) | 2010-09-21 | 2013-10-08 | International Business Machines Corporation | Structure and method for increasing strain in a device |
JP5271372B2 (ja) * | 2011-03-18 | 2013-08-21 | 株式会社東芝 | 半導体装置の製造方法 |
US20130237026A1 (en) | 2012-03-09 | 2013-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Finfet device having a strained region |
CN103515231B (zh) * | 2012-06-20 | 2016-12-07 | 中芯国际集成电路制造(上海)有限公司 | FinFET制造方法 |
EP2741320B1 (en) | 2012-12-05 | 2020-06-17 | IMEC vzw | Manufacturing method of a finfet device with dual-strained channels |
DE102013106539B4 (de) * | 2013-03-12 | 2020-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Verfahren zur Verifikation eines Layouts für Polysilizium-Zellrandstrukturen in FinFET-Standardzellen |
CN104517839A (zh) * | 2013-09-27 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | 一种鳍形场效晶体管结构及其制作方法 |
US9252271B2 (en) * | 2013-11-27 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of making |
US9373512B2 (en) | 2013-12-03 | 2016-06-21 | GlobalFoundries, Inc. | Apparatus and method for laser heating and ion implantation |
JP6361180B2 (ja) * | 2014-03-10 | 2018-07-25 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
CN105097536A (zh) * | 2014-05-12 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
US9577100B2 (en) | 2014-06-16 | 2017-02-21 | Globalfoundries Inc. | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
CN104900528B (zh) * | 2015-04-13 | 2018-06-22 | 上海华力微电子有限公司 | 一种利用应力记忆技术制造FinFET结构的方法 |
US9431521B1 (en) | 2015-09-18 | 2016-08-30 | International Business Machines Corporation | Stress memorization technique for strain coupling enhancement in bulk finFET device |
US11869890B2 (en) | 2017-12-26 | 2024-01-09 | Intel Corporation | Stacked transistors with contact last |
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WO2019172879A1 (en) | 2018-03-05 | 2019-09-12 | Intel Corporation | Metallization structures for stacked device connectivity and their methods of fabrication |
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US11450571B2 (en) * | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for manufacturing semiconductor structure |
Family Cites Families (9)
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US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
US6593181B2 (en) | 2001-04-20 | 2003-07-15 | International Business Machines Corporation | Tailored insulator properties for devices |
JP2003229568A (ja) | 2002-02-04 | 2003-08-15 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
CN1320641C (zh) * | 2002-12-19 | 2007-06-06 | 国际商业机器公司 | 形成隔离层的方法和鳍片场效应晶体管 |
US6774015B1 (en) * | 2002-12-19 | 2004-08-10 | International Business Machines Corporation | Strained silicon-on-insulator (SSOI) and method to form the same |
KR100521382B1 (ko) * | 2003-06-30 | 2005-10-12 | 삼성전자주식회사 | 핀 전계효과 트랜지스터 제조 방법 |
US6916694B2 (en) * | 2003-08-28 | 2005-07-12 | International Business Machines Corporation | Strained silicon-channel MOSFET using a damascene gate process |
US6951783B2 (en) * | 2003-10-28 | 2005-10-04 | Freescale Semiconductor, Inc. | Confined spacers for double gate transistor semiconductor fabrication process |
US8008724B2 (en) | 2003-10-30 | 2011-08-30 | International Business Machines Corporation | Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers |
-
2006
- 2006-04-21 US US11/379,581 patent/US7341902B2/en not_active Expired - Fee Related
-
2007
- 2007-04-03 CN CNB2007100916319A patent/CN100505188C/zh not_active Expired - Fee Related
- 2007-04-11 TW TW096112636A patent/TW200807568A/zh unknown
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102612737A (zh) * | 2009-12-23 | 2012-07-25 | 英特尔公司 | 通过使用离子注入引入压缩金属栅极应力而在三栅极mosfet中实现驱动电流增强 |
CN102612737B (zh) * | 2009-12-23 | 2015-12-09 | 英特尔公司 | 通过使用离子注入引入压缩金属栅极应力而在三栅极mosfet中实现驱动电流增强 |
CN102130008A (zh) * | 2010-01-19 | 2011-07-20 | 台湾积体电路制造股份有限公司 | 半导体元件的制造方法 |
CN102130008B (zh) * | 2010-01-19 | 2013-01-09 | 台湾积体电路制造股份有限公司 | 半导体元件的制造方法 |
CN102244098A (zh) * | 2010-05-14 | 2011-11-16 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
CN102244098B (zh) * | 2010-05-14 | 2014-07-30 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
CN101969047A (zh) * | 2010-08-12 | 2011-02-09 | 电子科技大学 | 用于制备应变沟道cmos的等效应变记忆方法 |
CN101969047B (zh) * | 2010-08-12 | 2014-02-12 | 电子科技大学 | 用于制备应变沟道cmos的等效应变记忆方法 |
US8748272B2 (en) | 2011-01-14 | 2014-06-10 | Institute of Microelectronics, Chinese Academy of Sciences | Method of introducing strain into channel and device manufactured by using the method |
WO2012094783A1 (zh) * | 2011-01-14 | 2012-07-19 | 中国科学院微电子研究所 | 向沟道中引入应变的方法和使用该方法制作的器件 |
CN102983104A (zh) * | 2011-09-07 | 2013-03-20 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管的制作方法 |
CN102983104B (zh) * | 2011-09-07 | 2015-10-21 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管的制作方法 |
CN103021827A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管、cmos鳍式场效应管的形成方法 |
CN103247537B (zh) * | 2012-02-06 | 2016-03-23 | 国际商业机器公司 | 制造鳍片器件的方法和鳍片器件 |
CN103247537A (zh) * | 2012-02-06 | 2013-08-14 | 国际商业机器公司 | 制造鳍片器件的方法和鳍片器件 |
CN103779281A (zh) * | 2012-10-19 | 2014-05-07 | 德州仪器公司 | 制作晶体管的方法 |
CN103839822A (zh) * | 2012-11-27 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
CN103839822B (zh) * | 2012-11-27 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
CN105320791A (zh) * | 2014-06-04 | 2016-02-10 | 联华电子股份有限公司 | 平面设计至非平面设计的转换方法 |
CN105320791B (zh) * | 2014-06-04 | 2019-12-10 | 联华电子股份有限公司 | 平面设计至非平面设计的转换方法 |
CN105784743A (zh) * | 2014-12-24 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | 栅氧化层失效分析方法 |
CN105784743B (zh) * | 2014-12-24 | 2019-02-15 | 中芯国际集成电路制造(上海)有限公司 | 栅氧化层失效分析方法 |
CN109427871A (zh) * | 2017-08-29 | 2019-03-05 | 三星电子株式会社 | 半导体装置 |
US11908952B2 (en) | 2017-08-29 | 2024-02-20 | Samsung Electronics Co., Ltd. | Semiconductor devices and manufacturing methods thereof |
CN109427871B (zh) * | 2017-08-29 | 2024-05-31 | 三星电子株式会社 | 半导体装置 |
CN109599338A (zh) * | 2017-09-30 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
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US20070249130A1 (en) | 2007-10-25 |
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