CN100448031C - 底栅极薄膜晶体管、具有其的平板显示器及其制备方法 - Google Patents
底栅极薄膜晶体管、具有其的平板显示器及其制备方法 Download PDFInfo
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- CN100448031C CN100448031C CNB2005101068479A CN200510106847A CN100448031C CN 100448031 C CN100448031 C CN 100448031C CN B2005101068479 A CNB2005101068479 A CN B2005101068479A CN 200510106847 A CN200510106847 A CN 200510106847A CN 100448031 C CN100448031 C CN 100448031C
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
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- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 26
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR79693/04 | 2004-10-06 | ||
KR1020040079693A KR100659759B1 (ko) | 2004-10-06 | 2004-10-06 | 바텀 게이트형 박막트랜지스터, 그를 구비하는평판표시장치 및 박막트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1761074A CN1761074A (zh) | 2006-04-19 |
CN100448031C true CN100448031C (zh) | 2008-12-31 |
Family
ID=36124650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101068479A Expired - Fee Related CN100448031C (zh) | 2004-10-06 | 2005-09-26 | 底栅极薄膜晶体管、具有其的平板显示器及其制备方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7709840B2 (zh) |
JP (1) | JP4130666B2 (zh) |
KR (1) | KR100659759B1 (zh) |
CN (1) | CN100448031C (zh) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100841371B1 (ko) * | 2006-12-19 | 2008-06-26 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
WO2009034953A1 (ja) * | 2007-09-10 | 2009-03-19 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタ |
WO2009063648A1 (ja) | 2007-11-14 | 2009-05-22 | Panasonic Corporation | 薄膜トランジスタ、その製造方法および薄膜トランジスタを用いた電子機器 |
KR100934328B1 (ko) * | 2007-12-05 | 2009-12-29 | 재단법인서울대학교산학협력재단 | 하부 게이트를 갖는 다결정 실리콘 박막 트랜지스터 및 그제조방법 |
KR100965260B1 (ko) * | 2008-01-25 | 2010-06-22 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
JP5318865B2 (ja) | 2008-05-29 | 2013-10-16 | パナソニック株式会社 | 薄膜トランジスタと、その製造方法と、薄膜トランジスタを用いた電子機器 |
US9269573B2 (en) * | 2008-09-17 | 2016-02-23 | Idemitsu Kosan Co., Ltd. | Thin film transistor having crystalline indium oxide semiconductor film |
KR101534009B1 (ko) * | 2008-10-21 | 2015-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치 |
JP5384088B2 (ja) * | 2008-11-28 | 2014-01-08 | 株式会社ジャパンディスプレイ | 表示装置 |
KR101594471B1 (ko) | 2009-02-10 | 2016-02-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101041144B1 (ko) * | 2009-08-13 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
KR101649732B1 (ko) * | 2009-12-10 | 2016-08-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101117643B1 (ko) * | 2010-04-08 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 비정질 실리콘막의 결정화 방법, 그리고 박막 트랜지스터 및 이의 제조 방법 |
KR101182232B1 (ko) | 2010-06-30 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
KR101774256B1 (ko) * | 2010-11-15 | 2017-09-05 | 삼성디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 그 제조 방법 |
CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
KR101903565B1 (ko) | 2011-10-13 | 2018-10-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
JP5681809B2 (ja) * | 2011-10-20 | 2015-03-11 | パナソニック株式会社 | 薄膜トランジスタ装置及びその製造方法 |
TWI473317B (zh) * | 2011-11-17 | 2015-02-11 | Au Optronics Corp | 可撓性主動元件陣列基板以及有機電激發光元件 |
KR101375846B1 (ko) * | 2012-04-10 | 2014-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그 제조방법 |
CN102842619B (zh) * | 2012-09-03 | 2016-08-03 | 南京中电熊猫液晶显示科技有限公司 | 一种半导体装置及其制造方法 |
CN103021866A (zh) * | 2012-12-19 | 2013-04-03 | 青岛意捷通信技术有限公司 | 底栅结构的单掩模自组装ito薄膜晶体管的制备工艺 |
CN103021871A (zh) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | 一种薄膜晶体管的制备工艺 |
TWI621270B (zh) * | 2013-02-07 | 2018-04-11 | 群創光電股份有限公司 | 薄膜電晶體元件與薄膜電晶體顯示裝置 |
CN103985761B (zh) * | 2013-02-07 | 2017-04-12 | 群创光电股份有限公司 | 薄膜晶体管元件与薄膜晶体管显示装置 |
KR102130139B1 (ko) | 2013-07-30 | 2020-07-03 | 엘지디스플레이 주식회사 | 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법 |
JP2015065202A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法 |
CN103715270B (zh) * | 2013-12-31 | 2016-03-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、显示器件 |
CN103972110B (zh) * | 2014-04-22 | 2016-02-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN104392928A (zh) * | 2014-11-20 | 2015-03-04 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制造方法 |
WO2017071662A1 (zh) * | 2015-10-29 | 2017-05-04 | 陆磊 | 一种薄膜晶体管及制造方法和显示器面板 |
US20190140102A1 (en) * | 2016-04-25 | 2019-05-09 | Sakai Display Products Corporation | Thin film transistor, display device, and thin film transistor manufacturing method |
US9793156B1 (en) * | 2016-09-12 | 2017-10-17 | International Business Machines Corporation | Self-aligned low resistance metallic interconnect structures |
CN107221552A (zh) * | 2017-05-25 | 2017-09-29 | 深圳市华星光电技术有限公司 | Toc型oled显示器的制作方法及toc型oled显示器 |
CN207165572U (zh) * | 2017-09-12 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
WO2019132894A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Self-aligned source electrode and drain electrode for thin film transistors |
CN110993697B (zh) * | 2019-11-28 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制造方法、显示面板 |
CN115548030A (zh) * | 2022-09-30 | 2022-12-30 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
Citations (4)
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---|---|---|---|---|
CN1351371A (zh) * | 2000-10-31 | 2002-05-29 | 朱承基 | 含多晶有源层的薄膜晶体管及其制造方法 |
CN1377020A (zh) * | 2001-03-26 | 2002-10-30 | Lg.菲利浦Lcd株式会社 | 液晶显示器及其装配方法 |
CN1454030A (zh) * | 2002-04-25 | 2003-11-05 | Lg.菲利浦Lcd株式会社 | 有机电致发光显示器件 |
CN1476282A (zh) * | 2002-07-05 | 2004-02-18 | Lg.������Lcd��ʽ���� | 有机电致发光显示装置及其制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4115584B2 (ja) | 1998-03-27 | 2008-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6278130B1 (en) * | 1998-05-08 | 2001-08-21 | Seung-Ki Joo | Liquid crystal display and fabricating method thereof |
KR100317640B1 (ko) | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
CN1263159C (zh) * | 1999-06-02 | 2006-07-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
KR100426210B1 (ko) * | 2000-11-11 | 2004-04-03 | 피티플러스(주) | 실리콘 박막 결정화 방법 |
KR20020057382A (ko) * | 2001-01-04 | 2002-07-11 | 주승기 | 반도체 소자 제조 방법 및 장치 |
KR100378259B1 (ko) * | 2001-01-20 | 2003-03-29 | 주승기 | 결정질 활성층을 포함하는 박막트랜지스터 제작 방법 및장치 |
KR100390523B1 (ko) * | 2001-01-20 | 2003-07-04 | 주승기 | 실리콘 박막 결정화 방법 |
KR20020076791A (ko) * | 2001-03-30 | 2002-10-11 | 주승기 | 실리콘 박막의 결정화 방법 및 이를 이용한박막트랜지스터 제조 방법 |
US6695955B2 (en) * | 2001-05-25 | 2004-02-24 | Lg.Philips Lcd Co., Ltd. | Method of forming polycrystalline silicon for liquid crystal display device |
KR100458710B1 (ko) * | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
KR100458714B1 (ko) * | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
KR100493378B1 (ko) * | 2001-12-08 | 2005-06-07 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막트랜지스터의 제조 방법 |
KR100496287B1 (ko) * | 2002-08-03 | 2005-06-20 | 삼성에스디아이 주식회사 | 실리콘 박막의 결정화 방법, 이를 이용한 박막 트랜지스터및 상기 박막 트랜지스터를 구비한 평판 디스플레이 소자 |
KR100955772B1 (ko) * | 2003-06-20 | 2010-04-30 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR100570974B1 (ko) * | 2003-06-25 | 2006-04-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 |
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2004
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- 2005-09-21 US US11/232,290 patent/US7709840B2/en active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1351371A (zh) * | 2000-10-31 | 2002-05-29 | 朱承基 | 含多晶有源层的薄膜晶体管及其制造方法 |
CN1377020A (zh) * | 2001-03-26 | 2002-10-30 | Lg.菲利浦Lcd株式会社 | 液晶显示器及其装配方法 |
CN1454030A (zh) * | 2002-04-25 | 2003-11-05 | Lg.菲利浦Lcd株式会社 | 有机电致发光显示器件 |
CN1476282A (zh) * | 2002-07-05 | 2004-02-18 | Lg.������Lcd��ʽ���� | 有机电致发光显示装置及其制造方法 |
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US7923736B2 (en) | 2011-04-12 |
JP2006108623A (ja) | 2006-04-20 |
US7709840B2 (en) | 2010-05-04 |
US20100193779A1 (en) | 2010-08-05 |
JP4130666B2 (ja) | 2008-08-06 |
US20060071211A1 (en) | 2006-04-06 |
KR20060030816A (ko) | 2006-04-11 |
CN1761074A (zh) | 2006-04-19 |
KR100659759B1 (ko) | 2006-12-19 |
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