JP4130666B2 - ボトムゲート型薄膜トランジスタ、それを備える平板表示装置及び薄膜トランジスタの製造方法 - Google Patents
ボトムゲート型薄膜トランジスタ、それを備える平板表示装置及び薄膜トランジスタの製造方法 Download PDFInfo
- Publication number
- JP4130666B2 JP4130666B2 JP2005151498A JP2005151498A JP4130666B2 JP 4130666 B2 JP4130666 B2 JP 4130666B2 JP 2005151498 A JP2005151498 A JP 2005151498A JP 2005151498 A JP2005151498 A JP 2005151498A JP 4130666 B2 JP4130666 B2 JP 4130666B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- source
- region
- gate electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 109
- 239000010408 film Substances 0.000 claims description 107
- 239000004065 semiconductor Substances 0.000 claims description 92
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000002425 crystallisation Methods 0.000 claims description 30
- 230000008025 crystallization Effects 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 230000001939 inductive effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000002346 layers by function Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000005530 etching Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001485447 Micarea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
Description
120 半導体層
120a 導電性MIC領域
120b MILC領域
125 層間絶縁膜
125a ソース/ドレインコンタクトホール
130 結晶化誘導金属膜
Claims (13)
- 基板上に位置するゲート電極と、
前記ゲート電極上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置して前記ゲート電極を横切る半導体層と、
前記半導体層上に位置し、前記半導体層のエッジらのうち前記ゲート電極を横切る少なくとも一つのエッジから離隔して前記半導体層の一部の領域を露出させるソース/ドレインコンタクトホールを有する層間絶縁膜と、
前記半導体層の前記ソース/ドレインコンタクトホール内に露出した領域上に位置するソース/ドレイン電極と、を含み、
前記半導体層は、前記ソース/ドレインコンタクトホール内に露出した領域に対応する導電性のMIC領域、及び、前記MIC領域間のMILC領域を備えることを特徴とする薄膜トランジスタ。 - 前記ソース/ドレイン電極は、前記半導体層の露出した領域と直接的に接触することを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ソース/ドレインコンタクトホールは、前記半導体層のエッジらのうち前記ゲート電極を横切るすべてのエッジから離隔したことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ソース/ドレインコンタクトホールが前記ゲート電極を横切る半導体層のエッジから離隔した間隔は、0.5から10μmであることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記層間絶縁膜は、1000から5000Åの厚さを有することを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板上に位置するゲート電極と、
前記ゲート電極上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置して前記ゲート電極を横切る半導体層と、
前記半導体層上に位置し、前記半導体層のエッジらのうち前記ゲート電極を横切る少なくとも一つのエッジから離隔して前記半導体層の一部の領域を露出させるソース/ドレインコンタクトホールを有する層間絶縁膜と、
前記半導体層の露出した領域上に位置するソース/ドレイン電極と、
前記ソース/ドレイン電極と接続する画素電極と、を含み、
前記半導体層は、前記ソース/ドレインコンタクトホール内に露出した領域に対応する導電性のMIC領域、及び、前記MIC領域間のMILC領域を備えることを特徴とする平板表示装置。 - 前記ソース/ドレイン電極は、前記半導体層の露出した領域と直接的に接触することを特徴とする請求項6に記載の平板表示装置。
- 前記ソース/ドレイン電極と前記画素電極との間に位置する保護膜を更に含み、
前記画素電極は、前記保護膜を貫通するビアホールを介して前記ソース/ドレイン電極と接続することを特徴とする請求項6に記載の平板表示装置。 - 前記画素電極上に位置し、少なくとも発光層を備える有機機能膜と、
前記有機機能膜上に位置する対向電極と、を更に含むことを特徴とする請求項6に記載の平板表示装置。 - 基板上にゲート電極を形成する工程と、
前記ゲート電極上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記ゲート電極を横切る半導体層を形成する工程と、
前記半導体層を覆う層間絶縁膜を形成する工程と、
前記層間絶縁膜内に前記半導体層のエッジらのうち前記ゲート電極を横切る少なくとも一つのエッジから離隔して前記半導体層の一部の領域を露出させるソース/ドレインコンタクトホールを形成する工程と、
前記半導体層の露出した領域上に結晶化誘導金属膜を形成する工程と、
前記結晶化誘導金属膜が形成された基板を熱処理することにより、前記半導体層の前記ソース/ドレインコンタクトホール内に露出した領域に対応するMIC領域、及び、前記MIC領域間にMILC領域を形成する工程と、
前記基板を熱処理する工程後に、前記結晶化誘導金属膜を除去する工程と、
前記結晶化誘導金属膜を除去する工程後に、 前記層間絶縁膜をマスクとして前記半導体層のMIC領域に導電性不純物をドープして導電領域を形成する工程と、
前記導電領域上にソース/ドレイン電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 基板上にゲート電極を形成する工程と、
前記ゲート電極上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記ゲート電極を横切る半導体層を形成する工程と、 前記半導体層を覆う層間絶縁膜を形成する工程と、
前記層間絶縁膜内に前記半導体層のエッジらのうち前記ゲート電極を横切る少なくとも一つのエッジから離隔して前記半導体層の一部の領域を露出させるソース/ドレインコンタクトホールを形成する工程と、
前記層間絶縁膜をマスクとして前記半導体層の露出した領域に導電性不純物をドープして導電領域を形成する工程と、
前記半導体層の導電領域上に結晶化誘導金属膜を形成する工程と、
前記結晶化誘導金属膜が形成された基板を熱処理することにより、前記半導体層の前記導電領域に対応するMIC領域、及び、前記MIC領域間にMILC領域を形成する工程と、
前記基板を熱処理する工程後に、前記結晶化誘導金属膜を除去する工程と、
前記結晶化誘導金属膜を除去する工程後に、前記導電領域上にソース/ドレイン電極を形成する工程と、を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記ソース/ドレインコンタクトホールは、前記半導体層のエッジらのうち前記ゲート電極を横切るすべてのエッジから離隔するように形成することを特徴とする請求項10又は11に記載の薄膜トランジスタの製造方法。
- 前記ソース/ドレイン電極は、前記半導体層の導電領域と直接的に接触することを特徴とする請求項10又は11に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040079693A KR100659759B1 (ko) | 2004-10-06 | 2004-10-06 | 바텀 게이트형 박막트랜지스터, 그를 구비하는평판표시장치 및 박막트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006108623A JP2006108623A (ja) | 2006-04-20 |
JP4130666B2 true JP4130666B2 (ja) | 2008-08-06 |
Family
ID=36124650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005151498A Expired - Fee Related JP4130666B2 (ja) | 2004-10-06 | 2005-05-24 | ボトムゲート型薄膜トランジスタ、それを備える平板表示装置及び薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7709840B2 (ja) |
JP (1) | JP4130666B2 (ja) |
KR (1) | KR100659759B1 (ja) |
CN (1) | CN100448031C (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100841371B1 (ko) * | 2006-12-19 | 2008-06-26 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
WO2009034953A1 (ja) * | 2007-09-10 | 2009-03-19 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタ |
WO2009063648A1 (ja) | 2007-11-14 | 2009-05-22 | Panasonic Corporation | 薄膜トランジスタ、その製造方法および薄膜トランジスタを用いた電子機器 |
KR100934328B1 (ko) * | 2007-12-05 | 2009-12-29 | 재단법인서울대학교산학협력재단 | 하부 게이트를 갖는 다결정 실리콘 박막 트랜지스터 및 그제조방법 |
KR100965260B1 (ko) * | 2008-01-25 | 2010-06-22 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
JP5318865B2 (ja) | 2008-05-29 | 2013-10-16 | パナソニック株式会社 | 薄膜トランジスタと、その製造方法と、薄膜トランジスタを用いた電子機器 |
US9269573B2 (en) * | 2008-09-17 | 2016-02-23 | Idemitsu Kosan Co., Ltd. | Thin film transistor having crystalline indium oxide semiconductor film |
KR101534009B1 (ko) * | 2008-10-21 | 2015-07-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 및 박막 트랜지스터 표시판을 갖는 표시 장치 |
JP5384088B2 (ja) * | 2008-11-28 | 2014-01-08 | 株式会社ジャパンディスプレイ | 表示装置 |
KR101594471B1 (ko) | 2009-02-10 | 2016-02-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101041144B1 (ko) * | 2009-08-13 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
KR101649732B1 (ko) * | 2009-12-10 | 2016-08-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101117643B1 (ko) * | 2010-04-08 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 비정질 실리콘막의 결정화 방법, 그리고 박막 트랜지스터 및 이의 제조 방법 |
KR101182232B1 (ko) | 2010-06-30 | 2012-09-12 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
KR101774256B1 (ko) * | 2010-11-15 | 2017-09-05 | 삼성디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 그 제조 방법 |
CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
KR101903565B1 (ko) | 2011-10-13 | 2018-10-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
JP5681809B2 (ja) * | 2011-10-20 | 2015-03-11 | パナソニック株式会社 | 薄膜トランジスタ装置及びその製造方法 |
TWI473317B (zh) * | 2011-11-17 | 2015-02-11 | Au Optronics Corp | 可撓性主動元件陣列基板以及有機電激發光元件 |
KR101375846B1 (ko) * | 2012-04-10 | 2014-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그 제조방법 |
CN102842619B (zh) * | 2012-09-03 | 2016-08-03 | 南京中电熊猫液晶显示科技有限公司 | 一种半导体装置及其制造方法 |
CN103021866A (zh) * | 2012-12-19 | 2013-04-03 | 青岛意捷通信技术有限公司 | 底栅结构的单掩模自组装ito薄膜晶体管的制备工艺 |
CN103021871A (zh) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | 一种薄膜晶体管的制备工艺 |
TWI621270B (zh) * | 2013-02-07 | 2018-04-11 | 群創光電股份有限公司 | 薄膜電晶體元件與薄膜電晶體顯示裝置 |
CN103985761B (zh) * | 2013-02-07 | 2017-04-12 | 群创光电股份有限公司 | 薄膜晶体管元件与薄膜晶体管显示装置 |
KR102130139B1 (ko) | 2013-07-30 | 2020-07-03 | 엘지디스플레이 주식회사 | 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법 |
JP2015065202A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法 |
CN103715270B (zh) * | 2013-12-31 | 2016-03-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、显示器件 |
CN103972110B (zh) * | 2014-04-22 | 2016-02-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
CN104392928A (zh) * | 2014-11-20 | 2015-03-04 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制造方法 |
WO2017071662A1 (zh) * | 2015-10-29 | 2017-05-04 | 陆磊 | 一种薄膜晶体管及制造方法和显示器面板 |
US20190140102A1 (en) * | 2016-04-25 | 2019-05-09 | Sakai Display Products Corporation | Thin film transistor, display device, and thin film transistor manufacturing method |
US9793156B1 (en) * | 2016-09-12 | 2017-10-17 | International Business Machines Corporation | Self-aligned low resistance metallic interconnect structures |
CN107221552A (zh) * | 2017-05-25 | 2017-09-29 | 深圳市华星光电技术有限公司 | Toc型oled显示器的制作方法及toc型oled显示器 |
CN207165572U (zh) * | 2017-09-12 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
WO2019132894A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Self-aligned source electrode and drain electrode for thin film transistors |
CN110993697B (zh) * | 2019-11-28 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制造方法、显示面板 |
CN115548030A (zh) * | 2022-09-30 | 2022-12-30 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4115584B2 (ja) | 1998-03-27 | 2008-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6278130B1 (en) * | 1998-05-08 | 2001-08-21 | Seung-Ki Joo | Liquid crystal display and fabricating method thereof |
KR100317640B1 (ko) | 1999-05-21 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막 트랜지스터 및 그 제조방법 |
CN1263159C (zh) * | 1999-06-02 | 2006-07-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
KR100439345B1 (ko) * | 2000-10-31 | 2004-07-07 | 피티플러스(주) | 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법 |
KR100426210B1 (ko) * | 2000-11-11 | 2004-04-03 | 피티플러스(주) | 실리콘 박막 결정화 방법 |
KR20020057382A (ko) * | 2001-01-04 | 2002-07-11 | 주승기 | 반도체 소자 제조 방법 및 장치 |
KR100378259B1 (ko) * | 2001-01-20 | 2003-03-29 | 주승기 | 결정질 활성층을 포함하는 박막트랜지스터 제작 방법 및장치 |
KR100390523B1 (ko) * | 2001-01-20 | 2003-07-04 | 주승기 | 실리콘 박막 결정화 방법 |
KR100857719B1 (ko) | 2001-03-26 | 2008-09-08 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR20020076791A (ko) * | 2001-03-30 | 2002-10-11 | 주승기 | 실리콘 박막의 결정화 방법 및 이를 이용한박막트랜지스터 제조 방법 |
US6695955B2 (en) * | 2001-05-25 | 2004-02-24 | Lg.Philips Lcd Co., Ltd. | Method of forming polycrystalline silicon for liquid crystal display device |
KR100458710B1 (ko) * | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
KR100458714B1 (ko) * | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
KR100493378B1 (ko) * | 2001-12-08 | 2005-06-07 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막트랜지스터의 제조 방법 |
KR100464864B1 (ko) | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
US7105999B2 (en) | 2002-07-05 | 2006-09-12 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent display device and method of fabricating the same |
KR100496287B1 (ko) * | 2002-08-03 | 2005-06-20 | 삼성에스디아이 주식회사 | 실리콘 박막의 결정화 방법, 이를 이용한 박막 트랜지스터및 상기 박막 트랜지스터를 구비한 평판 디스플레이 소자 |
KR100955772B1 (ko) * | 2003-06-20 | 2010-04-30 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR100570974B1 (ko) * | 2003-06-25 | 2006-04-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 |
-
2004
- 2004-10-06 KR KR1020040079693A patent/KR100659759B1/ko not_active IP Right Cessation
-
2005
- 2005-05-24 JP JP2005151498A patent/JP4130666B2/ja not_active Expired - Fee Related
- 2005-09-21 US US11/232,290 patent/US7709840B2/en active Active
- 2005-09-26 CN CNB2005101068479A patent/CN100448031C/zh not_active Expired - Fee Related
-
2010
- 2010-04-13 US US12/759,576 patent/US7923736B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7923736B2 (en) | 2011-04-12 |
CN100448031C (zh) | 2008-12-31 |
JP2006108623A (ja) | 2006-04-20 |
US7709840B2 (en) | 2010-05-04 |
US20100193779A1 (en) | 2010-08-05 |
US20060071211A1 (en) | 2006-04-06 |
KR20060030816A (ko) | 2006-04-11 |
CN1761074A (zh) | 2006-04-19 |
KR100659759B1 (ko) | 2006-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4130666B2 (ja) | ボトムゲート型薄膜トランジスタ、それを備える平板表示装置及び薄膜トランジスタの製造方法 | |
JP5197211B2 (ja) | 薄膜トランジスタ、その製造方法、及びこれを具備した有機電界発光表示装置 | |
JP5090253B2 (ja) | 多結晶シリコン層の製造方法、これを利用して形成された薄膜トランジスタ、その製造方法及びこれを含む有機電界発光表示装置 | |
KR100889626B1 (ko) | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 | |
US7999261B2 (en) | Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the TFT | |
JP5126849B2 (ja) | 薄膜トランジスタ、その製造方法、並びに、それを含む有機電界発光表示装置 | |
KR101002666B1 (ko) | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 | |
JP2009004770A (ja) | 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 | |
EP2226833B1 (en) | Method of fabricating a thin film transistor | |
WO2016175086A1 (ja) | 半導体装置及びその製造方法 | |
JP2009239252A (ja) | 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置 | |
EP2226848A1 (en) | Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the same | |
WO2019234892A1 (ja) | 薄膜トランジスタおよびその製造方法 | |
KR100965980B1 (ko) | 금속 유도 측면 결정화를 이용한 다결정 실리콘 박막트랜지스터 및 그의 제조방법 | |
KR100685402B1 (ko) | 바텀 게이트형 박막트랜지스터, 그를 구비하는평판표시장치 및 박막트랜지스터의 제조방법 | |
WO2019171590A1 (ja) | 薄膜トランジスタおよびその製造方法 | |
KR20050117132A (ko) | 박막트랜지스터의 제조방법, 그를 사용하여 제조된박막트랜지스터 및 그를 포함하는 평판표시장치 | |
JP2009147153A (ja) | 薄膜トランジスタ構造、表示装置及びその製造方法 | |
JPH10189993A (ja) | 半導体装置及びその製造方法 | |
KR20060070351A (ko) | 박막 트랜지스터 표시판의 제조 방법 | |
KR20060041020A (ko) | 박막 트랜지스터 및 박막 트랜지스터 표시판의 제조방법과 이를 통하여 제조한 박막 트랜지스터 표시판 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071127 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080227 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080303 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080327 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080422 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080522 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110530 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110530 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110530 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110530 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110530 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120530 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130530 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130530 Year of fee payment: 5 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130530 Year of fee payment: 5 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |