CN100416882C - 场效应晶体管及其制备用的材料和方法 - Google Patents
场效应晶体管及其制备用的材料和方法 Download PDFInfo
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- CN100416882C CN100416882C CNB018195636A CN01819563A CN100416882C CN 100416882 C CN100416882 C CN 100416882C CN B018195636 A CNB018195636 A CN B018195636A CN 01819563 A CN01819563 A CN 01819563A CN 100416882 C CN100416882 C CN 100416882C
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0028867.0 | 2000-11-28 | ||
| GBGB0028867.0A GB0028867D0 (en) | 2000-11-28 | 2000-11-28 | Field effect translators,methods for the manufacture thereof and materials therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1478309A CN1478309A (zh) | 2004-02-25 |
| CN100416882C true CN100416882C (zh) | 2008-09-03 |
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| CNB018195636A Expired - Lifetime CN100416882C (zh) | 2000-11-28 | 2001-11-21 | 场效应晶体管及其制备用的材料和方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10141624A1 (de) * | 2001-08-24 | 2003-03-06 | Covion Organic Semiconductors | Lösungen polymerer Halbleiter |
| DE10151036A1 (de) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| US7029945B2 (en) * | 2001-12-19 | 2006-04-18 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
| US6777529B2 (en) * | 2002-01-11 | 2004-08-17 | Xerox Corporation | Polythiophenes and devices thereof |
| US6621099B2 (en) * | 2002-01-11 | 2003-09-16 | Xerox Corporation | Polythiophenes and devices thereof |
| JP4545373B2 (ja) * | 2002-11-07 | 2010-09-15 | 旭化成株式会社 | 有機半導体薄膜及びその製造方法 |
| KR101247430B1 (ko) | 2002-12-20 | 2013-03-25 | 메르크 파텐트 게엠베하 | 유기 반도체 재료의 개선 및 그와 관련된 개선 |
| JP5025074B2 (ja) * | 2003-02-13 | 2012-09-12 | 株式会社リコー | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
| DE602004005685T2 (de) * | 2003-03-07 | 2007-12-27 | Koninklijke Philips Electronics N.V. | Verfahren zur herstellung einer elektronischen anordnung |
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| KR20030055318A (ko) | 2003-07-02 |
| EP1340270A1 (en) | 2003-09-03 |
| CA2427222C (en) | 2014-08-12 |
| CA2427222A1 (en) | 2002-06-06 |
| ATE350769T1 (de) | 2007-01-15 |
| JP4429603B2 (ja) | 2010-03-10 |
| CN1478309A (zh) | 2004-02-25 |
| US20040038459A1 (en) | 2004-02-26 |
| DE60125819D1 (de) | 2007-02-15 |
| EP1340270B1 (en) | 2007-01-03 |
| DE60125819T2 (de) | 2007-10-11 |
| WO2002045184A1 (en) | 2002-06-06 |
| AU2002220818B2 (en) | 2006-09-28 |
| KR100824026B1 (ko) | 2008-04-21 |
| JP2004525501A (ja) | 2004-08-19 |
| US7095044B2 (en) | 2006-08-22 |
| AU2081802A (en) | 2002-06-11 |
| GB0028867D0 (en) | 2001-01-10 |
| JP2010028123A (ja) | 2010-02-04 |
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