CA2225681C - Barrier layer for ferroelectric capacitor integrated on silicon - Google Patents

Barrier layer for ferroelectric capacitor integrated on silicon Download PDF

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Publication number
CA2225681C
CA2225681C CA002225681A CA2225681A CA2225681C CA 2225681 C CA2225681 C CA 2225681C CA 002225681 A CA002225681 A CA 002225681A CA 2225681 A CA2225681 A CA 2225681A CA 2225681 C CA2225681 C CA 2225681C
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CA
Canada
Prior art keywords
layer
recited
ferroelectric
metal
perovskite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002225681A
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English (en)
French (fr)
Other versions
CA2225681A1 (en
Inventor
Ramamoorthy Ramesh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Telcordia Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telcordia Technologies Inc filed Critical Telcordia Technologies Inc
Publication of CA2225681A1 publication Critical patent/CA2225681A1/en
Application granted granted Critical
Publication of CA2225681C publication Critical patent/CA2225681C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CA002225681A 1995-06-28 1996-06-24 Barrier layer for ferroelectric capacitor integrated on silicon Expired - Fee Related CA2225681C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49745795A 1995-06-28 1995-06-28
US497,457 1995-06-28
PCT/US1996/010780 WO1997001854A1 (en) 1995-06-28 1996-06-24 Barrier layer for ferroelectric capacitor integrated on silicon

Publications (2)

Publication Number Publication Date
CA2225681A1 CA2225681A1 (en) 1997-01-16
CA2225681C true CA2225681C (en) 2001-09-11

Family

ID=23976959

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002225681A Expired - Fee Related CA2225681C (en) 1995-06-28 1996-06-24 Barrier layer for ferroelectric capacitor integrated on silicon

Country Status (8)

Country Link
US (1) US5838035A (https=)
EP (1) EP0972309A4 (https=)
JP (1) JP3373525B2 (https=)
KR (1) KR100292012B1 (https=)
CA (1) CA2225681C (https=)
IL (1) IL118756A (https=)
TW (1) TW298649B (https=)
WO (1) WO1997001854A1 (https=)

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Also Published As

Publication number Publication date
CA2225681A1 (en) 1997-01-16
EP0972309A1 (en) 2000-01-19
KR19990035743A (ko) 1999-05-25
KR100292012B1 (ko) 2001-11-15
IL118756A (en) 2000-11-21
US5838035A (en) 1998-11-17
EP0972309A4 (en) 2000-01-19
JP3373525B2 (ja) 2003-02-04
WO1997001854A1 (en) 1997-01-16
TW298649B (https=) 1997-02-21
JPH11502376A (ja) 1999-02-23
IL118756A0 (en) 1996-10-16

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