ATE520156T1 - Iii-v-halbleiterkern-heteroshell-nanokristalle, verfahren zu ihrer herstellung und ihre verwendungen - Google Patents

Iii-v-halbleiterkern-heteroshell-nanokristalle, verfahren zu ihrer herstellung und ihre verwendungen

Info

Publication number
ATE520156T1
ATE520156T1 AT06756221T AT06756221T ATE520156T1 AT E520156 T1 ATE520156 T1 AT E520156T1 AT 06756221 T AT06756221 T AT 06756221T AT 06756221 T AT06756221 T AT 06756221T AT E520156 T1 ATE520156 T1 AT E520156T1
Authority
AT
Austria
Prior art keywords
heteroshell
nanocrystals
iii
production
semiconductor core
Prior art date
Application number
AT06756221T
Other languages
English (en)
Inventor
Uri Banin
Assaf Aharoni
Original Assignee
Yissum Res Dev Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yissum Res Dev Co filed Critical Yissum Res Dev Co
Application granted granted Critical
Publication of ATE520156T1 publication Critical patent/ATE520156T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/70—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
AT06756221T 2005-06-15 2006-06-15 Iii-v-halbleiterkern-heteroshell-nanokristalle, verfahren zu ihrer herstellung und ihre verwendungen ATE520156T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69047405P 2005-06-15 2005-06-15
PCT/IL2006/000695 WO2006134599A1 (en) 2005-06-15 2006-06-15 Iii-v semiconductor core-heteroshell nanocrystals

Publications (1)

Publication Number Publication Date
ATE520156T1 true ATE520156T1 (de) 2011-08-15

Family

ID=36933587

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06756221T ATE520156T1 (de) 2005-06-15 2006-06-15 Iii-v-halbleiterkern-heteroshell-nanokristalle, verfahren zu ihrer herstellung und ihre verwendungen

Country Status (7)

Country Link
US (2) US7964278B2 (de)
EP (1) EP1891686B1 (de)
JP (1) JP5137825B2 (de)
KR (1) KR101374512B1 (de)
CN (1) CN100570912C (de)
AT (1) ATE520156T1 (de)
WO (1) WO2006134599A1 (de)

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
WO2006134599A1 (en) * 2005-06-15 2006-12-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals
GB2472541B (en) 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
GB0522027D0 (en) 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
JP5169222B2 (ja) * 2006-01-30 2013-03-27 コニカミノルタエムジー株式会社 三層型半導体ナノ粒子および三層型半導体ナノロッド
KR101290251B1 (ko) * 2006-08-21 2013-07-30 삼성전자주식회사 복합 발광 재료 및 그를 포함하는 발광 소자
JP4318710B2 (ja) * 2006-10-12 2009-08-26 シャープ株式会社 ナノ結晶粒子蛍光体と被覆ナノ結晶粒子蛍光体、ならびに被覆ナノ結晶粒子蛍光体の製造方法
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008133660A2 (en) * 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US7534638B2 (en) * 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US8563348B2 (en) 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
WO2009106810A1 (en) 2008-02-25 2009-09-03 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
JP5192854B2 (ja) * 2008-03-06 2013-05-08 日本放送協会 蛍光体及びこれを用いた表示パネル
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
CN105870345B (zh) 2008-04-03 2019-01-01 三星研究美国股份有限公司 包括量子点的发光器件
FR2930786B1 (fr) * 2008-05-05 2010-12-31 Commissariat Energie Atomique Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
US20100090164A1 (en) * 2008-06-10 2010-04-15 Xiaogang Peng Indium arsenide nanocrystals and methods of making the same
GB0813273D0 (en) 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
CN102264630B (zh) * 2008-10-24 2016-10-19 生命科技公司 稳定的纳米粒子以及制造和使用这种粒子的方法
JP2010106119A (ja) * 2008-10-29 2010-05-13 Sharp Corp 半導体ナノ粒子蛍光体
GB0820101D0 (en) 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
KR101462658B1 (ko) 2008-12-19 2014-11-17 삼성전자 주식회사 반도체 나노 결정 및 그 제조 방법
JP4936338B2 (ja) * 2008-12-26 2012-05-23 シャープ株式会社 半導体ナノ粒子蛍光体
WO2010095140A2 (en) 2009-02-23 2010-08-26 Yissum Research Development Company Of The Hebrew University Of Jerusalem Optical display device and method thereof
US8030624B2 (en) * 2009-03-03 2011-10-04 GM Global Technology Operations LLC Photoluminescent coating for vehicles
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
CA2775324C (en) 2009-09-23 2018-05-15 Crystalplex Corporation Passivated nanoparticles
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
US20110108102A1 (en) * 2009-11-06 2011-05-12 Honeywell International Inc. Solar cell with enhanced efficiency
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
KR101664180B1 (ko) * 2010-03-22 2016-10-12 삼성디스플레이 주식회사 양자점 제조 방법
WO2011122638A1 (ja) * 2010-03-30 2011-10-06 Tdk株式会社 焼結磁石、モーター、自動車、及び焼結磁石の製造方法
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
US9382474B2 (en) * 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
WO2011141917A2 (en) 2010-05-13 2011-11-17 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Nanoparticle-coated mesoporous surfaces and uses thereof
KR101738551B1 (ko) 2010-06-24 2017-05-23 삼성전자주식회사 반도체 나노 결정
US20120031490A1 (en) * 2010-08-03 2012-02-09 Honeywell International Inc. Quantum dot solar cells and methods for manufacturing such solar cells
WO2012035535A1 (en) 2010-09-16 2012-03-22 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Anistropic semiconductor nanoparticles
JP5744468B2 (ja) * 2010-10-20 2015-07-08 シャープ株式会社 半導体ナノ粒子蛍光体
JP6084572B2 (ja) 2010-11-05 2017-02-22 イサム・リサーチ・デベロツプメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシテイ・オブ・エルサレム・リミテッド 偏光照明システム
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
JP5937521B2 (ja) * 2011-01-28 2016-06-22 昭和電工株式会社 量子ドット蛍光体を含む組成物、量子ドット蛍光体分散樹脂成形体、量子ドット蛍光体を含む構造物、発光装置、電子機器、機械装置及び量子ドット蛍光体分散樹脂成形体の製造方法
WO2012111009A2 (en) 2011-02-14 2012-08-23 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Heavily doped semiconductor nanoparticles
JP5490042B2 (ja) * 2011-03-10 2014-05-14 トヨタ自動車株式会社 水分解用光触媒及びそれを含む水分解用光電極
WO2012158832A2 (en) * 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
JP2012246470A (ja) * 2011-05-31 2012-12-13 Sharp Corp 半導体ナノ粒子の製造方法、半導体ナノ粒子、ならびにこれを用いた蛍光体
KR101320549B1 (ko) * 2011-06-14 2013-10-28 주식회사 큐디솔루션 코어-다중쉘 구조의 양자점 및 이의 제조방법
WO2013028253A1 (en) 2011-08-19 2013-02-28 Qd Vision, Inc. Semiconductor nanocrystals and methods
KR101278257B1 (ko) * 2011-08-25 2013-06-24 한국기계연구원 양자점 및 그 제조 방법
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
KR101355120B1 (ko) * 2012-01-04 2014-01-27 아주대학교산학협력단 ＩｎＰ／ＧａＰ／ＺｎＳ 양자점과 이를 이용한 백색 ＬＥＤ
KR101960469B1 (ko) * 2012-02-05 2019-03-20 삼성전자주식회사 반도체 나노결정, 그의 제조 방법, 조성물 및 제품
DE102012203036A1 (de) * 2012-02-28 2013-08-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Lumineszierende, cadmiumfreie Kern-Multischalen-Quantenpunkte auf Basis von Indiumphosphid
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
US9425365B2 (en) * 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
US9076712B2 (en) * 2012-09-04 2015-07-07 Massachusetts Institute Of Technology Solid state cloaking for electrical charge carrier mobility control
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
US20150243837A1 (en) * 2013-03-15 2015-08-27 Moonsub Shim Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
US8937294B2 (en) 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
US9123638B2 (en) 2013-03-15 2015-09-01 Rohm And Haas Electronic Materials, Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
CN103361066A (zh) * 2013-06-28 2013-10-23 上海纳米技术及应用国家工程研究中心有限公司 一步法合成CdSe/CdS核壳结构量子点的制备方法
KR102164628B1 (ko) 2013-08-05 2020-10-13 삼성전자주식회사 나노 결정 합성 방법
US11746290B2 (en) 2013-09-26 2023-09-05 Samsung Electronics Co., Ltd. Nanocrystal particles and processes for synthesizing the same
EP2853578B1 (de) * 2013-09-26 2017-08-30 Samsung Electronics Co., Ltd Nanokristallpartikel und Verfahren zur Synthetisierung davon
US12215266B2 (en) 2013-09-26 2025-02-04 Samsung Electronics Co., Ltd. Nanocrystal particles and processes for synthesizing the same
EP3148712B1 (de) 2014-05-29 2021-08-18 Crystalplex Corporation Dispergiersystem für quantenpunkte
CN106537608B (zh) * 2014-07-28 2020-04-10 亮锐控股有限公司 具有改进的量子效率的二氧化硅涂敷的量子点
KR101549357B1 (ko) 2014-12-29 2015-09-01 한화토탈 주식회사 이방성 금속 나노입자를 이용하는 고효율 전계발광소자
JP6764230B2 (ja) * 2015-02-06 2020-09-30 スタンレー電気株式会社 半導体ナノ粒子の製造方法
CN107531485B (zh) 2015-05-15 2021-05-04 富士胶片株式会社 核壳粒子、核壳粒子的制造方法及薄膜
CN107614423B (zh) * 2015-05-15 2021-05-07 富士胶片株式会社 核壳粒子、核壳粒子的制造方法及薄膜
JP6513193B2 (ja) 2015-05-15 2019-05-15 富士フイルム株式会社 マルチコアシェル粒子、ナノ粒子分散液およびフィルム
JP2018527594A (ja) 2015-05-28 2018-09-20 キュライト ナノテク リミテッドＱｌｉｇｈｔ Ｎａｎｏｔｅｃｈ Ｌｔｄ． シードナノ粒子、それらの製造および使用
US11142692B2 (en) * 2015-07-28 2021-10-12 The Regents Of The University Of California Capped co-doped core/shell nanocrystals for visible light emission
KR20180027629A (ko) * 2015-07-30 2018-03-14 퍼시픽 라이트 테크놀로지스 코포레이션 카드뮴 함량이 낮은 나노결정질 양자점 헤테로구조물
CN105153811B (zh) 2015-08-14 2019-12-10 广州华睿光电材料有限公司 一种用于印刷电子的油墨
WO2017038487A1 (ja) * 2015-08-31 2017-03-09 富士フイルム株式会社 半導体ナノ粒子、分散液、フィルムおよび半導体ナノ粒子の製造方法
EP3347432B1 (de) 2015-09-10 2019-11-27 Merck Patent GmbH Lichtkonvertierendes material
JP2016040842A (ja) * 2015-11-04 2016-03-24 Ｎｓマテリアルズ株式会社 Ｌｅｄ素子、その製造方法、及びｌｅｄ素子の色調補正方法
US11555128B2 (en) 2015-11-12 2023-01-17 Guangzhou Chinaray Optoelectronic Materials Ltd. Printing composition, electronic device comprising same and preparation method for functional material thin film
EP3375838B1 (de) 2015-11-12 2021-04-07 FUJIFILM Corporation Kern-hülle-partikel und verfahren zur herstellung von kern-hülle-partikeln sowie film
CN105405941B (zh) * 2016-01-06 2019-03-01 Tcl集团股份有限公司 一种基于量子阱结构的量子点发光二极管及其制备方法
EP3458544A4 (de) 2016-05-19 2020-04-08 Crystalplex Corporation Cadmiumfreie quantenpunkte, abstimmbare quantenpunkte, quantenpunkthaltiges polymer, artikel, filme und 3d-struktur damit und verfahren zur herstellung und verwendung davon
CN109153569B (zh) * 2016-05-27 2019-11-12 富士胶片株式会社 核壳粒子、核壳粒子的制造方法及薄膜
KR101797366B1 (ko) 2016-06-16 2017-11-13 아주대학교산학협력단 양자점의 제조 방법
KR102608507B1 (ko) * 2016-08-30 2023-12-01 삼성디스플레이 주식회사 표시장치 및 그 제조방법
CN106479481B (zh) * 2016-09-20 2019-04-30 纳晶科技股份有限公司 ZnSe/III-V族/ZnSexS1-x或ZnSe/III-V族/ZnSe/ZnS量子点及其制备方法
JP6630447B2 (ja) 2016-11-15 2020-01-15 富士フイルム株式会社 コアシェル粒子、コアシェル粒子の製造方法およびフィルム
WO2018092638A1 (ja) * 2016-11-15 2018-05-24 富士フイルム株式会社 コアシェル粒子、コアシェル粒子の製造方法およびフィルム
WO2018095381A1 (zh) 2016-11-23 2018-05-31 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途
CN106784349B (zh) * 2016-12-21 2020-02-07 Tcl集团股份有限公司 一种能级势垒高度连续变化的量子点固态膜及其制备方法
KR102612499B1 (ko) * 2016-12-23 2023-12-08 쿼스텀닷 비.브이. Iii-v 코어와 합금된 ii-vi 외부 쉘을 갖는 양자점
CN110115106A (zh) * 2016-12-28 2019-08-09 Dic株式会社 发光元件和使用其的图像显示元件
CN106601886B (zh) * 2016-12-30 2019-03-19 Tcl集团股份有限公司 具有量子阱能级结构的纳米晶体、制备方法及半导体器件
WO2018146120A1 (en) 2017-02-10 2018-08-16 Merck Patent Gmbh Semiconductor nanosized material
CN110352229A (zh) 2017-02-10 2019-10-18 默克专利股份有限公司 半导体纳米材料
EP3612613A1 (de) * 2017-04-19 2020-02-26 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Halbleiternanostrukturen und -anwendungen
KR102618410B1 (ko) 2017-05-11 2023-12-27 삼성전자주식회사 반도체 나노결정 입자 및 이를 포함하는 소자
EP3645660B1 (de) 2017-06-30 2022-09-14 Merck Patent GmbH Wellenlängenumwandlungselement
US10768485B2 (en) 2017-07-05 2020-09-08 Nanoco Technologies Ltd. Quantum dot architectures for color filter applications
CN107502335B (zh) * 2017-07-10 2020-04-17 南京大学 高荧光效率核壳结构无镉量子点及其制备方法和用途
US20190044034A1 (en) 2017-08-07 2019-02-07 Sabic Global Technologies B.V. Stable quantum dot extrusion film
CN107747107B (zh) * 2017-10-13 2019-05-24 首都师范大学 磷化铟包覆硫化铟的核壳结构半导体纳米片材料及其制备方法
US11888095B2 (en) 2017-10-13 2024-01-30 Merck Patent Gmbh Manufacturing process for an optoelectronic device
WO2019082120A1 (en) 2017-10-25 2019-05-02 Sabic Global Technologies B.V. QUANTIC POINTS ARRANGED IN A THIN LAYER FOR PORTABLE DEVICE
WO2019101838A1 (en) 2017-11-24 2019-05-31 Merck Patent Gmbh A semiconductor light emitting material
US11515453B2 (en) 2017-12-18 2022-11-29 LITEC-Vermögensverwaltungsgesellschaft mbH Light-converting material with semiconductor nanoparticles, process for its preparation, and light source
US11365348B2 (en) 2018-01-11 2022-06-21 Samsung Electronics Co., Ltd. Quantum dot, production method thereof, and electronic device including the same
EP3511394B1 (de) * 2018-01-11 2021-09-08 Samsung Electronics Co., Ltd. Quantenpunkte, zusammensetzung oder verbundstoff damit und elektronische vorrichtung damit
KR20200123445A (ko) 2018-02-22 2020-10-29 사빅 글로벌 테크놀러지스 비.브이. 안정화된 양자점을 갖는 상 분리된 양자점 층
US10954440B2 (en) 2018-03-09 2021-03-23 Samsung Electronics Co., Ltd. Quantum dots and devices including the same
CN110246987B (zh) 2018-03-09 2024-11-01 三星电子株式会社 量子点、其制造方法、电致发光器件和显示设备
KR102718276B1 (ko) * 2018-03-09 2024-10-16 삼성전자주식회사 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자
PL3768800T3 (pl) 2018-03-20 2022-08-29 LITEC-Vermögensverwaltungsgesellschaft mbH Tlenohalogenki aktywowane mn jako luminofory konwersji dla półprzewodnikowych źródeł światła na bazie led
WO2019194749A1 (en) * 2018-04-04 2019-10-10 National University Of Singapore Luminescent nanoparticles and luminescent solar concentrators containing same
CN108485650A (zh) * 2018-04-27 2018-09-04 深圳扑浪创新科技有限公司 一种复合结构量子点及其制备方法和用途
EP3802729A1 (de) * 2018-06-04 2021-04-14 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Nanopartikelarchitekturen und verfahren zur herstellung davon
CN108929691B (zh) * 2018-08-31 2021-09-07 宁波纳鼎新材料科技有限公司 一种量子点及其合成方法与应用
TW202024305A (zh) 2018-09-14 2020-07-01 德商馬克專利公司 發射藍光之磷光體化合物
EP3656833B1 (de) 2018-11-23 2025-03-19 Samsung Display Co., Ltd. Quantenpunkte, zusammensetzungen oder verbundstoffe damit und elektronische vorrichtung damit
KR102200585B1 (ko) * 2019-03-22 2021-01-11 재단법인대구경북과학기술원 고발광성 단파 적외선 나노입자 및 이의 제조방법
CN109999849A (zh) * 2019-04-23 2019-07-12 福州大学 一种正交相ⅲ-ⅵ族异质结光催化材料及其化学气相沉积方法
US11557686B2 (en) * 2019-08-26 2023-01-17 Osram Opto Semiconductors Gmbh Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device
US11702593B2 (en) 2020-02-28 2023-07-18 Samsung Electronics Co., Ltd. Quantum dots, and electronic devices and electronic equipments including same
US11753589B2 (en) 2020-07-23 2023-09-12 Samsung Electronics Co., Ltd. Quantum dots, quantum dot-polymer composite, and electronic device including the same
KR102870805B1 (ko) 2020-11-11 2025-10-14 삼성디스플레이 주식회사 반도체 나노 입자, 이를 포함한 색변환 부재, 이를 포함한 전자 장치 및 이의 제조방법
WO2025188526A1 (en) * 2024-03-08 2025-09-12 The University Of Chicago Direct synthesis of colloidal nanocrystals in a molten inorganic salt solvent
CN119994640B (zh) * 2025-04-15 2025-07-15 南京邮电大学 一种低阈值的量子点激光器及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US20020004246A1 (en) 2000-02-07 2002-01-10 Daniels Robert H. Immunochromatographic methods for detecting an analyte in a sample which employ semiconductor nanocrystals as detectable labels
IL138471A0 (en) 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
IL146226A0 (en) 2001-10-29 2002-12-01 Yissum Res Dev Co Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
US8134175B2 (en) 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
WO2006134599A1 (en) * 2005-06-15 2006-12-21 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals

Also Published As

Publication number Publication date
WO2006134599A1 (en) 2006-12-21
US20110212561A1 (en) 2011-09-01
KR20080046158A (ko) 2008-05-26
CN100570912C (zh) 2009-12-16
EP1891686B1 (de) 2011-08-10
US7964278B2 (en) 2011-06-21
EP1891686A1 (de) 2008-02-27
JP5137825B2 (ja) 2013-02-06
JP2008544013A (ja) 2008-12-04
US8343576B2 (en) 2013-01-01
CN101194372A (zh) 2008-06-04
US20090230382A1 (en) 2009-09-17
KR101374512B1 (ko) 2014-03-14

Similar Documents

Publication Publication Date Title
ATE520156T1 (de) Iii-v-halbleiterkern-heteroshell-nanokristalle, verfahren zu ihrer herstellung und ihre verwendungen
WO2005110916A3 (en) Iii-v semiconductor nanocrystal complexes and methods of making same
WO2009094160A3 (en) Semiconductor nanocrystals
TW200704744A (en) Wavelength-converting converter-material, light-radiating optical component and method for its production
MY142960A (en) Cholesteric monolayers and monolayer pigments with particular properties, their production and use
EP2620450A3 (de) Antikörperzusammensetzungen gegen CTL4
DE60141706D1 (de) Verbindungen mit fungizider wirkung und verfahren zur ihrer herstellung und verwendung
EP1762642A3 (de) Verfahren zur Herstellung einer mehrschaligen nanokristallinen Struktur, mehrschalige nanokristalline Strukturen und eine damit hergestellte Anordnung
ATE381564T1 (de) Arylsubstituierte polycyclische amine, verfahren zu ihrer herstellung und ihre verwendung als arzneimittel
WO2006116002A3 (en) Tgf beta 1 specific antibodies
GEP20125572B (en) Use of spiroheterocyclic pyrrolidine dione derivatives as pesticides
ATE497984T1 (de) Dimercaptanterminierte polythioetherpolymere und verfahren zu ihrer herstellung und verwendung
WO2009025913A3 (en) Magnesium-based coatings for nanocrystals
SG158848A1 (en) Method for producing annelated piperazin-2-one derivatives and intermediates of said method
ATE488557T1 (de) Farbstoffmischungen von faserreaktiven azofarbstoffen, ihre herstellung und ihre verwendung
DE60309070D1 (de) Umhüllte persauerstoffverbindungen mit gesteuerter freisetzung, ein verfahren zu ihrer herstellung und ihre verwendung
DE602007002183D1 (de) Anorganischer optischer aufheller
DE502004002037D1 (de) Umgelagerte pentanole, ein verfahren zu ihrer herstellung und ihre verwendung als entz ndungshemmer
WO2005030150A3 (en) 9,10-α,α-OH-TAXANE ANALOGS AND METHODS FOR PRODUCTION THEREOF
ATE486857T1 (de) Verfahren zur herstellung von telmisartan
WO2008126466A1 (ja) 紫外線を発光する応力発光材料およびその製造方法、並びにその利用
WO2006066950A3 (de) Tricyclische aminoalkohole, verfahren zu ihrer herstellung und ihre verwendung als entzündungshemmer
WO2005031802A3 (en) Hybrid synthesis of core/shell nanocrystals
ATE286056T1 (de) Indolinospiropyranverbindungen und methoden zu ihrer herstellung
WO2011073060A3 (en) 2 -aryl-3 -hydroxy-cyclopentenone derivatives as insecticides, acaricides, nematocides and molluscicides

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties