ATE418792T1 - Photoelektrische umwandlungsvorrichtung und bildaufnahmesystem - Google Patents

Photoelektrische umwandlungsvorrichtung und bildaufnahmesystem

Info

Publication number
ATE418792T1
ATE418792T1 AT04029230T AT04029230T ATE418792T1 AT E418792 T1 ATE418792 T1 AT E418792T1 AT 04029230 T AT04029230 T AT 04029230T AT 04029230 T AT04029230 T AT 04029230T AT E418792 T1 ATE418792 T1 AT E418792T1
Authority
AT
Austria
Prior art keywords
impurity region
impurity
concentration
photoelectric conversion
conversion device
Prior art date
Application number
AT04029230T
Other languages
English (en)
Inventor
Hiroshi Yuzurihara
Ryuichi Mishima
Takanori Watanabe
Takeshi Ichikawa
Seiichi Tamura
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004252310A external-priority patent/JP4612818B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE418792T1 publication Critical patent/ATE418792T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT04029230T 2003-12-12 2004-12-09 Photoelektrische umwandlungsvorrichtung und bildaufnahmesystem ATE418792T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003415011 2003-12-12
JP2004252310A JP4612818B2 (ja) 2004-08-31 2004-08-31 固体撮像素子、固体撮像装置及び撮像システム

Publications (1)

Publication Number Publication Date
ATE418792T1 true ATE418792T1 (de) 2009-01-15

Family

ID=34525512

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04029230T ATE418792T1 (de) 2003-12-12 2004-12-09 Photoelektrische umwandlungsvorrichtung und bildaufnahmesystem

Country Status (6)

Country Link
US (5) US7323731B2 (de)
EP (1) EP1542286B1 (de)
KR (1) KR100615542B1 (de)
CN (1) CN100438049C (de)
AT (1) ATE418792T1 (de)
DE (1) DE602004018603D1 (de)

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JP5697371B2 (ja) * 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP2013016675A (ja) * 2011-07-05 2013-01-24 Sony Corp 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
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JP2015046454A (ja) * 2013-08-28 2015-03-12 キヤノン株式会社 半導体装置の製造方法および半導体装置
JP6355311B2 (ja) 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
KR102301778B1 (ko) * 2014-08-28 2021-09-13 삼성전자주식회사 이미지 센서, 및 상기 이미지 센서의 픽셀
JP6541361B2 (ja) 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置
JP2016164977A (ja) * 2015-02-27 2016-09-08 キヤノン株式会社 ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法
CN113437104A (zh) * 2015-02-27 2021-09-24 索尼公司 固态成像装置及电子装置
EP3113224B1 (de) * 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Abbildungsvorrichtung, verfahren zur herstellung davon und kamera
JP6862129B2 (ja) * 2016-08-29 2021-04-21 キヤノン株式会社 光電変換装置および撮像システム
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
CN114222080B (zh) * 2021-12-15 2024-07-16 上海韦尔半导体股份有限公司 一种高动态像素结构

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Also Published As

Publication number Publication date
US20110163407A1 (en) 2011-07-07
US20050127415A1 (en) 2005-06-16
US7679116B2 (en) 2010-03-16
KR100615542B1 (ko) 2006-08-29
EP1542286B1 (de) 2008-12-24
CN1627524A (zh) 2005-06-15
EP1542286A3 (de) 2006-03-08
US7473948B2 (en) 2009-01-06
US20100096676A1 (en) 2010-04-22
DE602004018603D1 (de) 2009-02-05
CN100438049C (zh) 2008-11-26
US7323731B2 (en) 2008-01-29
US7928486B2 (en) 2011-04-19
KR20050058977A (ko) 2005-06-17
US20080073737A1 (en) 2008-03-27
EP1542286A2 (de) 2005-06-15
US20090085144A1 (en) 2009-04-02

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