DE69840004D1 - Silizium-Halbleiterwafer mit idealem Sauerstoff-Ablagerungsverhalten - Google Patents

Silizium-Halbleiterwafer mit idealem Sauerstoff-Ablagerungsverhalten

Info

Publication number
DE69840004D1
DE69840004D1 DE69840004T DE69840004T DE69840004D1 DE 69840004 D1 DE69840004 D1 DE 69840004D1 DE 69840004 T DE69840004 T DE 69840004T DE 69840004 T DE69840004 T DE 69840004T DE 69840004 D1 DE69840004 D1 DE 69840004D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
silicon semiconductor
oxygen deposition
deposition behavior
ideal oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840004T
Other languages
English (en)
Inventor
Robert Falster
Daniela Gambaro
Marco Cornara
Massimiliano Olmo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25194044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69840004(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69840004D1 publication Critical patent/DE69840004D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
DE69840004T 1997-02-26 1998-02-25 Silizium-Halbleiterwafer mit idealem Sauerstoff-Ablagerungsverhalten Expired - Lifetime DE69840004D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/806,436 US5994761A (en) 1997-02-26 1997-02-26 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor

Publications (1)

Publication Number Publication Date
DE69840004D1 true DE69840004D1 (de) 2008-10-23

Family

ID=25194044

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69840004T Expired - Lifetime DE69840004D1 (de) 1997-02-26 1998-02-25 Silizium-Halbleiterwafer mit idealem Sauerstoff-Ablagerungsverhalten
DE1998617365 Expired - Lifetime DE69817365T2 (de) 1997-02-26 1998-02-25 Sauerstoffausdiffusionsloses sauerstoff-ausfällungsverfahren in siliziumwafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1998617365 Expired - Lifetime DE69817365T2 (de) 1997-02-26 1998-02-25 Sauerstoffausdiffusionsloses sauerstoff-ausfällungsverfahren in siliziumwafer

Country Status (9)

Country Link
US (7) US5994761A (de)
EP (3) EP1300879B1 (de)
JP (1) JP3288721B2 (de)
KR (2) KR100395391B1 (de)
CN (1) CN1158696C (de)
DE (2) DE69840004D1 (de)
MY (1) MY132868A (de)
TW (1) TW528815B (de)
WO (1) WO1998038675A1 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
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