ATE280435T1 - Vorrichtung und verfahren zur behandlung von halbleiter-plättchen - Google Patents
Vorrichtung und verfahren zur behandlung von halbleiter-plättchenInfo
- Publication number
- ATE280435T1 ATE280435T1 AT98101824T AT98101824T ATE280435T1 AT E280435 T1 ATE280435 T1 AT E280435T1 AT 98101824 T AT98101824 T AT 98101824T AT 98101824 T AT98101824 T AT 98101824T AT E280435 T1 ATE280435 T1 AT E280435T1
- Authority
- AT
- Austria
- Prior art keywords
- wafer
- rotating rods
- ultrasonic
- processing bath
- semiconductor plates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9021796A JPH10223585A (ja) | 1997-02-04 | 1997-02-04 | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE280435T1 true ATE280435T1 (de) | 2004-11-15 |
Family
ID=12065023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98101824T ATE280435T1 (de) | 1997-02-04 | 1998-02-03 | Vorrichtung und verfahren zur behandlung von halbleiter-plättchen |
Country Status (11)
Country | Link |
---|---|
US (1) | US6337030B1 (de) |
EP (1) | EP0856873B1 (de) |
JP (1) | JPH10223585A (de) |
KR (1) | KR100416963B1 (de) |
CN (1) | CN1108632C (de) |
AT (1) | ATE280435T1 (de) |
AU (1) | AU722096B2 (de) |
CA (1) | CA2228571C (de) |
DE (1) | DE69827051T2 (de) |
SG (1) | SG73497A1 (de) |
TW (1) | TW473863B (de) |
Families Citing this family (50)
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JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
US6767840B1 (en) * | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
JP2000124183A (ja) * | 1998-10-19 | 2000-04-28 | Memc Kk | シリコンウェーハ洗浄用キャリア |
US6520191B1 (en) | 1998-10-19 | 2003-02-18 | Memc Electronic Materials, Inc. | Carrier for cleaning silicon wafers |
US6412503B1 (en) * | 1999-06-01 | 2002-07-02 | Applied Materials, Inc. | Magnetically coupled substrate roller |
DE19934300C2 (de) * | 1999-07-21 | 2002-02-07 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten |
EP1139396A3 (de) * | 2000-03-31 | 2003-08-27 | Texas Instruments Incorporated | Haltevorrichtung und Verfahren für einheitliche stromlose Metallabscheidung auf Anschlussflächen integrierter Schaltungen |
US20030181042A1 (en) * | 2002-03-19 | 2003-09-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching uniformity in wet bench tools |
US20030211427A1 (en) * | 2002-05-07 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thick film photoresist stripping |
KR100710160B1 (ko) * | 2002-10-07 | 2007-04-20 | 엘지.필립스 엘시디 주식회사 | 유리기판 파손방지용 카세트 |
US7040330B2 (en) * | 2003-02-20 | 2006-05-09 | Lam Research Corporation | Method and apparatus for megasonic cleaning of patterned substrates |
JP4162524B2 (ja) * | 2003-03-27 | 2008-10-08 | 大日本スクリーン製造株式会社 | 基板処理方法およびその装置 |
US20040238119A1 (en) * | 2003-05-26 | 2004-12-02 | Ching-Yu Chang | [apparatus and method for etching silicon nitride thin film ] |
JP4509501B2 (ja) * | 2003-07-31 | 2010-07-21 | Sumco Techxiv株式会社 | 円板状部材のエッチング方法及び装置 |
US7415985B2 (en) * | 2003-09-24 | 2008-08-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning and drying apparatus |
US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
US7612483B2 (en) * | 2004-02-27 | 2009-11-03 | Georgia Tech Research Corporation | Harmonic cMUT devices and fabrication methods |
CN100452529C (zh) * | 2004-03-18 | 2009-01-14 | 松下电器产业株式会社 | 电力系统及其管理方法 |
US20050211379A1 (en) * | 2004-03-29 | 2005-09-29 | Hung-Wen Su | Apparatus and method for removing metal from wafer edge |
KR100604051B1 (ko) * | 2004-06-30 | 2006-07-24 | 동부일렉트로닉스 주식회사 | 게이트 산화막의 전세정방법 |
KR100644054B1 (ko) * | 2004-12-29 | 2006-11-10 | 동부일렉트로닉스 주식회사 | 세정 장치 및 게이트 산화막의 전세정 방법 |
US7730898B2 (en) | 2005-03-01 | 2010-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer lifter |
US7531426B2 (en) * | 2005-08-19 | 2009-05-12 | Honeywell International Inc. | Approach to high temperature wafer processing |
JP4705517B2 (ja) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
KR100766417B1 (ko) | 2006-07-11 | 2007-10-12 | 이기정 | 수납 부재 및 이를 포함하는 박판화 장치 |
DE202006020339U1 (de) * | 2006-12-15 | 2008-04-10 | Rena Sondermaschinen Gmbh | Vorrichtung zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben |
US8327861B2 (en) | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
KR20100050403A (ko) * | 2008-11-04 | 2010-05-13 | 주식회사 실트론 | 대상물의 습식 처리 장치 및 방법과 이에 사용되는 유체 확산판 |
CN101844111A (zh) * | 2009-04-08 | 2010-09-29 | 佛山市兴民科技有限公司 | 一种超声浮选方法及其装置和用途 |
KR101009584B1 (ko) | 2010-11-10 | 2011-01-20 | 주식회사 에이에스이 | 웨이퍼 세정장치 |
JP5696491B2 (ja) * | 2011-01-20 | 2015-04-08 | 株式会社Sumco | ウェーハ洗浄装置及び洗浄方法 |
JP2012178458A (ja) * | 2011-02-25 | 2012-09-13 | Fujitsu Ltd | 半導体装置の製造方法及び半導体基板の洗浄方法 |
CN102787315B (zh) * | 2011-05-19 | 2015-01-07 | 昆山西钛微电子科技有限公司 | 单片杯式旋转蚀刻装置 |
DE102012214316A1 (de) | 2012-08-10 | 2014-02-13 | Siltronic Ag | Halterung für eine Vielzahl von scheibenförmigen Werkstücken |
DE102013204830B4 (de) * | 2013-03-19 | 2014-10-09 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
CN104746146A (zh) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | 一种单晶硅片的制绒方法 |
US9562291B2 (en) | 2014-01-14 | 2017-02-07 | Mei, Llc | Metal etch system |
CN104465464A (zh) * | 2014-12-16 | 2015-03-25 | 中国电子科技集团公司第四十六研究所 | 一种小尺寸硫化镉单晶片超声清洗架 |
CN105225992B (zh) * | 2015-11-03 | 2018-08-24 | 株洲南车时代电气股份有限公司 | 一种刻蚀装置及晶圆片单面刻蚀方法 |
CN106540910A (zh) * | 2016-12-09 | 2017-03-29 | 苏州爱彼光电材料有限公司 | 游星轮片清洗架 |
CN108206145B (zh) * | 2016-12-20 | 2020-05-19 | 有研半导体材料有限公司 | 一种实现相邻晶圆对转的腐蚀装置及腐蚀方法 |
JP6860447B2 (ja) * | 2017-02-15 | 2021-04-14 | キオクシア株式会社 | 基板処理装置 |
DE102018103808A1 (de) * | 2018-02-20 | 2019-08-22 | AP&S International GmbH | Vorrichtung zur stromlosen Metallisierung einer Zieloberfläche wenigstens eines Werkstücks |
US20200006093A1 (en) | 2018-06-29 | 2020-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench structure |
CN112435955B (zh) * | 2019-08-26 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | 一种晶圆裂片的支撑装置及其固定方法 |
CN111063642B (zh) * | 2019-11-20 | 2023-04-14 | 至微半导体(上海)有限公司 | 具有限位功能的活动式多轴向连杆装置 |
CN110931401B (zh) * | 2020-01-02 | 2022-06-03 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 晶圆片盒旋转装置及片盒旋转升降设备 |
CN113066753B (zh) * | 2021-03-10 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 晶片升降支撑装置及清洗设备 |
CN116598252B (zh) * | 2023-07-13 | 2023-10-03 | 南轩(天津)科技有限公司 | 一种用于硅片浸蚀均匀的旋转结构 |
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JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
SG63810A1 (en) | 1997-02-21 | 1999-03-30 | Canon Kk | Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method |
JP3847935B2 (ja) | 1998-01-09 | 2006-11-22 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
-
1997
- 1997-02-04 JP JP9021796A patent/JPH10223585A/ja not_active Withdrawn
-
1998
- 1998-01-29 US US09/015,809 patent/US6337030B1/en not_active Expired - Fee Related
- 1998-02-02 CA CA002228571A patent/CA2228571C/en not_active Expired - Fee Related
- 1998-02-03 AU AU52897/98A patent/AU722096B2/en not_active Ceased
- 1998-02-03 DE DE69827051T patent/DE69827051T2/de not_active Expired - Fee Related
- 1998-02-03 TW TW087101316A patent/TW473863B/zh not_active IP Right Cessation
- 1998-02-03 AT AT98101824T patent/ATE280435T1/de not_active IP Right Cessation
- 1998-02-03 EP EP98101824A patent/EP0856873B1/de not_active Expired - Lifetime
- 1998-02-04 SG SG1998000238A patent/SG73497A1/en unknown
- 1998-02-04 CN CN98103730A patent/CN1108632C/zh not_active Expired - Fee Related
- 1998-02-04 KR KR10-1998-0003020A patent/KR100416963B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2228571A1 (en) | 1998-08-04 |
CN1192579A (zh) | 1998-09-09 |
AU722096B2 (en) | 2000-07-20 |
EP0856873A3 (de) | 2001-08-29 |
EP0856873A2 (de) | 1998-08-05 |
DE69827051D1 (de) | 2004-11-25 |
SG73497A1 (en) | 2000-06-20 |
KR19980071052A (ko) | 1998-10-26 |
DE69827051T2 (de) | 2005-09-08 |
CN1108632C (zh) | 2003-05-14 |
US6337030B1 (en) | 2002-01-08 |
CA2228571C (en) | 2003-04-29 |
KR100416963B1 (ko) | 2004-03-26 |
AU5289798A (en) | 1998-08-06 |
TW473863B (en) | 2002-01-21 |
JPH10223585A (ja) | 1998-08-21 |
EP0856873B1 (de) | 2004-10-20 |
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