ATE326064T1 - Integriertes halbleiterscheibenprozesssystems - Google Patents
Integriertes halbleiterscheibenprozesssystemsInfo
- Publication number
- ATE326064T1 ATE326064T1 AT96909902T AT96909902T ATE326064T1 AT E326064 T1 ATE326064 T1 AT E326064T1 AT 96909902 T AT96909902 T AT 96909902T AT 96909902 T AT96909902 T AT 96909902T AT E326064 T1 ATE326064 T1 AT E326064T1
- Authority
- AT
- Austria
- Prior art keywords
- process system
- integrated semiconductor
- semiconductor disc
- disc process
- strip
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/438,261 US5672239A (en) | 1995-05-10 | 1995-05-10 | Integrated semiconductor wafer processing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE326064T1 true ATE326064T1 (de) | 2006-06-15 |
Family
ID=23739925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT96909902T ATE326064T1 (de) | 1995-05-10 | 1996-03-28 | Integriertes halbleiterscheibenprozesssystems |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5672239A (de) |
| EP (2) | EP1686615A1 (de) |
| JP (1) | JP3686678B2 (de) |
| KR (1) | KR100441637B1 (de) |
| CN (1) | CN1082243C (de) |
| AT (1) | ATE326064T1 (de) |
| CA (1) | CA2220046A1 (de) |
| DE (1) | DE69636117D1 (de) |
| WO (1) | WO1996036069A1 (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936198A (ja) | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| US6672819B1 (en) | 1995-07-19 | 2004-01-06 | Hitachi, Ltd. | Vacuum processing apparatus and semiconductor manufacturing line using the same |
| KR100218269B1 (ko) * | 1996-05-30 | 1999-09-01 | 윤종용 | 건식 에칭기의 잔류 가스 제거 장치 및 방법 |
| US6849153B2 (en) * | 1998-04-16 | 2005-02-01 | Siemens Aktiengesellschaft | Removal of post-rie polymer on A1/CU metal line |
| US6348159B1 (en) | 1999-02-15 | 2002-02-19 | First Solar, Llc | Method and apparatus for etching coated substrates |
| US6432832B1 (en) * | 1999-06-30 | 2002-08-13 | Lam Research Corporation | Method of improving the profile angle between narrow and wide features |
| JP3348700B2 (ja) * | 1999-08-19 | 2002-11-20 | 株式会社東京精密 | エッチング装置 |
| US6451158B1 (en) | 1999-12-21 | 2002-09-17 | Lam Research Corporation | Apparatus for detecting the endpoint of a photoresist stripping process |
| KR100675316B1 (ko) * | 1999-12-22 | 2007-01-26 | 엘지.필립스 엘시디 주식회사 | 세정장비 일체형 에치/스트립 장치 |
| US20010043989A1 (en) * | 2000-05-18 | 2001-11-22 | Masami Akimoto | Film forming apparatus and film forming method |
| KR100793724B1 (ko) * | 2001-05-04 | 2008-01-10 | 삼성전자주식회사 | 액정표시장치용 식각모듈 |
| WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| US6676493B1 (en) | 2001-12-26 | 2004-01-13 | Lam Research Corporation | Integrated planarization and clean wafer processing system |
| JP4195227B2 (ja) * | 2002-02-22 | 2008-12-10 | 東京エレクトロン株式会社 | 被処理体の導入ポート構造 |
| US6921555B2 (en) | 2002-08-06 | 2005-07-26 | Tegal Corporation | Method and system for sequential processing in a two-compartment chamber |
| US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
| KR100441875B1 (ko) * | 2003-06-02 | 2004-07-27 | 주성엔지니어링(주) | 분리형 이송 챔버 |
| KR100505693B1 (ko) * | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법 |
| KR100770792B1 (ko) * | 2006-07-31 | 2007-10-26 | 세메스 주식회사 | 에칭부와 세정부를 겸비한 건식 에쳐 |
| CN102044407B (zh) * | 2009-10-20 | 2012-04-18 | 中芯国际集成电路制造(上海)有限公司 | 芯片的清洗方法 |
| KR101369511B1 (ko) * | 2012-01-11 | 2014-03-06 | 이완기 | 기판처리장치 및 방법 |
| US9373533B2 (en) | 2012-12-31 | 2016-06-21 | Cascade Microtech, Inc. | Systems and methods for providing wafer access in a wafer processing system |
| KR101919122B1 (ko) * | 2014-08-12 | 2018-11-15 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59186326A (ja) * | 1983-04-06 | 1984-10-23 | Hitachi Ltd | プラズマ処理装置 |
| US4693777A (en) * | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
| ATE102397T1 (de) * | 1986-12-19 | 1994-03-15 | Applied Materials Inc | Integriertes bearbeitungssystem mit vielfachkammer. |
| JPS63303060A (ja) * | 1987-05-30 | 1988-12-09 | Tokuda Seisakusho Ltd | 真空処理装置 |
| US4851101A (en) * | 1987-09-18 | 1989-07-25 | Varian Associates, Inc. | Sputter module for modular wafer processing machine |
| EP0408216A3 (en) * | 1989-07-11 | 1991-09-18 | Hitachi, Ltd. | Method for processing wafers and producing semiconductor devices and apparatus for producing the same |
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
| KR100230697B1 (ko) * | 1992-02-18 | 1999-11-15 | 이노우에 쥰이치 | 감압 처리 장치 |
-
1995
- 1995-05-10 US US08/438,261 patent/US5672239A/en not_active Expired - Lifetime
-
1996
- 1996-03-28 AT AT96909902T patent/ATE326064T1/de not_active IP Right Cessation
- 1996-03-28 WO PCT/US1996/004433 patent/WO1996036069A1/en active IP Right Grant
- 1996-03-28 CN CN96193829A patent/CN1082243C/zh not_active Expired - Fee Related
- 1996-03-28 CA CA002220046A patent/CA2220046A1/en not_active Abandoned
- 1996-03-28 KR KR1019970707898A patent/KR100441637B1/ko not_active IP Right Cessation
- 1996-03-28 EP EP06076007A patent/EP1686615A1/de not_active Withdrawn
- 1996-03-28 EP EP96909902A patent/EP0826231B1/de not_active Expired - Lifetime
- 1996-03-28 JP JP53405296A patent/JP3686678B2/ja not_active Expired - Lifetime
- 1996-03-28 DE DE69636117T patent/DE69636117D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3686678B2 (ja) | 2005-08-24 |
| CN1184556A (zh) | 1998-06-10 |
| JPH11505669A (ja) | 1999-05-21 |
| EP0826231A1 (de) | 1998-03-04 |
| EP0826231B1 (de) | 2006-05-10 |
| DE69636117D1 (de) | 2006-06-14 |
| CN1082243C (zh) | 2002-04-03 |
| WO1996036069A1 (en) | 1996-11-14 |
| EP1686615A1 (de) | 2006-08-02 |
| US5672239A (en) | 1997-09-30 |
| KR100441637B1 (ko) | 2004-11-06 |
| EP0826231A4 (de) | 2004-05-19 |
| KR19990008372A (ko) | 1999-01-25 |
| CA2220046A1 (en) | 1996-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE326064T1 (de) | Integriertes halbleiterscheibenprozesssystems | |
| TW376550B (en) | Apparatus for and method of cleaning objects to be processed | |
| EP0234387A3 (en) | Method of removing photoresist on a semiconductor wafer | |
| WO2003021642A3 (en) | Method and apparatus for processing a wafer | |
| EP0673545A4 (de) | Verfahren und einrichtung zum ätzen von halbleiterwarfern. | |
| DE69628903D1 (de) | Plasmareaktoren für die Bearbeitung von Halbleiterscheiben | |
| KR900019192A (ko) | 반도체 웨이퍼의 다단 진공처리장치 및 방법 | |
| WO2003038888A3 (en) | Method and apparatus for cascade control using integrated metrology | |
| EP0767409A3 (de) | Verfahren zum Belichten der Randbereiche eines Halbleiterwafers zum Entfernen von nicht benötigten Resist, und Gerät zur Ausführung des Verfahrens | |
| DE69630496D1 (de) | Verfahren zum Reinigen einer alkalischen Lösung und Methode zum Ätzen von Halbleiterscheiben | |
| EP0321281A3 (de) | Vorrichtung und Verfahren zur Tauchentwicklung und Spülung | |
| KR910007100A (ko) | 기판 처리 장치 및 기판 처리방법 | |
| DE59805067D1 (de) | Verfahren zum Ätzen von Halbleiterscheiben | |
| EP1191400A3 (de) | Methode zur Herstellung einer Prägematrize | |
| JPS5434751A (en) | Washing method for silicon wafer | |
| KR970700935A (ko) | 반도체 가공 개량 방법(methods for improving semiconductor processing) | |
| TW316717U (en) | Method of stripping a nitride layer from a wafer and wet etching apparatus using the same | |
| TW374853B (en) | Dry etching method of thin film and method for manufacturing thin film semiconductor device | |
| DE69112592D1 (de) | Trockenätzprozess für Galliumarsenid. | |
| KR200195087Y1 (ko) | 반도체웨이퍼의웨트에칭장치 | |
| KR970063420A (ko) | 사진 공정의 웨이퍼 전처리 방법 | |
| JPS6453546A (en) | Method and apparatus for dry etching | |
| KR970015307U (ko) | 반도체 웨이퍼 에칭장치 | |
| KR960027787U (ko) | 반도체 제조공정용 웨이퍼 건조장치 | |
| KR970015296U (ko) | 반도체 웨이퍼 식각장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |