JPS6453546A - Method and apparatus for dry etching - Google Patents

Abstract

PURPOSE:To form a wiring part whose defect is reduced by providing the following: a first etching chamber used to etch a wafer; a cleaning device used to clean the etched wafer; a second etching chamber used to etch the wafer cleaned in the cleaning device. CONSTITUTION:An etching operation is executed in a first etching chamber 1 until it reaches a substrate 11. A wiring material 12 is removed at a window 16 to which no foreign substance has been adhered; the wiring material 12 is not etched and is left at a part to which a foreign substance 14 has adhered. A wafer 6 which has been etched in the first etching chamber 1 is transferred to a cleaning and drying device 2 by using a transfer device 4; the wafer is cleaned; the foreign substance 14 is removed. After that, the cleaned wafer 6 is transferred to a second etching chamber 3 by using a transfer device 5; if the wafer is etched again by using an identical mask 13, the wiring material 12 at a part X which was not etched last time is etched. By this setup, a normal wiring pattern where both X and Y have been etched and which does not contain any defect is formed.