KR900019192A - 반도체 웨이퍼의 다단 진공처리장치 및 방법 - Google Patents

반도체 웨이퍼의 다단 진공처리장치 및 방법

Info

Publication number
KR900019192A
KR900019192A KR1019900007201A KR900007201A KR900019192A KR 900019192 A KR900019192 A KR 900019192A KR 1019900007201 A KR1019900007201 A KR 1019900007201A KR 900007201 A KR900007201 A KR 900007201A KR 900019192 A KR900019192 A KR 900019192A
Authority
KR
South Korea
Prior art keywords
processing apparatus
semiconductor wafer
vacuum processing
stage vacuum
stage
Prior art date
Application number
KR1019900007201A
Other languages
English (en)
Other versions
KR0165112B1 (ko
Inventor
테프맨 애비
그룬스 하워드
소메크 새손
메이단 단
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23395873&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR900019192(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR900019192A publication Critical patent/KR900019192A/ko
Application granted granted Critical
Publication of KR0165112B1 publication Critical patent/KR0165112B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1019900007201A 1989-05-19 1990-05-19 반도체 웨이퍼의 다단 진공처리장치 및 방법 KR0165112B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35500889A 1989-05-19 1989-05-19
US355,008 1989-05-19

Publications (2)

Publication Number Publication Date
KR900019192A true KR900019192A (ko) 1990-12-24
KR0165112B1 KR0165112B1 (ko) 1999-02-01

Family

ID=23395873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007201A KR0165112B1 (ko) 1989-05-19 1990-05-19 반도체 웨이퍼의 다단 진공처리장치 및 방법

Country Status (4)

Country Link
EP (2) EP0398365B1 (ko)
JP (1) JPH0793348B2 (ko)
KR (1) KR0165112B1 (ko)
DE (1) DE69028440T2 (ko)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
USRE39756E1 (en) 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USRE39824E1 (en) 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors
JP2595132B2 (ja) * 1990-11-26 1997-03-26 株式会社日立製作所 真空処理装置
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
WO1996025760A1 (fr) * 1995-02-15 1996-08-22 Hitachi, Ltd. Procede et machine de fabrication de semiconducteurs
JP3769802B2 (ja) * 1996-02-09 2006-04-26 株式会社日立製作所 半導体装置の製造方法
DE19628102A1 (de) * 1996-07-12 1998-01-15 Bayerische Motoren Werke Ag Vakuumbeschichtungsanlage mit einer Beschichtungskammer und zumindest einer Quellenkammer
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6176668B1 (en) 1998-05-20 2001-01-23 Applied Komatsu Technology, Inc. In-situ substrate transfer shuttle
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US7077159B1 (en) 1998-12-23 2006-07-18 Applied Materials, Inc. Processing apparatus having integrated pumping system
DE19922167A1 (de) * 1999-05-12 2000-11-16 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6440261B1 (en) * 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
EP1126508A3 (en) * 2000-02-16 2005-03-30 Applied Materials, Inc. Processing apparatus having integrated pumping system
KR100367455B1 (ko) * 2000-03-21 2003-01-14 일진나노텍 주식회사 탄소나노튜브 합성용 다중 진공챔버 플라즈마화학기상증착장치 및 이 장치를 이용한 탄소나노튜브 합성방법
KR100375135B1 (ko) * 2000-10-13 2003-03-08 주식회사 에버테크 웨이퍼 프로세스 방법
KR20020071393A (ko) * 2001-03-06 2002-09-12 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
KR20020072449A (ko) * 2001-03-10 2002-09-16 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
KR20020076039A (ko) * 2001-03-27 2002-10-09 주식회사 아이피에스 자동연속 웨이퍼가공시스템 및 그를 이용한 웨이퍼가공방법
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP2002324829A (ja) * 2001-07-13 2002-11-08 Tokyo Electron Ltd 処理システム
JP4821074B2 (ja) * 2001-08-31 2011-11-24 東京エレクトロン株式会社 処理システム
US7316966B2 (en) 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
JP4222068B2 (ja) 2003-03-10 2009-02-12 東京エレクトロン株式会社 被処理体の搬送装置
JP3609077B1 (ja) * 2003-07-09 2005-01-12 東京エレクトロン株式会社 高圧熱処理装置
US7207766B2 (en) 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US20060045668A1 (en) * 2004-07-19 2006-03-02 Grabowski Al W System for handling of wafers within a process tool
US7845891B2 (en) 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
JP2009062604A (ja) * 2007-09-10 2009-03-26 Tokyo Electron Ltd 真空処理システムおよび基板搬送方法
KR100866094B1 (ko) * 2008-04-28 2008-10-30 주식회사 싸이맥스 독립적으로 구동하는 적층식 이중 아암 로봇
TWI532114B (zh) * 2009-11-12 2016-05-01 Hitachi High Tech Corp Vacuum processing device and operation method of vacuum processing device
US20130192761A1 (en) * 2012-01-31 2013-08-01 Joseph Yudovsky Rotary Substrate Processing System
GB2514974A (en) * 2012-03-30 2014-12-10 Canon Anelva Corp Plasma processing apparatus and substrate processing system
CN104752152B (zh) * 2013-12-29 2018-07-06 北京北方华创微电子装备有限公司 一种沟槽刻蚀方法及刻蚀装置
CN107942918B (zh) * 2017-12-22 2023-04-18 大连华锐重工集团股份有限公司 自适应式干式真空机械泵电控系统及控制方法
CN109161867B (zh) * 2018-10-11 2023-08-08 中国科学技术大学 可分离式真空互联系统
US11637030B2 (en) 2019-06-18 2023-04-25 Kla Corporation Multi-stage, multi-zone substrate positioning systems

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3788973T2 (de) * 1986-04-04 1994-08-11 Materials Research Corp Verfahren und Vorrichtung zur Handhabung und Behandlung von scheibenartigen Materialien.
US4715764A (en) * 1986-04-28 1987-12-29 Varian Associates, Inc. Gate valve for wafer processing system
WO1987007309A1 (en) * 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus with automatic cleaning means and method of use
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
DE3789212T2 (de) * 1986-12-19 1994-06-01 Applied Materials Inc Integriertes Bearbeitungssystem mit Vielfachkammer.

Also Published As

Publication number Publication date
KR0165112B1 (ko) 1999-02-01
EP0398365A2 (en) 1990-11-22
JPH0319252A (ja) 1991-01-28
DE69028440D1 (de) 1996-10-17
EP0684630A2 (en) 1995-11-29
EP0684630A3 (ko) 1996-01-03
EP0398365A3 (en) 1991-06-12
DE69028440T2 (de) 1997-02-20
JPH0793348B2 (ja) 1995-10-09
EP0398365B1 (en) 1996-09-11

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