US5731565A
(en)
*
|
1995-07-27 |
1998-03-24 |
Lam Research Corporation |
Segmented coil for generating plasma in plasma processing equipment
|
US5983828A
(en)
*
|
1995-10-13 |
1999-11-16 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
US6253704B1
(en)
|
1995-10-13 |
2001-07-03 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
US6794301B2
(en)
|
1995-10-13 |
2004-09-21 |
Mattson Technology, Inc. |
Pulsed plasma processing of semiconductor substrates
|
US6264812B1
(en)
*
|
1995-11-15 |
2001-07-24 |
Applied Materials, Inc. |
Method and apparatus for generating a plasma
|
US5964949A
(en)
*
|
1996-03-06 |
1999-10-12 |
Mattson Technology, Inc. |
ICP reactor having a conically-shaped plasma-generating section
|
KR100489918B1
(ko)
*
|
1996-05-09 |
2005-08-04 |
어플라이드 머티어리얼스, 인코포레이티드 |
플라즈마발생및스퍼터링용코일
|
US6368469B1
(en)
|
1996-05-09 |
2002-04-09 |
Applied Materials, Inc. |
Coils for generating a plasma and for sputtering
|
US6254746B1
(en)
|
1996-05-09 |
2001-07-03 |
Applied Materials, Inc. |
Recessed coil for generating a plasma
|
US6268700B1
(en)
*
|
1996-06-10 |
2001-07-31 |
Lam Research Corporation |
Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
|
JP2845199B2
(ja)
*
|
1996-06-14 |
1999-01-13 |
日本電気株式会社 |
ドライエッチング装置およびドライエッチング方法
|
TW349234B
(en)
*
|
1996-07-15 |
1999-01-01 |
Applied Materials Inc |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US5800621A
(en)
*
|
1997-02-10 |
1998-09-01 |
Applied Materials, Inc. |
Plasma source for HDP-CVD chamber
|
TW376547B
(en)
*
|
1997-03-27 |
1999-12-11 |
Matsushita Electric Ind Co Ltd |
Method and apparatus for plasma processing
|
US6210539B1
(en)
*
|
1997-05-14 |
2001-04-03 |
Applied Materials, Inc. |
Method and apparatus for producing a uniform density plasma above a substrate
|
US6361661B2
(en)
|
1997-05-16 |
2002-03-26 |
Applies Materials, Inc. |
Hybrid coil design for ionized deposition
|
US6077402A
(en)
*
|
1997-05-16 |
2000-06-20 |
Applied Materials, Inc. |
Central coil design for ionized metal plasma deposition
|
US6099648A
(en)
*
|
1997-08-06 |
2000-08-08 |
Applied Materials, Inc. |
Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
|
WO1999026277A1
(en)
|
1997-11-17 |
1999-05-27 |
Mattson Technology, Inc. |
Systems and methods for plasma enhanced processing of semiconductor wafers
|
US5994236A
(en)
*
|
1998-01-23 |
1999-11-30 |
Ogle; John Seldon |
Plasma source with process nonuniformity improved using ferromagnetic cores
|
US6506287B1
(en)
|
1998-03-16 |
2003-01-14 |
Applied Materials, Inc. |
Overlap design of one-turn coil
|
US6146508A
(en)
*
|
1998-04-22 |
2000-11-14 |
Applied Materials, Inc. |
Sputtering method and apparatus with small diameter RF coil
|
US6164241A
(en)
*
|
1998-06-30 |
2000-12-26 |
Lam Research Corporation |
Multiple coil antenna for inductively-coupled plasma generation systems
|
US6660134B1
(en)
|
1998-07-10 |
2003-12-09 |
Applied Materials, Inc. |
Feedthrough overlap coil
|
US6139679A
(en)
*
|
1998-10-15 |
2000-10-31 |
Applied Materials, Inc. |
Coil and coil feedthrough
|
US6217718B1
(en)
|
1999-02-17 |
2001-04-17 |
Applied Materials, Inc. |
Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
|
TW469534B
(en)
|
1999-02-23 |
2001-12-21 |
Matsushita Electric Ind Co Ltd |
Plasma processing method and apparatus
|
US6229264B1
(en)
*
|
1999-03-31 |
2001-05-08 |
Lam Research Corporation |
Plasma processor with coil having variable rf coupling
|
US6237527B1
(en)
|
1999-08-06 |
2001-05-29 |
Axcelis Technologies, Inc. |
System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
|
US6447635B1
(en)
*
|
1999-08-24 |
2002-09-10 |
Bethel Material Research |
Plasma processing system and system using wide area planar antenna
|
TW503442B
(en)
*
|
2000-02-29 |
2002-09-21 |
Applied Materials Inc |
Coil and coil support for generating a plasma
|
JP3903730B2
(ja)
*
|
2001-04-04 |
2007-04-11 |
松下電器産業株式会社 |
エッチング方法
|
KR100408405B1
(ko)
*
|
2001-05-03 |
2003-12-06 |
삼성전자주식회사 |
반도체 소자의 제조 장치
|
WO2002099863A1
(fr)
*
|
2001-06-01 |
2002-12-12 |
Tokyo Electron Limited |
Dispositif de traitement de plasma
|
US7571697B2
(en)
*
|
2001-09-14 |
2009-08-11 |
Lam Research Corporation |
Plasma processor coil
|
KR20040005161A
(ko)
*
|
2002-07-08 |
2004-01-16 |
어댑티브프라즈마테크놀로지 주식회사 |
플라즈마 발생장치
|
TWI225667B
(en)
*
|
2002-03-25 |
2004-12-21 |
Adaptive Plasma Tech Corp |
Plasma etching method and apparatus for manufacturing a semiconductor device
|
US20030180971A1
(en)
*
|
2002-03-25 |
2003-09-25 |
Adaptive Plasma Technology Corporation |
Plasma etching method and apparatus for manufacturing a semiconductor device
|
JP3823069B2
(ja)
*
|
2002-06-12 |
2006-09-20 |
株式会社アルバック |
磁気中性線放電プラズマ処理装置
|
US6852639B2
(en)
*
|
2002-07-31 |
2005-02-08 |
Infineon Technologies Ag |
Etching processing method for a material layer
|
JP2004200307A
(ja)
*
|
2002-12-17 |
2004-07-15 |
Tokyo Electron Ltd |
プラズマ処理装置
|
EP1480250A1
(en)
*
|
2003-05-22 |
2004-11-24 |
HELYSSEN S.à.r.l. |
A high density plasma reactor and RF-antenna therefor
|
WO2004108979A1
(ja)
*
|
2003-06-02 |
2004-12-16 |
Shincron Co., Ltd. |
薄膜形成装置及び薄膜形成方法
|
US20040261718A1
(en)
*
|
2003-06-26 |
2004-12-30 |
Kim Nam Hun |
Plasma source coil for generating plasma and plasma chamber using the same
|
US6969953B2
(en)
*
|
2003-06-30 |
2005-11-29 |
General Electric Company |
System and method for inductive coupling of an expanding thermal plasma
|
JP4563729B2
(ja)
|
2003-09-04 |
2010-10-13 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
WO2005062361A1
(en)
*
|
2003-12-22 |
2005-07-07 |
Adaptive Plasma Technology Corporation |
Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source
|
KR100584122B1
(ko)
|
2004-03-25 |
2006-05-29 |
에이피티씨 주식회사 |
플라즈마 소스코일을 갖는 플라즈마 챔버 및 이를 이용한웨이퍼 식각방법
|
JP2008513993A
(ja)
*
|
2004-09-14 |
2008-05-01 |
アダプティーブ プラズマ テクノロジー コープ |
適応型プラズマソース及びこれを用いた半導体ウェハー処理方法
|
US7396431B2
(en)
*
|
2004-09-30 |
2008-07-08 |
Tokyo Electron Limited |
Plasma processing system for treating a substrate
|
US7713432B2
(en)
|
2004-10-04 |
2010-05-11 |
David Johnson |
Method and apparatus to improve plasma etch uniformity
|
KR100774521B1
(ko)
|
2005-07-19 |
2007-11-08 |
주식회사 디엠에스 |
다중 안테나 코일군이 구비된 유도결합 플라즈마 반응장치
|
JP2007214262A
(ja)
*
|
2006-02-08 |
2007-08-23 |
Matsushita Electric Ind Co Ltd |
プラズマ処理方法及び装置
|
JP4888076B2
(ja)
*
|
2006-11-17 |
2012-02-29 |
パナソニック株式会社 |
プラズマエッチング装置
|
US10685815B2
(en)
*
|
2009-08-25 |
2020-06-16 |
Canon Anelva Corporation |
Plasma processing apparatus and device manufacturing method
|
JP5606821B2
(ja)
*
|
2010-08-04 |
2014-10-15 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
JP5685094B2
(ja)
*
|
2011-01-25 |
2015-03-18 |
東京エレクトロン株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
JP6348321B2
(ja)
*
|
2013-05-17 |
2018-06-27 |
キヤノンアネルバ株式会社 |
エッチング装置
|
US9947516B2
(en)
|
2014-06-03 |
2018-04-17 |
Tokyo Electron Limited |
Top dielectric quartz plate and slot antenna concept
|
US20160118284A1
(en)
*
|
2014-10-22 |
2016-04-28 |
Panasonic Intellectual Property Management Co., Ltd. |
Plasma processing apparatus
|
JP6406631B2
(ja)
*
|
2014-10-22 |
2018-10-17 |
パナソニックIpマネジメント株式会社 |
プラズマ処理装置
|
KR101798371B1
(ko)
*
|
2016-04-27 |
2017-11-16 |
(주)브이앤아이솔루션 |
유도결합 플라즈마 처리장치의 가스공급구조
|
KR102528687B1
(ko)
*
|
2016-09-06 |
2023-05-08 |
한국전자통신연구원 |
전자기 밴드갭 구조물 및 그 제조 방법
|
KR102408720B1
(ko)
*
|
2017-06-07 |
2022-06-14 |
삼성전자주식회사 |
상부 돔을 포함하는 반도체 공정 챔버
|
JP7241961B2
(ja)
*
|
2020-03-11 |
2023-03-17 |
株式会社Kokusai Electric |
基板処理装置、半導体装置の製造方法及びプログラム
|
CN114023622B
(zh)
*
|
2022-01-05 |
2022-04-08 |
盛吉盛(宁波)半导体科技有限公司 |
电感耦合等离子体装置及半导体薄膜设备
|