KR960012315A - 반도체 장치의 제조에 사용되는 플라즈마 처리장치 및 플라즈마 처리방법 - Google Patents

반도체 장치의 제조에 사용되는 플라즈마 처리장치 및 플라즈마 처리방법 Download PDF

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Publication number
KR960012315A
KR960012315A KR1019950030564A KR19950030564A KR960012315A KR 960012315 A KR960012315 A KR 960012315A KR 1019950030564 A KR1019950030564 A KR 1019950030564A KR 19950030564 A KR19950030564 A KR 19950030564A KR 960012315 A KR960012315 A KR 960012315A
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South Korea
Prior art keywords
plasma processing
manufacture
semiconductor devices
method used
processing apparatus
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Application number
KR1019950030564A
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English (en)
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KR0162530B1 (ko
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Publication of KR960012315A publication Critical patent/KR960012315A/ko
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Publication of KR0162530B1 publication Critical patent/KR0162530B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1019950030564A 1994-09-16 1995-09-16 반도체 장치의 제조에 사용되는 플라즈마 처리장치 및 플라즈마 처리방법 KR0162530B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-259860 1994-09-16
JP6259860A JP2770753B2 (ja) 1994-09-16 1994-09-16 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR960012315A true KR960012315A (ko) 1996-04-20
KR0162530B1 KR0162530B1 (ko) 1999-02-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950030564A KR0162530B1 (ko) 1994-09-16 1995-09-16 반도체 장치의 제조에 사용되는 플라즈마 처리장치 및 플라즈마 처리방법

Country Status (3)

Country Link
US (1) US5690781A (ko)
JP (1) JP2770753B2 (ko)
KR (1) KR0162530B1 (ko)

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KR100383256B1 (ko) * 2000-08-04 2003-05-09 주식회사 래디언테크 고밀도 플라즈마 에칭 설비
KR100566999B1 (ko) * 1997-06-04 2006-06-16 가부시키가이샤 히다치 고쿠사이 덴키 기판처리장치 및 기판처리방법

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JP2008513993A (ja) * 2004-09-14 2008-05-01 アダプティーブ プラズマ テクノロジー コープ 適応型プラズマソース及びこれを用いた半導体ウェハー処理方法
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JP4888076B2 (ja) * 2006-11-17 2012-02-29 パナソニック株式会社 プラズマエッチング装置
US10685815B2 (en) * 2009-08-25 2020-06-16 Canon Anelva Corporation Plasma processing apparatus and device manufacturing method
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5685094B2 (ja) * 2011-01-25 2015-03-18 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6348321B2 (ja) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
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KR102528687B1 (ko) * 2016-09-06 2023-05-08 한국전자통신연구원 전자기 밴드갭 구조물 및 그 제조 방법
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KR100566999B1 (ko) * 1997-06-04 2006-06-16 가부시키가이샤 히다치 고쿠사이 덴키 기판처리장치 및 기판처리방법
KR100383256B1 (ko) * 2000-08-04 2003-05-09 주식회사 래디언테크 고밀도 플라즈마 에칭 설비

Also Published As

Publication number Publication date
JPH0888190A (ja) 1996-04-02
US5690781A (en) 1997-11-25
KR0162530B1 (ko) 1999-02-01
JP2770753B2 (ja) 1998-07-02

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