JP5685094B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
- Publication number
- JP5685094B2 JP5685094B2 JP2011013381A JP2011013381A JP5685094B2 JP 5685094 B2 JP5685094 B2 JP 5685094B2 JP 2011013381 A JP2011013381 A JP 2011013381A JP 2011013381 A JP2011013381 A JP 2011013381A JP 5685094 B2 JP5685094 B2 JP 5685094B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- plasma processing
- generation chamber
- processing apparatus
- antenna element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 40
- 229910052739 hydrogen Inorganic materials 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 37
- 238000005192 partition Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 238000009616 inductively coupled plasma Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 13
- -1 hydrogen ions Chemical class 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (10)
- 水素を含む処理ガスをプラズマ励起させて発生した水素ラジカルを被処理基板に作用させてプラズマ処理を施すプラズマ処理装置であって、
前記処理ガスを励起させてプラズマを生成するプラズマ生成室と、
前記プラズマ生成室に連通するプラズマ処理室と、
前記プラズマ処理室内に配置され、前記被処理基板を載置する載置台と、
前記プラズマ生成室の天井部に設けられた板状の誘電体窓の外側に配設された平面状の高周波アンテナと、
前記プラズマ生成室に誘導結合プラズマを生成するための高周波電力を、前記高周波アンテナに印加する高周波電源と、
前記プラズマ生成室と前記プラズマ処理室とを隔てる隔壁部材と、
を備え、
前記高周波アンテナは、両端を開放するとともに中間部を接地し、前記高周波電源からの高周波電力の1/2波長で共振するように構成したアンテナ素子を具備し、
前記隔壁部材は、前記水素ラジカルを通すための複数の開口を有し紫外線が通過しない絶縁材料からなる複数の板状部材を夫々間隔を設けて重ね、かつ、前記板状部材の前記開口は夫々他の前記板状部材の前記開口と重ならないようにずらして配置して構成されており、
前記アンテナ素子の中心と前記誘電体窓の前記プラズマ生成室側の面との間の距離が、55mm〜90mmとされている
ことを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置であって、
前記誘電体窓の前記プラズマ生成室側の面と前記隔壁部材の前記プラズマ生成室側の面との間の距離が、50mm〜110mmとされている
ことを特徴とするプラズマ処理装置。 - 請求項は1又は2記載のプラズマ処理装置であって、
前記誘電体窓が、石英又はセラミックスから構成されている
ことを特徴とするプラズマ処理装置。 - 請求項1〜3いずれか1項記載のプラズマ処理装置であって、
前記アンテナ素子が渦巻き状に形成されている
ことを特徴とするプラズマ処理装置。 - 請求項1〜4いずれか1項記載のプラズマ処理装置であって、
前記開口がスリット状に形成されている
ことを特徴とするプラズマ処理装置。 - 水素を含む処理ガスをプラズマ励起させて発生した水素ラジカルを被処理基板に作用させてプラズマ処理を施すプラズマ処理方法であって、
前記処理ガスを励起させてプラズマを生成するプラズマ生成室と、
前記プラズマ生成室に連通するプラズマ処理室と、
前記プラズマ処理室内に配置され、前記被処理基板を載置する載置台と、
前記プラズマ生成室の天井部に設けられた板状の誘電体窓の外側に配設された平面状の高周波アンテナと、
前記プラズマ生成室に誘導結合プラズマを生成するための高周波電力を、前記高周波アンテナに印加する高周波電源と、
前記プラズマ生成室と前記プラズマ処理室とを隔てる隔壁部材と、
を備え、
前記高周波アンテナは、両端を開放するとともに中間部を接地し、前記高周波電源からの高周波電力の1/2波長で共振するように構成したアンテナ素子を具備し、
前記隔壁部材は、前記水素ラジカルを通すための複数の開口を有し、紫外線が通過しない絶縁材料からなる複数の板状部材を夫々間隔を設けて重ね、かつ、前記板状部材の前記開口は夫々他の前記板状部材の前記開口と重ならないようにずらして配置して構成されており、
前記アンテナ素子の中心と前記誘電体窓の前記プラズマ生成室側の面との間の距離が、55mm〜90mmとされている
プラズマ処理装置を用いて前記被処理基板にプラズマ処理を施す
ことを特徴とするプラズマ処理方法。 - 請求項6記載のプラズマ処理方法であって、
前記誘電体窓の前記プラズマ生成室側の面と前記隔壁部材の前記プラズマ生成室側の面との間の距離が、50mm〜110mmとされている
ことを特徴とするプラズマ処理方法。 - 請求項6又は7記載のプラズマ処理方法であって、
前記誘電体窓が、石英又はセラミックスから構成されている
ことを特徴とするプラズマ処理方法。 - 請求項6〜8いずれか1項記載のプラズマ処理方法であって、
前記アンテナ素子が渦巻き状に形成されている
ことを特徴とするプラズマ処理方法。 - 請求項6〜9いずれか1項記載のプラズマ処理方法であって、
前記開口がスリット状に形成されている
ことを特徴とするプラズマ処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011013381A JP5685094B2 (ja) | 2011-01-25 | 2011-01-25 | プラズマ処理装置及びプラズマ処理方法 |
KR1020120006776A KR20120086264A (ko) | 2011-01-25 | 2012-01-20 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US13/357,095 US20120190207A1 (en) | 2011-01-25 | 2012-01-24 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011013381A JP5685094B2 (ja) | 2011-01-25 | 2011-01-25 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012156261A JP2012156261A (ja) | 2012-08-16 |
JP5685094B2 true JP5685094B2 (ja) | 2015-03-18 |
Family
ID=46544484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011013381A Active JP5685094B2 (ja) | 2011-01-25 | 2011-01-25 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120190207A1 (ja) |
JP (1) | JP5685094B2 (ja) |
KR (1) | KR20120086264A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10595365B2 (en) * | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US9177756B2 (en) * | 2011-04-11 | 2015-11-03 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
JP6623511B2 (ja) * | 2014-11-05 | 2019-12-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101682155B1 (ko) * | 2015-04-20 | 2016-12-02 | 주식회사 유진테크 | 기판 처리 장치 |
US20170207077A1 (en) * | 2016-01-15 | 2017-07-20 | Mattson Technology, Inc. | Variable Pattern Separation Grid for Plasma Chamber |
US9978621B1 (en) * | 2016-11-14 | 2018-05-22 | Applied Materials, Inc. | Selective etch rate monitor |
US20220336194A1 (en) * | 2019-09-17 | 2022-10-20 | Tokyo Electron Limited | Plasma processing apparatus |
JP7507620B2 (ja) | 2020-07-02 | 2024-06-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20220102119A1 (en) * | 2020-09-25 | 2022-03-31 | Tokyo Electron Limited | Plasma processing apparatus |
KR20220094272A (ko) * | 2020-12-28 | 2022-07-06 | 세메스 주식회사 | 기판 처리 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684837A (ja) * | 1992-09-04 | 1994-03-25 | Mitsubishi Electric Corp | プラズマ処理装置 |
JPH06177058A (ja) * | 1992-12-10 | 1994-06-24 | Kokusai Electric Co Ltd | プラズマ発生装置 |
US5531834A (en) * | 1993-07-13 | 1996-07-02 | Tokyo Electron Kabushiki Kaisha | Plasma film forming method and apparatus and plasma processing apparatus |
JP2770753B2 (ja) * | 1994-09-16 | 1998-07-02 | 日本電気株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP3561080B2 (ja) * | 1996-04-23 | 2004-09-02 | 松下電器産業株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6335293B1 (en) * | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US6597117B2 (en) * | 2001-11-30 | 2003-07-22 | Samsung Austin Semiconductor, L.P. | Plasma coil |
US8349128B2 (en) * | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
JP4633425B2 (ja) * | 2004-09-17 | 2011-02-16 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2007088199A (ja) * | 2005-09-22 | 2007-04-05 | Canon Inc | 処理装置 |
JP2009016453A (ja) * | 2007-07-02 | 2009-01-22 | Tokyo Electron Ltd | プラズマ処理装置 |
JP5584412B2 (ja) * | 2008-12-26 | 2014-09-03 | 株式会社メイコー | プラズマ処理装置 |
JP2010192197A (ja) * | 2009-02-17 | 2010-09-02 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
-
2011
- 2011-01-25 JP JP2011013381A patent/JP5685094B2/ja active Active
-
2012
- 2012-01-20 KR KR1020120006776A patent/KR20120086264A/ko not_active Application Discontinuation
- 2012-01-24 US US13/357,095 patent/US20120190207A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120190207A1 (en) | 2012-07-26 |
KR20120086264A (ko) | 2012-08-02 |
JP2012156261A (ja) | 2012-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5685094B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP5901887B2 (ja) | プラズマ処理装置のクリーニング方法及びプラズマ処理方法 | |
JP5227245B2 (ja) | プラズマ処理装置 | |
JP7495940B2 (ja) | 高電圧フィルタアセンブリ | |
TWI804510B (zh) | 電漿處理裝置 | |
JP5584412B2 (ja) | プラズマ処理装置 | |
JP2013182966A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
US9543121B2 (en) | Inductively coupled plasma processing apparatus | |
JP6539986B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
KR101998520B1 (ko) | 플라즈마 처리 장치 및 플라즈마 발생 유닛 | |
US20170040170A1 (en) | Systems and Methods for Separately Applying Charged Plasma Constituents and Ultraviolet Light in a Mixed Mode Processing Operation | |
KR101358780B1 (ko) | 히터가 설치된 유도 결합 플라즈마 소스를 구비한 플라즈마반응기 | |
KR102278074B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP5813834B2 (ja) | プラズマ処理方法 | |
JP5097074B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
KR20140140804A (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
KR102219568B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP2010212321A (ja) | 半導体製造装置 | |
KR20210003984A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
TW202007795A (zh) | 蝕刻方法 | |
KR100980288B1 (ko) | 자기 조절 메커니즘을 구비한 플라즈마 처리 장치 | |
KR20150102921A (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
KR20080058625A (ko) | 기판 처리 장치 | |
JPH04114427A (ja) | エッチング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140123 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150113 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150116 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5685094 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |