JP2010192197A - 基板処理装置及び基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 169
- 238000003672 processing method Methods 0.000 title claims description 26
- 238000005192 partition Methods 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000000638 solvent extraction Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000002463 transducing effect Effects 0.000 claims 1
- 238000005040 ion trap Methods 0.000 abstract description 75
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000012528 membrane Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 72
- 239000001301 oxygen Substances 0.000 description 34
- 229910052760 oxygen Inorganic materials 0.000 description 34
- 150000002500 ions Chemical class 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- -1 for example Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000009966 trimming Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910005883 NiSi Inorganic materials 0.000 description 5
- 238000005108 dry cleaning Methods 0.000 description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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Abstract
【解決手段】基板処理装置10は、ウエハWを収容するチャンバ11内部をプラズマ生成室12及びウエハ処理室13に仕切るイオントラップ14と、プラズマ生成室12内に配置される高周波アンテナ15と、プラズマ生成室12内に処理ガスを導入する処理ガス導入部16と、ウエハ処理室13内に配置されてウエハWを載置し且つバイアス電圧が印加される載置台17とを備え、イオントラップ14は、プラズマ生成室12からウエハ処理室13へ向けて二重に配置された板状の上側イオントラップ板20及び下側イオントラップ板21を有し、上側イオントラップ板20及び下側イオントラップ板21のそれぞれは設置された導電体20a,21aと該導電体20a,21aの表面を覆う絶縁体からなる絶縁膜20b,21bとを有する。
【選択図】図2
Description
10 基板処理装置
11 チャンバ
12 プラズマ生成室
13 ウエハ処理室
14 イオントラップ
16 処理ガス導入部
17 載置台
20 上側イオントラップ板
20a,21a 導電体
20b,21b 絶縁膜
20c,21c 貫通孔
21 下側イオントラップ板
23 ガス吹き出し口
30 BTBAS
31,53 酸素ラジカル
32 二酸化珪素膜
45 異物
46 水素ラジカル
52 突形状
Claims (9)
- 基板を収容する収容室と、該収容室をプラズマ生成室及び基板処理室に仕切る仕切部材と、前記プラズマ生成室内に配置される高周波アンテナと、前記プラズマ生成室内に処理ガスを導入する処理ガス導入部と、前記基板処理室内に配置されて前記基板を載置し且つバイアス電圧が印加される載置台とを備える基板処理装置であって、
前記仕切部材は、接地された導電体と該導電体の表面を覆う絶縁体とを有することを特徴とする基板処理装置。 - 前記仕切部材は、前記プラズマ生成室から前記基板処理室へ向けて少なくとも二重に配置された板状部材からなり、各前記板状部材は表面を覆う絶縁体とを有することを特徴とする請求項1記載の基板処理装置。
- 各前記板状部材は重ね合わせ方向に貫通する複数の貫通孔を有し、
前記プラズマ生成室から前記基板処理室へ向けて眺めたとき、一の前記板状部材における各前記貫通孔は、他の前記板状部材における各前記貫通孔と重ならないことを特徴とする請求項2記載の基板処理装置。 - 前記基板処理室内に他の処理ガスを導入する他の処理ガス導入部をさらに備えることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記他の処理ガス導入部は複数のガス吹き出し口を有し、前記複数のガス吹き出し口は前記仕切部材における前記基板処理室側において分散して配置されることを特徴とする請求項4記載の基板処理装置。
- 前記高周波アンテナ及び前記仕切部材の間の距離は30mm以上であることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理装置。
- 基板を収容する収容室と、該収容室をプラズマ生成室及び基板処理室に仕切る仕切部材と、前記プラズマ生成室内に配置される高周波アンテナと、前記プラズマ生成室内に処理ガスを導入する処理ガス導入部と、前記基板処理室内に配置されて前記基板を載置し且つバイアス電圧が印加される載置台と、前記基板処理室内に他の処理ガスを導入する他の処理ガス導入部とを備え、前記仕切部材は、接地された導電体と該導電体の表面を覆う絶縁体とを有する基板処理装置における基板処理方法であって、
前記他の処理ガス導入部が前記基板処理室内にシラン系のガスを導入する原料ガス導入ステップと、
前記処理ガス導入部が前記プラズマ生成室内に酸素ガスを導入し、前記高周波アンテナが前記酸素ガスからプラズマを生成するプラズマ生成ステップとを有することを特徴とする基板処理方法。 - 基板を収容する収容室と、該収容室をプラズマ生成室及び基板処理室に仕切る仕切部材と、前記プラズマ生成室内に配置される高周波アンテナと、前記プラズマ生成室内に処理ガスを導入する処理ガス導入部と、前記基板処理室内に配置されて前記基板を載置し且つバイアス電圧が印加される載置台とを備え、前記仕切部材は、接地された導電体と該導電体の表面を覆う絶縁体とを有する基板処理装置における基板処理方法であって、
前記処理ガス導入部が前記プラズマ生成室内に水素ガスを導入し、前記高周波アンテナが前記水素ガスからプラズマを生成するプラズマ生成ステップを有し、
前記基板の表面の少なくとも一部に異物が堆積していることを特徴とする基板処理方法。 - 基板を収容する収容室と、該収容室をプラズマ生成室及び基板処理室に仕切る仕切部材と、前記プラズマ生成室内に配置される高周波アンテナと、前記プラズマ生成室内に処理ガスを導入する処理ガス導入部と、前記基板処理室内に配置されて前記基板を載置し且つバイアス電圧が印加される載置台とを備え、前記仕切部材は、接地された導電体と該導電体の表面を覆う絶縁体とを有する基板処理装置における基板処理方法であって、
前記処理ガス導入部が前記プラズマ生成室内に酸素ガスを導入し、前記高周波アンテナが前記酸素ガスからプラズマを生成するプラズマ生成ステップを有し、
前記基板は、その表面に形成されたフォトレジストからなる所定の幅を有する突形状を有することを特徴とする基板処理方法。
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US12/706,094 US20100206846A1 (en) | 2009-02-17 | 2010-02-16 | Substrate processing apparatus and substrate processing method |
US14/599,059 US20150132960A1 (en) | 2009-02-17 | 2015-01-16 | Substrate processing apparatus and substrate processing method |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012156261A (ja) * | 2011-01-25 | 2012-08-16 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
WO2014132891A1 (ja) * | 2013-02-28 | 2014-09-04 | 三井造船株式会社 | 成膜装置及び成膜方法 |
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