JP2018088465A - 基板処理装置及び遮熱板 - Google Patents
基板処理装置及び遮熱板 Download PDFInfo
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01J2237/317—Processing objects on a microscale
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- H01J2237/32—Processing objects by plasma generation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Computer Hardware Design (AREA)
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
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- Chemical Vapour Deposition (AREA)
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Abstract
【解決手段】プロセスモジュール13は、ウエハWを収容する処理容器28と、該処理容器28の内部のプラズマ生成空間P及びウエハWの間に配置される仕切板37と、仕切板37及びウエハWの間に配置される遮熱板48とを備え、仕切板37はプラズマ生成空間Pで生成されたプラズマ中のラジカルを選択的にウエハWへ向けて透過させ、遮熱板48はウエハWと対向するように配置され、遮熱板48は金属からなり、処理容器28へ接続される。
【選択図】図2
Description
13 プロセスモジュール
28 処理容器
37 仕切板
48 遮熱板
49 スリット
52 ガス噴出口
Claims (10)
- 基板を収容する処理容器と、該処理容器内に発生するプラズマ及び前記基板の間に配置される仕切部材とを備え、前記仕切部材は前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる基板処理装置において、
前記仕切部材及び前記基板の間に配置される遮熱板を備え、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板は金属からなり、前記処理容器へ接続されることを特徴とする基板処理装置。 - 前記遮熱板は前記処理容器の一部を構成することを特徴とする請求項1記載の基板処理装置。
- 前記遮熱板及び前記処理容器はいずれもアルミニウム又はアルミニウム合金からなることを特徴とする請求項2記載の基板処理装置。
- 前記遮熱板は前記基板へ向けて処理ガスを噴出する複数の噴出口を有することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記遮熱板は厚さ方向に貫通するラジカル通路を有し、該ラジカル通路の断面形状は前記基板へ向けて拡径することを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
- 前記遮熱板は誘電体で覆われることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理装置。
- 前記誘電体はイットリウム化合物又はシリコンからなることを特徴とする請求項6記載の基板処理装置。
- 基板を収容する処理容器と、該処理容器内に発生するプラズマ及び前記基板の間に配置される仕切部材とを備え、前記仕切部材は前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる基板処理装置において、
前記仕切部材及び前記基板の間に配置される遮熱板を備え、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板はシリコンからなり、前記処理容器へ接続されることを特徴とする基板処理装置。 - プラズマ及び基板の間に配置されて前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる仕切部材と、前記基板との間に配置される遮熱板であって、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板は金属からなることを特徴とする遮熱板。 - プラズマ及び基板の間に配置されて前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる仕切部材と、前記基板との間に配置される遮熱板であって、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板はシリコンからなることを特徴とする遮熱板。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2016230544A JP6764771B2 (ja) | 2016-11-28 | 2016-11-28 | 基板処理装置及び遮熱板 |
KR1020170152095A KR102032617B1 (ko) | 2016-11-28 | 2017-11-15 | 기판 처리 장치 및 차열판 |
TW106140878A TWI749109B (zh) | 2016-11-28 | 2017-11-24 | 基板處理裝置及隔熱板 |
US15/822,658 US20180151380A1 (en) | 2016-11-28 | 2017-11-27 | Substrate processing apparatus and heat shield plate |
CN201711216223.1A CN108122727B (zh) | 2016-11-28 | 2017-11-28 | 基板处理装置和隔热板 |
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JP2016230544A JP6764771B2 (ja) | 2016-11-28 | 2016-11-28 | 基板処理装置及び遮熱板 |
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JP2018088465A true JP2018088465A (ja) | 2018-06-07 |
JP6764771B2 JP6764771B2 (ja) | 2020-10-07 |
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US (1) | US20180151380A1 (ja) |
JP (1) | JP6764771B2 (ja) |
KR (1) | KR102032617B1 (ja) |
CN (1) | CN108122727B (ja) |
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KR20220106044A (ko) * | 2021-01-21 | 2022-07-28 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
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JP2005514762A (ja) * | 2001-12-20 | 2005-05-19 | 東京エレクトロン株式会社 | 加工物をプラズマ処理するための磁気フィルタを備える方法および装置 |
JP2009016453A (ja) * | 2007-07-02 | 2009-01-22 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2010192197A (ja) * | 2009-02-17 | 2010-09-02 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2011154973A (ja) * | 2010-01-28 | 2011-08-11 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2014220231A (ja) * | 2013-02-15 | 2014-11-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 温度制御機能を備えるマルチプレナムシャワーヘッド |
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JP4664119B2 (ja) * | 2005-05-17 | 2011-04-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20090029564A1 (en) * | 2005-05-31 | 2009-01-29 | Tokyo Electron Limited | Plasma treatment apparatus and plasma treatment method |
JP5225389B2 (ja) * | 2008-10-28 | 2013-07-03 | 三菱電機株式会社 | プラズマcvd装置、半導体膜の製造方法、薄膜太陽電池の製造方法およびプラズマcvd装置のクリーニング方法 |
KR101123829B1 (ko) * | 2010-02-12 | 2012-03-20 | 국제엘렉트릭코리아 주식회사 | 기판 처리 장치 및 방법 |
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- 2017-11-27 US US15/822,658 patent/US20180151380A1/en not_active Abandoned
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JP2005514762A (ja) * | 2001-12-20 | 2005-05-19 | 東京エレクトロン株式会社 | 加工物をプラズマ処理するための磁気フィルタを備える方法および装置 |
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JP2010192197A (ja) * | 2009-02-17 | 2010-09-02 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2011154973A (ja) * | 2010-01-28 | 2011-08-11 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2014220231A (ja) * | 2013-02-15 | 2014-11-20 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 温度制御機能を備えるマルチプレナムシャワーヘッド |
US20160042924A1 (en) * | 2014-08-08 | 2016-02-11 | Applied Materials, Inc. | Plasma generation chamber with smooth plasma resistant coating |
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KR20180060987A (ko) | 2018-06-07 |
TWI749109B (zh) | 2021-12-11 |
KR102032617B1 (ko) | 2019-10-15 |
CN108122727B (zh) | 2019-12-24 |
TW201833982A (zh) | 2018-09-16 |
JP6764771B2 (ja) | 2020-10-07 |
US20180151380A1 (en) | 2018-05-31 |
CN108122727A (zh) | 2018-06-05 |
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