DE69625149D1 - Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren - Google Patents

Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren

Info

Publication number
DE69625149D1
DE69625149D1 DE69625149T DE69625149T DE69625149D1 DE 69625149 D1 DE69625149 D1 DE 69625149D1 DE 69625149 T DE69625149 T DE 69625149T DE 69625149 T DE69625149 T DE 69625149T DE 69625149 D1 DE69625149 D1 DE 69625149D1
Authority
DE
Germany
Prior art keywords
plasma processing
microwave plasma
processing apparatus
processing method
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69625149T
Other languages
English (en)
Inventor
Nobumasa Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69625149D1 publication Critical patent/DE69625149D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
DE69625149T 1995-09-21 1996-09-19 Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren Expired - Lifetime DE69625149D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7243375A JPH0987851A (ja) 1995-09-21 1995-09-21 マイクロ波プラズマ処理装置及び処理方法

Publications (1)

Publication Number Publication Date
DE69625149D1 true DE69625149D1 (de) 2003-01-16

Family

ID=17102922

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625149T Expired - Lifetime DE69625149D1 (de) 1995-09-21 1996-09-19 Mikrowellen-Plasmabearbeitungsgerät und Mikrowellen-Plasmabearbeitungsverfahren

Country Status (5)

Country Link
US (1) US5985091A (de)
EP (1) EP0764969B1 (de)
JP (1) JPH0987851A (de)
KR (1) KR100220132B1 (de)
DE (1) DE69625149D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
JP2000312045A (ja) * 1999-02-26 2000-11-07 Tadahiro Omi レーザ発振装置、露光装置及びデバイスの製造方法
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
JP3419745B2 (ja) * 2000-02-28 2003-06-23 キヤノン販売株式会社 半導体装置及びその製造方法
JP2001267291A (ja) * 2000-03-16 2001-09-28 Nec Corp 回路処理方法および装置、動作制御方法および装置、情報記憶媒体
US6873113B2 (en) 2000-04-13 2005-03-29 Tokyo Electron Limited Stand alone plasma vacuum pump
US6541781B1 (en) * 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
JP4610126B2 (ja) * 2001-06-14 2011-01-12 株式会社神戸製鋼所 プラズマｃｖｄ装置
US6729850B2 (en) 2001-10-31 2004-05-04 Tokyo Electron Limited Applied plasma duct system
US7219403B2 (en) * 2002-07-23 2007-05-22 The Procter & Gamble Company Fastening member comprising shaped tab
WO2007067086A1 (fr) * 2005-12-08 2007-06-14 Georgiy Yakovlevitch Pavlov Dispositif de traitement par plasma
KR100927995B1 (ko) * 2008-11-20 2009-11-24 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 그의 제조방법
US8298372B2 (en) * 2009-04-20 2012-10-30 Applied Materials, Inc. Quartz window having gas feed and processing equipment incorporating same
TWI465158B (zh) * 2011-01-12 2014-12-11 Ind Tech Res Inst 微波電漿激發裝置
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
JP6527482B2 (ja) * 2016-03-14 2019-06-05 東芝デバイス＆ストレージ株式会社 半導体製造装置
EP3291279B1 (de) * 2016-09-06 2021-05-05 Nano Coatings, S.L. Diamantenherstellungsvorrichtung und verfahren über chemische dampfabscheidung mit unterstützung eines mit mikrowellenenergie gespeisten laserinitiierten plasmas
CN112771201A (zh) * 2018-10-02 2021-05-07 瑞士艾发科技 等离子体增强原子层沉积(peald)设备
JP2023550342A (ja) * 2020-11-20 2023-12-01 ラム リサーチ コーポレーション 静磁場を使用するプラズマ一様性制御
KR20240034463A (ko) * 2022-09-07 2024-03-14 한국핵융합에너지연구원 공진 도파관에 의한 플라즈마 발생장치
KR20240034503A (ko) * 2022-09-07 2024-03-14 한국핵융합에너지연구원 튜너를 구비하는 공진 도파관에 의한 플라즈마 발생장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0264913B1 (de) * 1986-10-20 1994-06-22 Hitachi, Ltd. Plasmabearbeitungsgerät
US5370765A (en) * 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
US5183531A (en) * 1989-08-11 1993-02-02 Sanyo Electric Co., Ltd. Dry etching method
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
JP2886752B2 (ja) * 1991-11-05 1999-04-26 キヤノン株式会社 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
DE4235914A1 (de) * 1992-10-23 1994-04-28 Juergen Prof Dr Engemann Vorrichtung zur Erzeugung von Mikrowellenplasmen
EP0626683B1 (de) * 1993-05-27 1999-08-11 Canon Kabushiki Kaisha Bearbeitungsgerät mittels Mikrowellen und Verfahren zur Herstellung eines anorganischen dielektrischen Films

Also Published As

Publication number Publication date
KR100220132B1 (ko) 1999-09-01
EP0764969B1 (de) 2002-12-04
EP0764969A3 (de) 1997-11-12
JPH0987851A (ja) 1997-03-31
EP0764969A2 (de) 1997-03-26
US5985091A (en) 1999-11-16
KR970015781A (de) 1997-04-28

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Legal Events

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8332 No legal effect for de