DE69421872D1 - Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät - Google Patents

Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät

Info

Publication number
DE69421872D1
DE69421872D1 DE69421872T DE69421872T DE69421872D1 DE 69421872 D1 DE69421872 D1 DE 69421872D1 DE 69421872 T DE69421872 T DE 69421872T DE 69421872 T DE69421872 T DE 69421872T DE 69421872 D1 DE69421872 D1 DE 69421872D1
Authority
DE
Germany
Prior art keywords
plasma
processing method
plasma processing
generation method
plasma generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421872T
Other languages
English (en)
Other versions
DE69421872T2 (de
Inventor
Katsuya Watanabe
Tetsunori Kaji
Naoyuki Tamura
Kenji Nakata
Hiroyuki Shichida
Seiichi Watanabe
Sadayuki Okudaira
Keizo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13012594A external-priority patent/JP3208995B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69421872D1 publication Critical patent/DE69421872D1/de
Application granted granted Critical
Publication of DE69421872T2 publication Critical patent/DE69421872T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE69421872T 1993-09-17 1994-09-16 Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät Expired - Fee Related DE69421872T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23127493 1993-09-17
JP33496193 1993-12-28
JP13012594A JP3208995B2 (ja) 1994-06-13 1994-06-13 プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
DE69421872D1 true DE69421872D1 (de) 2000-01-05
DE69421872T2 DE69421872T2 (de) 2000-07-20

Family

ID=27316061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421872T Expired - Fee Related DE69421872T2 (de) 1993-09-17 1994-09-16 Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät

Country Status (5)

Country Link
US (1) US5580420A (de)
EP (1) EP0644575B1 (de)
KR (1) KR100321325B1 (de)
DE (1) DE69421872T2 (de)
TW (1) TW264601B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714009A (en) * 1995-01-11 1998-02-03 Deposition Sciences, Inc. Apparatus for generating large distributed plasmas by means of plasma-guided microwave power
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
JP3368159B2 (ja) * 1996-11-20 2003-01-20 東京エレクトロン株式会社 プラズマ処理装置
US6066568A (en) * 1997-05-14 2000-05-23 Tokyo Electron Limited Plasma treatment method and system
ATE267890T1 (de) * 1997-06-13 2004-06-15 Unaxis Trading Ag Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind
WO1999019526A2 (en) * 1997-10-15 1999-04-22 Tokyo Electron Limited Apparatus and method for adjusting density distribution of a plasma
DE10010766B4 (de) * 2000-03-04 2006-11-30 Schott Ag Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
TW551782U (en) * 2002-10-09 2003-09-01 Ind Tech Res Inst Microwave plasma processing device
CN100447297C (zh) * 2003-04-16 2008-12-31 东洋制罐株式会社 微波等离子体处理方法
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
US8647434B2 (en) 2005-02-28 2014-02-11 Sulzer Metco Ag System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
US8006640B2 (en) 2006-03-27 2011-08-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP4585574B2 (ja) * 2008-02-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN102171795A (zh) * 2008-10-03 2011-08-31 维易科加工设备股份有限公司 气相外延系统
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus
US9763287B2 (en) * 2011-11-30 2017-09-12 Michael R. Knox Single mode microwave device for producing exfoliated graphite
JP2014154421A (ja) * 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
JP2014160557A (ja) * 2013-02-19 2014-09-04 Tokyo Electron Ltd プラズマ処理装置
KR101427720B1 (ko) * 2013-03-27 2014-08-13 (주)트리플코어스코리아 단차부 및 블록부를 이용한 플라즈마 도파관
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
JP2016009711A (ja) * 2014-06-23 2016-01-18 株式会社日立ハイテクノロジーズ プラズマ処理装置
US11328931B1 (en) * 2021-02-12 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62294181A (ja) * 1986-06-13 1987-12-21 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜の形成方法及び装置
US4866346A (en) * 1987-06-22 1989-09-12 Applied Science & Technology, Inc. Microwave plasma generator
JPH01107538A (ja) * 1987-10-21 1989-04-25 Hitachi Ltd マイクロ波プラズマ処理方法及び装置
KR960014434B1 (ko) * 1987-12-09 1996-10-15 후세 노보루 플라즈마 처리장치
KR900013579A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 마이크로파 플라즈마 처리방법 및 장치
JPH02230728A (ja) * 1989-03-03 1990-09-13 Hitachi Ltd プラズマ処理方法及び装置
EP0395415B1 (de) * 1989-04-27 1995-03-15 Fujitsu Limited Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas
JP2595128B2 (ja) * 1990-10-31 1997-03-26 株式会社日立製作所 マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
US5580420A (en) 1996-12-03
KR950010714A (ko) 1995-04-28
TW264601B (de) 1995-12-01
EP0644575B1 (de) 1999-12-01
EP0644575A1 (de) 1995-03-22
KR100321325B1 (ko) 2002-06-20
DE69421872T2 (de) 2000-07-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee