WO2007067086A1 - Dispositif de traitement par plasma - Google Patents

Dispositif de traitement par plasma Download PDF

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Publication number
WO2007067086A1
WO2007067086A1 PCT/RU2005/000629 RU2005000629W WO2007067086A1 WO 2007067086 A1 WO2007067086 A1 WO 2007067086A1 RU 2005000629 W RU2005000629 W RU 2005000629W WO 2007067086 A1 WO2007067086 A1 WO 2007067086A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
inductor
chamber
pedestal
microwave
Prior art date
Application number
PCT/RU2005/000629
Other languages
English (en)
Russian (ru)
Inventor
Georgiy Yakovlevitch Pavlov
Anatoliy Pavlovitch Alekhin
Sergei Viktorovitch Redkin
Alexander Stepanovitch Skripnitchenko
Original Assignee
Georgiy Yakovlevitch Pavlov
Anatoliy Pavlovitch Alekhin
Sergei Viktorovitch Redkin
Skripnitchenko Alexander Stepa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgiy Yakovlevitch Pavlov, Anatoliy Pavlovitch Alekhin, Sergei Viktorovitch Redkin, Skripnitchenko Alexander Stepa filed Critical Georgiy Yakovlevitch Pavlov
Priority to PCT/RU2005/000629 priority Critical patent/WO2007067086A1/fr
Publication of WO2007067086A1 publication Critical patent/WO2007067086A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • a plasma processing device relates to technological plasma generation devices and can be used to carry out the processes of deposition, etching, oxidation, implantation (not deep layers) of burning organic masks on various substrates in the fields of electronics, nanoelectronics, manufacturing of medical instruments, sensor devices, etc.
  • Plasma processes are widely used in various fields of technology, including the manufacture of semiconductor devices and
  • Microwave plasma devices are known for etching and deposition of layers of various materials based on the phenomenon of electron cyclotron resonance (ECR) (Patent. Japan. Application JNa 54-39263 Lab. 27.11.1979, N ° 2- 982.).
  • ECR electron cyclotron resonance
  • the matching features are:
  • the object (s) of processing (support (s), plate (s), etc.) is located on a heated (cooled) pedestal,
  • the main disadvantage of these devices is the limitation of the size of the processed substrates (plates 100-150 mm in diameter), in view of the impossibility of ensuring a uniform discharge density in large volumes of reaction chambers.
  • the matching features are:
  • the object (s) of processing (support (s), plate (s), etc.) is located on a heated (cooled) pedestal for large plates, located in the reaction chamber and having the ability to move.
  • the main disadvantage of these devices is uncontrolled processes of recombination of active plasma components in the volume of the reaction chamber, which reduces the speed of technological processes and increases the heterogeneity of the processing of the substrate.
  • the technical result of the present invention is the introduction of a new parameter for controlling the rates and homogeneity of technological processes by changing the process control by recombination of the active plasma components in the volume of the reaction chamber.
  • the indicated result is achieved due to the fact that an RF inductor is mounted on the pedestal outside the chamber above the substrate location, and the chamber wall adjacent to the inductor is made of a material that is transparent to the RF electromagnetic field.
  • the volume of plasma introduced into the reaction chamber from microwave sources will absorb RF energy from the inductor, increasing the ionization density of the process plasma up to (10 ⁇ -10-cm-), which ensures an increase in the speed of technological processes and processing uniformity
  • the plasma treatment device consists of a reaction vacuum chamber 1 with inputs of 2 microwave plasma sources perpendicular to the side walls of the reaction vacuum chamber, a heated or cooled pedestal 3 for substrates located in the reaction vacuum chamber, which has the ability to move (vertical) RF inductor 4 located outside the reaction vacuum chamber above the location of the substrates on the pedestal, and the wall of the chamber 5 adjacent to the inductor is made of transparent material go for the HF electromagnetic field.
  • the RF inductor itself can have various shapes, in particular, be made in the form of a flat or cylindrical spiral.
  • Microwave plasma is formed in crossed electric and magnetic fields in the tubes 2, in the region of passage through the waveguides 6, to which are connected the magnetic cores 7, on which the coils 8 are placed.
  • Microwave plasma sources 2 are fed by microwave energy waveguide 6, working gas and magnetic field from direct current coils 8 through magnetic circuit 7, microwave plasma is ignited and which enters the reaction vacuum chamber 1, where on the pedestal 3 at a given temperature, electric potential and vertical displacement is the substrate being processed, and the pedestal is heated or cooled. Above the substrate, into the reaction vacuum chamber through the wall 5, which is transparent for RF radiation, RF energy is introduced using the RF inductor 4, which is absorbed in the plasma from microwave sources.
  • the electrically conductive characteristics of the “decaying” microwave plasma from the plasma sources 2 provide efficient absorption of RF power, which, in turn, compensates for the energy loss of the “decaying” microwave
  • SUBSTITUTE SHEET (RULE 26) increasing the uniformity and degree of plasma ionization up to 10 p -10 12 cm “3 , which leads to an increase in the speed of technological processes and uniformity of processing, is at the same time an additional parameter for controlling the speeds of technological processes due to changes in the RF power supplied to the RF inductor.
  • the diameter of the reaction chamber is 250 mm.
  • the diameter of the flat inductor is 140 mm.
  • the diameter of the processed plate is 150 mm.
  • the plate was placed on a water-cooled pedestal and during processing the plate temperature did not exceed 5O 0 C.
  • the magnitude of the supplied microwave power was 300 watts.
  • Etching was carried out in a plasma-forming mixture of SF 6 + O 2 .
  • the working pressure in the reaction chamber is 2x10 "2 Torr.
  • the average etching rate of Si was 0.011 ⁇ m / s.
  • the heterogeneity of the etching depth was ⁇ 2.0%
  • the diameter of the reaction chamber is 250 mm.
  • the diameter of the flat inductor is 140 mm.
  • the diameter of the processed plate is 150 mm.
  • the plate was placed on a water-cooled pedestal and during processing the plate temperature did not exceed 5O 0 C.
  • the value of the supplied RF power was 400 W.
  • Etching was carried out in a plasma-forming mixture of SF 6 + O 2 .
  • the working pressure in the reaction chamber - 2xlO "2 Torr. was 0.0071 ⁇ m / s.
  • the etching depth heterogeneity was ⁇ 3.1%
  • the diameter of the reaction chamber is 250 mm.
  • the diameter of the flat inductor is 140 mm.
  • the diameter of the processed plate is 150 mm.
  • the plate was placed on a water-cooled pedestal and during processing the plate temperature did not exceed 5O 0 C.
  • the magnitude of the supplied microwave power was 300 watts.
  • RF power was 250 watts.
  • SUBSTITUTE SHEET (RULE 26) mixtures of SF 6 + O 2 .
  • the working pressure in the reaction chamber is 2x10 "2 Torr.
  • the etching rate of Si was 0.0143 ⁇ m / s.
  • the inhomogeneity of the etching depth across the plate was ⁇ 1.8%.
  • the use of an additional RF induction discharge leads to an increase in the etching rate, which is only possible due to an increase in the degree of plasma ionization and a decrease in the recombination processes in the technological plasma, which also increases the uniformity of the substrate processing process.
  • the heterogeneity of the etching depth decreased from ⁇ 3.1% to ⁇ 1.8%.
  • the RF is fed to the pedestal 3 or a constant shift of the electric potential of the pedestal of the corresponding sign (plus or minus) relative to the plasma.
  • an axial movement of the pedestal 3 is provided.
  • the displacement of the electric potential of the pedestal relative to the plasma makes it possible to control the flux density and energy of the charged particles interacting with the processed substrate. Moving the pedestal relative to the plasma also allows you to control the density and energy of the flow of neutral chemically active particles interacting with the processed substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Un dispositif de traitement par plasma fait partie des dispositifs de génération de plasma technologique et peut s'utiliser pour mettre en oeuvre des processus de sédimentation, de gravure, d'oxydation, d'implantation (de couches peu profondes) et de brûlage de masques organiques sur de différents substrats dans les domaines de l'électronique, de la nano-électronique, de la fabrication d'instruments médicaux, de dispositifs à capteurs, etc. L'invention permet d'introduire un nouveau paramètre de réglage des vitesses et de l'homogénéité des processus technologiques grâce au changement sur le plan du pilotage des processus de recombinaison des composants actifs du plasma dans le volume de la chambre de réaction. Selon l'invention, on monte sur un socle, à l'extérieur de la caméra et à l'emplacement devant accueillir les substrats, un inducteur de décharge HF, la paroi de la chambre adjacente à l'inducteur étant réalisée à partir d'un matériau transparent au champ haute fréquence.
PCT/RU2005/000629 2005-12-08 2005-12-08 Dispositif de traitement par plasma WO2007067086A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/RU2005/000629 WO2007067086A1 (fr) 2005-12-08 2005-12-08 Dispositif de traitement par plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2005/000629 WO2007067086A1 (fr) 2005-12-08 2005-12-08 Dispositif de traitement par plasma

Publications (1)

Publication Number Publication Date
WO2007067086A1 true WO2007067086A1 (fr) 2007-06-14

Family

ID=38123127

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2005/000629 WO2007067086A1 (fr) 2005-12-08 2005-12-08 Dispositif de traitement par plasma

Country Status (1)

Country Link
WO (1) WO2007067086A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418540A2 (fr) * 1989-08-11 1991-03-27 Sanyo Electric Co., Ltd Méthode d'attaque sèche
WO1997004476A2 (fr) * 1995-07-18 1997-02-06 Ulvac Technologies, Inc. Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur
US5985091A (en) * 1995-09-21 1999-11-16 Canon Kabushiki Kaisha Microwave plasma processing apparatus and microwave plasma processing method
RU2216818C1 (ru) * 2003-01-28 2003-11-20 Общество с ограниченной ответственностью "ЭпиЛаб" Эцр-плазменный источник для обработки полупроводниковых структур, способ обработки полупроводниковых структур, способ изготовления полупроводниковых приборов и интегральных схем (варианты), полупроводниковый прибор или интегральная схема (варианты)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418540A2 (fr) * 1989-08-11 1991-03-27 Sanyo Electric Co., Ltd Méthode d'attaque sèche
WO1997004476A2 (fr) * 1995-07-18 1997-02-06 Ulvac Technologies, Inc. Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur
US5985091A (en) * 1995-09-21 1999-11-16 Canon Kabushiki Kaisha Microwave plasma processing apparatus and microwave plasma processing method
RU2216818C1 (ru) * 2003-01-28 2003-11-20 Общество с ограниченной ответственностью "ЭпиЛаб" Эцр-плазменный источник для обработки полупроводниковых структур, способ обработки полупроводниковых структур, способ изготовления полупроводниковых приборов и интегральных схем (варианты), полупроводниковый прибор или интегральная схема (варианты)

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