DE270667T1 - Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren. - Google Patents

Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren.

Info

Publication number
DE270667T1
DE270667T1 DE198787904753T DE87904753T DE270667T1 DE 270667 T1 DE270667 T1 DE 270667T1 DE 198787904753 T DE198787904753 T DE 198787904753T DE 87904753 T DE87904753 T DE 87904753T DE 270667 T1 DE270667 T1 DE 270667T1
Authority
DE
Germany
Prior art keywords
processing method
surface processing
microwave device
double plasma
plasma microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE198787904753T
Other languages
English (en)
Inventor
A. Thaddeus Auburn Al 36830 Us Roppel
Jes Okemos Mi 48864 Us Asmussen
K. Donnie East Lansing Mi 48823 Us Reinhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Michigan State University MSU
Original Assignee
Michigan State University MSU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Michigan State University MSU filed Critical Michigan State University MSU
Publication of DE270667T1 publication Critical patent/DE270667T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32284—Means for controlling or selecting resonance mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
DE198787904753T 1986-06-12 1987-06-10 Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren. Pending DE270667T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/873,694 US4691662A (en) 1983-02-28 1986-06-12 Dual plasma microwave apparatus and method for treating a surface
PCT/US1987/001427 WO1987007760A1 (en) 1986-06-12 1987-06-10 Dual plasma microwave apparatus and method for treating a surface

Publications (1)

Publication Number Publication Date
DE270667T1 true DE270667T1 (de) 1988-11-03

Family

ID=25362148

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8787904753T Expired - Fee Related DE3776106D1 (de) 1986-06-12 1987-06-10 Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren.
DE198787904753T Pending DE270667T1 (de) 1986-06-12 1987-06-10 Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE8787904753T Expired - Fee Related DE3776106D1 (de) 1986-06-12 1987-06-10 Doppelplasma-mikrowellengeraet und oberflaechenbearbeitungsverfahren.

Country Status (5)

Country Link
US (1) US4691662A (de)
EP (1) EP0270667B1 (de)
CA (1) CA1311214C (de)
DE (2) DE3776106D1 (de)
WO (1) WO1987007760A1 (de)

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JPH01297141A (ja) * 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
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US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
US4906900A (en) * 1989-04-03 1990-03-06 Board Of Trustees Operating Michigan State University Coaxial cavity type, radiofrequency wave, plasma generating apparatus
FR2646557B1 (fr) * 1989-04-28 1997-07-18 Canon Kk Procede pour former un film de semiconducteur polycristallin sur un substrat isolant
DE3942964A1 (de) * 1989-12-23 1991-06-27 Leybold Ag Einrichtung fuer die erzeugung eines plasmas
CA2050091C (en) * 1990-10-03 1999-06-15 Richard C. Eden Electronic circuit and method with thermal management
US5310512A (en) * 1990-11-15 1994-05-10 Norton Company Method for producing synthetic diamond structures
CA2054050C (en) * 1990-11-16 1998-07-07 Louis K. Bigelow Method and apparatus for making grit and abrasive media
WO1992019785A1 (en) * 1991-04-29 1992-11-12 Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' Method and device for treatment of articles in gas-discharge plasma
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
US5342660A (en) * 1991-05-10 1994-08-30 Celestech, Inc. Method for plasma jet deposition
JPH0521393A (ja) * 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
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US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5213248A (en) * 1992-01-10 1993-05-25 Norton Company Bonding tool and its fabrication
US5225740A (en) * 1992-03-26 1993-07-06 General Atomics Method and apparatus for producing high density plasma using whistler mode excitation
US5361016A (en) * 1992-03-26 1994-11-01 General Atomics High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube
US5311103A (en) * 1992-06-01 1994-05-10 Board Of Trustees Operating Michigan State University Apparatus for the coating of material on a substrate using a microwave or UHF plasma
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5273587A (en) * 1992-09-04 1993-12-28 United Solar Systems Corporation Igniter for microwave energized plasma processing apparatus
US5470423A (en) * 1994-01-25 1995-11-28 Board Of Trustees Operating Michigan State University Microwave pultrusion apparatus and method of use
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5551983A (en) * 1994-11-01 1996-09-03 Celestech, Inc. Method and apparatus for depositing a substance with temperature control
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
US6077787A (en) * 1995-09-25 2000-06-20 Board Of Trustees Operating Michigan State University Method for radiofrequency wave etching
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
JP2000514136A (ja) 1996-06-28 2000-10-24 ラム リサーチ コーポレイション 高密度プラズマ化学蒸着装置および方法
US6184158B1 (en) 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6057645A (en) * 1997-12-31 2000-05-02 Eaton Corporation Plasma discharge device with dynamic tuning by a movable microwave trap
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
DE10024699A1 (de) * 2000-05-18 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
TW511398B (en) * 2000-09-12 2002-11-21 Tokyo Electron Ltd Apparatus and method to control the uniformity of plasma by reducing radial loss
US6833710B2 (en) * 2000-10-27 2004-12-21 Axcelis Technologies, Inc. Probe assembly for detecting an ion in a plasma generated in an ion source
US6566147B2 (en) 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) * 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6955177B1 (en) * 2001-12-07 2005-10-18 Novellus Systems, Inc. Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss
JP4252749B2 (ja) * 2001-12-13 2009-04-08 忠弘 大見 基板処理方法および基板処理装置
JP4109468B2 (ja) * 2002-03-05 2008-07-02 住友ゴム工業株式会社 自動二輪車用ラジアルタイヤ
EP1614770B1 (de) * 2003-04-16 2010-10-13 Toyo Seikan Kaisha, Ltd. Mikrowellenplasmaverarbeitungsverfahren
US7138187B2 (en) * 2004-03-19 2006-11-21 Younger Mfg. Co. Polyvinyl alcohol-based film exhibiting improved adhesion
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
US9048190B2 (en) * 2012-10-09 2015-06-02 Applied Materials, Inc. Methods and apparatus for processing substrates using an ion shield
TWI546858B (zh) * 2014-04-17 2016-08-21 紫焰科技股份有限公司 非接觸式物理蝕刻系統及方法
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion

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JPS5852297B2 (ja) * 1979-06-04 1983-11-21 株式会社日立製作所 マイクロ波イオン源
US4426582A (en) * 1980-01-21 1984-01-17 Oregon Graduate Center Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
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US4481062A (en) * 1982-09-02 1984-11-06 Kaufman Harold R Electron bombardment ion sources
JPS6043620B2 (ja) * 1982-11-25 1985-09-28 日新ハイボルテージ株式会社 マイクロ波イオン源
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US4587430A (en) * 1983-02-10 1986-05-06 Mission Research Corporation Ion implantation source and device
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US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
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JPS61136229A (ja) * 1984-12-06 1986-06-24 Toshiba Corp ドライエツチング装置

Also Published As

Publication number Publication date
EP0270667B1 (de) 1992-01-15
WO1987007760A1 (en) 1987-12-17
EP0270667A1 (de) 1988-06-15
US4691662A (en) 1987-09-08
DE3776106D1 (de) 1992-02-27
CA1311214C (en) 1992-12-08
EP0270667A4 (de) 1988-09-28

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