DE3776079D1 - Vakuum-beschichtungsverfahren und vorrichtung dazu. - Google Patents

Vakuum-beschichtungsverfahren und vorrichtung dazu.

Info

Publication number
DE3776079D1
DE3776079D1 DE8787420292T DE3776079T DE3776079D1 DE 3776079 D1 DE3776079 D1 DE 3776079D1 DE 8787420292 T DE8787420292 T DE 8787420292T DE 3776079 T DE3776079 T DE 3776079T DE 3776079 D1 DE3776079 D1 DE 3776079D1
Authority
DE
Germany
Prior art keywords
coating method
vacuum coating
device therefor
therefor
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787420292T
Other languages
English (en)
Inventor
Izumi Nakayama
Akitoshi Suzuki
Hiroyuki Nawa
Motohiro Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61259458A external-priority patent/JP2546995B2/ja
Priority claimed from JP26119086A external-priority patent/JPH0691021B2/ja
Priority claimed from JP26169786A external-priority patent/JPS63114976A/ja
Priority claimed from JP26358386A external-priority patent/JP2509813B2/ja
Priority claimed from JP26466386A external-priority patent/JPH0736388B2/ja
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE3776079D1 publication Critical patent/DE3776079D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE8787420292T 1986-10-30 1987-10-28 Vakuum-beschichtungsverfahren und vorrichtung dazu. Expired - Lifetime DE3776079D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP61259458A JP2546995B2 (ja) 1986-10-30 1986-10-30 真空槽内における基板の表面処理方法及び装置
JP26119086A JPH0691021B2 (ja) 1986-10-31 1986-10-31 真空槽内における基板ホルダ−などのクリ−ニング方法及び装置
JP26169786A JPS63114976A (ja) 1986-11-01 1986-11-01 基板電極機構
JP26358386A JP2509813B2 (ja) 1986-11-04 1986-11-04 真空内処理方法及びその装置
JP26466386A JPH0736388B2 (ja) 1986-11-05 1986-11-05 Ｃｖｄ装置

Publications (1)

Publication Number Publication Date
DE3776079D1 true DE3776079D1 (de) 1992-02-27

Family

ID=27530365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787420292T Expired - Lifetime DE3776079D1 (de) 1986-10-30 1987-10-28 Vakuum-beschichtungsverfahren und vorrichtung dazu.

Country Status (3)

Country Link
US (2) US4902531A (de)
EP (1) EP0266288B1 (de)
DE (1) DE3776079D1 (de)

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US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2848498B2 (ja) * 1989-11-25 1999-01-20 日本特殊陶業株式会社 ダイヤモンドの合成方法、ダイヤモンド被覆切削工具の製造方法、及びダイヤモンド被覆切削工具の製造方法
DE69128050D1 (de) * 1990-06-29 1997-12-04 Applied Materials Inc Zweistufiges Selbstreinigungsverfahren einer Reaktionskammer
JP2951718B2 (ja) * 1990-11-28 1999-09-20 東京エレクトロン株式会社 圧力ゲージ出力の零点調整装置
GB2256085A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
GB2256084A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JP3292540B2 (ja) * 1993-03-03 2002-06-17 東京エレクトロン株式会社 熱処理装置
US5540821A (en) * 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
TW331652B (en) * 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US6223683B1 (en) 1997-03-14 2001-05-01 The Coca-Cola Company Hollow plastic containers with an external very thin coating of low permeability to gases and vapors through plasma-assisted deposition of inorganic substances and method and system for making the coating
US6105435A (en) 1997-10-24 2000-08-22 Cypress Semiconductor Corp. Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
US6080272A (en) 1998-05-08 2000-06-27 Micron Technology, Inc. Method and apparatus for plasma etching a wafer
US6251233B1 (en) 1998-08-03 2001-06-26 The Coca-Cola Company Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation
JP2000074227A (ja) * 1998-08-26 2000-03-14 Sony Corp 真空処理装置および磁気シール回転軸受けユニット
US6485603B1 (en) * 1999-07-01 2002-11-26 Applied Materials, Inc. Method and apparatus for conserving energy within a process chamber
KR100467082B1 (ko) * 2000-03-02 2005-01-24 주성엔지니어링(주) 반도체소자 제조장치 및 그 클리닝방법
US6482744B1 (en) * 2000-08-16 2002-11-19 Promos Technologies, Inc. Two step plasma etch using variable electrode spacing
US6740378B1 (en) * 2000-08-24 2004-05-25 The Coca-Cola Company Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and uv barrier and method for making same
US6720052B1 (en) 2000-08-24 2004-04-13 The Coca-Cola Company Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same
DE10115394B4 (de) * 2001-03-29 2005-03-24 Christof Diener Maschinenbauteil und/oder verfahrenstechnische Anlage mit einem Hohlraum und Reinigungsverfahren hierfür
US6599584B2 (en) * 2001-04-27 2003-07-29 The Coca-Cola Company Barrier coated plastic containers and coating methods therefor
JP2003060012A (ja) * 2001-08-08 2003-02-28 Asm Japan Kk 半導体処理用反応チャンバ
US6902620B1 (en) * 2001-12-19 2005-06-07 Novellus Systems, Inc. Atomic layer deposition systems and methods
AU2003226307A1 (en) * 2002-04-15 2003-11-03 Colormatrix Corporation Coating composition containing an epoxide additive and structures coated therewith
JP4026750B2 (ja) * 2002-04-24 2007-12-26 東京エレクトロン株式会社 基板処理装置
JP2004119520A (ja) * 2002-09-24 2004-04-15 Tokyo Electron Ltd 基板処理装置
US20040255442A1 (en) * 2003-06-19 2004-12-23 Mcdiarmid James Methods and apparatus for processing workpieces
US8455789B2 (en) * 2005-05-16 2013-06-04 Panasonic Corporation Energy collection and power reduction in laser coupling process
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20090120584A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Counter-balanced substrate support
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
US7964040B2 (en) * 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090277587A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US20100101491A1 (en) * 2008-10-29 2010-04-29 Asm Japan K.K. Wafer lift pins suspended and supported at underside of susceptor
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP6011417B2 (ja) * 2012-06-15 2016-10-19 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN103413738B (zh) * 2013-07-22 2015-10-28 西北核技术研究所 串级式电子束二极管悬浮电极的支撑装置及其驱动电路
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9892956B1 (en) 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing

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DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
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JPS5933532B2 (ja) * 1981-04-03 1984-08-16 スタンレー電気株式会社 非晶質シリコンの形成方法
US4386578A (en) * 1981-05-26 1983-06-07 The Boeing Company High velocity metallic mass increment vacuum deposit gun
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US4465416A (en) * 1982-05-17 1984-08-14 The Perkin-Elmer Corporation Wafer handling mechanism
JPS59186326A (ja) * 1983-04-06 1984-10-23 Hitachi Ltd プラズマ処理装置
JPS6012734A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd プラズマ処理装置
US4524089A (en) * 1983-11-22 1985-06-18 Olin Corporation Three-step plasma treatment of copper foils to enhance their laminate adhesion
DE3731444A1 (de) * 1987-09-18 1989-03-30 Leybold Ag Vorrichtung zum beschichten von substraten

Also Published As

Publication number Publication date
EP0266288A2 (de) 1988-05-04
US4902531A (en) 1990-02-20
US5125360A (en) 1992-06-30
EP0266288A3 (en) 1989-02-01
EP0266288B1 (de) 1992-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition