DE69132328D1 - Substrat-Behandlungsverfahren und Vorrichtung dafür - Google Patents

Substrat-Behandlungsverfahren und Vorrichtung dafür

Info

Publication number
DE69132328D1
DE69132328D1 DE69132328T DE69132328T DE69132328D1 DE 69132328 D1 DE69132328 D1 DE 69132328D1 DE 69132328 T DE69132328 T DE 69132328T DE 69132328 T DE69132328 T DE 69132328T DE 69132328 D1 DE69132328 D1 DE 69132328D1
Authority
DE
Germany
Prior art keywords
treatment method
device therefor
substrate treatment
substrate
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132328T
Other languages
English (en)
Other versions
DE69132328T2 (de
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69132328D1 publication Critical patent/DE69132328D1/de
Publication of DE69132328T2 publication Critical patent/DE69132328T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
DE69132328T 1990-10-18 1991-10-18 Substrat-Behandlungsverfahren und Vorrichtung dafür Expired - Fee Related DE69132328T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27767790A JP3167317B2 (ja) 1990-10-18 1990-10-18 基板処理装置及び同方法

Publications (2)

Publication Number Publication Date
DE69132328D1 true DE69132328D1 (de) 2000-08-24
DE69132328T2 DE69132328T2 (de) 2000-12-28

Family

ID=17586769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132328T Expired - Fee Related DE69132328T2 (de) 1990-10-18 1991-10-18 Substrat-Behandlungsverfahren und Vorrichtung dafür

Country Status (5)

Country Link
US (1) US5437733A (de)
EP (2) EP0481506B1 (de)
JP (1) JP3167317B2 (de)
KR (1) KR950000663B1 (de)
DE (1) DE69132328T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
US6039059A (en) 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
JPH1133506A (ja) * 1997-07-24 1999-02-09 Tadahiro Omi 流体処理装置及び洗浄処理システム
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JP4245713B2 (ja) * 1998-12-21 2009-04-02 東京エレクトロン株式会社 めっき装置、めっきシステム及びこれを用いためっき処理方法
JP2000232078A (ja) 1999-02-10 2000-08-22 Toshiba Corp メッキ方法及びメッキ装置
US6221437B1 (en) 1999-04-12 2001-04-24 Reynolds Tech Fabricators, Inc. Heated workpiece holder for wet plating bath
DE19960241A1 (de) * 1999-12-14 2001-07-05 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Behandeln von Substraten
WO2001099156A1 (en) 2000-06-16 2001-12-27 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
JP2004515053A (ja) * 2000-06-26 2004-05-20 アプライド　マテリアルズ　インコーポレイテッド ウェーハ洗浄方法及び装置
US7451774B2 (en) 2000-06-26 2008-11-18 Applied Materials, Inc. Method and apparatus for wafer cleaning
US6746589B2 (en) 2000-09-20 2004-06-08 Ebara Corporation Plating method and plating apparatus
US6899111B2 (en) * 2001-06-15 2005-05-31 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
US6398875B1 (en) 2001-06-27 2002-06-04 International Business Machines Corporation Process of drying semiconductor wafers using liquid or supercritical carbon dioxide
US20040031167A1 (en) 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
KR20050092130A (ko) * 2003-01-23 2005-09-20 가부시키가이샤 에바라 세이사꾸쇼 도금장치 및 도금방법
US20040238119A1 (en) * 2003-05-26 2004-12-02 Ching-Yu Chang [apparatus and method for etching silicon nitride thin film ]
JP4343025B2 (ja) * 2004-05-18 2009-10-14 東京エレクトロン株式会社 現像装置及び現像方法
TWI277167B (en) * 2004-09-10 2007-03-21 Toshiba Corp Semiconductor wafer supporting plate and method for manufacturing semiconductor device
WO2006041091A1 (ja) * 2004-10-12 2006-04-20 Nikon Corporation 露光装置のメンテナンス方法、露光装置、デバイス製造方法、液浸露光装置のメンテナンス用の液体回収部材
US20070082299A1 (en) * 2005-10-11 2007-04-12 Lam Research Corp. Methods and apparatus for fabricating conductive features on glass substrates used in liquid crystal displays
JP5460641B2 (ja) * 2011-04-12 2014-04-02 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法並びに基板洗浄プログラムを記録したコンピュータ読み取り可能な記録媒体
JP2012222254A (ja) * 2011-04-12 2012-11-12 Tokyo Electron Ltd 基板洗浄ノズル及び基板洗浄装置並びに基板洗浄方法
KR20180068047A (ko) 2016-12-13 2018-06-21 (주)대원시스템 정량 배출이 가능한 포테이토스틱 저장장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7702537L (sv) * 1977-03-07 1978-09-08 Aga Ab Forfarande och anordning for att rengora en lutande eller vertikal yta pa ett optiskt element
WO1982001482A1 (en) * 1980-11-06 1982-05-13 Patent Versuch Censor Method and installation for the processing of the upper side of a flat part by means of a liquid
US4564280A (en) * 1982-10-28 1986-01-14 Fujitsu Limited Method and apparatus for developing resist film including a movable nozzle arm
JPS59132620A (ja) * 1983-01-20 1984-07-30 Seiko Instr & Electronics Ltd 半導体ウエハ現像装置
US4519846A (en) * 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
IT1213183B (it) * 1984-06-27 1989-12-14 Ates Componenti Elettron Dispositivo per la protezione di una superficie, durante il trattamento chimico dell'opposta superficie, di elementi lenticolari in genere e di fette di silicio in particolare.
US4600463A (en) * 1985-01-04 1986-07-15 Seiichiro Aigo Treatment basin for semiconductor material
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
FR2598402B1 (fr) * 1986-05-07 1990-06-01 Rhone Poulenc Chimie Procede de nettoyage de surfaces filtrantes
US4997490A (en) * 1990-08-02 1991-03-05 Bold Plastics, Inc. Method of cleaning and rinsing wafers

Also Published As

Publication number Publication date
JP3167317B2 (ja) 2001-05-21
JPH04154122A (ja) 1992-05-27
KR950000663B1 (ko) 1995-01-27
EP0481506A2 (de) 1992-04-22
EP0481506B1 (de) 2000-07-19
DE69132328T2 (de) 2000-12-28
EP0481506A3 (en) 1992-11-25
US5437733A (en) 1995-08-01
EP0858099A2 (de) 1998-08-12
EP0858099A3 (de) 1999-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee