DE3854276D1 - Kathodenzerstäubungsverfahren und Vorrichtung zur Durchführung desselben. - Google Patents

Kathodenzerstäubungsverfahren und Vorrichtung zur Durchführung desselben.

Info

Publication number
DE3854276D1
DE3854276D1 DE3854276T DE3854276T DE3854276D1 DE 3854276 D1 DE3854276 D1 DE 3854276D1 DE 3854276 T DE3854276 T DE 3854276T DE 3854276 T DE3854276 T DE 3854276T DE 3854276 D1 DE3854276 D1 DE 3854276D1
Authority
DE
Germany
Prior art keywords
carrying
same
sputtering method
cathode sputtering
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854276T
Other languages
English (en)
Other versions
DE3854276T2 (de
Inventor
Hideki Tateishi
Hiroshi Saito
Shinji Sasaki
Mitsuaki Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62000363A external-priority patent/JPH0791639B2/ja
Priority claimed from JP62054005A external-priority patent/JP2674995B2/ja
Priority claimed from JP62077419A external-priority patent/JP2594935B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3854276D1 publication Critical patent/DE3854276D1/de
Publication of DE3854276T2 publication Critical patent/DE3854276T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE3854276T 1987-01-07 1988-01-05 Kathodenzerstäubungsverfahren und Vorrichtung zur Durchführung desselben. Expired - Fee Related DE3854276T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62000363A JPH0791639B2 (ja) 1987-01-07 1987-01-07 スパツタ方法
JP62054005A JP2674995B2 (ja) 1987-03-11 1987-03-11 基板処理方法およびその装置
JP62077419A JP2594935B2 (ja) 1987-04-01 1987-04-01 スパツタ成膜方法と装置

Publications (2)

Publication Number Publication Date
DE3854276D1 true DE3854276D1 (de) 1995-09-14
DE3854276T2 DE3854276T2 (de) 1996-01-11

Family

ID=27274437

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854276T Expired - Fee Related DE3854276T2 (de) 1987-01-07 1988-01-05 Kathodenzerstäubungsverfahren und Vorrichtung zur Durchführung desselben.

Country Status (4)

Country Link
US (1) US4853102A (de)
EP (1) EP0275021B1 (de)
KR (1) KR910001879B1 (de)
DE (1) DE3854276T2 (de)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
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DE3834984A1 (de) * 1988-10-14 1990-04-19 Leybold Ag Einrichtung zur erzeugung von elektrisch geladenen und/oder ungeladenen teilchen
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
EP0396919A3 (de) * 1989-05-08 1991-07-10 Applied Materials, Inc. Plasma-Reaktor und Halbleiterbearbeitungsverfahren
US5225024A (en) * 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
SK277865B6 (en) * 1989-08-14 1995-05-10 Stanislav Kadlec Method of sputtering of layers and device for realization of this method
EP0465733A1 (de) * 1990-07-13 1992-01-15 Consorzio Ce.Te.V. Centro Tecnologie Del Vuoto Vakuum-Ionenplattierungsverfahren zur Erzeugung von Dünnschichten
JP3056772B2 (ja) * 1990-08-20 2000-06-26 株式会社日立製作所 プラズマの制御方法ならびにプラズマ処理方法およびその装置
JP3231900B2 (ja) * 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
US5539274A (en) * 1993-09-07 1996-07-23 Tokyo Electron Limited Electron beam excited plasma system
US5496455A (en) * 1993-09-16 1996-03-05 Applied Material Sputtering using a plasma-shaping magnet ring
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
DE4441117C1 (de) * 1994-11-18 1995-10-26 Plasma Applikation Mbh Ges Verfahren zur Beschichtung von Substraten und Vorrichtung zur Durchführung des Verfahrens
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
EP0799903A3 (de) * 1996-04-05 1999-11-17 Applied Materials, Inc. Verfahren zum Sputtern eines Metalls auf ein Substrat und Vorrichtung zur Behandlung von Halbleitern
TW402778B (en) * 1996-07-12 2000-08-21 Applied Materials Inc Aluminum hole filling using ionized metal adhesion layer
JP4355036B2 (ja) * 1997-03-18 2009-10-28 キヤノンアネルバ株式会社 イオン化スパッタリング装置
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
JPH11172432A (ja) * 1997-12-16 1999-06-29 Hitachi Ltd 磁性膜形成装置
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6773562B1 (en) * 1998-02-20 2004-08-10 Applied Materials, Inc. Shadow frame for substrate processing
US6106682A (en) * 1998-05-22 2000-08-22 Cvc Products, Inc. Thin-film processing electromagnet for low-skew magnetic orientation
US6042707A (en) * 1998-05-22 2000-03-28 Cvc Products, Inc. Multiple-coil electromagnet for magnetically orienting thin films
US6497796B1 (en) * 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6620298B1 (en) * 1999-04-23 2003-09-16 Matsushita Electric Industrial Co., Ltd. Magnetron sputtering method and apparatus
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US6899795B1 (en) * 2000-01-18 2005-05-31 Unaxis Balzers Aktiengesellschaft Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers
US6352629B1 (en) * 2000-07-10 2002-03-05 Applied Materials, Inc. Coaxial electromagnet in a magnetron sputtering reactor
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
JP4339597B2 (ja) 2001-04-20 2009-10-07 ジェネラル・プラズマ・インコーポレーテッド ダイポールイオン源
US20030192646A1 (en) * 2002-04-12 2003-10-16 Applied Materials, Inc. Plasma processing chamber having magnetic assembly and method
US6852202B2 (en) * 2002-05-21 2005-02-08 Applied Materials, Inc. Small epicyclic magnetron with controlled radial sputtering profile
US6841050B2 (en) * 2002-05-21 2005-01-11 Applied Materials, Inc. Small planetary magnetron
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7932678B2 (en) * 2003-09-12 2011-04-26 General Plasma, Inc. Magnetic mirror plasma source and method using same
US7294224B2 (en) * 2003-12-01 2007-11-13 Applied Materials, Inc. Magnet assembly for plasma containment
US20050211547A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
DK2251453T3 (da) 2009-05-13 2014-07-07 Sio2 Medical Products Inc Beholderholder
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
KR20110039920A (ko) * 2009-10-12 2011-04-20 삼성모바일디스플레이주식회사 스퍼터링 장치
CN102859028A (zh) * 2010-03-22 2013-01-02 应用材料公司 使用远程等离子体源的介电沉积
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (de) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CN110074968B (zh) 2013-03-11 2021-12-21 Sio2医药产品公司 涂布包装材料
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP3122917B1 (de) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
JP2018523538A (ja) 2015-08-18 2018-08-23 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 低酸素透過速度を有する薬剤包装及び他の包装
JP7471236B2 (ja) * 2018-02-13 2024-04-19 エヴァテック・アーゲー マグネトロンスパッタリングのための方法および装置
DE102019119384A1 (de) * 2019-07-17 2021-01-21 VON ARDENNE Asset GmbH & Co. KG Prozessieranordnung, Sputtervorrichtung, Verfahren

Family Cites Families (6)

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US3325394A (en) * 1963-07-01 1967-06-13 Ibm Magnetic control of film deposition
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
US4605469A (en) * 1983-11-10 1986-08-12 Texas Instruments Incorporated MBE system with in-situ mounting
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EP0173164B1 (de) * 1984-08-31 1988-11-09 Hitachi, Ltd. Aufstäuben mittels Mikrowellen
US4670126A (en) * 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system

Also Published As

Publication number Publication date
DE3854276T2 (de) 1996-01-11
EP0275021A2 (de) 1988-07-20
EP0275021A3 (en) 1990-08-08
US4853102A (en) 1989-08-01
EP0275021B1 (de) 1995-08-09
KR880009454A (ko) 1988-09-15
KR910001879B1 (ko) 1991-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee