CN1082243C - 处理半导体基片的半导体处理系统和方法 - Google Patents
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Abstract
一种改进的装置(16，18，20，22，24，25)和方法，提供了在腐蚀操作和剥离操作之间的一个整体的剥离前清洗操作。本发明用于在单一系统中进行半导体基片(A)的干法腐蚀、湿法剥离前清洗、干法光刻胶剥离和湿法最后清洗的连续处理。
Description
本发明涉及一种半导体基片处理系统，尤其涉及一种提供一个集成的腐蚀后和剥离前的清洗操作的改进的基片处理装置和方法，
集成电路的制备要求在微小的芯片上的不同半导体器件之间形成互连的导电通道。这种导电通道可能由纯金属、金属合金、金属混合物或硅薄膜组成，如铝、多晶硅或钨的硅化物。在典型的处理中，需要刻图形的一层首先被淀积到半导体基片上，然后光刻胶淀积在下面的淀积层顶部。图形在光刻胶层上形成，产生的光刻胶掩膜暴露并覆盖下面的淀积层的某些区域。光刻胶掩膜开口区域所暴露出的淀积材料，通常通过干法等离子体腐蚀技术除去。这种干法等离子体处理在等离子体腐蚀后，在光刻胶掩膜和下面的淀积层上会留下残留物。如果在金属腐蚀后残留在光刻胶上的残留物没有被除去，将产生下面的金属被侵蚀或各种器件性能的问题。有很多方法用来除去残留物以防止侵蚀，但没有一种方法完全成功。
对侵蚀和残留物问题的一种解决方法是在等离子体腐蚀后立即除去光刻胶。现在许多基片处理系统已经集成了腐蚀模块和光刻胶剥离模块，使得在腐蚀后基片可以直接传输到剥离模块以除去光刻胶，从而尽可能减少侵蚀的机会。但这种方法有一个明显的缺点。因为除去光刻胶一般要用到氧气等离子体，而腐蚀后留下的残留物在等离子体中会转化为不溶解的氧化物，从而导致不完全的光刻胶剥离，不完全的残留物去除或需要加长剥离过程，所有这些都降低生产率或产量。
解决侵蚀和残留物问题的另一种方法，是在溶剂中进行剥离前清洗以除去水溶性残留物，这种水溶性残留物会在光刻胶剥离前侵蚀下面的金属和产生其他不良的影响。但要进行剥离前清洗，基片必须从腐蚀设备中取出，并用分离的设备清洗。基片在分离处理设备之间的传送不仅增加了总的处理时间，而且增加接触，因而增加基片沾污的机会。再者，用分离的设备进行腐蚀、光刻胶剥离和清洗过程会明显增加基片制造设施占用的空间。这样，集成电路制造商面临这样的困境，要么不进行清洗而冒侵蚀之险，要么拿下来清洗而冒由于增加的接触而产生的潜在沾污和较低的产量的风险。
于是，就有了对这样一种基片处理系统的需求，这种系统可以在单一系统中，对基片进行从干法等离子体腐蚀到湿法剥离前清洗的连续处理，以控制侵蚀并除去残留物。
总体来说，本发明是指一个模块，一个使得在腐蚀和剥离工艺之间可以进行清洗操作的集成的基片处理系统。在一优选实施例中，半导体基片可以在单一系统中进行干法腐蚀、湿法剥离前清洗、干法光刻胶剥离和湿法最终清洗的连续处理。
本发明提供一基片处理系统，通过光刻胶剥离前的清洗除去基片上的残留物，以实现干法等离子体腐蚀后的侵蚀控制和残留物去除。剥离前清洗不仅防止侵蚀，而且避免在光刻胶剥离期间残留物氧化变成不溶解的氧化物。结果是光刻胶剥离所需的时间减少。再者，通过在与腐蚀过程相同系统中进行剥离前清洗，本发明排除了对把基片从工艺线取出拿到分离的清洗台的需求，因而增加了基片制造的成品率。另外，本发明减少了基片接触的次数，这意味着减小了基片沾污的机会。本发明也排除了对拥有不同类型的设备以进行腐蚀、剥离前清洗、光刻胶剥离和剥离后清洗的需求。取而代之的是单一紧凑的、小体积的系统，具有在单一系统中进行包括剥离前清洗的多项处理功能，因而减少了对基片制造设施空间的需求。
从以下关于本发明、实施例、附图和附加的权利要求的详细描述，对本领域的技术人员来讲，本发明的优点和目标将是显而易见的。
图1是部分设计好的基片处理系统的顶视图。
图2是图1基片处理系统的顶视图的简图，表示出在可锁定的进样室的一基片。
图3是图1基片处理系统的顶视图的简图，表示出在可锁定的进样室的一基片，和在调整模块中的一基片。
图4是图1基片处理系统的顶视图的简图，表示出在可锁定的进样室的一基片，和各在两个腐蚀模块中一基片。
图5是图1基片处理系统的顶视图的简图，表示出原来在可锁定的进样室的一基片已被传送到调整模块
图6是图1基片处理系统的顶视图的简图，表示出原来在腐蚀模块的一基片已被传送到剥离模块，然后到清洗模块
图7是图1基片处理系统的顶视图的简图，表示出原来在清洗模块的一基片已被传送回到剥离模块
图8是图1基片处理系统的顶视图的简图，表示出原来在剥离模块的一基片已被传送到清洗模块
图9是图1基片处理系统的顶视图的简图，表示出原来在清洗模块的一基片已被传送到退片盒
图10是图1基片处理系统的顶视图的简图，表示出原来在腐蚀模块的一基片已被传送到剥离模块，以及原来在调整模块的一基片已被传送到腐蚀模块。
图1说明根据本发明的实施例。此系统包括一真空可锁定的进样室16、一调整模块18、两个腐蚀模块20和22、和一剥离模块24，所有这些都通过可关闭的开口连接到中央真空室26，并通过计算机过程控制系统(未示出)操作。可锁定的进样室16包含一内置的盒仓，用于放置一基片盒(进样盒)。真空室26有一机械式基片操作系统38，用于把基片从一个模块传送到另一个模块。剥离模块24通过可关闭的开口27连接到大气压下机械式基片处理系统32，并依次连接到清洗模块25和大气压盒模块34(出样模块)。一例典型的清洗模块所用的是Semitool Equinox的清洗系统。大气压下机械式基片处理系统32作用于承接处理完成后的基片的大气压盒模块34。另外，第二个机械式基片处理系统32在剥离模块24和清洗模块25之间传送基片。在清洗期间，清洗模块25和机械操纵系统32被设计成保持剥离模块24进行剥离所要求的基片调整的角度。本发明的操作通过计算机系统自动和可编程地进行。
图2-10说明了本发明的优选实施例一般的处理步骤。图2展示了一基片装在可锁定的进样室16中的一真空盒仓上。一旦可锁定的进样室16被抽到真空，位于可锁定的进样室16和中央真空室26之间的门阀37就开启，并提供一条通过中央机械手38到可锁定的进样室16中的基片盒的途径。中央机械手38传送一基片(A)从可锁定的进样室16到调整模块18，在该处对基片进行theta角调整，如图3所示。此基片然后通过可关闭的开口40传送到第一腐蚀模块20进行腐蚀。在第一个基片在模块20中腐蚀的同时，中央机械手38从可锁定的进样室16中的基片盒里拿起第二个基片(B)，并传送到调整模块18以对基片进行theta角调整。一旦调整结束，基片(B)就被通过可关闭的开口42传送到第二个腐蚀模块22，如图4所示。当基片A和B还在各自的腐蚀模块中时，中央机械手38从可锁定的进样室16中的基片盒里拿起第三个基片(B)，并传送到调整模块18对基片进行theta角调整，如图5所示。
当第一个基片(A)腐蚀完毕，，中央机械手38就通过可关闭的开口40移走此基片，并把它通过可关闭的开口44放进剥离模块24。在此时剥离模块中没进行任何处理。一旦可关闭开口44关闭并密封好，剥离模块24就放气至大气压。在剥离模块24放气时，中央机械手38拿起在调整模块的基片C，并通过可关闭的开口40把它传送到第一个腐蚀模块20。当基片C在第一个腐蚀模块20中腐蚀时，中央机械手38从基片盒中拿起第四个基片(D)，并传送到调整模块18作theta角调整。与此同时，一旦剥离模块24放气至大气压，位于大气压机械手32和剥离模块24之间的的可关闭开口27开启，可使大气压机械手32从剥离模块24到清洗模块25来传送基片A，如图6所示。基片A然后在清洗模块25中经历腐蚀前清洗并甩干。一旦清洗和甩干完成，大气压机械手32就通过可开启的开口27把基片A从清洗模块25传送回剥离模块24，如图7所示。开口27关闭后，剥离模块24被抽到真空，采用氧气等离子体剥离在基片上的光刻胶。一旦光刻胶剥离完成，剥离模块24再次放气至大气压。放气完成后，大气压机械手32把基片通过可关闭的开口27从剥离模块24传送到清洗模块25，以作最后的清洗和干燥，如图8所示。基片清洗和干燥后，大气压机械手32把它传送到出片盒34，如图9所示。处理过程包括剥离前清洗、剥离和清洗，然后在第二腐蚀模块22中对基片B重复，基片B由中央机械手38通过可关闭的开口42传送并放在剥离模块24中，如图10所示。
虽然本发明是与具体实施例结合起来进行描述的，但本发明并不仅限于这种实施例，而是在所附的权利要求的范围内包含修改及等效的结构。例如，实施例设计了两个腐蚀模块，但所获得益处与腐蚀模块的数量无关。
Claims (11)
1.一种适用于处理半导体基片的半导体处理系统，包括：
a.一中央真空室；
b.一可锁定的真空进样室，具有至少一个可关闭的开口，并连接到所述的中央真空室；
c.一腐蚀模块，包括一反应室和至少一个可关闭的开口，并连接到所述的中央真空室；
d.一剥离模块，包括一反应室及至少一个可关闭的开口，并连接到所述的中央真空室；
e.一清洗模块，可连通到所述的剥离模块，且和所述中央真空室不连通；
f.一第一传送装置，用于在所述清洗模块和所述剥离模块间传送半导体基片；
g.一第二传送装置，其位于所述中央真空室中且用于将半导体基片传送进和传送出所述中央真空室，以及传送进和传送出每个所述可锁定的进样室、所述腐蚀模块和所述剥离模块；以及
h.所述中央真空室、所述腐蚀模块、所述剥离模块、所述清洗模块和所述第一和第二传送装置被集成到所述半导体处理系统中，从而对于要从所述腐蚀模块传送到所述清洗模块的半导体基片来说，所述第二传送装置将半导体基片从所述腐蚀模块通过所述中央真空室传送到所述剥离模块，且所述第一传送装置将半导体基片从所述剥离模块传送到所述清洗模块。
2.如权利要求1所述的半导体处理系统，其中所述第一传送装置工作于大气压下。
3.如权利要求1所述的半导体处理系统，其中所述剥离模块进一步包括一电阻加热的基片吸盘。
4.如权利要求1所述的半导体处理系统，其中所述清洗模块包括一液体喷射器。
5.如权利要求1所述的半导体处理系统，其中所述清洗模块包括一可使半导体基片干燥的干燥器。
6.一种用于在一集成的基片处理装置中处理半导体基片的方法，所述集成的基片处理装置包括：
a.一中央真空室；
b.一和所述中央真空室相连的腐蚀模块；
c.一和所述中央真空室相连的剥离模块；
d.一清洗模块，可连通到所述剥离模块且和所述中央真空室不连通。
e.一第一传送装置，用于在所述清洗模块和所述剥离模块间传送半导体基片；
f.一第二传送装置，其位于所述中央真空室中，且用于在所述中央真空室、所述腐蚀模块和所述剥离模块间传送半导体基片；
所述方法包括如下步骤：
g.在所述装置的腐蚀模块中除去所述半导体基片上的材料；
h.用所述第一和第二传送装置，将半导体基片从所述腐蚀模块通过所述中央真空室和所述剥离模块传送到所述清洗模块；
i.在所述腐蚀模块中的除去步骤后，在所述装置的清洗模块中清洗所述半导体基片；
i.将该半导体基片传送回所述剥离模块；以及
k.在所述装置的剥离模块中除去该半导体基片上的掩膜物质；
l.将该半导体基片传送回清洗模块；以及
m.在所述掩膜除去步骤后，在所述清洗模块中清洗该半导体基片。
7.如权利要求6所述的处理半导体基片的方法，其中，所述材料除去步骤、所述清洗步骤以及所述掩膜除去步骤是在用户可编程计算装置的控制下自动进行的。
8.如权利要求6所述的处理半导体基片的方法，其中，所述在所述清洗模块和所述剥离模块间传送所述基片的步骤是在大气压下进行的。
9.如权利要求6所述的处理半导体基片的方法，其中，所述清洗步骤采用溶液。
10.如权利要求6所述的处理半导体基片的方法，其中，所述清洗步骤也完成干燥所述半导体基片的步骤。
11.如权利要求6所述的处理半导体基片的方法，其中所述清洗步骤、所述传送步骤和所述除去步骤是在用户可编程计算装置的控制下自动进行的。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/438,261 US5672239A (en) | 1995-05-10 | 1995-05-10 | Integrated semiconductor wafer processing system |
| US08/438,261 | 1995-05-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1184556A CN1184556A (zh) | 1998-06-10 |
| CN1082243C true CN1082243C (zh) | 2002-04-03 |
Family
ID=23739925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96193829A Expired - Fee Related CN1082243C (zh) | 1995-05-10 | 1996-03-28 | 处理半导体基片的半导体处理系统和方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5672239A (zh) |
| EP (2) | EP1686615A1 (zh) |
| JP (1) | JP3686678B2 (zh) |
| KR (1) | KR100441637B1 (zh) |
| CN (1) | CN1082243C (zh) |
| AT (1) | ATE326064T1 (zh) |
| CA (1) | CA2220046A1 (zh) |
| DE (1) | DE69636117D1 (zh) |
| WO (1) | WO1996036069A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100375230C (zh) * | 2003-06-02 | 2008-03-12 | 周星工程股份有限公司 | 用于群集系统的传送室 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6672819B1 (en) | 1995-07-19 | 2004-01-06 | Hitachi, Ltd. | Vacuum processing apparatus and semiconductor manufacturing line using the same |
| JPH0936198A (ja) | 1995-07-19 | 1997-02-07 | Hitachi Ltd | 真空処理装置およびそれを用いた半導体製造ライン |
| KR100218269B1 (ko) * | 1996-05-30 | 1999-09-01 | 윤종용 | 건식 에칭기의 잔류 가스 제거 장치 및 방법 |
| US6849153B2 (en) * | 1998-04-16 | 2005-02-01 | Siemens Aktiengesellschaft | Removal of post-rie polymer on A1/CU metal line |
| US6348159B1 (en) | 1999-02-15 | 2002-02-19 | First Solar, Llc | Method and apparatus for etching coated substrates |
| US6432832B1 (en) * | 1999-06-30 | 2002-08-13 | Lam Research Corporation | Method of improving the profile angle between narrow and wide features |
| JP3348700B2 (ja) * | 1999-08-19 | 2002-11-20 | 株式会社東京精密 | エッチング装置 |
| US6451158B1 (en) | 1999-12-21 | 2002-09-17 | Lam Research Corporation | Apparatus for detecting the endpoint of a photoresist stripping process |
| KR100675316B1 (ko) * | 1999-12-22 | 2007-01-26 | 엘지.필립스 엘시디 주식회사 | 세정장비 일체형 에치/스트립 장치 |
| US20010043989A1 (en) * | 2000-05-18 | 2001-11-22 | Masami Akimoto | Film forming apparatus and film forming method |
| KR100793724B1 (ko) * | 2001-05-04 | 2008-01-10 | 삼성전자주식회사 | 액정표시장치용 식각모듈 |
| WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| US6676493B1 (en) | 2001-12-26 | 2004-01-13 | Lam Research Corporation | Integrated planarization and clean wafer processing system |
| JP4195227B2 (ja) * | 2002-02-22 | 2008-12-10 | 東京エレクトロン株式会社 | 被処理体の導入ポート構造 |
| US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
| US6921555B2 (en) | 2002-08-06 | 2005-07-26 | Tegal Corporation | Method and system for sequential processing in a two-compartment chamber |
| KR100505693B1 (ko) * | 2003-06-26 | 2005-08-03 | 삼성전자주식회사 | 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법 |
| KR100770792B1 (ko) * | 2006-07-31 | 2007-10-26 | 세메스 주식회사 | 에칭부와 세정부를 겸비한 건식 에쳐 |
| CN102044407B (zh) * | 2009-10-20 | 2012-04-18 | 中芯国际集成电路制造(上海)有限公司 | 芯片的清洗方法 |
| KR101369511B1 (ko) * | 2012-01-11 | 2014-03-06 | 이완기 | 기판처리장치 및 방법 |
| US9373533B2 (en) * | 2012-12-31 | 2016-06-21 | Cascade Microtech, Inc. | Systems and methods for providing wafer access in a wafer processing system |
| KR101919122B1 (ko) * | 2014-08-12 | 2018-11-15 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5135608A (en) * | 1989-07-11 | 1992-08-04 | Hitachi, Ltd. | Method of producing semiconductor devices |
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59186326A (ja) * | 1983-04-06 | 1984-10-23 | Hitachi Ltd | プラズマ処理装置 |
| US4693777A (en) * | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
| JPS63252439A (ja) * | 1986-12-19 | 1988-10-19 | アプライド マテリアルズインコーポレーテッド | 多チャンバの統合処理システム |
| JPS63303060A (ja) * | 1987-05-30 | 1988-12-09 | Tokuda Seisakusho Ltd | 真空処理装置 |
| US4851101A (en) * | 1987-09-18 | 1989-07-25 | Varian Associates, Inc. | Sputter module for modular wafer processing machine |
| US5376212A (en) * | 1992-02-18 | 1994-12-27 | Tokyo Electron Yamanashi Limited | Reduced-pressure processing apparatus |
-
1995
- 1995-05-10 US US08/438,261 patent/US5672239A/en not_active Expired - Lifetime
-
1996
- 1996-03-28 WO PCT/US1996/004433 patent/WO1996036069A1/en active IP Right Grant
- 1996-03-28 EP EP06076007A patent/EP1686615A1/en not_active Withdrawn
- 1996-03-28 CN CN96193829A patent/CN1082243C/zh not_active Expired - Fee Related
- 1996-03-28 EP EP96909902A patent/EP0826231B1/en not_active Expired - Lifetime
- 1996-03-28 DE DE69636117T patent/DE69636117D1/de not_active Expired - Lifetime
- 1996-03-28 AT AT96909902T patent/ATE326064T1/de not_active IP Right Cessation
- 1996-03-28 JP JP53405296A patent/JP3686678B2/ja not_active Expired - Lifetime
- 1996-03-28 CA CA002220046A patent/CA2220046A1/en not_active Abandoned
- 1996-03-28 KR KR1019970707898A patent/KR100441637B1/ko not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5135608A (en) * | 1989-07-11 | 1992-08-04 | Hitachi, Ltd. | Method of producing semiconductor devices |
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100375230C (zh) * | 2003-06-02 | 2008-03-12 | 周星工程股份有限公司 | 用于群集系统的传送室 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11505669A (ja) | 1999-05-21 |
| EP0826231B1 (en) | 2006-05-10 |
| EP0826231A1 (en) | 1998-03-04 |
| DE69636117D1 (de) | 2006-06-14 |
| CN1184556A (zh) | 1998-06-10 |
| KR100441637B1 (ko) | 2004-11-06 |
| KR19990008372A (ko) | 1999-01-25 |
| ATE326064T1 (de) | 2006-06-15 |
| EP1686615A1 (en) | 2006-08-02 |
| US5672239A (en) | 1997-09-30 |
| EP0826231A4 (en) | 2004-05-19 |
| JP3686678B2 (ja) | 2005-08-24 |
| CA2220046A1 (en) | 1996-11-14 |
| WO1996036069A1 (en) | 1996-11-14 |
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