DE69630496D1 - Verfahren zum Reinigen einer alkalischen Lösung und Methode zum Ätzen von Halbleiterscheiben - Google Patents

Verfahren zum Reinigen einer alkalischen Lösung und Methode zum Ätzen von Halbleiterscheiben

Info

Publication number
DE69630496D1
DE69630496D1 DE69630496T DE69630496T DE69630496D1 DE 69630496 D1 DE69630496 D1 DE 69630496D1 DE 69630496 T DE69630496 T DE 69630496T DE 69630496 T DE69630496 T DE 69630496T DE 69630496 D1 DE69630496 D1 DE 69630496D1
Authority
DE
Germany
Prior art keywords
cleaning
alkaline solution
semiconductor wafers
etching semiconductor
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69630496T
Other languages
English (en)
Other versions
DE69630496T2 (de
Inventor
Masami Nakano
Isao Uchiyama
Toshio Ajito
Hideo Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69630496D1 publication Critical patent/DE69630496D1/de
Publication of DE69630496T2 publication Critical patent/DE69630496T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01D—COMPOUNDS OF ALKALI METALS, i.e. LITHIUM, SODIUM, POTASSIUM, RUBIDIUM, CAESIUM, OR FRANCIUM
    • C01D1/00—Oxides or hydroxides of sodium, potassium or alkali metals in general
    • C01D1/04—Hydroxides
    • C01D1/28—Purification; Separation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69630496T 1995-08-29 1996-08-28 Verfahren zum Reinigen einer alkalischen Lösung und Methode zum Ätzen von Halbleiterscheiben Expired - Lifetime DE69630496T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22035095 1995-08-29
JP22035095 1995-08-29
JP21850396A JP3678505B2 (ja) 1995-08-29 1996-08-20 半導体ウェーハをエッチングするためのアルカリ溶液の純化方法及び半導体ウェーハのエッチング方法
JP21850396 1996-08-20

Publications (2)

Publication Number Publication Date
DE69630496D1 true DE69630496D1 (de) 2003-12-04
DE69630496T2 DE69630496T2 (de) 2004-05-06

Family

ID=26522596

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630496T Expired - Lifetime DE69630496T2 (de) 1995-08-29 1996-08-28 Verfahren zum Reinigen einer alkalischen Lösung und Methode zum Ätzen von Halbleiterscheiben

Country Status (6)

Country Link
US (1) US6110839A (de)
EP (1) EP0761599B1 (de)
JP (1) JP3678505B2 (de)
KR (1) KR100418443B1 (de)
DE (1) DE69630496T2 (de)
MY (1) MY119496A (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506172B2 (ja) * 1997-03-13 2004-03-15 信越半導体株式会社 半導体ウェーハのエッチング方法
US6074960A (en) * 1997-08-20 2000-06-13 Micron Technology, Inc. Method and composition for selectively etching against cobalt silicide
MY119304A (en) * 1997-12-11 2005-04-30 Shinetsu Handotai Kk Silicon wafer etching method and silicon wafer etchant
KR20010064043A (ko) * 1999-12-24 2001-07-09 구본준, 론 위라하디락사 박막트랜지스터 및 액정표시장치용 어레이기판제조방법
JP2001250807A (ja) * 1999-12-28 2001-09-14 Shin Etsu Handotai Co Ltd エッチング液、エッチング方法及び半導体シリコンウェーハ
US6503363B2 (en) 2000-03-03 2003-01-07 Seh America, Inc. System for reducing wafer contamination using freshly, conditioned alkaline etching solution
WO2004027840A2 (en) * 2002-09-18 2004-04-01 Memc Electronic Materials, Inc. Process for etching silicon wafers
JP4424039B2 (ja) 2004-04-02 2010-03-03 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
WO2006009668A1 (en) * 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
JP4487753B2 (ja) * 2004-12-10 2010-06-23 株式会社Ｓｕｍｃｏ シリコンウェーハ用のアルカリエッチング液及び該エッチング液を用いたエッチング方法
JP4517867B2 (ja) * 2005-01-31 2010-08-04 株式会社Ｓｕｍｃｏ シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法
TW200745313A (en) * 2006-05-26 2007-12-16 Wako Pure Chem Ind Ltd Substrate etching liquid
JP5142592B2 (ja) 2007-06-06 2013-02-13 関東化学株式会社 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物
JP5040564B2 (ja) * 2007-09-28 2012-10-03 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
US8192822B2 (en) * 2008-03-31 2012-06-05 Memc Electronic Materials, Inc. Edge etched silicon wafers
TW201006765A (en) * 2008-08-07 2010-02-16 Yeou Fa Chemical Co Ltd Method for purifying potassium hydroxide aqueous solution rich in silicon impurities
WO2010059556A1 (en) * 2008-11-19 2010-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539295A (en) * 1976-07-13 1978-01-27 Nippon Soda Co Ltd Production of high purity inorganic compounds
JPS5547221A (en) * 1978-09-27 1980-04-03 Tsurumi Soda Kk Production of purified aqueous caustic alkali solution
JPS5574142A (en) * 1978-11-28 1980-06-04 Fuji Electric Co Ltd Refining of semiconductor etching alkaline liquid
US4859280A (en) * 1986-12-01 1989-08-22 Harris Corporation Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions
JP2994405B2 (ja) * 1989-08-11 1999-12-27 関東化学株式会社 水酸化アルカリの精製法
US5348617A (en) * 1991-12-23 1994-09-20 Iowa State University Research Foundation, Inc. Selective etching process
JP3072876B2 (ja) * 1993-09-17 2000-08-07 日曹エンジニアリング株式会社 エッチング液の精製方法

Also Published As

Publication number Publication date
JP3678505B2 (ja) 2005-08-03
EP0761599A2 (de) 1997-03-12
DE69630496T2 (de) 2004-05-06
US6110839A (en) 2000-08-29
EP0761599B1 (de) 2003-10-29
MY119496A (en) 2005-06-30
JPH09129624A (ja) 1997-05-16
KR100418443B1 (ko) 2004-06-30
EP0761599A3 (de) 1999-01-07
KR970013092A (ko) 1997-03-29

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