DE69025244D1 - Reinigungsverfahren für eine Anlage zur Behandlung von Halbleiterscheiben - Google Patents

Reinigungsverfahren für eine Anlage zur Behandlung von Halbleiterscheiben

Info

Publication number
DE69025244D1
DE69025244D1 DE69025244T DE69025244T DE69025244D1 DE 69025244 D1 DE69025244 D1 DE 69025244D1 DE 69025244 T DE69025244 T DE 69025244T DE 69025244 T DE69025244 T DE 69025244T DE 69025244 D1 DE69025244 D1 DE 69025244D1
Authority
DE
Germany
Prior art keywords
cleaning process
semiconductor wafers
treating semiconductor
treating
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025244T
Other languages
English (en)
Other versions
DE69025244T2 (de
Inventor
Makoto Nagashima
Naoaki Kobayashi
Jerry Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69025244D1 publication Critical patent/DE69025244D1/de
Publication of DE69025244T2 publication Critical patent/DE69025244T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE1990625244 1989-08-25 1990-08-24 Reinigungsverfahren für eine Anlage zur Behandlung von Halbleiterscheiben Expired - Fee Related DE69025244T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39868989A 1989-08-25 1989-08-25
US41143389A 1989-09-22 1989-09-22

Publications (2)

Publication Number Publication Date
DE69025244D1 true DE69025244D1 (de) 1996-03-21
DE69025244T2 DE69025244T2 (de) 1996-06-27

Family

ID=27016336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990625244 Expired - Fee Related DE69025244T2 (de) 1989-08-25 1990-08-24 Reinigungsverfahren für eine Anlage zur Behandlung von Halbleiterscheiben

Country Status (2)

Country Link
EP (1) EP0416400B1 (de)
DE (1) DE69025244T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
JPH09139349A (ja) * 1995-06-07 1997-05-27 Varian Assoc Inc スパッタクリーニングチャンバーから堆積物をクリーニングする方法
US5770135A (en) * 1996-07-01 1998-06-23 Air Products And Chemicals, Inc. Process for producing permeation resistant containers
DE19704533C2 (de) 1997-02-06 2000-10-26 Siemens Ag Verfahren zur Schichterzeugung auf einer Oberfläche
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US20010049181A1 (en) * 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
TW552306B (en) * 1999-03-26 2003-09-11 Anelva Corp Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
EP1614709A1 (de) * 2004-06-21 2006-01-11 Air Products And Chemicals, Inc. Verfahren zur Reduktion der Permeabilität von Plastikmaterialien
EP1609815B1 (de) * 2004-06-21 2008-09-03 Air Products And Chemicals, Inc. Verfahren zur Reduktion der Permeabilität von Plastikmaterialien
DE102013104105A1 (de) * 2013-04-23 2014-10-23 Aixtron Se MOCVD-Schichtwachstumsverfahren mit nachfolgendem mehrstufigen Reinigungsschritt
RU2669864C1 (ru) * 2017-08-03 2018-10-16 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Способ удаления перенапылённых углеводородных слоёв

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU586530B2 (en) * 1986-02-06 1989-07-13 University Of Dayton, The Process for removing protective coatings and bonding layers from metal parts
JP2618445B2 (ja) * 1987-06-26 1997-06-11 アプライド マテリアルズ インコーポレーテッド 反応器チャンバー自己清掃方法

Also Published As

Publication number Publication date
DE69025244T2 (de) 1996-06-27
EP0416400A1 (de) 1991-03-13
EP0416400B1 (de) 1996-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee