AT7491U1 - Werkstoff für leitbahnen aus kupferlegierung - Google Patents

Werkstoff für leitbahnen aus kupferlegierung Download PDF

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Publication number
AT7491U1
AT7491U1 AT0050104U AT501202004U AT7491U1 AT 7491 U1 AT7491 U1 AT 7491U1 AT 0050104 U AT0050104 U AT 0050104U AT 501202004 U AT501202004 U AT 501202004U AT 7491 U1 AT7491 U1 AT 7491U1
Authority
AT
Austria
Prior art keywords
interconnects
elements
group
sputtering target
alloy
Prior art date
Application number
AT0050104U
Other languages
German (de)
English (en)
Inventor
Gerhard Dr Leichtfried
Michael O'sullivan
Peter Dr Wilhartitz
Original Assignee
Plansee Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Ag filed Critical Plansee Ag
Priority to AT0050104U priority Critical patent/AT7491U1/de
Publication of AT7491U1 publication Critical patent/AT7491U1/de
Priority to JP2007520614A priority patent/JP2008506040A/ja
Priority to PCT/AT2005/000262 priority patent/WO2006005095A1/de
Priority to CN2005800236865A priority patent/CN1985014B/zh
Priority to KR1020077000235A priority patent/KR20070039914A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/10—Alloys based on copper with silicon as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
AT0050104U 2004-07-15 2004-07-15 Werkstoff für leitbahnen aus kupferlegierung AT7491U1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT0050104U AT7491U1 (de) 2004-07-15 2004-07-15 Werkstoff für leitbahnen aus kupferlegierung
JP2007520614A JP2008506040A (ja) 2004-07-15 2005-07-11 銅合金から製造した導電線のための材料
PCT/AT2005/000262 WO2006005095A1 (de) 2004-07-15 2005-07-11 Werkstoff für leitbahnen aus kupferlegierung
CN2005800236865A CN1985014B (zh) 2004-07-15 2005-07-11 铜合金制造的导线材料
KR1020077000235A KR20070039914A (ko) 2004-07-15 2005-07-11 구리 합금으로 제조되는 도선을 위한 재료

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0050104U AT7491U1 (de) 2004-07-15 2004-07-15 Werkstoff für leitbahnen aus kupferlegierung

Publications (1)

Publication Number Publication Date
AT7491U1 true AT7491U1 (de) 2005-04-25

Family

ID=38160537

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0050104U AT7491U1 (de) 2004-07-15 2004-07-15 Werkstoff für leitbahnen aus kupferlegierung

Country Status (5)

Country Link
JP (1) JP2008506040A (ja)
KR (1) KR20070039914A (ja)
CN (1) CN1985014B (ja)
AT (1) AT7491U1 (ja)
WO (1) WO2006005095A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007041730A1 (de) * 2005-10-14 2007-04-19 Plansee Se Rohrtarget
WO2007045387A1 (de) * 2005-10-19 2007-04-26 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen legierungen und h erstellverfahren
WO2008030368A1 (en) * 2006-09-08 2008-03-13 Tosoh Smd, Inc. Copper sputtering target with fine grain size and high electromigration resistance and methods of making the same
CN113718129A (zh) * 2021-08-30 2021-11-30 宁波金田铜业(集团)股份有限公司 铬锆铜合金及其制备方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006003279B4 (de) * 2006-01-23 2010-03-25 W.C. Heraeus Gmbh Sputtertarget mit hochschmelzender Phase
JP5125112B2 (ja) * 2006-07-31 2013-01-23 三菱マテリアル株式会社 熱欠陥発生のない液晶表示装置用配線および電極並びにそれらを形成するためのスパッタリングターゲット
JP2008051840A (ja) * 2006-08-22 2008-03-06 Mitsubishi Materials Corp 熱欠陥発生がなくかつ密着性に優れた液晶表示装置用配線および電極並びにそれらを形成するためのスパッタリングターゲット
JP5234306B2 (ja) * 2006-10-18 2013-07-10 三菱マテリアル株式会社 熱欠陥発生が少なくかつ表面状態の良好なｔｆｔトランジスターを用いたフラットパネルディスプレイ用配線および電極並びにそれらを形成するためのスパッタリングターゲット
JP2008107710A (ja) * 2006-10-27 2008-05-08 Mitsubishi Materials Corp 熱欠陥発生が少なくかつ表面状態の良好な液晶表示装置用配線および電極並びにそれらを形成するためのスパッタリングターゲット
US20090186230A1 (en) * 2007-10-24 2009-07-23 H.C. Starck Inc. Refractory metal-doped sputtering targets, thin films prepared therewith and electronic device elements containing such films
JP5099504B2 (ja) * 2008-01-18 2012-12-19 三菱マテリアル株式会社 密着性に優れた液晶表示装置用配線および電極
JP5207120B2 (ja) * 2008-02-05 2013-06-12 三菱マテリアル株式会社 熱欠陥発生がなくかつ密着力に優れた液晶表示装置用配線および電極
JP5008146B2 (ja) * 2008-02-29 2012-08-22 三菱マテリアル株式会社 密着性に優れた銅合金複合膜
JP5420328B2 (ja) 2008-08-01 2014-02-19 三菱マテリアル株式会社 フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP5541651B2 (ja) * 2008-10-24 2014-07-09 三菱マテリアル株式会社 薄膜トランジスター用配線膜形成用スパッタリングターゲット
US20140110849A1 (en) * 2011-03-01 2014-04-24 Jx Nippon Mining & Metals Corporation Copper-Titanium Alloy Sputtering Target, Semiconductor Wiring Line Formed Using the Sputtering Target, and Semiconductor Element and Device Each Equipped with the Semiconductor Wiring Line
JP5638697B2 (ja) 2012-01-25 2014-12-10 Jx日鉱日石金属株式会社 高純度銅クロム合金スパッタリングターゲット
CN102736333B (zh) * 2012-06-18 2015-07-15 深圳市华星光电技术有限公司 一种阵列基板、液晶显示装置和阵列基板的制作方法
JP5842806B2 (ja) * 2012-12-28 2016-01-13 三菱マテリアル株式会社 スパッタリングターゲット用銅合金製熱間圧延板、およびスパッタリングターゲット
KR20150133273A (ko) * 2013-03-25 2015-11-27 신닛테츠스미킨 카부시키카이샤 구리 합금 분말, 구리 합금 소결체 및 고속 철도용 브레이크 라이닝
JP6274026B2 (ja) * 2013-07-31 2018-02-07 三菱マテリアル株式会社 銅合金スパッタリングターゲット及び銅合金スパッタリングターゲットの製造方法
CN104046811B (zh) * 2014-06-05 2016-05-18 锐展(铜陵)科技有限公司 一种汽车电气部件用抗热应力铜合金线的制备方法
CN104046816A (zh) * 2014-06-05 2014-09-17 锐展(铜陵)科技有限公司 一种汽车工业用高强度铜合金线的制备方法
CN104046809A (zh) * 2014-06-05 2014-09-17 锐展(铜陵)科技有限公司 一种汽车电子设备用铜合金线的制备方法
JP6056876B2 (ja) 2015-01-07 2017-01-11 三菱マテリアル株式会社 超伝導安定化材
CN104992937A (zh) * 2015-05-27 2015-10-21 安徽捷澳电子有限公司 一种超极细单晶铜扁丝带及其制备方法
CN105023647A (zh) * 2015-07-13 2015-11-04 江苏亨通线缆科技有限公司 架空型两芯用户引入电缆
CN105047400A (zh) * 2015-09-16 2015-11-11 合肥海畅电气技术有限公司 避雷器检测装置的继电器线圈材料
JP6589569B2 (ja) * 2015-11-04 2019-10-16 三菱マテリアル株式会社 Ｃｕ合金スパッタリングターゲット及びＣｕ合金膜
CN105420534A (zh) * 2015-11-06 2016-03-23 广西南宁智翠科技咨询有限公司 一种超高导电率的合金导线
CN105568043A (zh) * 2016-02-03 2016-05-11 安徽华联电缆集团有限公司 一种钪合金高性能电缆
JP6299802B2 (ja) 2016-04-06 2018-03-28 三菱マテリアル株式会社 超伝導安定化材、超伝導線及び超伝導コイル
JP6299803B2 (ja) 2016-04-06 2018-03-28 三菱マテリアル株式会社 超伝導線、及び、超伝導コイル
CN106636668B (zh) * 2016-09-28 2019-01-18 中南大学 一种废旧电磁线铜精炼剂及其制备方法和应用
CN106282658A (zh) * 2016-10-11 2017-01-04 何国良 一种高导电率无银铜合金的新材料
CN106992164B (zh) * 2017-04-10 2019-03-01 江西蓝微电子科技有限公司 一种微电子封装用铜合金单晶键合丝及其制备方法
CN107799496B (zh) * 2017-09-01 2020-05-22 华南理工大学 一种电子封装用高可靠性铜合金键合丝及其制备方法
CN108220664A (zh) * 2017-12-31 2018-06-29 安徽晋源铜业有限公司 一种高强度铜丝的制备工艺
CN108359837B (zh) * 2018-03-16 2019-08-02 重庆鸽牌电工材料有限公司 一种高纯无氧高含银铜杆的制备方法
CN108588470A (zh) * 2018-03-19 2018-09-28 徐州九龙电子工业有限公司 一种高强度电缆线芯以及电缆线芯材料及其制作方法
CN109182831A (zh) * 2018-09-28 2019-01-11 浙江力博实业股份有限公司 一种拉制用铜带的制备方法
CN109285617A (zh) * 2018-10-29 2019-01-29 宁波来和圣诞礼品有限公司 一种用于led灯的导线
CN110004320B (zh) * 2019-05-15 2020-07-28 东北大学 一种高强高导Cu-Ag-Sc合金及其制备方法
CN111910101B (zh) * 2020-07-14 2021-08-03 中南大学 一种高纯度高强高导铜基靶材及其制备方法
CN112251627A (zh) * 2020-09-27 2021-01-22 北京科技大学 一种高强高导Cu-Sc合金及其制备方法
CN113088755A (zh) * 2021-04-01 2021-07-09 江西中晟金属有限公司 一种导电性能良好的铜线及其制备方法
CN116411202A (zh) * 2021-12-29 2023-07-11 无锡市蓝格林金属材料科技有限公司 一种铜锡合金线材及其制备方法
CN116287805A (zh) * 2023-03-20 2023-06-23 北京壹号金源品牌管理有限公司 一种微金饰品的制备方法

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007041730A1 (de) * 2005-10-14 2007-04-19 Plansee Se Rohrtarget
JP2008506852A (ja) * 2005-10-14 2008-03-06 プランゼー エスエー 管状ターゲット
AU2006301946B2 (en) * 2005-10-14 2010-07-01 Plansee Se Tube target
JP4896032B2 (ja) * 2005-10-14 2012-03-14 プランゼー エスエー 管状ターゲット
TWI403599B (zh) * 2005-10-14 2013-08-01 Plansee Se 管狀靶
US8900340B2 (en) 2005-10-14 2014-12-02 Plansee Se Tubular target and production method
US9890451B2 (en) 2005-10-14 2018-02-13 Plansee Se Tubular target and production method
WO2007045387A1 (de) * 2005-10-19 2007-04-26 W.C. Heraeus Gmbh Sputtertarget aus mehrkomponentigen legierungen und h erstellverfahren
WO2008030368A1 (en) * 2006-09-08 2008-03-13 Tosoh Smd, Inc. Copper sputtering target with fine grain size and high electromigration resistance and methods of making the same
CN113718129A (zh) * 2021-08-30 2021-11-30 宁波金田铜业(集团)股份有限公司 铬锆铜合金及其制备方法

Also Published As

Publication number Publication date
JP2008506040A (ja) 2008-02-28
CN1985014A (zh) 2007-06-20
KR20070039914A (ko) 2007-04-13
WO2006005095A1 (de) 2006-01-19
CN1985014B (zh) 2010-06-02

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