ZA936039B - Methods and apparatus for producing integrated circuit devices - Google Patents
Methods and apparatus for producing integrated circuit devicesInfo
- Publication number
- ZA936039B ZA936039B ZA936039A ZA936039A ZA936039B ZA 936039 B ZA936039 B ZA 936039B ZA 936039 A ZA936039 A ZA 936039A ZA 936039 A ZA936039 A ZA 936039A ZA 936039 B ZA936039 B ZA 936039B
- Authority
- ZA
- South Africa
- Prior art keywords
- integrated circuit
- circuit devices
- methods
- producing integrated
- producing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06579—TAB carriers; beam leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06589—Thermal management, e.g. cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dicing (AREA)
- Bipolar Transistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP1992/002134 WO1994007267A1 (en) | 1992-09-14 | 1992-09-14 | Methods and apparatus for producing integrated circuit devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA936039B true ZA936039B (en) | 1994-03-10 |
Family
ID=8165681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA936039A ZA936039B (en) | 1992-09-14 | 1993-08-18 | Methods and apparatus for producing integrated circuit devices |
Country Status (23)
Country | Link |
---|---|
US (2) | US5455455A (fi) |
EP (1) | EP0660967B1 (fi) |
JP (1) | JP3621093B2 (fi) |
KR (1) | KR100310220B1 (fi) |
AT (1) | ATE200593T1 (fi) |
AU (1) | AU2554192A (fi) |
BG (1) | BG99554A (fi) |
CA (1) | CA2144323C (fi) |
DE (1) | DE69231785T2 (fi) |
DK (1) | DK0660967T3 (fi) |
EC (1) | ECSP930975A (fi) |
FI (1) | FI951142A (fi) |
GT (1) | GT199300053A (fi) |
HU (1) | HUT73312A (fi) |
IL (1) | IL106710A (fi) |
MA (1) | MA25277A1 (fi) |
MX (1) | MX9305603A (fi) |
MY (1) | MY129454A (fi) |
NO (1) | NO950960L (fi) |
PL (1) | PL169823B1 (fi) |
PT (1) | PT101354A (fi) |
WO (1) | WO1994007267A1 (fi) |
ZA (1) | ZA936039B (fi) |
Families Citing this family (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
HUT73312A (en) * | 1992-09-14 | 1996-07-29 | Badehi | Method and apparatus for producing integrated circuit devices, and integrated circuit device |
IL106892A0 (en) * | 1993-09-02 | 1993-12-28 | Pierre Badehi | Methods and apparatus for producing integrated circuit devices |
IL108359A (en) * | 1994-01-17 | 2001-04-30 | Shellcase Ltd | Method and device for creating integrated circular devices |
US6117707A (en) * | 1994-07-13 | 2000-09-12 | Shellcase Ltd. | Methods of producing integrated circuit devices |
US5851845A (en) * | 1995-12-18 | 1998-12-22 | Micron Technology, Inc. | Process for packaging a semiconductor die using dicing and testing |
US5637916A (en) * | 1996-02-02 | 1997-06-10 | National Semiconductor Corporation | Carrier based IC packaging arrangement |
US5904546A (en) * | 1996-02-12 | 1999-05-18 | Micron Technology, Inc. | Method and apparatus for dicing semiconductor wafers |
US5952725A (en) * | 1996-02-20 | 1999-09-14 | Micron Technology, Inc. | Stacked semiconductor devices |
US5682065A (en) * | 1996-03-12 | 1997-10-28 | Micron Technology, Inc. | Hermetic chip and method of manufacture |
FR2748350B1 (fr) * | 1996-05-06 | 2000-07-13 | Solaic Sa | Composant electronique sous forme de circuit integre pour insertion a chaud dans un substrat et procedes pour sa fabrication |
US6784023B2 (en) * | 1996-05-20 | 2004-08-31 | Micron Technology, Inc. | Method of fabrication of stacked semiconductor devices |
US5930652A (en) * | 1996-05-28 | 1999-07-27 | Motorola, Inc. | Semiconductor encapsulation method |
AU6003696A (en) * | 1996-05-30 | 1998-01-05 | Pierre Badehi | I.c. device with concealed conductor lines |
KR100469516B1 (ko) * | 1996-07-12 | 2005-02-02 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 및 반도체 장치 |
US6881611B1 (en) * | 1996-07-12 | 2005-04-19 | Fujitsu Limited | Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device |
US5956605A (en) * | 1996-09-20 | 1999-09-21 | Micron Technology, Inc. | Use of nitrides for flip-chip encapsulation |
US6184063B1 (en) * | 1996-11-26 | 2001-02-06 | Texas Instruments Incorporated | Method and apparatus for breaking and separating a wafer into die using a multi-radii dome |
US5953588A (en) * | 1996-12-21 | 1999-09-14 | Irvine Sensors Corporation | Stackable layers containing encapsulated IC chips |
US5903437A (en) * | 1997-01-17 | 1999-05-11 | International Business Machines Corporation | High density edge mounting of chips |
US5818107A (en) * | 1997-01-17 | 1998-10-06 | International Business Machines Corporation | Chip stacking by edge metallization |
US6077757A (en) * | 1997-05-15 | 2000-06-20 | Nec Corporation | Method of forming chip semiconductor devices |
US5863813A (en) * | 1997-08-20 | 1999-01-26 | Micron Communications, Inc. | Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips |
US6096576A (en) | 1997-09-02 | 2000-08-01 | Silicon Light Machines | Method of producing an electrical interface to an integrated circuit device having high density I/O count |
DE19739684B4 (de) * | 1997-09-10 | 2006-04-13 | Robert Bosch Gmbh | Verfahren zur Herstellung von Chipstapeln |
JP3526731B2 (ja) * | 1997-10-08 | 2004-05-17 | 沖電気工業株式会社 | 半導体装置およびその製造方法 |
KR100273704B1 (ko) * | 1997-12-20 | 2000-12-15 | 윤종용 | 반도체기판제조방법 |
JP3514101B2 (ja) * | 1998-01-28 | 2004-03-31 | セイコーエプソン株式会社 | 半導体装置及びその製造方法並びに電子機器 |
IL123207A0 (en) * | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
WO2002051217A2 (en) * | 2000-12-21 | 2002-06-27 | Shellcase Ltd. | Packaged integrated circuits and methods of producing thereof |
US6008070A (en) | 1998-05-21 | 1999-12-28 | Micron Technology, Inc. | Wafer level fabrication and assembly of chip scale packages |
JP2000012745A (ja) * | 1998-06-24 | 2000-01-14 | Nec Corp | 半導体パッケージおよびその製造方法 |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6903451B1 (en) | 1998-08-28 | 2005-06-07 | Samsung Electronics Co., Ltd. | Chip scale packages manufactured at wafer level |
KR100269540B1 (ko) * | 1998-08-28 | 2000-10-16 | 윤종용 | 웨이퍼 상태에서의 칩 스케일 패키지 제조 방법 |
US6339251B2 (en) | 1998-11-10 | 2002-01-15 | Samsung Electronics Co., Ltd | Wafer grooves for reducing semiconductor wafer warping |
US7157314B2 (en) | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6227941B1 (en) * | 1998-11-17 | 2001-05-08 | Advanced Micro Devices, Inc. | Support structure with multi-layer support material for use during package removal from a multi-layer integrated circuit device |
FR2788375B1 (fr) | 1999-01-11 | 2003-07-18 | Gemplus Card Int | Procede de protection de puce de circuit integre |
JP3556503B2 (ja) * | 1999-01-20 | 2004-08-18 | 沖電気工業株式会社 | 樹脂封止型半導体装置の製造方法 |
US6182342B1 (en) | 1999-04-02 | 2001-02-06 | Andersen Laboratories, Inc. | Method of encapsulating a saw device |
US6544880B1 (en) * | 1999-06-14 | 2003-04-08 | Micron Technology, Inc. | Method of improving copper interconnects of semiconductor devices for bonding |
US6168965B1 (en) | 1999-08-12 | 2001-01-02 | Tower Semiconductor Ltd. | Method for making backside illuminated image sensor |
JP2001094005A (ja) * | 1999-09-22 | 2001-04-06 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
IL133453A0 (en) * | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US6452265B1 (en) | 2000-01-28 | 2002-09-17 | International Business Machines Corporation | Multi-chip module utilizing a nonconductive material surrounding the chips that has a similar coefficient of thermal expansion |
DE10006738C2 (de) * | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung |
US7205578B2 (en) * | 2000-02-15 | 2007-04-17 | Osram Gmbh | Semiconductor component which emits radiation, and method for producing the same |
SG106050A1 (en) * | 2000-03-13 | 2004-09-30 | Megic Corp | Method of manufacture and identification of semiconductor chip marked for identification with internal marking indicia and protection thereof by non-black layer and device produced thereby |
JP4403631B2 (ja) * | 2000-04-24 | 2010-01-27 | ソニー株式会社 | チップ状電子部品の製造方法、並びにその製造に用いる擬似ウエーハの製造方法 |
JP2001313350A (ja) * | 2000-04-28 | 2001-11-09 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法 |
JP3631956B2 (ja) | 2000-05-12 | 2005-03-23 | 富士通株式会社 | 半導体チップの実装方法 |
DE20111659U1 (de) * | 2000-05-23 | 2001-12-13 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Bauelement für die Optoelektronik |
US6875640B1 (en) * | 2000-06-08 | 2005-04-05 | Micron Technology, Inc. | Stereolithographic methods for forming a protective layer on a semiconductor device substrate and substrates including protective layers so formed |
JP2002043251A (ja) * | 2000-07-25 | 2002-02-08 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
KR100819730B1 (ko) | 2000-08-14 | 2008-04-07 | 샌디스크 쓰리디 엘엘씨 | 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법 |
US20020117753A1 (en) * | 2001-02-23 | 2002-08-29 | Lee Michael G. | Three dimensional packaging |
US6897514B2 (en) | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
US7498196B2 (en) | 2001-03-30 | 2009-03-03 | Megica Corporation | Structure and manufacturing method of chip scale package |
US6707591B2 (en) | 2001-04-10 | 2004-03-16 | Silicon Light Machines | Angled illumination for a single order light modulator based projection system |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
US6841813B2 (en) | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6829092B2 (en) | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6797537B2 (en) * | 2001-10-30 | 2004-09-28 | Irvine Sensors Corporation | Method of making stackable layers containing encapsulated integrated circuit chips with one or more overlaying interconnect layers |
DE10164800B4 (de) | 2001-11-02 | 2005-03-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips |
DE10153609C2 (de) * | 2001-11-02 | 2003-10-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US7169685B2 (en) | 2002-02-25 | 2007-01-30 | Micron Technology, Inc. | Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive |
US7787939B2 (en) | 2002-03-18 | 2010-08-31 | Sterling Lc | Miniaturized imaging device including utility aperture and SSID |
US20060146172A1 (en) * | 2002-03-18 | 2006-07-06 | Jacobsen Stephen C | Miniaturized utility device having integrated optical capabilities |
US7591780B2 (en) * | 2002-03-18 | 2009-09-22 | Sterling Lc | Miniaturized imaging device with integrated circuit connector system |
US8614768B2 (en) | 2002-03-18 | 2013-12-24 | Raytheon Company | Miniaturized imaging device including GRIN lens optically coupled to SSID |
US7152291B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Method for forming plated terminations |
US20040021214A1 (en) * | 2002-04-16 | 2004-02-05 | Avner Badehi | Electro-optic integrated circuits with connectors and methods for the production thereof |
EP1502135A2 (en) * | 2002-04-16 | 2005-02-02 | Xloom Photonics Ltd. | Electro-optical circuitry having integrated connector and methods for the production thereof |
AU2003233604A1 (en) * | 2002-05-20 | 2003-12-12 | Imagerlabs | Forming a multi segment integrated circuit with isolated substrates |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6728023B1 (en) | 2002-05-28 | 2004-04-27 | Silicon Light Machines | Optical device arrays with optimized image resolution |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6829258B1 (en) | 2002-06-26 | 2004-12-07 | Silicon Light Machines, Inc. | Rapidly tunable external cavity laser |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
US7033664B2 (en) | 2002-10-22 | 2006-04-25 | Tessera Technologies Hungary Kft | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US7265045B2 (en) | 2002-10-24 | 2007-09-04 | Megica Corporation | Method for fabricating thermal compliant semiconductor chip wiring structure for chip scale packaging |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
DE10342980B3 (de) * | 2003-09-17 | 2005-01-05 | Disco Hi-Tec Europe Gmbh | Verfahren zur Bildung von Chip-Stapeln |
US20050064683A1 (en) * | 2003-09-19 | 2005-03-24 | Farnworth Warren M. | Method and apparatus for supporting wafers for die singulation and subsequent handling |
US7713841B2 (en) * | 2003-09-19 | 2010-05-11 | Micron Technology, Inc. | Methods for thinning semiconductor substrates that employ support structures formed on the substrates |
US20050064679A1 (en) * | 2003-09-19 | 2005-03-24 | Farnworth Warren M. | Consolidatable composite materials, articles of manufacture formed therefrom, and fabrication methods |
US7538358B2 (en) | 2003-10-15 | 2009-05-26 | Xloom Communications, Ltd. | Electro-optical circuitry having integrated connector and methods for the production thereof |
TWI233170B (en) * | 2004-02-05 | 2005-05-21 | United Microelectronics Corp | Ultra-thin wafer level stack packaging method and structure using thereof |
DE102004009742B4 (de) * | 2004-02-25 | 2010-03-04 | Infineon Technologies Ag | Verfahren zum Herstellen rückseitenbeschichteter Halbleiterchips |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7547978B2 (en) * | 2004-06-14 | 2009-06-16 | Micron Technology, Inc. | Underfill and encapsulation of semiconductor assemblies with materials having differing properties |
US7235431B2 (en) | 2004-09-02 | 2007-06-26 | Micron Technology, Inc. | Methods for packaging a plurality of semiconductor dice using a flowable dielectric material |
US20060138626A1 (en) * | 2004-12-29 | 2006-06-29 | Tessera, Inc. | Microelectronic packages using a ceramic substrate having a window and a conductive surface region |
US7566853B2 (en) * | 2005-08-12 | 2009-07-28 | Tessera, Inc. | Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture |
TWI303870B (en) * | 2005-12-30 | 2008-12-01 | Advanced Semiconductor Eng | Structure and mtehod for packaging a chip |
FR2905198B1 (fr) * | 2006-08-22 | 2008-10-17 | 3D Plus Sa Sa | Procede de fabrication collective de modules electroniques 3d |
US7935568B2 (en) * | 2006-10-31 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
US7807508B2 (en) * | 2006-10-31 | 2010-10-05 | Tessera Technologies Hungary Kft. | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
TW200842998A (en) * | 2007-04-18 | 2008-11-01 | Siliconware Precision Industries Co Ltd | Semiconductor device and manufacturing method thereof |
TWI331371B (en) * | 2007-04-19 | 2010-10-01 | Siliconware Precision Industries Co Ltd | Semiconductor device and manufacturing method thereof |
US7835074B2 (en) | 2007-06-05 | 2010-11-16 | Sterling Lc | Mini-scope for multi-directional imaging |
US7923298B2 (en) * | 2007-09-07 | 2011-04-12 | Micron Technology, Inc. | Imager die package and methods of packaging an imager die on a temporary carrier |
US20090093137A1 (en) * | 2007-10-08 | 2009-04-09 | Xloom Communications, (Israel) Ltd. | Optical communications module |
US7969659B2 (en) | 2008-01-11 | 2011-06-28 | Sterling Lc | Grin lens microscope system |
US7952834B2 (en) * | 2008-02-22 | 2011-05-31 | Seagate Technology Llc | Flex circuit assembly with thermal energy dissipation |
JP5596027B2 (ja) | 2008-06-18 | 2014-09-24 | レイセオン カンパニー | カテーテル |
WO2010014792A2 (en) | 2008-07-30 | 2010-02-04 | Sterling Lc | Method and device for incremental wavelength variation to analyze tissue |
US9060704B2 (en) | 2008-11-04 | 2015-06-23 | Sarcos Lc | Method and device for wavelength shifted imaging |
US9082438B2 (en) | 2008-12-02 | 2015-07-14 | Panasonic Corporation | Three-dimensional structure for wiring formation |
EP2202789A1 (en) * | 2008-12-24 | 2010-06-30 | Nxp B.V. | Stack of molded integrated circuit dies with side surface contact tracks |
EP2207200A1 (en) * | 2008-12-24 | 2010-07-14 | Nxp B.V. | Stack of molded integrated circuit dies with side surface contact tracks |
CN102282661A (zh) * | 2009-01-27 | 2011-12-14 | 松下电工株式会社 | 半导体芯片的安装方法、使用该方法获得的半导体装置以及半导体芯片的连接方法与表面设有布线的立体结构物及其制法 |
US9070393B2 (en) | 2009-01-27 | 2015-06-30 | Panasonic Corporation | Three-dimensional structure in which wiring is provided on its surface |
US8569877B2 (en) | 2009-03-12 | 2013-10-29 | Utac Thai Limited | Metallic solderability preservation coating on metal part of semiconductor package to prevent oxide |
US8232140B2 (en) * | 2009-03-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for ultra thin wafer handling and processing |
US9144664B2 (en) | 2009-10-01 | 2015-09-29 | Sarcos Lc | Method and apparatus for manipulating movement of a micro-catheter |
US8717428B2 (en) | 2009-10-01 | 2014-05-06 | Raytheon Company | Light diffusion apparatus |
US9661996B2 (en) | 2009-10-01 | 2017-05-30 | Sarcos Lc | Needle delivered imaging device |
WO2011045836A1 (ja) | 2009-10-14 | 2011-04-21 | 国立大学法人東北大学 | センサ装置およびセンサ装置の製造方法 |
US8828028B2 (en) | 2009-11-03 | 2014-09-09 | Raytheon Company | Suture device and method for closing a planar opening |
DE102010009015A1 (de) * | 2010-02-24 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips |
WO2011110900A1 (en) * | 2010-03-12 | 2011-09-15 | Nxp B.V. | Stack of molded integrated circuit dies with side surface contact tracks |
US8669777B2 (en) | 2010-10-27 | 2014-03-11 | Seagate Technology Llc | Assessing connection joint coverage between a device and a printed circuit board |
JP6022792B2 (ja) | 2012-03-30 | 2016-11-09 | 国立大学法人東北大学 | 集積化デバイス及び集積化デバイスの製造方法 |
US9299640B2 (en) | 2013-07-16 | 2016-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Front-to-back bonding with through-substrate via (TSV) |
US9929050B2 (en) | 2013-07-16 | 2018-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure |
US8860229B1 (en) | 2013-07-16 | 2014-10-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bonding with through substrate via (TSV) |
US9087821B2 (en) | 2013-07-16 | 2015-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bonding with through substrate via (TSV) |
US10242934B1 (en) | 2014-05-07 | 2019-03-26 | Utac Headquarters Pte Ltd. | Semiconductor package with full plating on contact side surfaces and methods thereof |
TWI657510B (zh) * | 2014-10-02 | 2019-04-21 | 日商住友電木股份有限公司 | 半導體裝置之製造方法及半導體裝置 |
KR101712396B1 (ko) | 2014-12-30 | 2017-03-13 | 주식회사 유림기계 | 목재 파쇄기용 파쇄유닛의 칼날 고정장치 |
US10269686B1 (en) | 2015-05-27 | 2019-04-23 | UTAC Headquarters PTE, LTD. | Method of improving adhesion between molding compounds and an apparatus thereof |
CN106469689B (zh) * | 2015-08-21 | 2019-10-11 | 安世有限公司 | 电子元件及其形成方法 |
KR20180090494A (ko) | 2017-02-03 | 2018-08-13 | 삼성전자주식회사 | 기판 구조체 제조 방법 |
CN115769373A (zh) * | 2020-05-19 | 2023-03-07 | 英特尔公司 | 用于集成电路的有机间隔物 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2507956A (en) * | 1947-11-01 | 1950-05-16 | Lithographic Technical Foundat | Process of coating aluminum |
NL83665C (fi) * | 1952-04-03 | |||
US2796370A (en) * | 1955-03-04 | 1957-06-18 | Charles W Ostrander | Composition and method for producing corrosion resistant protective coating on aluminum and aluminum alloys |
DE1591105A1 (de) * | 1967-12-06 | 1970-09-24 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Festkoerperschaltungen |
US3644801A (en) * | 1971-01-21 | 1972-02-22 | Gary S Sheldon | Semiconductor passivating process and product |
SE415902B (sv) * | 1979-02-13 | 1980-11-10 | Gkn Stenman Ab | Cylinderlas |
JPS5784135A (en) * | 1980-11-14 | 1982-05-26 | Toshiba Corp | Manufacture of semiconductor element |
DE3381187D1 (de) * | 1983-11-07 | 1990-03-08 | Irvine Sensors Corp | Detektoranordnungsstruktur und -herstellung. |
GB8519373D0 (en) * | 1985-08-01 | 1985-09-04 | Unilever Plc | Encapsulation of fet transducers |
IT1186165B (it) * | 1985-12-20 | 1987-11-18 | Sgs Microelettronica Spa | Dispositivo a semiconduttore di tipo eprom cancellabile con raggi ultravioletti e suo processo di fabbricazione |
US4900695A (en) * | 1986-12-17 | 1990-02-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for producing the same |
US4862249A (en) * | 1987-04-17 | 1989-08-29 | Xoc Devices, Inc. | Packaging system for stacking integrated circuits |
US4794092A (en) * | 1987-11-18 | 1988-12-27 | Grumman Aerospace Corporation | Single wafer moated process |
US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
US4962249A (en) * | 1988-06-23 | 1990-10-09 | Mobil Oil Corporation | High VI lubricants from lower alkene oligomers |
JPH0217644A (ja) * | 1988-07-06 | 1990-01-22 | Hitachi Ltd | 集積回路 |
US4933898A (en) * | 1989-01-12 | 1990-06-12 | General Instrument Corporation | Secure integrated circuit chip with conductive shield |
JP2829015B2 (ja) * | 1989-01-19 | 1998-11-25 | 株式会社東芝 | 半導体素子の加工方法 |
US4984358A (en) * | 1989-03-10 | 1991-01-15 | Microelectronics And Computer Technology Corporation | Method of assembling stacks of integrated circuit dies |
FR2645681B1 (fr) * | 1989-04-07 | 1994-04-08 | Thomson Csf | Dispositif d'interconnexion verticale de pastilles de circuits integres et son procede de fabrication |
US5104820A (en) * | 1989-07-07 | 1992-04-14 | Irvine Sensors Corporation | Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting |
US5147815A (en) * | 1990-05-14 | 1992-09-15 | Motorola, Inc. | Method for fabricating a multichip semiconductor device having two interdigitated leadframes |
JPH07120646B2 (ja) * | 1990-05-16 | 1995-12-20 | 株式会社東芝 | メサ型半導体ペレットの製造方法 |
US5126286A (en) * | 1990-10-05 | 1992-06-30 | Micron Technology, Inc. | Method of manufacturing edge connected semiconductor die |
FR2670323B1 (fr) * | 1990-12-11 | 1997-12-12 | Thomson Csf | Procede et dispositif d'interconnexion de circuits integres en trois dimensions. |
US5292686A (en) * | 1991-08-21 | 1994-03-08 | Triquint Semiconductor, Inc. | Method of forming substrate vias in a GaAs wafer |
US5266833A (en) * | 1992-03-30 | 1993-11-30 | Capps David F | Integrated circuit bus structure |
HUT73312A (en) * | 1992-09-14 | 1996-07-29 | Badehi | Method and apparatus for producing integrated circuit devices, and integrated circuit device |
US5376235A (en) * | 1993-07-15 | 1994-12-27 | Micron Semiconductor, Inc. | Method to eliminate corrosion in conductive elements |
-
1992
- 1992-09-14 HU HU9500783A patent/HUT73312A/hu unknown
- 1992-09-14 EP EP92919323A patent/EP0660967B1/en not_active Expired - Lifetime
- 1992-09-14 AT AT92919323T patent/ATE200593T1/de active
- 1992-09-14 WO PCT/EP1992/002134 patent/WO1994007267A1/en active IP Right Grant
- 1992-09-14 CA CA002144323A patent/CA2144323C/en not_active Expired - Fee Related
- 1992-09-14 MX MX9305603A patent/MX9305603A/es not_active IP Right Cessation
- 1992-09-14 PL PL92308140A patent/PL169823B1/pl unknown
- 1992-09-14 DK DK92919323T patent/DK0660967T3/da active
- 1992-09-14 JP JP50772194A patent/JP3621093B2/ja not_active Expired - Lifetime
- 1992-09-14 DE DE69231785T patent/DE69231785T2/de not_active Expired - Fee Related
- 1992-09-14 KR KR1019950700986A patent/KR100310220B1/ko not_active IP Right Cessation
- 1992-09-14 US US07/962,222 patent/US5455455A/en not_active Expired - Lifetime
- 1992-09-14 AU AU25541/92A patent/AU2554192A/en not_active Abandoned
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1993
- 1993-08-16 IL IL10671093A patent/IL106710A/xx not_active IP Right Cessation
- 1993-08-18 ZA ZA936039A patent/ZA936039B/xx unknown
- 1993-08-20 EC EC1993000975A patent/ECSP930975A/es unknown
- 1993-09-02 PT PT101354A patent/PT101354A/pt not_active Application Discontinuation
- 1993-09-09 GT GT199300053A patent/GT199300053A/es unknown
- 1993-09-13 MA MA23286A patent/MA25277A1/fr unknown
- 1993-09-14 MY MYPI93001866A patent/MY129454A/en unknown
-
1994
- 1994-07-13 US US08/274,251 patent/US5547906A/en not_active Expired - Lifetime
-
1995
- 1995-03-10 FI FI951142A patent/FI951142A/fi not_active Application Discontinuation
- 1995-03-13 NO NO950960A patent/NO950960L/no unknown
- 1995-04-10 BG BG99554A patent/BG99554A/xx unknown
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HUT73312A (en) | 1996-07-29 |
MX9305603A (es) | 1994-05-31 |
FI951142A0 (fi) | 1995-03-10 |
HU9500783D0 (en) | 1995-05-29 |
NO950960D0 (no) | 1995-03-13 |
PL169823B1 (pl) | 1996-09-30 |
MA25277A1 (fr) | 2001-12-31 |
EP0660967B1 (en) | 2001-04-11 |
NO950960L (no) | 1995-05-10 |
ATE200593T1 (de) | 2001-04-15 |
FI951142A (fi) | 1995-05-10 |
JPH08503813A (ja) | 1996-04-23 |
US5455455A (en) | 1995-10-03 |
US5547906A (en) | 1996-08-20 |
PL308140A1 (en) | 1995-07-24 |
IL106710A0 (en) | 1993-12-08 |
IL106710A (en) | 1997-01-10 |
MY129454A (en) | 2007-04-30 |
PT101354A (pt) | 1994-07-29 |
CA2144323A1 (en) | 1994-03-31 |
JP3621093B2 (ja) | 2005-02-16 |
GT199300053A (es) | 1995-03-03 |
DE69231785D1 (de) | 2001-05-17 |
KR100310220B1 (ko) | 2001-12-17 |
WO1994007267A1 (en) | 1994-03-31 |
AU2554192A (en) | 1994-04-12 |
EP0660967A1 (en) | 1995-07-05 |
DE69231785T2 (de) | 2001-11-15 |
ECSP930975A (es) | 1994-04-20 |
CA2144323C (en) | 2005-06-28 |
BG99554A (en) | 1996-03-29 |
DK0660967T3 (da) | 2001-08-13 |
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