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Priority to TW086117761ApriorityCriticalpatent/TW353798B/en
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Publication of TW353798BpublicationCriticalpatent/TW353798B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A method of producing a landed layer of via, which comprises the following steps: providing a semiconductor substrate; forming a landed layer on the semiconductor substrate; forming a wiring line on the landed layer; forming an inter-metallic dielectric layer on the wiring line, the landed layer and the semiconductor substrate; and removing a portion of the inter-metallic dielectric layer thereby forming at least a via and exposing the wiring line.
TW086117761A1997-11-261997-11-26Method of producing landed layer of via
TW353798B
(en)