WO2017033833A9 - 感光性樹脂組成物、ポリイミドの製造方法および半導体装置 - Google Patents
感光性樹脂組成物、ポリイミドの製造方法および半導体装置 Download PDFInfo
- Publication number
- WO2017033833A9 WO2017033833A9 PCT/JP2016/074143 JP2016074143W WO2017033833A9 WO 2017033833 A9 WO2017033833 A9 WO 2017033833A9 JP 2016074143 W JP2016074143 W JP 2016074143W WO 2017033833 A9 WO2017033833 A9 WO 2017033833A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- photosensitive resin
- polyimide
- layer
- semiconductor device
- Prior art date
Links
- 239000004642 Polyimide Substances 0.000 title abstract 6
- 229920001721 polyimide Polymers 0.000 title abstract 6
- 239000011342 resin composition Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 125000000962 organic group Chemical group 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G03F7/004—Photosensitive materials
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- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G—PHYSICS
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- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/024—Material of the insulating layers therebetween
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020207002014A KR102090451B1 (ko) | 2015-08-21 | 2016-08-18 | 감광성 수지 조성물, 폴리이미드의 제조 방법 및 반도체 장치 |
JP2017536387A JP6297757B2 (ja) | 2015-08-21 | 2016-08-18 | 感光性樹脂組成物、ポリイミドの製造方法および半導体装置 |
US15/741,603 US10719016B2 (en) | 2015-08-21 | 2016-08-18 | Photosensitive resin composition, polyimide production method, and semiconductor device |
KR1020177031899A KR20170133486A (ko) | 2015-08-21 | 2016-08-18 | 감광성 수지 조성물, 폴리이미드의 제조 방법 및 반도체 장치 |
KR1020207002013A KR102229738B1 (ko) | 2015-08-21 | 2016-08-18 | 감광성 수지 조성물, 폴리이미드의 제조 방법 및 반도체 장치 |
CN201680031940.4A CN107615166B (zh) | 2015-08-21 | 2016-08-18 | 感光性树脂组合物、聚酰亚胺的制造方法及半导体装置 |
US16/893,925 US20200301273A1 (en) | 2015-08-21 | 2020-06-05 | Photosensitive resin composition, polyimide production method, and semiconductor device |
US17/744,873 US11809079B2 (en) | 2015-08-21 | 2022-05-16 | Photosensitive resin composition, polyimide production method, and semiconductor device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-163555 | 2015-08-21 | ||
JP2015163555 | 2015-08-21 | ||
JP2016-083042 | 2016-04-18 | ||
JP2016083042 | 2016-04-18 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/741,603 A-371-Of-International US10719016B2 (en) | 2015-08-21 | 2016-08-18 | Photosensitive resin composition, polyimide production method, and semiconductor device |
US16/893,925 Division US20200301273A1 (en) | 2015-08-21 | 2020-06-05 | Photosensitive resin composition, polyimide production method, and semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2017033833A1 WO2017033833A1 (ja) | 2017-03-02 |
WO2017033833A9 true WO2017033833A9 (ja) | 2018-05-24 |
Family
ID=58100314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/074143 WO2017033833A1 (ja) | 2015-08-21 | 2016-08-18 | 感光性樹脂組成物、ポリイミドの製造方法および半導体装置 |
Country Status (6)
Country | Link |
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US (3) | US10719016B2 (ja) |
JP (3) | JP6297757B2 (ja) |
KR (3) | KR102090451B1 (ja) |
CN (2) | CN112799281A (ja) |
TW (3) | TWI656147B (ja) |
WO (1) | WO2017033833A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10719016B2 (en) * | 2015-08-21 | 2020-07-21 | Asahi Kasei Kabushiki Kaisha | Photosensitive resin composition, polyimide production method, and semiconductor device |
CN115185157A (zh) * | 2016-03-31 | 2022-10-14 | 旭化成株式会社 | 感光性树脂组合物、固化浮雕图案的制造方法和半导体装置 |
CN110325912B (zh) * | 2017-02-23 | 2023-07-14 | 艾曲迪微系统股份有限公司 | 感光性树脂组合物、图案的制造方法、固化物、层间绝缘膜、覆盖涂层、保护膜和电子部件 |
SG11201908559XA (en) * | 2017-03-21 | 2019-10-30 | Toray Industries | Photosensitive resin composition, photosensitive resin composition film, insulating film and electronic component |
JP6824389B2 (ja) | 2017-03-29 | 2021-02-03 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法および半導体デバイス |
JP7088636B2 (ja) * | 2017-07-11 | 2022-06-21 | 旭化成株式会社 | 半導体装置、及びその製造方法 |
JP7088639B2 (ja) * | 2017-08-01 | 2022-06-21 | 旭化成株式会社 | 半導体装置、及びその製造方法 |
KR20190006926A (ko) * | 2017-07-11 | 2019-01-21 | 아사히 가세이 가부시키가이샤 | 반도체 장치, 및 그 제조 방법 |
JP7088640B2 (ja) * | 2017-08-01 | 2022-06-21 | 旭化成株式会社 | 半導体装置、及びその製造方法 |
JP2019029556A (ja) * | 2017-08-01 | 2019-02-21 | 旭化成株式会社 | 半導体装置、及びその製造方法 |
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KR102229738B1 (ko) | 2021-03-18 |
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JP6367456B2 (ja) | 2018-08-01 |
TW201718710A (zh) | 2017-06-01 |
CN107615166B (zh) | 2020-12-25 |
JP2018082183A (ja) | 2018-05-24 |
JP2018197863A (ja) | 2018-12-13 |
TW201809079A (zh) | 2018-03-16 |
KR20200010604A (ko) | 2020-01-30 |
JP6419383B1 (ja) | 2018-11-07 |
JP6297757B2 (ja) | 2018-03-20 |
KR102090451B1 (ko) | 2020-03-18 |
TWI615421B (zh) | 2018-02-21 |
CN107615166A (zh) | 2018-01-19 |
US20190072850A1 (en) | 2019-03-07 |
TWI656147B (zh) | 2019-04-11 |
CN112799281A (zh) | 2021-05-14 |
TWI653258B (zh) | 2019-03-11 |
US20200301273A1 (en) | 2020-09-24 |
KR20200010603A (ko) | 2020-01-30 |
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