WO2016063744A1 - パワーモジュール - Google Patents

パワーモジュール Download PDF

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Publication number
WO2016063744A1
WO2016063744A1 PCT/JP2015/078719 JP2015078719W WO2016063744A1 WO 2016063744 A1 WO2016063744 A1 WO 2016063744A1 JP 2015078719 W JP2015078719 W JP 2015078719W WO 2016063744 A1 WO2016063744 A1 WO 2016063744A1
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WIPO (PCT)
Prior art keywords
copper
aluminum
electrode
wire
semiconductor element
Prior art date
Application number
PCT/JP2015/078719
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English (en)
French (fr)
Inventor
藤野 純司
祥久 内田
翔平 小川
創一 坂元
辰則 柳本
Original Assignee
三菱電機株式会社
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to CN201580043705.4A priority Critical patent/CN106575628B/zh
Priority to US15/324,085 priority patent/US9818716B2/en
Priority to DE112015004770.0T priority patent/DE112015004770B4/de
Priority to JP2016555175A priority patent/JP6320556B2/ja
Publication of WO2016063744A1 publication Critical patent/WO2016063744A1/ja

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    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Definitions

  • the present invention relates to a power module used in every scene from power generation or transmission to efficient use or regeneration of energy.
  • Power modules are spreading in every product from industrial equipment to home appliances or information terminals, and modules mounted on home appliances are required to have high productivity and high reliability that can be used for various types as well as being smaller and lighter.
  • it is also required to have a package form that can be applied to SiC semiconductors that are likely to become mainstream in the future because of high operating temperature and excellent efficiency.
  • the power module is characterized by the fact that it is a semiconductor that handles high voltages of 100V or higher and large currents of 100A or more.
  • To form a large current circuit of 100A or more it is a thick aluminum with a diameter of 0.5mm to the electrode on the surface of the power semiconductor element.
  • an electric circuit is formed by wiring a plurality of wire bonds such as the above.
  • the copper wire is harder and less likely to be deformed than the aluminum wire, there is a concern about damage such as shear fracture of the surface electrode of the power semiconductor element during wire bonding. Even if the device damage problem can be overcome, the thermal stress at the interface of the junction increases in accordance with the operating temperature when the operating temperature is as high as 250 ° C or higher, as in SiC power semiconductor devices. Therefore, it is difficult to ensure reliability such as temperature cycle resistance.
  • Patent Document 1 proposes a method of reducing damage to a power semiconductor element by placing an aluminum foil on the surface of the power semiconductor element and performing copper wire bonding from the aluminum foil. Although this method may be able to solve the problem of damage, when aluminum itself is exposed to a high temperature of 175 ° C or higher, grain boundaries become apparent due to the coarsening of crystals due to recrystallization, leading to cracks and breaking. There are concerns.
  • a buffer plate A having an expansion coefficient ( ⁇ 1) close to that of a power semiconductor element (Si) and a buffer plate B having an expansion coefficient ( ⁇ 2) close to that of a wire are disposed between the power semiconductor element and the wire.
  • damage such as distortion due to a difference in expansion coefficient at the time of wire bonding is reduced, and at the same time, thermal stress generated in the joint is reduced to ensure reliability during high temperature operation.
  • the buffer plate since the buffer plate is laminated by soldering, there is a concern that the heat resistance of the soldered portion is insufficient in the long term, such as temperature cycle resistance.
  • the power module according to the present invention is A substrate, A power semiconductor element disposed on the substrate; An electrode formed on the surface of the power semiconductor element; A laminated metal plate joined to the electrode; A power module comprising a wire connecting the laminated metal plate and the substrate,
  • the laminated metal plate is configured such that a member facing the electrode has the same main material as the electrode, and a member facing the wire has the same material as the wire.
  • An intermetallic compound layer is formed between the laminated metal plates with a thickness of 5 ⁇ m or more and 100 ⁇ m or less, It is characterized by this.
  • the clad material in which aluminum and copper are overlapped and pressed together acts as a buffer plate.
  • Aluminum with a low recrystallization temperature and low heat resistance compared to copper is not exposed on the surface (surface in contact with the sealing resin), so even if the temperature is higher than the operating temperature of the conventional Si power semiconductor element, the crystal is coarse The influence of embrittlement due to crystallization becomes difficult to occur.
  • the aluminum side of the clad material is bonded to the aluminum electrode of the power semiconductor element, and copper wire bonding is performed on the copper side of the clad material, thereby avoiding dissimilar metal bonding, thereby causing brittleness due to the formation of intermetallic compounds during semiconductor operation after assembly. It is possible to suppress the occurrence of cracks due to thermal stress. It has been separately confirmed that there is no problem with embrittlement due to the formation of intermetallic compounds at the joint of the clad material itself (see Non-Patent Document 1).
  • FIG. 4 is a plan view of FIG. 3. It is the A section enlarged view of FIG. It is a model figure in case the growth of an intermetallic compound is non-uniform
  • FIG. 4 shows the cross section of the power module by Embodiment 2 of this invention. It is a conceptual diagram of the cross section which shows the cutting state of the aluminum copper clad ribbon with the cutter of the power module by Embodiment 2 of this invention. It is a conceptual diagram of the cross section of the power module which shows an example of the state which electrically connected the main electrode of the power semiconductor element by Embodiment 2 of this invention, and the conductor layer of a board
  • FIG. 1 to 5 and 7 are conceptual diagrams of a power module according to the first embodiment.
  • the power semiconductor element 1 includes a conductor layer 22 (made of copper, thickness 0.4 mm; ceramic substrate 2 of FIG. 1) of a ceramic substrate 2 (alumina base material 21 having a thickness of 0.635 mm). It is joined with solder 5 on the upper conductor layer (not the lower conductor layer 23).
  • An aluminum copper clad ribbon 3 (a ribbon in which a copper foil 31 (thickness 0.05 mm) is superposed on an aluminum foil 32 (thickness 0.2 mm), width 10 mm), which is a laminated metal plate, is used.
  • a junction 33 is formed. That is, a clad material in which aluminum and copper are overlapped and pressure-welded is used, and the aluminum side of the clad material is joined by ultrasonic bonding or the like to the electrode surface of the power semiconductor element, and a wire bond is formed on the copper side of the clad material. By doing so, an electric circuit is formed.
  • wire bonding is performed using a copper wire ( ⁇ 0.4 mm), and finally the main electrode of the power semiconductor element and the conductor layer of the ceramic substrate are electrically connected.
  • FIG. 4 is a top view of FIG. 3, but is transferred by an error at the tip of the tool (longitudinal and lateral recesses for increasing friction) by joining nine places of the aluminum copper clad ribbon with an ultrasonic joining tool.
  • Nine bonding marks 41 are formed, and by performing wire bonding of the copper wire using a flat portion between them, the influence on the bonding quality due to the unevenness of the bonding marks can be suppressed.
  • FIG. 5 is an enlarged view of part A of the aluminum-copper clad ribbon of FIG. 3, which is preliminarily heated for 3 hours under an inert atmosphere at a temperature of 400 ° C., and between the aluminum and copper metal between the aluminum and copper.
  • a compound layer 34 is formed. Although it depends on the operating temperature or quality assurance period of the power module, according to Non-Patent Document 1 (see, for example, FIG. 10), if an intermetallic compound is generated by heating at 400 ° C. for 3 hours, 3000 hours at 200 ° C. Since the intermetallic compound thickness is the same as that held, and the growth of the compound is proportional to the square root of the time even if it is held at 200 ° C.
  • the upper limit is 600 ° C.
  • the intermetallic compound between aluminum and copper becomes 5 ⁇ m thick, but this thickness corresponds to a thermal history of 0.32 years at 200 ° C., and the environment where the power module is placed It can be said that it is sufficient considering the product life.
  • the aluminum wire of the maximum diameter for wire bonding normally used is 0.5 mm, and the thickness of the aluminum copper clad ribbon necessary to replace it in terms of current capacity is 0.2 mm.
  • a temperature distribution occurs at the time of operation of the semiconductor at the junction 33 and the non-junction between the aluminum copper clad ribbon and the main electrode.
  • a difference occurs in the growth rate of the intermetallic compound between copper and aluminum, and the intermetallic compound grows in a non-uniform thickness direction (non-uniform in the thickness direction in FIG. 6).
  • See grown intermetallic compound 35 which may affect the copper wire bond joints on the surface. That is, there is a concern that the copper wire 6 may be peeled off at a portion B surrounded by a broken line in FIG.
  • the aluminum and copper clad ribbons having a thickness of 0.25 mm shown above were used, but other metals (magnesium, tin, indium) having the same flexibility as aluminum and copper may be combined. The effect of suppressing wire bond damage is obtained.
  • the thickness if the aluminum is 0.05 mm or more, it can be cut without damaging the semiconductor electrode such as a half cut of the cutter (the thickness of the thinnest part of the ribbon to be used is 0.05 mm. If the thickness is about 1 mm, good ultrasonic bonding and cutting are possible.
  • a normal copper wire bond can be cut without propagating the deformation to the underlying aluminum if the thickness is 0.05 mm or more. Similarly, if it is 0.2 mm or less, ultrasonic bonding and cutting on a semiconductor element are possible. Regarding the ratio of the thickness of aluminum and copper, it is considered that ultrasonic bonding is easier when copper is thinner than 1: 1. However, it is not necessary to limit it.
  • an aluminum copper clad ribbon is used, but the same effect can be obtained even if a piece of clad material whose sides are cut in advance by 1 mm smaller than the surface electrode of the semiconductor element is used.
  • an alumina ceramic substrate is used here, a similar effect can be obtained with a ceramic substrate such as aluminum nitride or silicon nitride.
  • copper was used as the conductor layer, the same effect can be obtained even when an aluminum conductor layer ceramic substrate is used. The same effect can be obtained by die bonding or wire bonding of the power semiconductor element to the lead frame.
  • a diode is used as a power semiconductor element, but it can also be incorporated in an IGBT (Insulated Gate Bipolar Transistor) with the same configuration.
  • IGBT Insulated Gate Bipolar Transistor
  • the electrode plate made of copper is used, but the same effect can be obtained by using a plate made of aluminum or CIC (copper invar clad material).
  • the copper was completely cut by a cutter and the aluminum was separated, but even if it was cut halfway through the copper plate thickness, it could be separated in a later process, so the ribbon was cut in the same way. It is possible to reduce damage to the power semiconductor element. Further, by forming the V-groove on the ribbon, it is possible to easily cut the ribbon, and the ribbon cutting on the chip can be performed without damaging the semiconductor element.
  • an ultrasonic bonding tool (not shown) having a tip shape (2 mm square, length 20 mm) smaller than the surface electrode (11 mm square, thickness 0.01 mm) of the power semiconductor element is separately applied to a plurality of locations. Although several joints were made, the same effect can be obtained even if the entire surface is joined at once by using an ultrasonic joining tool in which the candy is partially formed on the tool surface (formation of 9 spots in the enclave) Is obtained. This method is more advantageous in terms of man-hour reduction.
  • the circuit formation was performed using the copper wire bond here, the same effect can be obtained by using the copper ribbon 61 (width 2 mm, thickness 0.2 mm) as shown in FIG.
  • the cross-sectional area of the copper ribbon is larger than that of the copper wire, the current capacity is increased, the Joule heat generation is reduced, and the reliability can be improved.
  • the aluminum copper clad ribbon is ultrasonically bonded to the power semiconductor element, but the same effect can be obtained by heat-pressure bonding, vacuum bonding, or bonding with a conductive adhesive. It is done.
  • the first member in contact with the surface of the semiconductor element has substantially the same composition as the surface electrode of the semiconductor element, and the second member in contact with the copper wire is substantially the same as the copper wire. Since they have the same composition, it is possible to suppress the formation of a brittle intermetallic compound layer associated with metal diffusion during the bonding process or operation at a temperature higher than the semiconductor operating temperature.
  • the first member with low heat resistance should not be exposed to the surface in the vicinity of the wire bond interface (the surface in contact with the sealing resin), and the occurrence of a crack starting point due to embrittlement due to crystal coarsening should be suppressed. Can do.
  • FIG. 8 to 11 are conceptual diagrams of a power module according to the second embodiment. As shown in FIG. 8, the power semiconductor element 1 is joined with the solder 5 on the conductor layer 22 (copper thickness 0.4 mm) of the ceramic substrate 2 (alumina base material 21 having a thickness of 0.657 mm). .
  • An aluminum copper clad ribbon 3 (a ribbon having a width of 10 mm and a striped copper foil 31 having a width of 2 mm and a slit of 3 mm superimposed on an aluminum foil 32 (thickness 0.2 mm and width 2 mm)) is used as a power semiconductor element ( Positioned on a main electrode (aluminum, 11 mm ⁇ 11 mm ⁇ 0.01 mm) 11 of a Si diode 12 mm ⁇ 12 mm ⁇ 0.3 mm) and ultrasonically applied by an ultrasonic bonding tool 4 (tip 2 mm ⁇ 2 mm ⁇ 20 mm) Thus, the joint portion 33 is formed in a portion having no copper pattern.
  • FIG. 10 wire bonding is performed using a copper wire ( ⁇ 0.4 mm) to electrically connect the main electrode of the power semiconductor element and the conductor layer of the ceramic substrate.
  • FIG. 11 is a top view of FIG. 10, but is transferred by an error at the tip of the tool (longitudinal and lateral recesses for increasing friction) by joining the aluminum portion 9 of the clad ribbon with an ultrasonic joining tool.
  • the ultrasonic bonding conditions such as ribbon bond load or bonding time are moderated (relatively small load).
  • the condition for short-time bonding can reduce the damage to the power semiconductor element, and can suppress the influence on the bonding quality such as the increase or decrease of the bonding area due to the unevenness of the bonding marks.
  • the aluminum copper clad ribbon was previously heated in an inert atmosphere at a temperature of 400 ° C. for 3 hours to form an intermetallic compound layer 34 between aluminum and copper. Although it depends on the operating temperature of the power module or the quality assurance period, the thickness of the intermetallic compound is the same as that held for 3000 hours at 200 ° C. Since it is proportional (see Non-Patent Document 1), it becomes extremely gentle.
  • a clad ribbon made of aluminum and copper having a predetermined thickness of 0.25 mm was used.
  • a wire The effect of suppressing bond damage is obtained.
  • the thickness of aluminum if it is 0.05 mm or more, it is possible to perform cutting without damaging the semiconductor electrode, such as half-cut cutting of a cutter. If the thickness is about 1 mm, generally good ultrasonic bonding is possible. And can be cut.
  • an aluminum copper clad ribbon is used here, the same effect can be obtained by using a piece of clad material that has been cut in advance to a predetermined size, that is, each side is 1 mm smaller than the surface electrode of the semiconductor element. can get.
  • an alumina ceramic substrate is used here, a similar effect can be obtained with a ceramic substrate such as aluminum nitride or silicon nitride.
  • copper was used as the conductor layer, the same effect can be obtained by using a ceramic substrate with an aluminum conductor layer.
  • a diode is used as the power semiconductor element, but it can also be incorporated into a transistor element such as an IGBT (Insulated Gate Bipolar Transistor) with the same configuration.
  • IGBT Insulated Gate Bipolar Transistor
  • an ultrasonic bonding tool having a tip shape (2 mm square, length 20 mm) smaller than the surface electrode (11 mm square, thickness 0.01 mm) of the power semiconductor element is applied to a plurality of locations, and the bonded portion is formed.
  • the same effect can be obtained even if the entire surface is bonded at once by using an ultrasonic bonding tool in which the surface of the tool is partially formed.
  • the copper pattern is striped here, the same effect can be obtained by using a polka dot pattern or a checkered flag pattern.
  • the copper pattern is produced by removing unnecessary portions from the state of the aluminum copper clad ribbon by etching or the like, but the same effect can be obtained by rolling with copper that has been patterned in advance and making it clad. can get. In this case, there is no surface irregularity (a copper pattern is buried in aluminum), but there is no particular problem because it does not affect the bondability. It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

 アルミと銅を重ね合わせて圧接したクラッド材について、パワー半導体素子の電極表面にクラッド材のアルミ側を超音波接合などによって接合しておき、クラッド材の銅側にワイヤボンドを行うことで電気回路を形成する。さらにクラッド材をあらかじめパワー半導体素子の動作温度よりも高温で熱処理しておくことで、接合プロセス後に膜厚が成長しないようにアルミ及び銅の各々との界面に金属間化合物を十分に形成しておく。

Description

パワーモジュール
 この発明は、発電あるいは送電から効率的なエネルギーの利用あるいは再生まであらゆる場面で利用されるパワーモジュールに関するものである。
 産業機器から家電あるいは情報端末まであらゆる製品にパワーモジュールが普及しつつあり、家電に搭載されるモジュールについては、小型軽量化とともに多品種に対応できる高い生産性と高い信頼性が求められる。
また、動作温度が高く、効率に優れている点で、今後の主流となる可能性の高いSiC半導体に適用できるパッケージ形態であることも同時に求められている。
特開平10-261664号公報 特開2012-28674号公報
謝、他2名、"アルミニウム/銅クラッド材接合界面における金属間化合物の形成"、日本金属学会誌、公益社団法人日本金属学会、2011年3月、第75巻、第3号、pp.166-172
 パワーモジュールは、100V以上の高電圧かつ100A以上の大電流を扱う半導体という特徴があり、100A以上の大電流回路を形成するためにパワー半導体素子表面の電極に対してφ0.5mmにおよぶ太いアルミなどのワイヤボンドを複数本配線することによって電気回路を形成するのが一般的であった。近年の地球温暖化対策、省資源あるいはエネルギーなどの環境問題から、パワーモジュールがさまざまな製品に適用されていく中で、100A以上の大電流に対応しつつ従来より小型化を実現するために、アルミワイヤに比較すると耐熱性が高く、電流容量の大きな銅製のワイヤを用いたワイヤボンドの必要性が高まりつつある。しかし銅ワイヤはアルミワイヤに比較すると、硬くて変形しにくいため、ワイヤボンディング時にパワー半導体素子の表面電極のせん断破壊等のダメージが懸念される。また、素子のダメージの問題を克服できた場合でも、SiC製パワー半導体素子のように動作温度が250℃以上などと高くなる場合には、接合部界面での熱応力が動作温度に従って大きくなることで耐温度サイクル性などの信頼性の確保が困難になるという問題があった。
 特許文献1においては、アルミ箔をパワー半導体素子表面に置き、その上から銅ワイヤボンドを行うことでパワー半導体素子へのダメージを軽減しようとする方法が提案されている。この方法でダメージの問題は解決できる可能性があるが、アルミ自体が175℃以上の高温にさらされると再結晶による結晶の粗大化によって粒界が顕在化し、クラックの起点となって破断に至る懸念がある。
 特許文献2においては、パワー半導体素子(Si)に近い膨張係数(α1)の緩衝板Aと、ワイヤに近い膨張係数(α2)の緩衝板Bを、パワー半導体素子とワイヤの間に配置することで、ワイヤボンド時の膨張係数の違いによる歪発生などのダメージを軽減すると同時に、接合部に生じる熱応力を低減して高温動作時に信頼性を確保する方法が提案されている。この方法では緩衝板をはんだ付けで積層するため、耐温度サイクル性など、長期的には、はんだ付け部の耐熱性が不足する懸念がある。
 この発明に係るパワーモジュールは、
基板と、
この基板に配置されたパワー半導体素子と、
このパワー半導体素子の表面に形成された電極と、
この電極に接合された積層金属板と、
この積層金属板と前記基板とを接続するワイヤと、を備えたパワーモジュールであって、
前記積層金属板は、前記電極と対向する部材が前記電極と主たる材質が同じであり、前記ワイヤと対向する部材が前記ワイヤと主たる材質が同じである構成にされるとともに、
前記積層金属板の間に金属間化合物層が5μm以上、100μm以下の厚さで形成されている、
ことを特徴とするものである。
 この発明によれば、アルミと銅を重ね合わせて圧接したクラッド材が緩衝板として作用することで、銅ワイヤボンド時のパワー半導体素子へのダメージを低減することが可能となる。銅に比較して再結晶温度が低く耐熱性の低いアルミは表面(封止樹脂に接する面)に露出しないため、従来のSiパワー半導体素子の動作温度よりも高温に保持しても結晶の粗大化による脆化の影響が出にくくなる。また、クラッド材のアルミ側がパワー半導体素子のアルミ電極と接合し、クラッド材の銅側に銅ワイヤボンドを行い、異種金属接合を回避することでアセンブリ後の半導体動作時に金属間化合物の生成による脆化を抑制して、熱応力によるクラック発生などを抑制することが可能となる。なお、クラッド材自体の接合部における金属間化合物の生成による脆化等は問題ないことが別途確認されている(非特許文献1参照)。
本発明の実施の形態1によるパワーモジュールの断面を示す概念図である。 本発明の実施の形態1によるパワーモジュールのカッターによるアルミ銅クラッドリボンの切断状態を示す断面の概念図である。 本発明の実施の形態1によるパワー半導体素子の主電極と基板の導体層をワイヤで電気的に接続した状態の一例を示すパワーモジュールの断面の概念図である。 図3の平面図である。 図3のA部拡大図である。 金属間化合物の成長が不均一な場合のモデル図である。 図4のワイヤをリボンに代えた場合の一例を示す図である。 本発明の実施の形態2によるパワーモジュールの断面を示す概念図である。 本発明の実施の形態2によるパワーモジュールのカッターによるアルミ銅クラッドリボンの切断状態を示す断面の概念図である。 本発明の実施の形態2によるパワー半導体素子の主電極と基板の導体層をワイヤで電気的に接続した状態の一例を示すパワーモジュールの断面の概念図である。 図10の平面図である。
実施の形態1.
 図1~図5、図7は実施の形態1によるパワーモジュールの概念図である。図1に示すように、パワー半導体素子1が、セラミック基板2(厚さ0.635mmのアルミナ基材21)の導体層22(銅製で厚さ0.4mm。図1のセラミック基板2を構成する下側の導体層23ではなく、上側の導体層)上に、はんだ5で接合されている。積層金属板であるアルミ銅クラッドリボン3(アルミ箔32(厚さ0.2mm)に銅箔31(厚さ0.05mm)が重ね合わされたリボン、幅10mm)を用い、パワー半導体素子(Si製ダイオード12mm×12mm×0.3mm)の主電極(アルミ製、11mm×11mm×0.01mm)11上に位置決めされ、超音波接合ツール4(先端2mm×2mm×20mm)によって超音波が印加されて接合部33を形成する。すなわち、アルミと銅を重ね合わせて圧接したクラッド材を用い、パワー半導体素子の電極表面に、このクラッド材のアルミ側を超音波接合などによって接合しておき、クラッド材の銅側にワイヤボンドを行うことで電気回路を形成する。
 次に図2に示すように、カッター40(機械式のものを含む)を用いて銅箔31のみを完全に切断し、アルミ箔32の厚み方向途中で止めて引きちぎり、パワー半導体素子上でアルミ銅クラッドリボン3を切断する。
 最後に図3に示すように、銅ワイヤ(φ0.4mm)を用いてワイヤボンディングを行い、最終的にパワー半導体素子の主電極とセラミック基板の導体層を電気的に接続する。
 図4は図3の上面図であるが、超音波接合ツールによってアルミ銅クラッドリボンの9か所を接合することで、ツール先端のあやめ(摩擦を大きくするための縦横の窪み)によって転写される接合痕41が9か所形成されており、その間の平坦な部分を用いて銅線のワイヤボンドを行うことで、接合痕の凹凸による接合品質への影響を抑制することができる。
 図5は、図3のアルミ銅クラッドリボンのA部拡大図であるが、あらかじめ不活性雰囲気下で温度400℃の条件下で3時間加熱し、アルミと銅の間にアルミと銅の金属間化合物層34を形成してある。パワーモジュールの動作温度あるいは品質保証期間によって異なるが、非特許文献1によれば(例えば図10参照)、400℃、3時間の加熱で金属間化合物を生成しておけば、200℃で3000時間保持したのと同等の金属間化合物厚さとなっており、その後、200℃に保持しても化合物の成長は時間の平方根に比例するため(アレニウスプロットによれば40℃につき50%まで金属間化合物の生成速度(厚さ)が小さくなるため、400℃と200℃で200℃差なら1/32まで薄くなる。32倍の厚さに成長するには二乗の時間を要するため、約1000倍の時間を要する)と考えられる)、極めて穏やかになる(例えば非特許文献1の170ページの説明参照)。
 熱処理はオーブンあるいは連続炉などで実施され、アルミの融点よりも低い温度で行うと考えると上限は600℃となる。10秒の加熱でアルミと銅の間の金属間化合物は5μmの厚さになるが、この厚さであれば200℃で0.32年の熱履歴に相当し、パワーモジュールの置かれる環境と製品寿命を考えると十分であると言える。
 また通常使用されるワイヤボンド用の最大径のアルミワイヤが0.5mmであり、電流容量的にそれを置き換えるのに必要なアルミ銅クラッドリボンの厚さは0.2mmとなる。厚さの1/2を越える金属間化合物が存在すると、脆くなることで、ループ形成時に割れなどが発生すると考えられる。
 つまり、パワー半導体素子の電極表面にクラッド材のアルミ側を超音波接合などによって接合後、さらに、クラッド材をあらかじめパワーモジュールの動作温度よりも高温で熱処理しておくことで、接合プロセス後にこれ以上膜厚が成長しないようにアルミ及び銅との各々の界面に金属間化合物を十分に形成しておく。
 なお、上記金属間化合物層34が元々ないか不十分な場合には、アルミ銅クラッドリボンと主電極の間の接合部33と未接合部では、半導体の動作時に温度分布が生じるために、例えば図6に示すように、銅とアルミの間の金属間化合物の成長速度に差が生じ、金属間化合物が不均一な厚さ方向の成長をするため(図6の厚さ方向に不均一な成長をした金属間化合物35を参照)、表面の銅ワイヤボンド接合部に影響が出る可能性がある。すなわち、図6の破線で囲った部分Bで銅ワイヤ6が剥離する懸念がある。
 ここでは上記に示した厚さ0.25mmのアルミと銅のクラッドリボンを用いたが、アルミと同等の柔軟性を有するその他の金属(マグネシウム、錫、インジウム)と、銅の組み合わせであってもワイヤボンドダメージ抑制の効果が得られる。
 また、厚さについては、アルミは0.05mm以上あればカッターのハーフカットなど、半導体の電極を傷付けない切断が可能(用いるリボンの最も薄い部分の厚さが0.05mmであり、装置でのハーフカットが可能)であり、1mm程度の厚さまでであれば良好な超音波接合と切断が可能である。
 一方の銅については、厚さ0.05mm以上あれば通常の銅ワイヤボンドに対しては、変形を下層のアルミに伝搬させない切断が可能なことを別途確認している。同様に、0.2mm以下であれば超音波接合と半導体素子上での切断が可能である。アルミと銅の厚さの比率については、1:1よりも銅が薄い方が、超音波接合が容易であると考えられる。しかし、それに限定する必要はない。
 ここでは、アルミ銅クラッドリボンを用いたが、あらかじめ半導体素子の表面電極よりも各辺が1mmずつ小さい寸法に切断した個片状のクラッド材を用いても同様の効果が得られる。また、ここではアルミナセラミック基板を用いたが、チッ化アルミあるいはチッ化シリコンなどのセラミック基板でも同様の効果が得られる。また、導体層として銅を用いたが、アルミ導体層のセラミック基板を用いても同様の効果が得られる。またリードフレームに対してパワー半導体素子のダイボンドあるいはワイヤボンドを行っても同様の効果が得られる。
 また、ここでは、パワー半導体素子としてダイオードを用いたが、IGBT(Insulated Gate Bipolar Transistor)に対しても同様の構成で組み込むことが可能である。また、ここでは、銅製の電極板を用いたが、アルミ製あるいはCIC(銅インバークラッド材)製板材を用いても同様の効果が得られる。
 また、ここでは、カッターによって銅を完全に切断して、アルミを引き離す工程としたが、銅の板厚の途中まで切断しても、後の工程で引き離すことができるため、同様にリボンの切断が可能であり、パワー半導体素子へのダメージを軽減することが可能となる。また、リボンにV溝を形成しておくことで、容易に切断することが可能となり、チップ上でのリボン切断を半導体素子へのダメージなしに実施することが可能となる。
 また、ここでは、パワー半導体素子の表面電極(11mm角、厚さ0.01mm)に比べて小さい先端形状(2mm角、長さ20mm)の(図示しない)超音波接合ツールを複数箇所別々に当てて、接合部を複数個作製したが、ツール表面にあやめを部分的に形成した(飛び地的に9か所形成)超音波接合ツールを用いることで、全面を一度に接合しても同様の効果が得られる。この方法の方が工数削減上は有利である。
 また、ここでは銅ワイヤボンドを用いて回路形成を行ったが、図7に示すように銅リボン61(幅2mm、厚さ0.2mm)を用いても同様の効果が得られる。この場合、銅ワイヤに比較して銅リボンは断面積が大きくなるため、電流容量が増し、ジュール発熱が減少して信頼性の向上が可能となる。
 また、ここでは、アルミ銅クラッドリボンを超音波接合することで、パワー半導体素子上に接合を行ったが、加熱加圧圧着、真空接合あるいは導電性接着剤による接合などによっても同様の効果が得られる。
 また、積層金属板の金属界面にあらかじめ熱処理によって金属間化合物層を形成しておくことにより、半導体装置の使用環境による金属間化合物の生成を穏やかにすることで特性の変化を小さくし、信頼性を確保することができる。
 さらに、積層金属板を構成する2層の部材のうち、半導体素子の表面に接する第一の部材が半導体素子の表面電極とほぼ同じ組成で、銅ワイヤと接する第二の部材が銅ワイヤとほぼ同じ組成であることから、接合プロセスあるいは半導体の動作温度より高温の動作時における金属拡散に伴う脆い金属間化合物層の生成を抑制することが可能となる。また、耐熱性の低い第一の部材をワイヤボンド界面近傍の表面(封止樹脂に接する面)に露出させないようにし、結晶の粗大化による脆化によってクラックの起点が発生するのを抑制することができる。
実施の形態2.
 図8~図11は、実施の形態2によるパワーモジュールの概念図である。図8に示すように、パワー半導体素子1が、セラミック基板2(厚さ0.657mmのアルミナ基材21)の導体層22(銅製厚さ0.4mm)上に、はんだ5で接合されている。アルミ銅クラッドリボン3(アルミ箔32(厚さ0.2mmで幅2mm)上に、幅2mm、スリット3mmのストライプ状の銅箔31が重ね合わされた幅10mmのリボン)を用い、パワー半導体素子(Si製ダイオード12mm×12mm×0.3mm)の主電極(アルミ製、11mm×11mm×0.01mm)11上に位置決めされ、超音波接合ツール4(先端2mm×2mm×20mm)によって超音波印加されて、銅パターンのない部分に接合部33を形成する。
 次に、図9に示すように、カッター40(機械式のものを含む)を用いて銅箔31のみを完全に切断し、アルミ箔32の途中で止めて引きちぎり、図2と同様に、パワー半導体素子上でアルミ銅クラッドリボン3を切断する。
 最後に、図10のように、銅ワイヤ(φ0.4mm)を用いてワイヤボンディングを行い、パワー半導体素子の主電極とセラミック基板の導体層を電気的に接続する。図11は図10の上面図であるが、超音波接合ツールによってクラッドリボンのアルミ部分9か所を接合することで、ツール先端のあやめ(摩擦を大きくするための縦横の窪み)によって転写される接合痕41が9か所形成されており、その間の銅パターン部分を用いて銅線のワイヤボンドを行うことで、リボンボンドの荷重あるいは接合時間等の超音波接合条件を穏やか(比較的小荷重、短時間接合の条件)にしてパワー半導体素子へのダメージを低減し、接合痕の凹凸による接合面積の増減など接合品質への影響を抑制することができる。
 アルミ銅クラッドリボンは、あらかじめ不活性雰囲気において、温度400℃の条件下で3時間加熱し、アルミと銅の間に金属間化合物層34を形成してある。パワーモジュールの動作温度あるいは品質保証期間によって異なるが、200℃で3000時間保持したのと同等の金属間化合物厚さとなっており、その後、200℃に保持しても化合物の成長は時間の平方根に比例する(非特許文献1参照)ため、極めて穏やかになる。
 ここでは所定の厚さ0.25mmのアルミと銅のクラッドリボンを用いたが、アルミと同等の柔軟性を有するその他の金属(マグネシウム、錫、インジウム)と、銅の組み合わせであっても、ワイヤボンドダメージを抑制する効果が得られる。
 また、厚さについては、アルミは、0.05mm以上あればカッターのハーフカット切断など、半導体の電極を傷付けない切断が可能であり、1mm程度の厚さまでであれば、一般に良好な超音波接合と切断が可能である。
 一方、銅については、一般に0.05mm以上あれば通常の銅ワイヤボンドに対しては、変形を下層のアルミに伝搬しないことが可能であり、アルミと銅の厚さの比率については、1:1よりも銅が薄い方が、変形の容易なアルミの厚さが銅より大きいため超音波接合が容易であると考えられるが、それに限定する必要はない。
 ここでは、アルミ銅クラッドリボンを用いたが、あらかじめ所定の大きさ、すなわち半導体素子の表面電極よりも各辺が1mmずつ小さい寸法に切断した個片状のクラッド材を用いても同様の効果が得られる。また、ここではアルミナセラミック基板を用いたが、チッ化アルミあるいはチッ化シリコンなどのセラミック基板でも同様の効果が得られる。さらに、導体層として銅を用いたが、アルミ導体層のセラミック基板を用いても同様の効果が得られる。
 ここではパワー半導体素子としてダイオードを用いたが、IGBT(Insulated Gate Bipolar Transistor)をはじめとするトランジスター素子に対しても同様の構成で組み込むことが可能である。
 また、ここでは、カッターによって銅を完全に切断して、アルミを引き離す工程としたが、銅の板厚の途中まで切断しても同様にリボンの切断が可能であり、パワー半導体素子へのダメージを軽減することが可能となる。
 また、ここでは、パワー半導体素子の表面電極(11mm角、厚さ0.01mm)に比べて小さい先端形状(2mm角、長さ20mm)の超音波接合ツールを複数箇所に当てて、接合部を複数個作製したが、ツール表面のあやめを部分的に形成した超音波接合ツールを用いることで、全面を一度に接合しても同様の効果が得られる。
 さらに、ここでは銅パターンをストライプ状としたが、水玉模様あるいはチェッカーフラッグ状としても同様の効果が得られる。また、ここでは、銅パターンはアルミ銅クラッドリボンの状態からエッチングなどで不要部分を除去することによって作製されるが、あらかじめパターン化した銅を用いて圧延し、クラッド化することでも同様の効果が得られる。この場合表面の凹凸のない(アルミに対して銅パターンが埋没した)状態となるが、接合性に影響しないため、特に問題とはならない。なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。
 1 パワー半導体素子、2 セラミック基板、3 アルミ銅クラッドリボン、4 超音波接合ツール、5 はんだ、6 銅ワイヤ、11 主電極、21 アルミナ基材、22、23 導体層、31 銅箔、32 アルミ箔、33 接合部、34 金属間化合物層、40 カッター、41 接合痕、61 銅リボン。

Claims (6)

  1. 基板と、
    この基板に配置されたパワー半導体素子と、
    このパワー半導体素子の表面に形成された電極と、
    この電極に接合された積層金属板と、
    この積層金属板と前記基板とを接続するワイヤと、を備えたパワーモジュールであって、
    前記積層金属板は、前記電極と対向する部材が前記電極と主たる材質が同じであり、前記ワイヤと対向する部材が前記ワイヤと主たる材質が同じである構成にされるとともに、
    前記積層金属板の間に金属間化合物層が5μm以上、100μm以下の厚さで形成されている、
    ことを特徴とするパワーモジュール。
  2. 前記積層金属板は、前記電極に接合される前に、予め前記パワーモジュールの動作温度よりも高温で熱処理されていることを特徴とする請求項1に記載のパワーモジュール。
  3. 前記積層金属板の前記ワイヤと対向する部材が、前記電極と対向する部材に部分的に積層されていることを特徴とする請求項1または請求項2に記載のパワーモジュール。
  4. 前記ワイヤは、前記パワー半導体素子の電極と同等の幅のリボン形状、あるいは前記パワー半導体素子の電極よりも小さい幅の薄板状であることを特徴とする請求項1から3のいずれか1項に記載のパワーモジュール。
  5. 前記積層金属板の前記電極と対向する部材がアルミを主とする組成で、前記ワイヤと対向する部材が銅を主とする組成であることを特徴とする請求項1から4のいずれか1項に記載のパワーモジュール。
  6. 前記積層金属板の前記電極と対向する部材の材質は、マグネシウム、錫、インジウムのうちのいずれかであることを特徴とする請求項1から5のいずれか1項に記載のパワーモジュール。
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