WO2016063744A1 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- WO2016063744A1 WO2016063744A1 PCT/JP2015/078719 JP2015078719W WO2016063744A1 WO 2016063744 A1 WO2016063744 A1 WO 2016063744A1 JP 2015078719 W JP2015078719 W JP 2015078719W WO 2016063744 A1 WO2016063744 A1 WO 2016063744A1
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- Prior art keywords
- copper
- aluminum
- electrode
- wire
- semiconductor element
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- 239000010949 copper Substances 0.000 claims abstract description 46
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000005253 cladding Methods 0.000 abstract 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 16
- 239000004020 conductor Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- 238000005304 joining Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000000275 quality assurance Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ABJSOROVZZKJGI-OCYUSGCXSA-N (1r,2r,4r)-2-(4-bromophenyl)-n-[(4-chlorophenyl)-(2-fluoropyridin-4-yl)methyl]-4-morpholin-4-ylcyclohexane-1-carboxamide Chemical compound C1=NC(F)=CC(C(NC(=O)[C@H]2[C@@H](C[C@@H](CC2)N2CCOCC2)C=2C=CC(Br)=CC=2)C=2C=CC(Cl)=CC=2)=C1 ABJSOROVZZKJGI-OCYUSGCXSA-N 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Definitions
- the present invention relates to a power module used in every scene from power generation or transmission to efficient use or regeneration of energy.
- Power modules are spreading in every product from industrial equipment to home appliances or information terminals, and modules mounted on home appliances are required to have high productivity and high reliability that can be used for various types as well as being smaller and lighter.
- it is also required to have a package form that can be applied to SiC semiconductors that are likely to become mainstream in the future because of high operating temperature and excellent efficiency.
- the power module is characterized by the fact that it is a semiconductor that handles high voltages of 100V or higher and large currents of 100A or more.
- To form a large current circuit of 100A or more it is a thick aluminum with a diameter of 0.5mm to the electrode on the surface of the power semiconductor element.
- an electric circuit is formed by wiring a plurality of wire bonds such as the above.
- the copper wire is harder and less likely to be deformed than the aluminum wire, there is a concern about damage such as shear fracture of the surface electrode of the power semiconductor element during wire bonding. Even if the device damage problem can be overcome, the thermal stress at the interface of the junction increases in accordance with the operating temperature when the operating temperature is as high as 250 ° C or higher, as in SiC power semiconductor devices. Therefore, it is difficult to ensure reliability such as temperature cycle resistance.
- Patent Document 1 proposes a method of reducing damage to a power semiconductor element by placing an aluminum foil on the surface of the power semiconductor element and performing copper wire bonding from the aluminum foil. Although this method may be able to solve the problem of damage, when aluminum itself is exposed to a high temperature of 175 ° C or higher, grain boundaries become apparent due to the coarsening of crystals due to recrystallization, leading to cracks and breaking. There are concerns.
- a buffer plate A having an expansion coefficient ( ⁇ 1) close to that of a power semiconductor element (Si) and a buffer plate B having an expansion coefficient ( ⁇ 2) close to that of a wire are disposed between the power semiconductor element and the wire.
- damage such as distortion due to a difference in expansion coefficient at the time of wire bonding is reduced, and at the same time, thermal stress generated in the joint is reduced to ensure reliability during high temperature operation.
- the buffer plate since the buffer plate is laminated by soldering, there is a concern that the heat resistance of the soldered portion is insufficient in the long term, such as temperature cycle resistance.
- the power module according to the present invention is A substrate, A power semiconductor element disposed on the substrate; An electrode formed on the surface of the power semiconductor element; A laminated metal plate joined to the electrode; A power module comprising a wire connecting the laminated metal plate and the substrate,
- the laminated metal plate is configured such that a member facing the electrode has the same main material as the electrode, and a member facing the wire has the same material as the wire.
- An intermetallic compound layer is formed between the laminated metal plates with a thickness of 5 ⁇ m or more and 100 ⁇ m or less, It is characterized by this.
- the clad material in which aluminum and copper are overlapped and pressed together acts as a buffer plate.
- Aluminum with a low recrystallization temperature and low heat resistance compared to copper is not exposed on the surface (surface in contact with the sealing resin), so even if the temperature is higher than the operating temperature of the conventional Si power semiconductor element, the crystal is coarse The influence of embrittlement due to crystallization becomes difficult to occur.
- the aluminum side of the clad material is bonded to the aluminum electrode of the power semiconductor element, and copper wire bonding is performed on the copper side of the clad material, thereby avoiding dissimilar metal bonding, thereby causing brittleness due to the formation of intermetallic compounds during semiconductor operation after assembly. It is possible to suppress the occurrence of cracks due to thermal stress. It has been separately confirmed that there is no problem with embrittlement due to the formation of intermetallic compounds at the joint of the clad material itself (see Non-Patent Document 1).
- FIG. 4 is a plan view of FIG. 3. It is the A section enlarged view of FIG. It is a model figure in case the growth of an intermetallic compound is non-uniform
- FIG. 4 shows the cross section of the power module by Embodiment 2 of this invention. It is a conceptual diagram of the cross section which shows the cutting state of the aluminum copper clad ribbon with the cutter of the power module by Embodiment 2 of this invention. It is a conceptual diagram of the cross section of the power module which shows an example of the state which electrically connected the main electrode of the power semiconductor element by Embodiment 2 of this invention, and the conductor layer of a board
- FIG. 1 to 5 and 7 are conceptual diagrams of a power module according to the first embodiment.
- the power semiconductor element 1 includes a conductor layer 22 (made of copper, thickness 0.4 mm; ceramic substrate 2 of FIG. 1) of a ceramic substrate 2 (alumina base material 21 having a thickness of 0.635 mm). It is joined with solder 5 on the upper conductor layer (not the lower conductor layer 23).
- An aluminum copper clad ribbon 3 (a ribbon in which a copper foil 31 (thickness 0.05 mm) is superposed on an aluminum foil 32 (thickness 0.2 mm), width 10 mm), which is a laminated metal plate, is used.
- a junction 33 is formed. That is, a clad material in which aluminum and copper are overlapped and pressure-welded is used, and the aluminum side of the clad material is joined by ultrasonic bonding or the like to the electrode surface of the power semiconductor element, and a wire bond is formed on the copper side of the clad material. By doing so, an electric circuit is formed.
- wire bonding is performed using a copper wire ( ⁇ 0.4 mm), and finally the main electrode of the power semiconductor element and the conductor layer of the ceramic substrate are electrically connected.
- FIG. 4 is a top view of FIG. 3, but is transferred by an error at the tip of the tool (longitudinal and lateral recesses for increasing friction) by joining nine places of the aluminum copper clad ribbon with an ultrasonic joining tool.
- Nine bonding marks 41 are formed, and by performing wire bonding of the copper wire using a flat portion between them, the influence on the bonding quality due to the unevenness of the bonding marks can be suppressed.
- FIG. 5 is an enlarged view of part A of the aluminum-copper clad ribbon of FIG. 3, which is preliminarily heated for 3 hours under an inert atmosphere at a temperature of 400 ° C., and between the aluminum and copper metal between the aluminum and copper.
- a compound layer 34 is formed. Although it depends on the operating temperature or quality assurance period of the power module, according to Non-Patent Document 1 (see, for example, FIG. 10), if an intermetallic compound is generated by heating at 400 ° C. for 3 hours, 3000 hours at 200 ° C. Since the intermetallic compound thickness is the same as that held, and the growth of the compound is proportional to the square root of the time even if it is held at 200 ° C.
- the upper limit is 600 ° C.
- the intermetallic compound between aluminum and copper becomes 5 ⁇ m thick, but this thickness corresponds to a thermal history of 0.32 years at 200 ° C., and the environment where the power module is placed It can be said that it is sufficient considering the product life.
- the aluminum wire of the maximum diameter for wire bonding normally used is 0.5 mm, and the thickness of the aluminum copper clad ribbon necessary to replace it in terms of current capacity is 0.2 mm.
- a temperature distribution occurs at the time of operation of the semiconductor at the junction 33 and the non-junction between the aluminum copper clad ribbon and the main electrode.
- a difference occurs in the growth rate of the intermetallic compound between copper and aluminum, and the intermetallic compound grows in a non-uniform thickness direction (non-uniform in the thickness direction in FIG. 6).
- See grown intermetallic compound 35 which may affect the copper wire bond joints on the surface. That is, there is a concern that the copper wire 6 may be peeled off at a portion B surrounded by a broken line in FIG.
- the aluminum and copper clad ribbons having a thickness of 0.25 mm shown above were used, but other metals (magnesium, tin, indium) having the same flexibility as aluminum and copper may be combined. The effect of suppressing wire bond damage is obtained.
- the thickness if the aluminum is 0.05 mm or more, it can be cut without damaging the semiconductor electrode such as a half cut of the cutter (the thickness of the thinnest part of the ribbon to be used is 0.05 mm. If the thickness is about 1 mm, good ultrasonic bonding and cutting are possible.
- a normal copper wire bond can be cut without propagating the deformation to the underlying aluminum if the thickness is 0.05 mm or more. Similarly, if it is 0.2 mm or less, ultrasonic bonding and cutting on a semiconductor element are possible. Regarding the ratio of the thickness of aluminum and copper, it is considered that ultrasonic bonding is easier when copper is thinner than 1: 1. However, it is not necessary to limit it.
- an aluminum copper clad ribbon is used, but the same effect can be obtained even if a piece of clad material whose sides are cut in advance by 1 mm smaller than the surface electrode of the semiconductor element is used.
- an alumina ceramic substrate is used here, a similar effect can be obtained with a ceramic substrate such as aluminum nitride or silicon nitride.
- copper was used as the conductor layer, the same effect can be obtained even when an aluminum conductor layer ceramic substrate is used. The same effect can be obtained by die bonding or wire bonding of the power semiconductor element to the lead frame.
- a diode is used as a power semiconductor element, but it can also be incorporated in an IGBT (Insulated Gate Bipolar Transistor) with the same configuration.
- IGBT Insulated Gate Bipolar Transistor
- the electrode plate made of copper is used, but the same effect can be obtained by using a plate made of aluminum or CIC (copper invar clad material).
- the copper was completely cut by a cutter and the aluminum was separated, but even if it was cut halfway through the copper plate thickness, it could be separated in a later process, so the ribbon was cut in the same way. It is possible to reduce damage to the power semiconductor element. Further, by forming the V-groove on the ribbon, it is possible to easily cut the ribbon, and the ribbon cutting on the chip can be performed without damaging the semiconductor element.
- an ultrasonic bonding tool (not shown) having a tip shape (2 mm square, length 20 mm) smaller than the surface electrode (11 mm square, thickness 0.01 mm) of the power semiconductor element is separately applied to a plurality of locations. Although several joints were made, the same effect can be obtained even if the entire surface is joined at once by using an ultrasonic joining tool in which the candy is partially formed on the tool surface (formation of 9 spots in the enclave) Is obtained. This method is more advantageous in terms of man-hour reduction.
- the circuit formation was performed using the copper wire bond here, the same effect can be obtained by using the copper ribbon 61 (width 2 mm, thickness 0.2 mm) as shown in FIG.
- the cross-sectional area of the copper ribbon is larger than that of the copper wire, the current capacity is increased, the Joule heat generation is reduced, and the reliability can be improved.
- the aluminum copper clad ribbon is ultrasonically bonded to the power semiconductor element, but the same effect can be obtained by heat-pressure bonding, vacuum bonding, or bonding with a conductive adhesive. It is done.
- the first member in contact with the surface of the semiconductor element has substantially the same composition as the surface electrode of the semiconductor element, and the second member in contact with the copper wire is substantially the same as the copper wire. Since they have the same composition, it is possible to suppress the formation of a brittle intermetallic compound layer associated with metal diffusion during the bonding process or operation at a temperature higher than the semiconductor operating temperature.
- the first member with low heat resistance should not be exposed to the surface in the vicinity of the wire bond interface (the surface in contact with the sealing resin), and the occurrence of a crack starting point due to embrittlement due to crystal coarsening should be suppressed. Can do.
- FIG. 8 to 11 are conceptual diagrams of a power module according to the second embodiment. As shown in FIG. 8, the power semiconductor element 1 is joined with the solder 5 on the conductor layer 22 (copper thickness 0.4 mm) of the ceramic substrate 2 (alumina base material 21 having a thickness of 0.657 mm). .
- An aluminum copper clad ribbon 3 (a ribbon having a width of 10 mm and a striped copper foil 31 having a width of 2 mm and a slit of 3 mm superimposed on an aluminum foil 32 (thickness 0.2 mm and width 2 mm)) is used as a power semiconductor element ( Positioned on a main electrode (aluminum, 11 mm ⁇ 11 mm ⁇ 0.01 mm) 11 of a Si diode 12 mm ⁇ 12 mm ⁇ 0.3 mm) and ultrasonically applied by an ultrasonic bonding tool 4 (tip 2 mm ⁇ 2 mm ⁇ 20 mm) Thus, the joint portion 33 is formed in a portion having no copper pattern.
- FIG. 10 wire bonding is performed using a copper wire ( ⁇ 0.4 mm) to electrically connect the main electrode of the power semiconductor element and the conductor layer of the ceramic substrate.
- FIG. 11 is a top view of FIG. 10, but is transferred by an error at the tip of the tool (longitudinal and lateral recesses for increasing friction) by joining the aluminum portion 9 of the clad ribbon with an ultrasonic joining tool.
- the ultrasonic bonding conditions such as ribbon bond load or bonding time are moderated (relatively small load).
- the condition for short-time bonding can reduce the damage to the power semiconductor element, and can suppress the influence on the bonding quality such as the increase or decrease of the bonding area due to the unevenness of the bonding marks.
- the aluminum copper clad ribbon was previously heated in an inert atmosphere at a temperature of 400 ° C. for 3 hours to form an intermetallic compound layer 34 between aluminum and copper. Although it depends on the operating temperature of the power module or the quality assurance period, the thickness of the intermetallic compound is the same as that held for 3000 hours at 200 ° C. Since it is proportional (see Non-Patent Document 1), it becomes extremely gentle.
- a clad ribbon made of aluminum and copper having a predetermined thickness of 0.25 mm was used.
- a wire The effect of suppressing bond damage is obtained.
- the thickness of aluminum if it is 0.05 mm or more, it is possible to perform cutting without damaging the semiconductor electrode, such as half-cut cutting of a cutter. If the thickness is about 1 mm, generally good ultrasonic bonding is possible. And can be cut.
- an aluminum copper clad ribbon is used here, the same effect can be obtained by using a piece of clad material that has been cut in advance to a predetermined size, that is, each side is 1 mm smaller than the surface electrode of the semiconductor element. can get.
- an alumina ceramic substrate is used here, a similar effect can be obtained with a ceramic substrate such as aluminum nitride or silicon nitride.
- copper was used as the conductor layer, the same effect can be obtained by using a ceramic substrate with an aluminum conductor layer.
- a diode is used as the power semiconductor element, but it can also be incorporated into a transistor element such as an IGBT (Insulated Gate Bipolar Transistor) with the same configuration.
- IGBT Insulated Gate Bipolar Transistor
- an ultrasonic bonding tool having a tip shape (2 mm square, length 20 mm) smaller than the surface electrode (11 mm square, thickness 0.01 mm) of the power semiconductor element is applied to a plurality of locations, and the bonded portion is formed.
- the same effect can be obtained even if the entire surface is bonded at once by using an ultrasonic bonding tool in which the surface of the tool is partially formed.
- the copper pattern is striped here, the same effect can be obtained by using a polka dot pattern or a checkered flag pattern.
- the copper pattern is produced by removing unnecessary portions from the state of the aluminum copper clad ribbon by etching or the like, but the same effect can be obtained by rolling with copper that has been patterned in advance and making it clad. can get. In this case, there is no surface irregularity (a copper pattern is buried in aluminum), but there is no particular problem because it does not affect the bondability. It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
また、動作温度が高く、効率に優れている点で、今後の主流となる可能性の高いSiC半導体に適用できるパッケージ形態であることも同時に求められている。
基板と、
この基板に配置されたパワー半導体素子と、
このパワー半導体素子の表面に形成された電極と、
この電極に接合された積層金属板と、
この積層金属板と前記基板とを接続するワイヤと、を備えたパワーモジュールであって、
前記積層金属板は、前記電極と対向する部材が前記電極と主たる材質が同じであり、前記ワイヤと対向する部材が前記ワイヤと主たる材質が同じである構成にされるとともに、
前記積層金属板の間に金属間化合物層が5μm以上、100μm以下の厚さで形成されている、
ことを特徴とするものである。
図1~図5、図7は実施の形態1によるパワーモジュールの概念図である。図1に示すように、パワー半導体素子1が、セラミック基板2(厚さ0.635mmのアルミナ基材21)の導体層22(銅製で厚さ0.4mm。図1のセラミック基板2を構成する下側の導体層23ではなく、上側の導体層)上に、はんだ5で接合されている。積層金属板であるアルミ銅クラッドリボン3(アルミ箔32(厚さ0.2mm)に銅箔31(厚さ0.05mm)が重ね合わされたリボン、幅10mm)を用い、パワー半導体素子(Si製ダイオード12mm×12mm×0.3mm)の主電極(アルミ製、11mm×11mm×0.01mm)11上に位置決めされ、超音波接合ツール4(先端2mm×2mm×20mm)によって超音波が印加されて接合部33を形成する。すなわち、アルミと銅を重ね合わせて圧接したクラッド材を用い、パワー半導体素子の電極表面に、このクラッド材のアルミ側を超音波接合などによって接合しておき、クラッド材の銅側にワイヤボンドを行うことで電気回路を形成する。
また通常使用されるワイヤボンド用の最大径のアルミワイヤが0.5mmであり、電流容量的にそれを置き換えるのに必要なアルミ銅クラッドリボンの厚さは0.2mmとなる。厚さの1/2を越える金属間化合物が存在すると、脆くなることで、ループ形成時に割れなどが発生すると考えられる。
つまり、パワー半導体素子の電極表面にクラッド材のアルミ側を超音波接合などによって接合後、さらに、クラッド材をあらかじめパワーモジュールの動作温度よりも高温で熱処理しておくことで、接合プロセス後にこれ以上膜厚が成長しないようにアルミ及び銅との各々の界面に金属間化合物を十分に形成しておく。
図8~図11は、実施の形態2によるパワーモジュールの概念図である。図8に示すように、パワー半導体素子1が、セラミック基板2(厚さ0.657mmのアルミナ基材21)の導体層22(銅製厚さ0.4mm)上に、はんだ5で接合されている。アルミ銅クラッドリボン3(アルミ箔32(厚さ0.2mmで幅2mm)上に、幅2mm、スリット3mmのストライプ状の銅箔31が重ね合わされた幅10mmのリボン)を用い、パワー半導体素子(Si製ダイオード12mm×12mm×0.3mm)の主電極(アルミ製、11mm×11mm×0.01mm)11上に位置決めされ、超音波接合ツール4(先端2mm×2mm×20mm)によって超音波印加されて、銅パターンのない部分に接合部33を形成する。
Claims (6)
- 基板と、
この基板に配置されたパワー半導体素子と、
このパワー半導体素子の表面に形成された電極と、
この電極に接合された積層金属板と、
この積層金属板と前記基板とを接続するワイヤと、を備えたパワーモジュールであって、
前記積層金属板は、前記電極と対向する部材が前記電極と主たる材質が同じであり、前記ワイヤと対向する部材が前記ワイヤと主たる材質が同じである構成にされるとともに、
前記積層金属板の間に金属間化合物層が5μm以上、100μm以下の厚さで形成されている、
ことを特徴とするパワーモジュール。 - 前記積層金属板は、前記電極に接合される前に、予め前記パワーモジュールの動作温度よりも高温で熱処理されていることを特徴とする請求項1に記載のパワーモジュール。
- 前記積層金属板の前記ワイヤと対向する部材が、前記電極と対向する部材に部分的に積層されていることを特徴とする請求項1または請求項2に記載のパワーモジュール。
- 前記ワイヤは、前記パワー半導体素子の電極と同等の幅のリボン形状、あるいは前記パワー半導体素子の電極よりも小さい幅の薄板状であることを特徴とする請求項1から3のいずれか1項に記載のパワーモジュール。
- 前記積層金属板の前記電極と対向する部材がアルミを主とする組成で、前記ワイヤと対向する部材が銅を主とする組成であることを特徴とする請求項1から4のいずれか1項に記載のパワーモジュール。
- 前記積層金属板の前記電極と対向する部材の材質は、マグネシウム、錫、インジウムのうちのいずれかであることを特徴とする請求項1から5のいずれか1項に記載のパワーモジュール。
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