JP6091443B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP6091443B2 JP6091443B2 JP2014016571A JP2014016571A JP6091443B2 JP 6091443 B2 JP6091443 B2 JP 6091443B2 JP 2014016571 A JP2014016571 A JP 2014016571A JP 2014016571 A JP2014016571 A JP 2014016571A JP 6091443 B2 JP6091443 B2 JP 6091443B2
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- layer
- semiconductor element
- layer structure
- conductive terminal
- conductive
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- 239000004065 semiconductor Substances 0.000 title claims description 168
- 239000000463 material Substances 0.000 claims description 116
- 239000000758 substrate Substances 0.000 claims description 36
- 238000005304 joining Methods 0.000 claims description 32
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 244
- 238000000034 method Methods 0.000 description 27
- 229910000679 solder Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000003466 welding Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005242 forging Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Description
いるため、大電流(〜600A以上)が流れ得る半導体モジュールにおいては、通電に必要なワイヤの本数が増加する。半導体素子が小型化すると、素子の表面に必要本数のワイヤを確保することが難しくなる。半導体モジュールが使用される温度環境が苛酷化するに従って、ワイヤボンドに要求されている信頼性を満足できなくなってきている。
造導電端子と、絶縁基板と半導体素子と二層構造導電端子を封止する樹脂部材と、樹脂部材を囲むケースと、を備え、二層構造導電端子は、接合部側が第1導電層を表面電極と対向させて半導体素子に接合されており、二層構造導電端子と半導体素子との接合部には、第2導電層に開口部が設けられていて、開口部に表面電極と第1導電層との接合面が形成されていて、二層構造導電端子の他端側は、ケースにインサートされて、外部に突出していることを特徴とする。
実施の形態1による半導体モジュールについて、図を参照して説明する。図1に、半導体モジュール100の全体構成を示す。半導体モジュール100は、ボンディングワイヤ2、二層構造導電端子3、導電端子(リードフレーム)4、絶縁基板5、放熱部材6、半導体素子(電力用トランジスタ10a、電力用ダイオード10bなど)10、ケース20、封止樹脂部材21などから構成されている。ボンディングワイヤ2、導電端子4、絶縁基板5、放熱部材6、半導体素子10などが封止樹脂部材21で封止されている。絶縁基板5は、導電パターン5aと導電パターン5bと絶縁基材5cより成る。
はんだ7は絶縁基板5の放熱面側と放熱部材6とを接合する。はんだ7の材料は融点が低く、熱伝導率の大きい金属が好ましく、一般的にはSn、Pb、Ag、Cu等を用いた合金が用いられる。その厚さは信頼性と放熱性の観点から、0.1mm〜0.3mm程度が好ましい。
実施の形態2による半導体モジュールについて、図を参照して説明する。図7に、実施の形態2による二層構造導電端子の端子先端部分を示す。本実施の形態では二層構造導電端子3における導電層3aの除去加工の深さが実施の形態1よりも浅くなっている。すなわち、導電層3aに形成されている開口部3oの深さは、導電層3aの厚さよりも小さい。ここでは開口部3oの底面に導電層3aが残る程度に、導電層3aをエッチングなどの
方法により除去加工する。二層構造導電端子3は、導電層材料と緩衝材層材料を圧接、鍛造、溶接、もしくは、ろう付けによって接合したものである。
衝材層3bとの接触面同士が摺れて、接触面を覆っている酸化膜等の、接合を阻害する膜等が除去される。二層構造導電端子3の導電層3aの上面には超音波ホーン9の突起部が食い込んでいる。超音波ホーン9の当接部に未除去の薄い導電層3aがあるため、実施の形態1と比較して緩衝材層3bの潰れ量が大きくなる
実施の形態3による半導体モジュールについて、図を参照して説明する。図10Aと図10Bに、本実施の形態による二層構造導電端子の端子先端部分を示す。本実施の形態では、二層構造導電端子3の導電層3aは接合部3sの全てで除去加工が施工されている。残しておく導電層3aの厚さが大きければ、その分、半導体素子10と二層構造導電端子3の間に大きな電流を流すことが可能になる。しかし、硬質な導電層3aは超音波接合時に直下の緩衝材層3bを押しつぶすので、本実施の形態では緩衝材層3bが完全に露呈している。図10Aに示す二層構造導電端子3は、導電層材料と緩衝材層材料を圧接するこ
とによって得られる。導電層材料の長さは、緩衝材層材料よりも短めに設定しておく。図10Bに示す二層構造導電端子3は、導電層材料と緩衝材層材料を鍛造後、先端部分をエッチングすることによって得られる。
覆っている酸化膜等の、接合を阻害する膜等が除去される。超音波ホーン9の当接部に緩衝材層3bの潰れが生じ始めている。
実施の形態4による半導体モジュールについて、図を参照して説明する。図13Aと図13Bに、本実施の形態による二層構造導電端子の端子先端部分を示す。二層構造導電端子3は、導電層材料と緩衝材層材料を圧接または鍛造によって接合したものである。開口部3oは、導電層材料と緩衝材層材料を接合する前に、導電層3aにエッチングなどにより形成しておく。緩衝材層3bは、開口部3oから盛り上がっていて、開口部3oを一部或いは全部を埋めている。
実施の形態5による半導体モジュールについて、図を参照して説明する。図14に、本実施の形態による二層構造導電端子の端子先端部分を示す。導電層3aと緩衝材層3bは溶接、もしくは、ろう付けによって重ね接合されている。本実施の形態による二層構造導電端子3は、二層構造を有するが重ね構造導電端子とも呼ぶべきもので、この重ね構造導電端子によれば、接合部3sは緩衝材層材料で構成されている。除去加工を施さなくても、接合部3sに緩衝材層3bが露呈している。
Claims (14)
- 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが接合されてなる二層構造導電端子と、
前記絶縁基板と前記半導体素子と前記二層構造導電端子を封止する樹脂部材と、
前記樹脂部材を囲むケースと、を備え、
前記二層構造導電端子は、接合部側が前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記二層構造導電端子と前記半導体素子との接合部には、前記第2導電層に開口部が設けられていて、
前記開口部に前記表面電極と前記第1導電層との接合面が形成されていて、
前記二層構造導電端子の他端側は、前記ケースにインサートされて、外部に突出していることを特徴とする半導体モジュール。 - 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが接合されてなる二層構造導電端子と、
前記絶縁基板と前記半導体素子と前記二層構造導電端子を封止する樹脂部材と、を備え、前記二層構造導電端子は前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記二層構造導電端子と前記半導体素子との接合部には、前記第2導電層に開口部が設けられていて、
前記開口部に前記表面電極と前記第1導電層との接合面が形成されていて、
前記二層構造導電端子の接合部側の先端部は、端子曲げ部で屈曲していることを特徴とする半導体モジュール。 - 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが接合されてなる二層構造導電端子と、
前記絶縁基板と前記半導体素子と前記二層構造導電端子を封止する樹脂部材と、
前記樹脂部材を囲むケースと、を備え、
前記二層構造導電端子は、接合部側が前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記二層構造導電端子と前記半導体素子との接合部には、前記第2導電層に開口部が設けられていて、
前記開口部に前記表面電極と前記第1導電層との接合面が形成されていて、
前記二層構造導電端子の他端側は、前記ケースにインサートされて、外部に突出していて、しかも前記二層構造導電端子の接合部側の先端部は、端子曲げ部で屈曲していることを特徴とする半導体モジュール。 - 前記第1導電層は、前記表面電極よりも厚いことを特徴とする請求項1から3のいずれか1項に記載の半導体モジュール。
- 前記開口部は、側方が閉じた形状を有していることを特徴とする請求項1から4のいずれか1項に記載の半導体モジュール。
- 前記開口部は、側方が開放された形状を有していることを特徴とする請求項1から4のいずれか1項に記載の半導体モジュール。
- 前記開口部の深さは、前記第2導電層の厚さよりも小さいことを特徴とする請求項5または6に記載の半導体モジュール。
- 前記開口部の底面に、前記第2導電層が残っていることを特徴とする請求項5または6に記載の半導体モジュール。
- 前記開口部は、盛り上がった前記第1導電層で埋められていることを特徴とする請求項5または6に記載の半導体モジュール。
- 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが接合されてなる二層構造導電端子と、
前記絶縁基板と前記半導体素子と前記二層構造導電端子を封止する樹脂部材と、
前記樹脂部材を囲むケースと、を備え、
前記二層構造導電端子は、接合部側が前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記二層構造導電端子と前記半導体素子との接合部では、前記第1導電層は露呈していて、
前記第1導電層が露呈している部分に前記表面電極と前記第1導電層との接合面が形成されていて、
前記二層構造導電端子の他端側は、前記ケースにインサートされて、外部に突出していることを特徴とする半導体モジュール。 - 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが重ね接合されてなる重ね構造導電端子と、
前記絶縁基板と前記半導体素子と前記重ね構造導電端子を封止する樹脂部材と、
前記樹脂部材を囲むケースと、を備え、
前記重ね構造導電端子は、接合部側が前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記重ね構造導電端子と前記半導体素子との接合部には、前記表面電極と前記第1導電層との接合面が形成されていて、
前記重ね構造導電端子の他端側は、前記ケースにインサートされて、外部に突出していることを特徴とする半導体モジュール。 - 両面に導電パターンが形成されている絶縁基板と、
前記絶縁基板が一方の面に接合され、前記一方の面と対向する面には表面電極が形成されている半導体素子と、
前記表面電極よりも硬度が低くかつ第1の電気伝導率を有する第1導電層と前記第1の電気伝導率よりも大きい第2の電気伝導率を有する第2導電層とが接合されてなる二層構造導電端子と、
前記絶縁基板と前記半導体素子と前記二層構造導電端子を封止する樹脂部材と、
前記樹脂部材を囲むケースと、を備え、
前記二層構造導電端子は、接合部側が前記第1導電層を前記表面電極と対向させて前記半導体素子に接合されており、
前記二層構造導電端子と前記半導体素子との接合部には開口部が設けられていて、
前記二層構造導電端子の他端側は、前記ケースにインサートされて、外部に突出していることを特徴とする半導体モジュール。 - 前記半導体素子の少なくとも一部がワイドバンドギャップ半導体により形成されていることを特徴とする請求項1から12のいずれか1項に記載の半導体モジュール。
- 前記ワイドバンドギャップ半導体は、炭化珪素,窒化ガリウム系材料,ダイヤモンドのいずれかの半導体であることを特徴とする請求項13に記載の半導体モジュール。
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |