JP7088421B1 - 半導体装置および電力変換装置 - Google Patents
半導体装置および電力変換装置 Download PDFInfo
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- JP7088421B1 JP7088421B1 JP2021558785A JP2021558785A JP7088421B1 JP 7088421 B1 JP7088421 B1 JP 7088421B1 JP 2021558785 A JP2021558785 A JP 2021558785A JP 2021558785 A JP2021558785 A JP 2021558785A JP 7088421 B1 JP7088421 B1 JP 7088421B1
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- metal foil
- semiconductor device
- surface electrode
- semiconductor element
- power
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052737 gold Inorganic materials 0.000 claims description 4
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Abstract
Description
図1は、実施の形態1における半導体装置を示す平面構造模式図である。図2は、実施の形態1における半導体装置を示す断面構造模式図である。図2は、図1の一点鎖線AAにおける断面構造模式図である。
本実施の形態2においては、実施の形態1で用いた配線部材であるワイヤ5を板状配線部材8に置き換えた点が異なる。このように、配線部材として板状配線部材8を用いた場合においても、金属箔3をパワー半導体素子1の表面の表面電極2と撹拌領域4を介して部分的に接合したので、金属箔3の端部32での応力を緩和することができ、表面電極2のクラックの発生を抑制することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
ここでは、上述した実施の形態1~2において説明した半導体装置を適用した電力変換装置について説明する。本開示は特定の電力変換装置に限定されるものではないが、以下、実施の形態3として、三相のインバータに本開示を適用した場合について説明する。
Claims (9)
- 表面と裏面とを有する半導体素子と、
前記半導体素子の表面上に形成された表面電極と、
断面視において上面および下面が波打つ形状であり、前記上面からみて凹部が窪み部であり、前記窪み部で前記表面電極の上面上に部分的に接合された金属箔と、
を備え、
前記表面電極は、隣接する前記窪み部で挟まれた領域で盛り上がり前記金属箔の下面と接しており、
前記金属箔は、前記金属箔の外周領域と前記表面電極の上面とが接合されてない、半導体装置。 - 前記表面電極と前記金属箔とは、直接接合された、請求項1に記載の半導体装置。
- 前記直接接合された領域には、撹拌領域が形成されている、請求項2に記載の半導体装置。
- 前記金属箔の材料は、アルミニウム、銅、ニッケル、金、モリブデンまたはこれらのいずれかを主成分とする合金である、請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記金属箔の上面には、配線部材が配置された、請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記配線部材は、前記金属箔と直接接合された、請求項5に記載の半導体装置。
- 前記配線部材は、接合材を介して前記金属箔の上面と接合された、請求項5に記載の半導体装置。
- 前記配線部材の材料は、銅、アルミニウムまたはこれらのうち少なくとも一方を含む合金である、請求項5から請求項7のいずれか1項に記載の半導体装置。
- 請求項1から請求項8のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた、電力変換装置。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10261664A (ja) * | 1997-01-17 | 1998-09-29 | Furukawa Electric Co Ltd:The | 半導体素子、突起電極の形成方法およびワイヤボンディング方法 |
JPH11274185A (ja) * | 1998-01-22 | 1999-10-08 | Hitachi Ltd | 圧接型半導体装置、及びこれを用いた変換器 |
JP2001102400A (ja) * | 1998-11-09 | 2001-04-13 | Nippon Soken Inc | 電気機器およびその製造方法 |
JP2015142063A (ja) * | 2014-01-30 | 2015-08-03 | 三菱電機株式会社 | パワーモジュール及びパワーモジュールの製造方法 |
WO2016063744A1 (ja) * | 2014-10-20 | 2016-04-28 | 三菱電機株式会社 | パワーモジュール |
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JP2006173509A (ja) * | 2004-12-20 | 2006-06-29 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
DE102014222819B4 (de) | 2014-11-07 | 2019-01-03 | Danfoss Silicon Power Gmbh | Leistungshalbleiterkontaktstruktur mit Bondbuffer sowie Verfahren zu dessen Herstellung |
JP6938966B2 (ja) | 2017-03-02 | 2021-09-22 | 昭和電工マテリアルズ株式会社 | 接続構造体の製造方法、接続構造体及び半導体装置 |
JP7109347B2 (ja) * | 2018-12-03 | 2022-07-29 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10261664A (ja) * | 1997-01-17 | 1998-09-29 | Furukawa Electric Co Ltd:The | 半導体素子、突起電極の形成方法およびワイヤボンディング方法 |
JPH11274185A (ja) * | 1998-01-22 | 1999-10-08 | Hitachi Ltd | 圧接型半導体装置、及びこれを用いた変換器 |
JP2001102400A (ja) * | 1998-11-09 | 2001-04-13 | Nippon Soken Inc | 電気機器およびその製造方法 |
JP2015142063A (ja) * | 2014-01-30 | 2015-08-03 | 三菱電機株式会社 | パワーモジュール及びパワーモジュールの製造方法 |
WO2016063744A1 (ja) * | 2014-10-20 | 2016-04-28 | 三菱電機株式会社 | パワーモジュール |
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