WO2016035785A1 - 導電膜および導電パターンの製造方法 - Google Patents
導電膜および導電パターンの製造方法 Download PDFInfo
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- WO2016035785A1 WO2016035785A1 PCT/JP2015/074832 JP2015074832W WO2016035785A1 WO 2016035785 A1 WO2016035785 A1 WO 2016035785A1 JP 2015074832 W JP2015074832 W JP 2015074832W WO 2016035785 A1 WO2016035785 A1 WO 2016035785A1
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- WIPO (PCT)
- Prior art keywords
- acid
- film
- conductive
- polymer
- photoacid generator
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
- G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
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- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/003—Apparatus or processes specially adapted for manufacturing conductors or cables using irradiation
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- H01B13/0036—Details
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
Definitions
- the present invention relates to a method for manufacturing a conductive film and a conductive pattern, and more specifically, to a method for manufacturing a conductive film and a conductive pattern using doping of a conductive polymer with an acid generated by a photoacid generation reaction.
- a transparent conductive film formed using a conductive polymer has been studied for application to electrolytic capacitors, antistatic agents, batteries, organic EL elements, and the like.
- a conductive polymer As a transparent conductive film, it is necessary to pattern it into a shape according to the purpose.
- Conventional patterning methods for conductive polymers include photo-etching methods (see Patent Document 1) and screen printing methods, all of which have the disadvantage that the process is complicated and the resulting line width is large. there were.
- Patent Document 1 photo-etching methods
- screen printing methods all of which have the disadvantage that the process is complicated and the resulting line width is large. there were.
- a wet process using an etchant is used at the time of patterning as in the method of Patent Document 1, there is also a problem that the conductive layer is adversely affected.
- the present invention has been made in view of the above circumstances, and an object thereof is to provide a method for producing a conductive film and a conductive pattern utilizing photoacid generation and acid multiplication.
- the present inventors used a photoacid generator and an acid proliferator that generates an acid in an autocatalytic manner, and generated and proliferated by irradiating them with light. It is found that acid can be used as a dopant for conductive polymers, and the above-mentioned photoacid generation is performed by bonding and exposing a conductive polymer film and an acid generating film containing an acid proliferating agent and a photoacid generator. It has been found that a conductive film utilizing the dry doping phenomenon due to the above can be produced, and further, by conducting masking during exposure, a conductive pattern can be produced by dry photo-patterning, and the present invention has been completed.
- the present invention 1.
- a stacking step of stacking an acid generating film containing an acid multiplication agent and a photoacid generator on a polymer film containing a conductive polymer formed on a substrate to obtain a stack, and the acid generation of the stack A light irradiation step of irradiating light from the film side, a doping step of doping the conductive polymer with an acid generated and propagated in the acid generation film by the light irradiation, and peeling the acid generation film from the polymer film A peeling step, and a method for producing a conductive film, comprising: 2.
- a conductive film or conductive pattern forming composition comprising a conductive polymer, an acid proliferating agent, and a photoacid generator; 7).
- an acid generation layer in which an acid that is laminated on a polymer film containing a conductive polymer and generated and propagated by light irradiation migrates onto the polymer film and acts as a dopant for the conductive polymer.
- An acid generating layer forming composition comprising an acid proliferating agent and a photoacid generator, 8).
- a composition for forming a polymer film containing a conductive polymer and a composition for forming an acid generation layer containing an acid multiplier and a photoacid generator kit 10.
- the conductive polymer includes poly (3,4-ethylenedioxythiophene), the acid proliferating agent is a compound that generates alkyl or aryl sulfonic acid by an acid-catalyzed reaction, and the photoacid generator includes: 9 or 10 conductive film or conductive pattern manufacturing kit which is naphthaleneimide-arylsulfonic acid ester, 12
- a method for doping a conductive polymer characterized in that the conductive polymer is doped with an acid generated and propagated by irradiating the acid multiplier and the photoacid generator with light.
- a photoacid generator and an acid proliferator that generates acid in an autocatalytic manner are used, and the acid generated and propagated by irradiating with light is used as a dopant for the conductive polymer. It is possible to produce a conductive film by doping or a conductive pattern by dry photopatterning.
- FIG. 3 is a graph showing the time change of the FT-IR spectrum when the acid generation film produced in Example 1 is irradiated with light of wavelength 365 nm at 0 or 10 J / cm 2 and heated at 120 ° C. It is a figure which shows the time change of the electrical conductivity when the conductive film produced in Example 2 is irradiated with 0 or 10 J / cm 2 of light having a wavelength of 365 nm and heated at 120 ° C.
- 6 is a schematic view of a dry photopatterning process in Example 3.
- FIG. 6 is a diagram showing a pattern formed in Example 3.
- the manufacturing method of the electrically conductive film which concerns on this invention contains an acid multiplication agent and a photo-acid generator on the polymer film containing the conductive polymer formed on the board
- a doping step for doping and a peeling step for peeling the acid generating film from the polymer film are provided.
- the method for laminating the acid generating film on the polymer film is not particularly limited, but the acid generating film is formed by coating and drying the acid generating layer forming composition on the polymer film.
- the acid generating film is formed by coating and drying the acid generating layer forming composition on the polymer film.
- Examples thereof include a method of laminating, a method of laminating an acid generating film prepared in advance by applying and drying an acid generating layer forming composition on a substrate (support), and a polymer film.
- the latter method is preferable because it can be performed in a dry manner and does not cause problems such as erosion of the polymer film.
- the acid multiplier is decomposed to generate an acid by a catalytic reaction triggered by an acid generated from the photoacid generator, and further, an acid is generated by an autocatalytic decomposition reaction by an acid generated from the acid multiplier itself. Acid grows in the membrane.
- the irradiation light include radiation such as ultraviolet rays or visible rays having a wavelength of 190 to 500 nm.
- a radiation light source a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a metal halide lamp, an argon gas laser, or the like can be used.
- the amount of radiation irradiation varies depending on the type and content of each component, the film thickness of the polymer film and the acid generation film, etc., and thus cannot be specified unconditionally.
- a high pressure mercury lamp 0.1 to 15 J / cm 2 Degree.
- the conductive polymer is doped with the acid generated and propagated in the acid generating film by the catalytic reaction.
- the doping in the present invention is to dope with an acid (dopant) generated in an acid generating film when an undoped conductive polymer is used as the conductive polymer constituting the polymer film.
- an acid (dopant) generated in an acid generating film when an undoped conductive polymer is used as the conductive polymer constituting the polymer film.
- a conductive polymer doped with an acid (dopant) is used as the conductive polymer constituting the polymer film, it is generated in the acid generating film with the acid that is the dopant of the conductive polymer. With dopant exchange with the acid.
- the light irradiation step and the doping step are performed in parallel, that is, during the light irradiation step after the start of light irradiation, the acid proliferated by decomposition of the acid proliferating agent (acid growth).
- the above-described doping may occur due to transfer to a polymer film.
- heating may be used in combination in the light irradiation step and / or the doping step, and heating may be performed after the light irradiation step and / or the doping step. May be.
- the heating temperature is not particularly limited, but is usually preferably about 80 to 150 ° C, more preferably about 100 to 130 ° C.
- the heating time is preferably about 5 to 60 minutes, more preferably about 10 to 50 minutes.
- the acid generating film is peeled off from the polymer film, whereby a conductive film having high conductivity is obtained by doping in the doping step.
- the peeling method is not particularly limited, and examples include a method of immersing in a stripping solution and a method of physically peeling (peeling peeling). In this case as well, physical peeling can be performed. Is preferred. In addition, in order to improve this physical peelability, it is preferable to mix
- a conductive pattern having a desired pattern can be produced by performing a masking process for masking the acid generating film after the light irradiation process after the lamination process. More specifically, by irradiating light through a photomask having a desired pattern, acid is generated and propagated only in the portion of the acid generating film that has received light irradiation, and the light irradiation in the polymer film is performed. Since only the portion in contact with the portion (acid generation / proliferation portion) is doped to impart high conductivity, a desired conductive pattern according to the pattern shape of the photomask can be manufactured.
- the photoacid generator used in the acid generation film is not particularly limited as long as it is a compound that generates acid upon irradiation with light (radiation). Examples include methyl-s-triazine compounds, diaryl iodonium salts, triaryl sulfonium salts, other sulfonium salts, quaternary ammonium salts, sulfonic acid esters, and the like.
- trichloromethyl-s-triazine compound examples include 2,4,6-tris (trichloromethyl) -s-triazine, 2-phenyl-4,6-bis (trichloromethyl) -s-triazine, 2- ( 4-chlorophenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (3-chlorophenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (2-chlorophenyl) -4 , 6-Bis (trichloromethyl) -s-triazine, 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (3-methoxyphenyl) -4,6-bis (Trichloromethyl) -s-triazine, 2- (2-methoxyphenyl) -4,6-bis (trichloromethyl) -s-triazin
- diaryliodonium salts include diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium trifluoroacetate, diphenyliodonium-p-toluenesulfonate, Diphenyliodonium butyltris (2,6-difluorophenyl) borate, diphenyliodonium hexyltris (p-chlorophenyl) borate, diphenyliodoniumhexyltris (3-trifluoromethylphenyl) borate, 4-methoxyphenyliodoniumtetrafluoroborate, 4- Methoxyphenyliodonium hexafluorophor Phonate, 4-methoxy
- triarylsulfonium salt examples include triphenylsulfonium tetrafluoroborate, triphenylsulfonium hexafluorophosphonate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoroacetate, triphenylsulfonium -P-toluenesulfonate, triphenylsulfonium butyltris (2,6-difluorophenyl) borate, triphenylsulfonium hexyltris (p-chlorophenyl) borate, triphenylsulfonium hexyltris (3-trifluoromethylphenyl) borate, 4 -Methoxyphenyldiphenylsulfonium tetrafluoroborate, 4-methoxyphenyl
- sulfonium salts include (4-hydroxy-1-naphthyl) dimethylsulfonium tetrafluoroborate, (4-hydroxy-1-naphthyl) dimethylsulfonium hexafluorophosphonate, and (4-hydroxy-1-naphthyl) dimethyl.
- quaternary ammonium salts include tetramethylammonium tetrafluoroborate, tetramethylammonium hexafluorophosphonate, tetramethylammonium hexafluoroarsenate, tetramethylammonium trifluoromethanesulfonate, tetramethylammonium trifluoroacetate, tetramethyl Ammonium-p-toluenesulfonate, tetramethylammonium butyltris (2,6-difluorophenyl) borate, tetramethylammonium hexyltris (p-chlorophenyl) borate, tetramethylammonium hexyltris (3-trifluoromethylphenyl) borate, Tetrabutylammonium tetrafluoroborate, tetrabutylammonium hexafluorophos , Tetrabutylammonium
- sulfonic acid ester examples include ⁇ -hydroxymethylbenzoin-p-toluenesulfonic acid ester, ⁇ -hydroxymethylbenzoin-trifluoromethanesulfonic acid ester, ⁇ -hydroxymethylbenzoin-methanesulfonic acid ester, pyrogallol-tri (p -Toluenesulfonic acid ester, pyrogallol-tri (trifluoromethanesulfonic acid) ester, pyrogallol-trimethanesulfonic acid ester, 2,4-dinitrobenzyl-p-toluenesulfonic acid ester, 2,4-dinitrobenzyl-trifluoromethanesulfone Acid ester, 2,4-dinitrobenzyl-methanesulfonic acid ester, 2,4-dinitrobenzyl-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,6-ddi
- organic sulfonic acid esters derived from organic sulfonic acids and alcohols are preferred, and aryl sulfonic acids and alcohols having an aryl group in the molecule
- An aryl sulfonic acid ester derived from is more preferable, and a naphthalimide-aryl sulfonic acid ester derived from N-hydroxynaphthalimide and an aryl sulfonic acid is even more preferable.
- 2,6-dinitrobenzyl-p-toluenesulfonic acid ester 2,6-dinitrobenzyl-trifluoromethanesulfonic acid ester
- p-toluenesulfonic acid-1,8-naphthalimide N-hydroxynaphthalimide -Trifluoromethanesulfonic acid ester
- p-toluenesulfonic acid-1,8-naphthalimide is optimal.
- the acid proliferating agent is not particularly limited, but considering the balance between solubility in organic solvents and acid growth ability, organic sulfone derived from organic sulfonic acid and alcohol Acid ester derivatives are preferred.
- organic sulfonate derivative examples include cyclohexyl-p-toluenesulfonate, cyclohexylbenzenesulfonate, cyclohexyl-o-nitrobenzenesulfonate, cyclohexyl-m-nitrobenzenesulfonate, cyclohexyl-p-nitrobenzenesulfonate, cyclohexyl- ⁇ -naphthalenesulfonate, Cyclohexyl methanesulfonate, 2-methylcyclohexyl-p-toluenesulfonate, 2-methylcyclohexylbenzenesulfonate, 2-methylcyclohexyl-o-nitrobenzenesulfonate, 2-methylcyclohexyl-m-nitrobenzenesulfonate, 2-methylcyclohexyl-p-nitrobenzenesulfonate 2-methylcyclohexyl-p
- 1,3-cyclohexylenebis (benzenesulfonate), 1,3-cyclohexylenebis (o-nitrobenzenesulfonate), 1,3-cyclohexylenebis (m-nitrobenzenesulfonate), 1,3-cyclohexylenebis (P-nitrobenzenesulfonate), 1,3-cyclohexylenebis (1-naphthalenesulfonate), 1,3-cyclohexylenebis (2-naphthalenesulfonate), 1,3-cyclohexylenebis (methanesulfonate), 1,4 -Cyclohexylenebis (p-toluenesulfonate), 1,4-cyclohexylenebis (benzenesulfonate), 1,4-cyclohexylenebis (o-nitrobenzenesulfonate), 1,4-cyclohexylenebis (m-nitrobenzenesulfonate) 1, -Cyclo
- 1,4-cyclohexanediol di p-toluenesulfonate 1,3-cyclohexylenebis (benzenesulfonate), 1,3-cyclohexylenebis (o-nitrobenzenesulfonate), 1,3-cyclohexylenebis (m- Nitrobenzenesulfonate), 1,3-cyclohexylenebis (p-nitrobenzenesulfonate), 1,3-cyclohexylenebis (1-naphthalenesulfonate), 1,3-cyclohexylenebis (2-naphthalenesulfonate), 1,3 -Cyclohexylenebis (methanesulfonate), 1,4-cyclohexylenebis (p-toluenesulfonate), 1,4-cyclohexylenebis (benzenesulfonate), 1,4-cyclohexylenebis (o-nitrobenzenesulfonate)
- the organic sulfonic acid ester derivative can be synthesized from a corresponding organic sulfonic acid or a halide thereof and an alcohol according to a conventional method, or can be obtained as a commercial product.
- Specific examples of the organic sulfonic acid include benzenesulfonic acid, p-toluenesulfonic acid, 4-bromobenzenesulfonic acid, 4-methoxybenzenesulfonic acid, 4-benzyloxybenzenesulfonic acid, 1-naphthylsulfonic acid, and 2-naphthyl.
- Examples include sulfonic acid, 1,3-benzenedisulfonic acid, methanesulfonic acid, ethanesulfonic acid, ethanesulfonic acid, 2-nitrobenzenesulfonic acid, 3-nitrobenzenesulfonic acid, and 4-nitrobenzenesulfonic acid.
- the alcohol include methanol, ethanol, propanol, isopropanol, 2-phenylethanol, 1-phenylpropanol, butanol, isobutanol, sec-butanol, tert-butanol, amyl alcohol, cyclohexanol, 2-methylcyclohexanol, 4-methylcyclohexanol, 4- (tert-butyl) cyclohexanol, 2-cyclohexylcyclohexanol, 4-cyclohexylcyclohexanol, 2,6-dimethylcyclohexanol, benzhydrol, 1-phenylethanol, 2,3-dihydro Inden-2-ol, 2-phenyl-1,3-dioxane-5-ol, ethylene glycol diethylene glycol, propylene glycol, 2,2-dimethyl-1 3-propanediol, 1,4-butanediol, 2,3-butan
- the easy release agent is for facilitating release from the polymer film, and examples thereof include silicone-based easy release agents and fluorine-based easy release agents, which are available as commercial products. . Specific examples thereof include OPTOOL DSX (manufactured by Daikin Industries, Ltd.), Novec EGC-1720 (manufactured by Sumitomo 3M Limited), and the like.
- composition for forming an acid generation layer and method for producing acid generation film comprises a photoacid generator, an acid multiplication agent, and an easy-release agent as required. Is included.
- the amount used is not particularly limited, but in order to generate a sufficient release action, with respect to the total mass 1 of the photoacid generator and acid multiplication agent, About 0.1 to 100 times by mass is preferable, about 0.5 to 50 times by mass is more preferable, and about 1 to 10 times by mass is even more preferable.
- an appropriate one can be selected and used depending on the material to be used.
- organic solvents may be used alone or in combination of two or more.
- the amount of the organic solvent to be used is not particularly limited. However, in consideration of applicability and the like, an amount such that the solid content concentration of the photoacid generator or the like is about 0.1 to 20% by mass is preferable. An amount of 5 to 10% by mass is more preferable.
- the acid generating film used in the production method of the present invention is a case where the above acid generating layer forming composition is heated on a polymer film or a substrate (support) and then heated. Is produced by evaporating it.
- the application method of the composition is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transfer printing method, a roll coating method, a brush coating method, an ink jet method, and a spray method. It is preferable to adjust the viscosity and surface tension of the composition.
- the heating atmosphere is not particularly limited, and may be an air atmosphere, an inert gas such as nitrogen, or a vacuum. The heating temperature is appropriately set within a range of about 50 to 150 ° C.
- the heating may be performed using an appropriate device such as a hot plate or an oven.
- the thickness of the acid generating film is not particularly limited, but is usually determined appropriately within a range of 0.1 to 30 ⁇ m.
- the acid generating film is directly formed on the polymer film, it is possible to select a material or solvent that does not elute the polymer in the polymer film into the composition for forming the acid generating film. preferable.
- the material for the support is transparent with good light transmittance such as glass. It is necessary to use materials.
- the polymer film used in the present invention can be prepared using a conventionally known polymer film forming composition containing a conductive polymer.
- the conductive polymer may exhibit conductivity by being doped with a dopant substance, or may have conductivity by itself.
- the conductive polymer is not particularly limited as long as it is a polymer having conductivity in the above sense, and may be a commercially available product or a product produced by polymerizing a predetermined monomer.
- aniline derivatives used as monomers include aniline, 2,3-diphenylaniline, 3-aminoquinoxaline and the like.
- pyrrole derivative include 3-alkylpyrrole such as 3-hexylpyrrole, 3,4-dialkylpyrrole such as 3,4-dihexylpyrrole, 3-alkoxypyrrole such as 3-methoxypyrrole, 3,4-dimethoxy Examples include 3,4-dimethoxypyrrole such as pyrrole.
- thiophene derivatives include 3,4-ethylenedioxythiophene, 3,4- (1-hexyl) ethylenedioxythiophene and the like, 3,4-ethylenedioxythiophene and its derivatives, 3-hexylthiophene and the like Examples include 3-alkoxythiophenes such as 3-alkylthiophene and 3-methoxythiophene. These monomers may be used alone or in combination of two or more.
- Examples of the method for producing a conductive polymer include a method in which various monomers are chemically oxidatively polymerized at about 0 to 100 ° C. using an oxidizing agent in a solvent. Under the present circumstances, you may make the dopant substance mentioned later exist in a reaction system previously.
- the solvent is appropriately selected in consideration of compatibility with monomers and oxidizing agents, reactivity, and the like. Specifically, water; alcohol solvents such as methanol, ethanol, propanol, acetonitrile, acetone An organic solvent such as a low polarity solvent such as dimethyl sulfoxide can be used. These solvents may be used alone or in combination of two or more.
- the oxidizing agent is appropriately determined in consideration of the reactivity with the monomer and the like, and specifically, an iron (III) salt of an inorganic acid such as iron (III) chloride hexahydrate; Copper (II) salts of inorganic acids such as copper (II) chloride; Nitrosonium tetrafluoroborate; Periodate salts such as ammonium persulfate; Iron (III) of organic acids such as iron (III) p-toluenesulfonate Salt; hydrogen peroxide, iodine and the like may be mentioned, and these may be used alone or in combination of two or more.
- the amount of the oxidizing agent used is appropriately determined within the range of 0.5 to 100 parts by mass with respect to 1 part by mass of the monomer in consideration of the type of monomer and solvent.
- the average molecular weight of the conductive polymer used in the present invention is not particularly limited, but the weight average molecular weight may be 1,000 to 2,000,000 in consideration of coating properties, thin film formability, and the like. It is preferably 2,000 to 1,000,000.
- the weight average molecular weight in this invention is a measured value (polystyrene conversion) by gel permeation chromatography.
- the polymer film forming composition used in the present invention may contain a dopant substance.
- the dopant substance include sulfonic acid compounds and salts thereof.
- the sulfonic acid compound include alkyl sulfonic acid compounds such as 2-acrylamido-2-methylpropane sulfonic acid, benzene sulfonic acid compounds such as phenol sulfonic acid, styrene sulfonic acid, toluene sulfonic acid, and dodecyl benzene sulfonic acid, and 1-naphthalene sulfone.
- the composition for forming a polymer film used in the present invention may contain a solvent as necessary.
- Solvents include water; amides such as N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP); acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone Ketones such as: alcohols such as methanol, ethanol, isopropanol and n-propanol; aliphatic hydrocarbons such as n-heptane, n-hexane and cyclohexane; aromatic hydrocarbons such as benzene, toluene, xylene and ethylbenzene
- Organic solvents such as glycol ethers such as ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, and propylene glycol monomethyl ether;
- the polymer film used in the present invention is produced by applying the above-described composition for forming a polymer film on a substrate and then heating, and evaporating it when it contains a solvent.
- the substrate for forming the polymer film is not only a glass substrate, ITO substrate, IZO substrate, etc., but also a metal or its oxide substrate, or a solvent in the composition, etc. It may be a substrate made of resin.
- the heating temperature is appropriately set within a range of about 50 to 200 ° C. in consideration of the use of the obtained thin film, the properties imparted to the obtained thin film, the boiling point of the solvent used, and the like.
- the method for applying the composition, the heating atmosphere, the heating equipment, etc. are the same as the conditions for producing the acid generating film.
- the film thickness of the polymer film is not particularly limited, but is usually appropriately determined within the range of 0.1 to 10 ⁇ m.
- composition for forming an acid generation layer of the present invention can be suitably used as a composition for doping various conventional conductive polymer films or for forming a pattern by itself.
- a predetermined polymer film and an acid generating film suitable for it can be efficiently produced, A conductive film or a conductive pattern can be produced more efficiently and simply.
- a polymer film-forming composition containing poly (3,4-ethylenedioxythiophene) as a conductive polymer, a compound that generates an alkyl or aryl sulfonic acid by an acid-catalyzed reaction as an acid proliferating agent, and light
- a conductive film or conductive pattern preparation kit comprising two compositions: a naphthaleneimide-based photoacid generator as an acid generator, preferably an acid generation layer forming composition containing naphthaleneimide-arylsulfonic acid ester.
- the mode in which the polymer film and the acid generation film are stacked and the conductive polymer in the polymer film is doped with the acid generated and propagated in the acid generation film has been described. Irradiating light to a single film made from a composition containing a photoacid generator and a photoacid generator, the conductive polymer is doped with the acid generated and propagated in the single film to conduct electricity A film can also be produced. At this time, if light irradiation is performed through a photomask, a conductive pattern in which only the light irradiation portion is doped to become a highly conductive portion can be produced.
- the technique of doping a conductive polymer using an acid generated and propagated from a photoacid generator and an acid proliferator by light irradiation which is a feature of the present invention, is a conductive polymer and a photoacid.
- the present invention can be applied to both the case where the generator and the acid proliferating agent are formed as separate films and the case where a single film including all of them is used.
- Example 1 Production of a composition for forming an acid generating layer 53 masses of 1,4-cyclohexanediol di-p-toluenesulfonate as an acid proliferating agent against Optool DSX (manufactured by Daikin Industries, Ltd.) as an easy release agent %, 25% by mass of p-toluenesulfonic acid-1,8-naphthalimide (manufactured by Midori Chemical Co., Ltd.), which is a photoacid generator, in a hexafluoro-2-propanol (hereinafter referred to as HFIP) solution (solid content concentration 4 % By weight) was prepared.
- HFIP hexafluoro-2-propanol
- Example 2 Production of conductive film 1.3% by mass PEDOT: PSS aqueous dispersion (Clevios TM PH1000, Heraeus Co., Ltd.) was spin-coated on a glass substrate and pre-baked at 100 ° C for 5 minutes to form a transparent polymer. A membrane was prepared. On the other hand, an HFIP solution in which 25% by mass of p-toluenesulfonic acid-1,8-naphthalimide and 53% by mass of 1,4-cyclohexanediol di-toluenesulfonate were mixed with Optool DSX (manufactured by Daikin Industries).
- Optool DSX manufactured by Daikin Industries
- Example 3 Production of Conductive Pattern
- the acid generating film 10 was bonded to the polymer film 20 in the same manner as in Example 2, and then the acid generating film 10 as shown in FIG. A photomask 30 having the shape shown in FIG. 4 was applied to the glass substrate (support) 11 on the side, irradiated with 10 J / cm 2 of light having a wavelength of 365 nm, and heated at 120 ° C. for 20 minutes to form a pattern.
- the acid generating film 10 was peeled off after the pattern formation and the conductive film was observed, it was observed that the pattern 40 was transferred to the conductive film as shown in FIG. 4B.
- the dry photo patterning of the transparent conductive film of PEDOT: PSS is possible by using the acid generation film
- Acid generation film 11 Glass substrate (support) 20 Polymer film 21 Glass substrate (substrate) 30 Photomask 40 Conductive pattern
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Abstract
Description
導電性高分子を透明導電膜として利用するには、目的に応じた形状にパターニングする必要がある。
これまでの導電性高分子のパターニング法には、フォトエッチング法(特許文献1参照)やスクリーン印刷法などが知られているが、いずれも工程が複雑で、得られる線幅が大きいといった欠点があった。
また、特許文献1の手法のように、パターニング時に、エッチング液によるウェットプロセスを用いた場合、導電層に悪影響を及ぼすという問題もあった。
1. 基板上に形成された導電性高分子を含む高分子膜上に、酸増殖剤および光酸発生剤を含む酸発生膜を積層して積層体を得る積層工程と、前記積層体の前記酸発生膜側から光照射する光照射工程と、前記光照射により前記酸発生膜中で発生・増殖した酸によって前記導電性高分子をドーピングするドーピング工程と、前記酸発生膜を前記高分子膜から剥離する剥離工程と、を備えることを特徴とする導電膜の製造方法、
2. 前記積層工程後光照射工程前に、前記酸発生膜上をマスキングするマスキング工程を備える1の導電膜の製造方法、
3. 前記酸発生膜が、あらかじめ支持体上に形成されている1または2の導電膜の製造方法、
4. 前記酸発生膜が、さらに易剥離剤を含む1~3のいずれかの導電膜の製造方法、
5. 導電性高分子、酸増殖剤および光酸発生剤を含む組成物を基板上に塗布し、乾燥させて高分子膜を得る高分子膜形成工程と、前記高分子膜に光照射する光照射工程と、前記光照射により前記高分子膜中で発生・増殖した酸によって前記導電性高分子をドーピングするドーピング工程と、を備えることを特徴とする導電膜の製造方法、
6. 導電性高分子と、酸増殖剤と、光酸発生剤とを含む導電膜または導電パターン形成用組成物、
7. 導電性高分子を含む高分子膜上に積層され、光照射により発生および増殖した酸が、前記高分子膜上に移行して前記導電性高分子のドーパントとして作用する酸発生層を形成するための酸発生層形成用組成物であって、酸増殖剤と、光酸発生剤とを含むことを特徴とする酸発生層形成用組成物、
8. さらに、易剥離剤を含む7の酸発生層形成用組成物、
9. 導電性高分子を含む高分子膜形成用組成物と、酸増殖剤および光酸発生剤を含む酸発生層形成用組成物と、を別々に含むことを特徴とする導電膜または導電パターン製造用キット、
10. 前記酸発生層形成用組成物が、さらに易剥離剤を含む9の導電膜または導電パターン製造用キット、
11. 前記導電性高分子が、ポリ(3,4-エチレンジオキシチオフェン)を含み、前記酸増殖剤が、酸触媒反応によってアルキルまたはアリールスルホン酸を発生する化合物であり、前記光酸発生剤が、ナフタレンイミド-アリールスルホン酸エステルである9または10の導電膜または導電パターン製造用キット、
12. 酸増殖剤および光酸発生剤に光照射して発生・増殖した酸により導電性高分子をドーピングすることを特徴とする導電性高分子のドープ方法
を提供する。
(1)導電膜および導電パターンの製造方法
本発明に係る導電膜の製造方法は、基板上に形成された導電性高分子を含む高分子膜上に、酸増殖剤および光酸発生剤を含む酸発生膜を積層して積層体を得る積層工程と、積層体の酸発生膜側から光照射する光照射工程と、光照射により酸発生膜中で発生・増殖した酸によって導電性高分子をドーピングするドーピング工程と、酸発生膜を高分子膜から剥離する剥離工程と、を備えるものである。
積層工程において、酸発生膜を高分子膜上に積層する手法としては、特に限定されるものではないが、高分子膜上に酸発生層形成用組成物を塗布・乾燥して酸発生膜を積層する方法や、基板(支持体)上に酸発生層形成用組成物を塗布・乾燥してあらかじめ作製した酸発生膜と、高分子膜とを積層する方法などが挙げられる。中でも、乾式で行えることから高分子膜の浸食等の問題が生じない後者の方法を用いることが好ましい。
この場合、照射光としては、例えば、波長190~500nmの紫外線または可視光線等の放射線が挙げられる。
放射線の光源としては、低圧水銀灯、高圧水銀灯、超高圧水銀灯、メタルハライドランプ、アルゴンガスレーザー等を用いることができる。
また、放射線照射量は、各成分の種類や含有量、高分子膜や酸発生膜の膜厚等によって異なるため一概に規定できないが、高圧水銀灯を使用する場合、0.1~15J/cm2程度である。
なお、本発明におけるドーピングは、高分子膜を構成する導電性高分子として未ドープの導電性高分子を用いた場合は、それを酸発生膜中で発生した酸(ドーパント)でドープするものであり、一方、高分子膜を構成する導電性高分子として酸(ドーパント)でドープされた導電性高分子を用いた場合は、導電性高分子のドーパントである酸と、酸発生膜中で発生した酸とのドーパント交換を伴うものである。
また、ドーピング工程における導電性高分子のドーピングを促進させるべく、上記光照射工程および/またはドーピング工程において、加熱を併用してもよいし、上記光照射工程および/またはドーピング工程の後に、加熱をしてもよい。
加熱温度は、特に限定されるものではないが、通常、80~150℃程度が好ましく、100~130℃程度がより好ましい。
加熱時間は、5~60分間程度が好ましく、10~50分間程度がより好ましい。
剥離法としては、特に限定されるものではなく、剥離液に浸漬する方法や、物理的に剥離(ピーリング剥離)する方法などが挙げられるが、この場合も、乾式で行えることから物理的に剥離する方法が好適である。
なお、この物理的な剥離性を向上させるために、酸発生膜中に易剥離剤を配合することが好ましい。
より具体的には、所望のパターンを有するフォトマスクを介して光照射をすることで、酸発生膜における光照射を受けた部分のみで酸が発生・増殖するとともに、高分子膜における上記光照射部(酸発生・増殖部)に接する部分のみがドーピングされて高導電性が付与されるため、フォトマスクのパターン形状に応じた所望の導電パターンを製造することができる。
上記酸発生膜に用いられる光酸発生剤としては、光(放射線)の照射を受けて酸を発生する化合物である限り特に限定されるものではないが、例えば、トリクロロメチル-s-トリアジン化合物、ジアリールヨードニウム塩、トリアリールスルホニウム塩、その他のスルホニウム塩、第四級アンモニウム塩、スルホン酸エステル等が挙げられる。
なお、これらの光酸発生剤は、1種単独で用いても、2種以上組み合わせて用いてもよい。
具体的には、2,6-ジニトロベンジル-p-トルエンスルホン酸エステル、2,6-ジニトロベンジル-トリフルオロメタンスルホン酸エステル、p-トルエンスルホン酸-1,8-ナフタルイミド、N-ヒドロキシナフタルイミド-トリフルオロメタンスルホン酸エステルが好ましく、p-トルエンスルホン酸-1,8-ナフタルイミドが最適である。
酸増殖剤としても、特に限定されるものではないが、有機溶媒への溶解性と酸増殖能とのバランスを考慮すると、有機スルホン酸とアルコールとから誘導される有機スルホン酸エステル誘導体が好ましい。
これらの酸増殖剤は、1種単独で用いても、2種以上組み合わせて用いてもよい。
有機スルホン酸の具体例としては、ベンゼンスルホン酸、p-トルエンスルホン酸、4-ブロモベンゼンスルホン酸、4-メトキシベンゼンスルホン酸、4-ベンジルオキシベンゼンスルホン酸、1-ナフチルスルホン酸、2-ナフチルスルホン酸、1,3-ベンゼンジスルホン酸、メタンスルホン酸、エタンスルホン酸、エタンスルホン酸、2-ニトロベンゼンスルホン酸、3-ニトロベンゼンスルホン酸、4-ニトロベンゼンスルホン酸等が挙げられる。
なお、有機スルホン酸ハロゲン化物は、有機スルホン酸をハロゲン化剤と反応させるなど、定法に従って合成しても、市販品を用いてもよい。
易剥離剤は、高分子膜からの剥離を容易にするためのものであって、シリコーン系易剥離剤やフッソ系易剥離剤が挙げられ、これらは市販品として入手できる。
その具体例としては、オプツールDSX(ダイキン工業(株)製)、Novec EGC-1720(住友スリーエム(株)製)等が挙げられる。
本発明に係る酸発生層形成用組成物は、光酸発生剤と、酸増殖剤と、必要に応じて易剥離剤とを含むものである。
当該組成物中において、光酸発生剤と酸増殖剤との使用比率は、特に限定されるものではないが、光酸発生剤:酸増殖剤=1:1~1:100程度が好ましく、1:5~1:30程度がより好ましい。
また、易剥離剤を用いる場合、その使用量としても特に限定されるものではないが、十分な剥離作用を発生させるためには、上記光酸発生剤および酸増殖剤の総質量1に対し、0.1~100質量倍程度が好ましく、0.5~50質量倍程度がより好ましく、1~10質量倍程度がより一層好ましい。
有機溶媒としては、使用する材料に応じて適当なものを選択して用いることができ、例えば、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、N-メチル-2-ピロリドン(NMP)等のアミド類;アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン類;メタノール、エタノール、イソプロパノール、n-プロパノール等のアルコール類;1,1,1,3,3,3-ヘキサフルオロ-2-プロパノール等のハロアルコール類;n-ヘプタン、n-ヘキサン、シクロヘキサン等の脂肪族炭化水素類;ベンゼン、トルエン、キシレン、エチルベンゼン等の芳香族炭化水素類;エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル等のグリコールエーテル類;エチレングリコール、プロピレングリコール等のグリコール類などが挙げられる。これらの有機溶媒は、1種単独で用いても、2種以上組み合わせて用いてもよい。
有機溶媒の使用量は、特に限定されるものではないが、塗布性等を考慮すると、光酸発生剤等の固形分濃度が、0.1~20質量%程度となる量が好ましく、0.5~10質量%となる量がより好ましい。
この場合、組成物の塗布方法は、特に限定されないが、ディップ法、スピンコート法、転写印刷法、ロールコート法、刷毛塗り、インクジェット法、スプレー法等が挙げられ、これらの塗布方法に応じて、組成物の粘度や表面張力を調節することが好ましい。
また、加熱雰囲気も特に限定されず、大気雰囲気でも、窒素等の不活性ガスや真空中でもよい。
加熱温度は、溶媒の沸点や材料の分解温度等を勘案して、50~150℃程度の範囲内で適宜設定される。
加熱の際、より高い均一成膜性を発現させる目的で、2段階以上の温度変化をつけてもよい。加熱は、例えば、ホットプレートやオーブン等適当な機器を用いて行えばよい。
酸発生膜の膜厚は、特に限定されないが、通常0.1~30μmの範囲内で適宜決定される。
一方、酸発生膜を支持体上に形成する場合、後の光照射工程にて酸の発生および増殖を効率的に促進するため、支持体の材料として、ガラス等の光透過性の良好な透明材料を用いる必要がある。
本発明で用いる高分子膜は、従来公知の導電性高分子を含む高分子膜形成用組成物を用いて作製することができる。
ここで、導電性高分子は、ドーパント物質がドープされることで導電性を発現するものであっても、それ自体導電性を有するものであってもよい。
導電性高分子としては、上述の意味の導電性を有するポリマーである限り特に限定されるものではなく、市販品でも、所定のモノマーを重合させて製造したものでもよいが、典型的には、アニリン誘導体、ピロール誘導体、チオフェン誘導体等から選ばれる単一のモノマー単位または2種以上のモノマー単位が任意の順序の組み合わせで連続したポリマーが挙げられ、その具体例としては、ポリアニリン、ポリピロール、ポリチオフェンなどが挙げられる。
中でも、導電性と入手容易性のバランスから、ポリチオフェンが好ましく、ポリ(3,4-エチレンジオキシチオフェン)がより好ましい。
ピロール誘導体の具体例としては、3-ヘキシルピロール等の3-アルキルピロール、3,4-ジヘキシルピロール等の3,4-ジアルキルピロール、3-メトキシピロール等の3-アルコキシピロール、3,4-ジメトキシピロール等の3,4-ジメトキシピロールなどが挙げられる。
チオフェン誘導体の具体例としては、3,4-エチレンジオキシチオフェン、3,4-(1-ヘキシル)エチレンジオキシチオフェン等の3,4-エチレンジオキシチオフェンおよびその誘導体、3-ヘキシルチオフェン等の3-アルキルチオフェン、3-メトキシチオフェン等の3-アルコキシチオフェンなどが挙げられる
これらのモノマーは、1種単独で用いても、2種以上組み合わせて用いてもよい。
溶媒としては、モノマーや酸化剤との相溶性、反応性等を考慮して適宜選択されるものであるが、具体的には、水;メタノール,エタノール,プロパノール等のアルコール系溶媒、アセトニトリル,アセトン,ジメチルスルホキシド等の低極性溶媒などの有機溶媒を用いることができる。
これらの溶媒は、1種単独で用いても、2種以上組み合わせて用いてもよい。
なお、酸化剤の使用量は、モノマーや溶媒の種類等を考慮して、モノマー1質量部に対して0.5~100質量部の範囲内で適宜決定される。
なお、本発明における重量平均分子量は、ゲル浸透クロマトフラフィーによる測定値(ポリスチレン換算)である。
スルホン酸化合物としては、2-アクリルアミド-2-メチルプロパンスルホン酸等のアルキルスルホン酸化合物、フェノールスルホン酸,スチレンスルホン酸,トルエンスルホン酸,ドデシルベンゼンスルホン酸等のベンゼンスルホン酸化合物、1-ナフタレンスルホン酸,2-ナフタレンスルホン酸,1,3-ナフタレンジスルホン酸,1,3,6-ナフタレントリスルホン酸,6-エチル-1-ナフタレンスルホン酸等のナフタレンスルホン酸化合物、アントラキノンスルホン酸化合物などの低分子スルホン酸化合物;ポリビニルスルホン酸、ポリスチレンスルホン酸等のポリスルホン酸化合物などが挙げられる。
溶媒としては、水;N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、N-メチル-2-ピロリドン(NMP)等のアミド類;アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン類;メタノール、エタノール、イソプロパノール、n-プロパノール等のアルコール類;n-ヘプタン、n-ヘキサン、シクロヘキサン等の脂肪族炭化水素類;ベンゼン、トルエン、キシレン、エチルベンゼン等の芳香族炭化水素類;エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル等のグリコールエーテル類;エチレングリコール、プロピレングリコール等のグリコール類などの有機溶媒が挙げられる。これらの溶媒は、1種単独で用いても、2種以上組み合わせて用いてもよい。
溶媒を含む場合、組成物中において、導電性高分子は、溶媒に溶解していても、分散していてもよい。
高分子膜を形成する基板は、ガラス基板や、ITO基板、IZO基板などだけでなく、金属やその酸化物からなる基板、あるいは、組成物中の溶媒等に溶出し、悪影響を及ぼさない限り、樹脂からなる基板であってもよい。
加熱温度は、得られる薄膜の用途、得られる薄膜に付与する性質、用いる溶媒の沸点等を勘案して、50~200℃程度の範囲内で適宜設定される。
なお、組成物の塗布方法、加熱雰囲気、加熱機器等は上記酸発生膜作製時の条件と同様である。
高分子膜の膜厚は、特に限定されないが、通常0.1~10μmの範囲内で適宜決定される。
特に、導電性高分子として、ポリ(3,4-エチレンジオキシチオフェン)を含む高分子膜形成用組成物と、酸増殖剤として酸触媒反応によってアルキルまたはアリールスルホン酸を発生する化合物と、光酸発生剤としてナフタレンイミド系光酸発生剤、好ましくは、ナフタレンイミド-アリールスルホン酸エステルとを含む酸発生層形成用組成物との2つの組成物からなる導電膜または導電パターン作製用キットとすることで、本発明の主たる目的である乾式光パターニングを効率的かつ簡便に作製できる。
また、この際、フォトマスクを介して光照射をすれば、光照射部分のみがドーピングされて高導電性部分となった導電パターンを作製することもできる。
すなわち、本発明の特徴である、光照射によって光酸発生剤と酸増殖剤とから発生・増殖させた酸を用いて導電性高分子をドーピングするという技術は、導電性高分子と、光酸発生剤および酸増殖剤とを別々の膜とした場合、およびそれらをすべて含む単一膜とした場合のどちらにも応用できる。
[1]FT-IRスペクトル測定
日本分光株式会社製 FT/IR-6100を用いて測定した。
[2]導電率測定
スピンコーターを用いて作製した薄膜(膜厚0.1~10μm、スピンコート条件300~5000rpm)の導電率を、抵抗率計(ロレスタGP MCP-T610型,(株)三菱化学アナリティック製)を用いて測定した。
易剥離剤であるオプツールDSX(ダイキン工業(株)製)に対し、酸増殖剤である1,4-シクロヘキサンジオールジp-トルエンスルホネート53質量%、光酸発生剤であるp-トルエンスルホン酸-1,8-ナフタルイミド(みどり化学(株)製)25質量%混合したヘキサフルオロ-2-プロパノール(以下、HFIP)溶液(固形分濃度4質量%)を調製した。
先に調製した溶液をシリコンウェハー上にスピンコートし、100℃で3分間プリベイクして製膜した。これに365nm光を0または10J/cm2照射し、120℃で0~70分間加熱した際のFT-IRスペクトルの変化を追跡した。結果を図1に示す。
FT-IRスペクトル測定において、加熱に伴う酸増殖剤のS-O結合由来ピークの強度変化を追跡したところ、図1に示されるように、光照射により酸を発生させた場合では速やかに減少したのに対し、光照射を行わなかった場合では70分間加熱しても減少は見られなかった。
このことから、酸増殖剤は離型剤中で光酸発生剤から発生した酸によって効果的に分解されることがわかった。
1.3質量%PEDOT:PSS水分散液(CleviosTM PH1000、ヘレウス(株))をガラス基板上にスピンコートし、100℃で5分間プリベイクして透明高分子膜を作製した。
一方、オプツールDSX(ダイキン工業(株)製)に対し、p-トルエンスルホン酸-1,8-ナフタルイミド25質量%、1,4-シクロヘキサンジオールジp-トルエンスルホネート53質量%混合したHFIP溶液を、別のガラス基板にスピンコートし、100℃で3分間プリベイクして酸発生膜を作製した。
透明高分子膜に酸発生膜を貼り合せ、365nm光を0または10J/cm2照射し、120℃で0~60分間加熱した際の導電率を四探針法により測定した。
図2に示されるように、透明高分子膜の上に酸発生膜を貼り合せ、光照射と加熱して得られた透明導電膜では、加熱時間に応じて導電率は上昇し、20分間加熱したときの導電率は未露光の場合に比べて1000倍に上昇した。この理由は、光酸発生剤から発生した酸をトリガーとして酸増殖剤が連鎖的に分解され、系中に増加したTsOHとPEDOT:PSSのPSSとの間でドーパント交換が起きたためと考えられる。
図3に示されるように、実施例2と同様にして高分子膜20に酸発生膜10を貼り合わせた後、図3に示されるように酸発生膜10側のガラス基板(支持体)11上に図4に示される形状のフォトマスク30を当て、波長365nmの光を10J/cm2照射し、120℃で20分間加熱してパターン形成を行った。
パターン形成後に酸発生膜10を剥離して導電膜を観察したところ、図4(b)に示されるように、導電膜にパターン40が転写されたことが観察された。
以上より、光酸発生反応と酸増殖反応を組み込んだ酸発生膜を用いることで、PEDOT:PSSの透明導電膜の乾式光パターニングが可能であることがわかった。
11 ガラス基板(支持体)
20 高分子膜
21 ガラス基板(基板)
30 フォトマスク
40 導電パターン
Claims (12)
- 基板上に形成された導電性高分子を含む高分子膜上に、酸増殖剤および光酸発生剤を含む酸発生膜を積層して積層体を得る積層工程と、
前記積層体の前記酸発生膜側から光照射する光照射工程と、
前記光照射により前記酸発生膜中で発生・増殖した酸によって前記導電性高分子をドーピングするドーピング工程と、
前記酸発生膜を前記高分子膜から剥離する剥離工程と、
を備えることを特徴とする導電膜の製造方法。 - 前記積層工程後光照射工程前に、前記酸発生膜上をマスキングするマスキング工程を備える請求項1記載の導電膜の製造方法。
- 前記酸発生膜が、あらかじめ支持体上に形成されている請求項1または2記載の導電膜の製造方法。
- 前記酸発生膜が、さらに易剥離剤を含む請求項1~3のいずれか1項記載の導電膜の製造方法。
- 導電性高分子、酸増殖剤および光酸発生剤を含む組成物を基板上に塗布し、乾燥させて高分子膜を得る高分子膜形成工程と、
前記高分子膜に光照射する光照射工程と、
前記光照射により前記高分子膜中で発生・増殖した酸によって前記導電性高分子をドーピングするドーピング工程と、
を備えることを特徴とする導電膜の製造方法。 - 導電性高分子と、酸増殖剤と、光酸発生剤とを含む導電膜または導電パターン形成用組成物。
- 導電性高分子を含む高分子膜上に積層され、光照射により発生および増殖した酸が、前記高分子膜上に移行して前記導電性高分子のドーパントとして作用する酸発生層を形成するための酸発生層形成用組成物であって、
酸増殖剤と、光酸発生剤とを含むことを特徴とする酸発生層形成用組成物。 - さらに、易剥離剤を含む請求項7記載の酸発生層形成用組成物。
- 導電性高分子を含む高分子膜形成用組成物と、
酸増殖剤および光酸発生剤を含む酸発生層形成用組成物と、を別々に含むことを特徴とする導電膜または導電パターン製造用キット。 - 前記酸発生層形成用組成物が、さらに易剥離剤を含む請求項9記載の導電膜または導電パターン製造用キット。
- 前記導電性高分子が、ポリ(3,4-エチレンジオキシチオフェン)を含み、
前記酸増殖剤が、酸触媒反応によってアルキルまたはアリールスルホン酸を発生する化合物であり、
前記光酸発生剤が、ナフタレンイミド-アリールスルホン酸エステルである請求項9または10記載の導電膜または導電パターン製造用キット。 - 酸増殖剤および光酸発生剤に光照射して発生・増殖した酸により導電性高分子をドーピングすることを特徴とする導電性高分子のドープ方法。
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